ACT-SF41632N-39P5C [AEROFLEX]
ACT-SF41632 High Speed 128Kx32 SRAM / 512Kx32 Flash Multichip Module; ACT- SF41632高速128Kx32 SRAM /闪存512Kx32多芯片模块
| 型号： | ACT-SF41632N-39P5C |
| 厂家： | 
AEROFLEX CIRCUIT TECHNOLOGY |
| 描述： | ACT-SF41632 High Speed 128Kx32 SRAM / 512Kx32 Flash Multichip Module |
| 文件： | 总11页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ACT-SF41632 High Speed
128Kx32 SRAM / 512Kx32 Flash
Multichip Module
CIRCUIT TECHNOLOGY
www.aeroflex.com
FEATURES
■ 4 – 128K x 8 SRAMs & 4 – 512K x 8 Flash Die in
FLASH MEMORY FEATURES
One MCM
■ Sector Architecture (Each Die)
● 8 Equal Sectors of 64K bytes each
● Any combination of sectors can be erased with
one command sequence.
■ Access Times of 25ns, 35ns (SRAM) and
60ns, 70ns, 90ns (Flash)
■ Organized as 128K x 32 of SRAM and 512K x 32
■ +5V Programing, +5V Supply
of Flash Memory with Common Data Bus
■ Embedded Erase and Program Algorithms
■ Hardware and Software Write Protection
■ Page Program Operation and Internal Program
Control Time.
■ 10,000 Erase/Program Cycles
■ Low Power CMOS
■ Input and Output TTL Compatible Design
■ MIL-PRF-38534 Compliant MCMs Available
■ Decoupling Capacitors and Multiple Grounds for
Low Noise
■ Commercial, Industrial and Military Temperature
Ranges
■ Industry Standard Pinouts
■ TTL Compatible Inputs and Outputs
■ Packaging – Hermetic Ceramic
ISO
● 66–Lead, PGA-Type, 1.385"SQ x 0.245"max,
Aeroflex code# "P1,P5 with/without shoulders)"
● 68–Lead, Dual-Cavity CQFP(F2), 0.88"SQ x
.20"max (.18 max thickness available, contact
factory for details) (Drops into the 68 Lead
JEDEC .99"SQ CQFJ footprint)
1
900
I
Block Diagram – PGA Type Package(P1 & P5) & CQFP(F2)
FWE4 SWE4
PIN DESCRIPTION
FWE1 SWE1
FWE3 SWE3
FWE2 SWE2
I/O0-31
A0–18
Data I/O
OE
A0–A18
SCE
Address Inputs
FWE1-4 Flash Write Enables
SWE1-4 SRAM Write Enables
FCE
FCE
SCE
OE
Flash Chip Enable
SRAM Chip Enable
Output Enable
Not Connected
Power Supply
Ground
512K X 8 FLASH
512K X 8 FLASH
512K X 8 FLASH
512K X 8 FLASH
128K X 8 SRAM
128K X 8 SRAM
128K X 8 SRAM
128K X 8 SRAM
NC
VCC
GND
I/O0-7
I/O8-15
I/O16-23
I/O24-31
eroflex Circuit Technology - Advanced Multichip Modules © SCD3851 REV A 5/21/98
Absolute Maximum Ratings
Symbol
TC
Rating
Range
-55 to +125
-65 to +150
-0.5 to +7
300
Units
°C
Case Operating Temperature
TSTG
VG
°C
Storage Temperature
V
Maximum Signal Voltage to Ground
Maximum Lead Temperature (10 seconds)
TL
°C
Parameter
Flash Data Retention
10 Years
10,000
Flash Endurance (Write/Erase Cycles)
Normal Operating Conditions
Symbol
VCC
Parameter
Minimum
Maximum
Units
+4.5
+2.2
-0.5
+5.5
V
V
V
Power Supply Voltage
Input High Voltage
Input Low Voltage
VIH
V
CC + 0.3
+0.8
VIL
Capacitance
(VIN = 0V, f = 1MHz, TA = 25°C)
Symbol Parameter
Maximum
Units
pF
CAD
COE
80
80
30
50
30
A0 – A18 Capacitance
pF
OE Capacitance
CWE1-4
CCE
pF
F/S Write Enable Capacitance
F/S Chip Enable Capacitance
I/O0 – I/O31 Capacitance
pF
CI/O
pF
This parameter is guaranteed by design but not tested
DC Characteristics
(VCC = 5.0V, VSS = 0V, Tc = -55°C to +125°C)
Parameter
Sym
Conditions
Min
Max Units
