APT1004RCN [ADPOW]

N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS; N - 沟道增强型高压功率MOSFET
APT1004RCN
元器件型号: APT1004RCN
生产厂家: ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述和应用:

N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N - 沟道增强型高压功率MOSFET

晶体 晶体管 功率场效应晶体管 脉冲 高压 局域网 高电压电源
PDF文件: 总4页 (文件大小:54K)
下载文档:  下载PDF数据表文档文件
型号参数:APT1004RCN参数

APT1004RDN

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP

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12 ETC

APT1004RDN

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 ADPOW

APT1004RGN

N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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37 ADPOW

APT1004RKN

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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55 ADPOW

APT10050B2FLC

Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3

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1 ADPOW

APT10050B2LC

Power MOS VITM is a new generation of low gate charge, high voltage

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110 ADPOW

APT10050B2LC

21A, 1000V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TMAX-3

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0 MICROSEMI

APT10050B2VFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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30 ADPOW

APT10050B2VFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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26 ADPOW

APT10050B2VFR_04

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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16 ADPOW

APT10050B2VR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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47 ADPOW

APT10050B2VRG

Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CLIP MOUNTED TO-247, TMAX-3

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0 MICROSEMI

APT10050CFN

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 24.5A I(D)

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22 ETC

APT10050FN

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 22.5A I(D) | SIP-TAB

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19 ETC

APT10050JLC

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

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33 ADPOW