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APT10050FN [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 22.5A I(D) | SIP-TAB ; 晶体管| MOSFET | N沟道| 1KV V（ BR ） DSS | 22.5AI （D ） | SIP -TAB\n
APT10050FN
元器件型号： APT10050FN
生产厂家： ETC    ETC
描述和应用：

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 22.5A I(D) | SIP-TAB
晶体管| MOSFET | N沟道| 1KV V（ BR ） DSS | 22.5AI （D ） | SIP -TAB\n

晶体 晶体管 脉冲
PDF文件： 总5页 (文件大小：444K)
下载文档：  下载PDF数据表文档文件
型号参数：APT10050FN参数
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APT10050JLC

 Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

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33 ADPOW

APT10050JLC

 Power Field-Effect Transistor, 19A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4

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0 ADPOW

APT10050JN

 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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165 ADPOW

APT10050JVFR

 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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75 ADPOW

APT10050JVFR

 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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37 ADPOW

APT10050JVFR

 Power Field-Effect Transistor, 19A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4

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1 ADPOW

APT10050JVFR_04

 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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22 ADPOW

APT10050JVR

 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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63 ADPOW

APT10050LLC

 Power MOS VITM is a new generation of low gate charge, high voltage

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46 ADPOW

APT10050LLC

 21A, 1000V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA, TO-264, 3 PIN

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0 MICROSEMI

APT10050LVFR

 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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42 ADPOW

APT10050LVFR

 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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18 ADPOW

APT10050LVFRG

 Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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-
0 MICROSEMI

APT10050LVR

 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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210 ADPOW

APT10050LVRG

 Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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1 MICROSEMI
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