ILI
10
µA
Input Leakage Current
VCC = Max, VIN = 0 to VCC
FCE = SCE = VIH, OE = VIH,
VOUT = 0 to VCC
ILO
ICCx32
ISB
10
µA
Output Leakage Current
SRAM Operating Supply Current x 32
Mode
SCE = VIL, OE = VIH, f = 5MHz, VCC
Max, FCE = VIH
=
500 mA
FCE = SCE = VIH, OE = VIH, f = 5MHz,
VCC = Max
80
mA
Standby Current
VOL
VOH
ICC1
0.4
V
V
SRAM Output Low Voltage
IOL = 8 mA, VCC = Min, FCE = VIH
IOH = -4.0 mA, , VCC = Min, FCE = VIH
FCE = VIL, OE = VIH, SCE = VIH
2.4
SRAM Output High Voltage
260 mA
Flash Vcc Active Current for Read (1)
Flash Vcc Active Current for Program
or Erase (2)
ICC2
300 mA
FCE = VIL, OE = VIH, SCE = VIH
VOL
VOH1
VLKO
0.45
4.2
V
V
V
Flash Output Low Voltage
Flash Output High Voltage
Flash Low Vcc Lock Out Voltage
IOL = 12 mA, VCC = Min, SCE = VIH
IOH = -2.5 mA, , VCC = Min, SCE = VIH
0.85 x VCC
3.2
Notes: 1) The ICC current listed includes both the DC operating current and the frequency dependent component (at 5MHz). The
frequency component typically is less than 2mA/MHz, with OE at VIH 2) ICC active while Embedded Algorithim (program or
erase) is in progress 3) DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
2
Aeroflex Circuit Technology
SCD3851 REV A 5/21/98 Plainview NY (516) 694-6700
SRAM AC Characteristics
(VCC = 5.0V, VSS= 0V, TC = -55°C to +125°C)
Read Cycle
Parameter
–025
–035
Min Max
35
Symbol
Units
Min Max
25
tRC
tAA
tACE
tOH
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read Cycle Time
25
25
35
Address Access Time
35
Chip Select Access Time
0
0
Output Hold from Address Change
Output Enable to Output Valid
Chip Select to Output in Low Z *
Output Enable to Output in Low Z *
Chip Deselect to Output in High Z *
Output Disable to Output in High Z *
* Parameters guaranteed by design but not tested
tOE
15
20
tCLZ
tOLZ
tCHZ
tOHZ
3
0
3
0
12
12
20
20
Write Cycle
Parameter
–025
–035
Min Max
35
Symbol
Units
Min Max
tWC
tCW
tAW
tDW
tWP
tAS
25
20
20
15
20
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write Cycle Time
25
25
20
25
0
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
tOW
tWHZ
tDH
0
0
Output Active from End of Write *
Write to Output in High Z *
Data Hold from Write Time
Address Hold Time
10
20
0
0
tAH
0
0
* Parameters guaranteed by design but not tested
SRAM Truth Table
Mode
Standby
Read
SCE
OE
SWE
Data I/O
Power
H
L
L
L
X
X
H
H
L
High Z
Data Out
High Z
Standby
Active
Active
Active
L
Output Disable
Write
H
X
Data In
3
Aeroflex Circuit Technology
SCD3851 REV A 5/21/98 Plainview NY (516) 694-6700
Timing Diagrams — SRAM
Read Cycle Timing Diagrams
Write Cycle Timing Diagrams
Write Cycle (SWE Controlled, OE = VIH)
Read Cycle 1 (SCE = OE = VIL, SWE = VIH)
tWC
tRC
A0-18
A0-18
tAA
tAW
tCW
tAH
tOH
DI/O
SCE
Previous Data Valid
Data Valid
tAS
tWP
SWE
tOW
tDH
tWHZ
tDW
SEE NOTE
DI/O
Data Valid
Read Cycle 2 (SWE = VIH)
tRC
Write Cycle (SCE Controlled, OE = VIH )
A0-18
tWC
tAA
A0-18
tAH
tAW
SCE
tAS
tACE
tCW
tWP
tCHZ
SEE NOTE
SCE
tCLZ
SEE NOTE
OE
tOHZ
tOE
SWE
SEE NOTE
tOLZ
SEE NOTE
tDW
tDH
DI/O
Data Valid
High Z
DI/O
Data Valid
Note: Guaranteed by design, but not tested.
