首页 |元器件品牌

SD1143-01 [ADPOW]

RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS; 射频与微波晶体管VHF移动应用程序
SD1143-01
型号： SD1143-01
厂家： ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述：

RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
射频与微波晶体管VHF移动应用程序

晶体 晶体管 射频 微波 放大器 局域网
文件： 总3页 (文件大小：106K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
140 COMMERCE DRIVE  
MONTGOMERYVILLE, PA  
18936-1013  
PHONE: (215) 631-9840  
FAX: (215) 631-9855  
SD1143-01  
RF & MICROWAVE TRANSISTORS  
VHF MOBILE APPLICATIONS  
Features  
·
·
·
·
·
175 MHz  
12.5 VOLTS  
POUT = 10 W  
GP = 10 dB MINIMUM  
COMMON EMITTER CONFIGURATION  
DESCRIPTION:  
The SD1143-01 is a 12.5 V epitaxial silicon, NPN transistor  
designed primarily for Class C, VHF communications  
equipment. Emitter ballast resistors provide high VSWR  
operating capability.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
VCBO  
Parameter  
Value  
Unit  
V
V
Collector-Base Voltage  
36  
18  
VCER  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Device Current  
VEBO  
IC  
4.0  
V
A
2.0  
PDISS  
TJ  
Power Dissipation  
20  
W
°C  
°C  
Junction Temperature  
Storage Temperature  
+200  
-65 to +150  
TSTG  
THERMAL DATA  
RTH(J-C)  
Junction-case Thermal Resistance*  
°C/W  
8.75  
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.  
SD1143-01  
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)  
STATIC  
Value  
Typ.  
---  
Symbol  
Test Conditions  
Unit  
Min.  
Max.  
BVCES  
BVCEO  
BVEBO  
ICES  
IC = 50mA  
IE = 15mA  
IE = 2.5mA  
VCE = 15 V  
VCE = 5 V  
VBE = 0V  
IB = 0mA  
IC = 0mA  
IE = 0mA  
IC = 250mA  
36  
---  
V
V
18  
4.0  
------  
5
---  
---  
---  
---  
---  
---  
V
2
mA  
---  
hFE  
200  
DYNAMIC  
Value  
Typ.  
---  
Symbol  
Test Conditions  
Unit  
Min.  
Max.  
POUT  
GP  
f = 175 MHz  
f = 175 MHz  
f = 1 MHz  
PIN = 1 W  
PIN = 1 W  
VCB = 15V  
VCC = 12.5V  
VCC = 12.5V  
10  
---  
W
dB  
pf  
10  
---  
---  
---  
---  
COB  
45  
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.  
SD1143-01  
PACKAGE MECHANICAL DATA  
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.  

相关型号：

SD1144

 RF & MICROWAVE TRANSISTORS
MICROSEMI

SD1146

 RF & MICROWAVE TRANSISTORS
MICROSEMI

SD1146

 RF AND MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS
ADPOW

SD1146-03

 RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN,
MICROSEMI

SD1159

 Mini size of Discrete semiconductor elements
ETC

SD1166

 RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN,
MICROSEMI

SD1166E3

 RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN,
MICROSEMI

SD1169

 NPN SILICON RF POWER TRANSISTOR
ASI

SD1170

 RF Small Signal Bipolar Transistor, 0.001A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MT66, 4 PIN
MICROSEMI

SD1171

 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, MT66, 4 PIN
MICROSEMI

SD1176

 RF Small Signal Bipolar Transistor, 0.425A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, M148, 4 PIN
MICROSEMI

SD118-23-21-021

 Red Enhanced Quad Cell Silicon Photodiode
ADVANCEDPHOTO
©2020 ICPDF网 联系我们和版权申明