DON’T CARE
UNDEFINED
AC Test Circuit
Current Source
IOL
AC Test Conditions
Parameter
Typical
0 – 3.0
5
Units
Input Pulse Level
Input Rise and Fall
V
ns
V
VZ ~ 1.5 V (Bipolar Supply)
To Device Under Test
CL = 50 pF
Input and Output Timing Reference Level
1.5
IOH
Current Source
Notes:
1) VZ is programmable from -2V to +7V. 2) IOL and IOH programmable from 0 to 16 mA. 3) Tester Impedance
ZO = 75Ω. 4) VZ is typically the midpoint of VOH and VOL. 5) IOL and IOH are adjusted to simulate a typical resistance
load circuit. 6) ATE Tester includes jig capacitance.
4
Aeroflex Circuit Technology
SCD3851 REV A 5/21/98 Plainview NY (516) 694-6700
Flash AC Characteristics – Read Only Operations
(Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C)
Symbol
–60
–70
–90
Parameter
Units
JEDEC Stand’d Min Max Min Max Min Max
tAVAV
tAVQV
tELQV
tGLQV
tEHQZ
tGHQZ
tAXQX
tRC
tACC
tCE
tOE
tDF
60
70
90
ns
ns
ns
ns
ns
ns
ns
Read Cycle Time
60
60
30
20
20
70
70
35
20
20
90
90
35
20
20
Address Access Time
Chip Enable Access Time
Output Enable to Output Valid
Chip Enable to Output High Z (1)
Output Enable High to Output High Z(1)
Output Hold from Address, CE or OE Change, Whichever is First
Note 1. Guaranteed by design, but not tested
tDF
tOH
0
0
0
Flash AC Characteristics – Write / Erase / Program Operations, FWE Controlled
(Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C)
Symbol
–60
–70
–90
Parameter
Units
JEDEC Stand’d Min Max Min Max Min Max
tAVAC
tELWL
tWC
tCE
60
0
70
0
90
0
ns
ns
Write Cycle Time
Chip Enable Setup Time
Write Enable Pulse Width
Address Setup Time
tWLWH
tAVWL
tDVWH
tWHDX
tWLAX
tWHWL
tWHWH1
tWHWH2
tWP
tAS
40
0
45
0
45
0
ns
ns
tDS
40
0
45
0
45
0
ns
Data Setup Time
tDH
tAH
tWPH
ns
Data Hold Time
45
20
45
20
45
20
ns
Address Hold Time
ns
Write Enable Pulse Width High
Duration of Byte Programming Operation
Sector Erase Time
14 TYP 14 TYP 14 TYP
µs
30
30
30
Sec
µs
tGHWL
0
0
0
Read Recovery Time before Write
Vcc Setup Time
tVCE
50
50
50
µs
50
10
50
10
50
10
Sec
ns
Chip Programming Time
Chip Enable Hold Time
Chip Erase Time
1
tOEH
tWHWH3
120
120
120
Sec
1. Toggle and Data Polling only.
Flash AC Characteristics – Write / Erase / Program Operations, FCE Controlled
(Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C)
Symbol
–60
–70
–90
Parameter
Units
JEDEC Stand’d Min Max Min Max Min Max
tAVAC
tWLEL
tELEH
tWC
tWS
tCP
60
0
70
0
90
0
ns
ns
Write Cycle Time
Write Enable Setup Time
Chip Enable Pulse Width
Address Setup Time
Data Setup Time
40
0
45
0
45
0
ns
tAVEL
tAS
ns
tDVEH
tEHDX
tELAX
tDS
40
0
45
0
45
0
ns
tDH
tAH
tCPH
ns
Data Hold Time
45
20
45
20
45
20
ns
Address Hold Time
tEHEL
ns
Chip Enable Pulse Width High
Duration of Byte Programming
Sector Erase Time
tWHWH1
tWHWH2
14 TYP 14 TYP 14 TYP
µs
30
30
30
Sec
ns
tGHEL
0
0
0
Read Recovery Time
Chip Programming Time
Chip Erase Time
50
50
50
Sec
Sec
tWHWH3
120
120
120
5
Aeroflex Circuit Technology
SCD3851 REV A 5/21/98 Plainview NY (516) 694-6700
AC Waveforms for Flash Memory Read Operations
tRC
Addresses
FCE
Addresses Stable
tACC
tDF
OE
tOE
FWE
tCE
tOH
High Z
High Z
Outputs
Output Valid
Write/Erase/Program
Operation for Flash Memory, FWE Controlled
Data Polling
Addresses
5555H
PA
PA
tRC
tWC
tAH
tAS
FCE
OE
tGHWL
tWP
tWHWH1
tWPH
FWE
tCE
tDF
tOH
tOE
tDH
AOH
PD
D7
DOUT
Data
5.0V
tDS
tCE
Notes:
1. PA is the address of the memory location to be programmed.
2. PD is the data to be programmed at byte address.
3. D7 is the 0utput of the complement of the data written to the deviced.
4. Dout is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
6
Aeroflex Circuit Technology
SCD3851 REV A 5/21/98 Plainview NY (516) 694-6700
AC Waveforms Chip/Sector
Erase Operations for Flash Memory
Data Polling
5555H
tAH
5555H
2AAAH
5555H
2AAAH
SA
Addresses
tAS
FCE
OE
tGHWL
tWP
FWE
tWPH
tDH
tCE
AAH
55H
80H
AAH
55H
10H/30H
Data
VCC
tDS
tVCE
Notes:
1. SA is the sector address for sector erase.
AC Waveforms for Data Polling
During Embedded Algorithm Operations for Flash Memory
tCH
FCE
tDF
tOE
OE
tOEH
tCE
FWE
tOH
*
High Z
DQ7=
Valid Data
DQ7
DQ7
tWHWH1 or 2
DQ0–DQ6
Valid Data
DQ0-DQ6
DQ0–DQ6=Invalid
tOE
* DQ7=Valid Data (The device has completed the Embedded operation).
7
Aeroflex Circuit Technology
SCD3851 REV A 5/21/98 Plainview NY (516) 694-6700
Write/Erase/Program Operation for Flash Memory, FCE Controlled
Data Polling
5555H
PA
PA
Addresses
tWC
tAS
tAH
FCE
OE
tGHWL
tCP
tWHWH1
FWE
tCPH
tWS
tDH
AOH
PD
D7
DOUT
Data
5.0V
tDS
Notes:
1. PA is the address of the memory location to be programmed.
2. PD is the data to be programmed at byte address.
3. D7 is the 0utput of the complement of the data written to the device.
4. DOUT is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
8
Aeroflex Circuit Technology
SCD3851 REV A 5/21/98 Plainview NY (516) 694-6700
Pin Numbers & Functions
66 Pins — PGA-Type
Pin #
1
Function
I/O8
I/O9
I/O10
A14
Pin #
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
Function
A15
Pin #
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
Function
I/O25
I/O26
A7
Pin #
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
Function
FWE3
SWE3
GND
I/O19
I/O31
I/O30
I/O29
I/O28
A1
2
Vcc
3
FCE
SCE
I/O3
4
A12
5
A16
SWE1
A13
6
A11
I/O15
I/O14
I/O13
I/O12
OE
7
A0
A8
8
A18
I/O16
I/O17
I/O18
VCC
9
I/O0
I/O1
I/O2
FWE2
SWE2
GND
I/O11
A10
10
11
12
13
14
15
16
17
A2
A17
A3
FWE1
I/O7
SWE4
FWE4
I/O27
A4
I/O23
I/O22
I/O21
I/O20
I/O6
I/O5
I/O4
A5
A9
I/O24
A6
"P1" — 1.385" SQ PGA Type Package Standard (with shoulders on Pins 1, 11, 56 & 66)
"P5" — 1.385" SQ PGA Type Special Order Package (without shoulders)
Bottom View (P1 & P5)
Side View
(P5)
Side View
(P1)
1.400 SQ
MAX
1.000
TYP
.600
TYP
.245
MAX
Pin 1
.220
MAX
.025
.035
Pin 56
1.000
TYP
.100
TYP
.100 TYP
.020
.016
.020
.016
Pin 66
Pin 11
.145
MIN
.165
MIN
.100 TYP
All dimensions in inches
9
Aeroflex Circuit Technology
SCD3851 REV A 5/21/98 Plainview NY (516) 694-6700
Pin Numbers & Functions
68 Pins — Dual-Cavity CQFP
Pin #
1
Function
GND
SWE3
A5
Pin #
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
Function
GND
I/O8
Pin #
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
Function
OE
Pin #
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
Function
GND
FI/O23
FI/O22
FI/O21
FI/O20
FI/O19
FI/O18
FI/O17
FI/O16
VCC
2
SWE2
A17
3
I/O9
4
A4
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
Vcc
FWE2
FWE3
FWE4
A18
5
A3
6
A2
7
A1
8
A0
SCE
9
NC
SWE1
FI/O31
FI/O30
FI/O29
FI/O28
FI/O27
FI/O26
FI/O25
FI/O24
10
11
12
13
14
15
16
17
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
A11
A10
A12
A9
A13
A8
A14
A7
A15
A6
A16
FWE1
SWE4
FCE
Package Outline — Dual-Cavity CQFP "F2"
Top View
.990 SQ
±.010
.890 SQ
MAX
Pin 9
Pin 61
*.200 MAX
.010 REF
Pin 10
Pin 60
.015
±.002
.010 ±.002
.010 R
REF
+3°/-3°
.010 ±.005
.040
±.005
.050
TYP
Detail “A”
Pin 26
Pin 27
Pin 44
Pin 43
See Detail “A”
.800 REF
*.180 MAX available, call factory for details
All dimensions in inches
10
Aeroflex Circuit Technology
SCD3851 REV A 5/21/98 Plainview NY (516) 694-6700
C I R C U I T T E C H N O L O G Y
Ordering Information
Model Number
DESC Part Number
Speed
Package
1.385"sq PGA-Type
1.385"sq PGA-Type
1.385"sq PGA-Type
.88"sq CQFP
TBD
TBD
TBD
TBD
TBD
TBD
25(S) / 60(F) ns
35(S) / 70(F) ns
35(S) / 90(F) ns
25(S) / 60(F) ns
35(S) / 70(F) ns
35(S) / 90(F) ns
ACT-SF41632N–26P1X
ACT-SF41632N–37P1X
ACT-SF41632N–39P1X
ACT-SF41632N–26F2X
ACT-SF41632N–37F2X
ACT-SF41632N–39F2X
.88"sq CQFP
.88"sq CQFP
Note: (S) = Speed for SRAM, (F) = Speed for FLASH
Part Number Breakdown
ACT– SF 416 32 N– 26 P1 M
Aeroflex Circuit
Technology
Memory Type
Screening
SF = SRAM Flash Combo Module
C = Commercial Temp, 0°C to +70°C
I = Industrial Temp, -40°C to +85°C
T = Military Temp, -55°C to +125°C
M = Military Temp, -55°C to +125°C Screened *
Q = MIL-PRF-38534 Compliant/SMD
Memory Depth, Locations
4 = 4M SRAM, 16 = 16M Flash
Memory Width, Bits
Package Types & Sizes
Surface Mount Packages
Pinout Options
N = None
F2 = 0.88"SQ 68 Leads Dual-Cavity CQFP
Thru-Hole Packages
P1 = 1.385"SQ PGA 66 Pins W/Shoulder
P5 = 1.385"SQ PGA 66 Pins WO/Shoulder
Memory Speed (Code)
26 = 25ns SRAM & 60ns FLASH
37 = 35ns SRAM & 70ns FLASH
39 = 35ns SRAM & 90ns FLASH
*
Screened to the individual test methods of MIL-STD-883
Specifications subject to change without notice.
Telephone: (516) 694-6700
FAX: (516) 694-6715
Toll Free Inquiries: 1-(800) 843-1553
Aeroflex Circuit Technology
35 South Service Road
Plainview New York 11830
11
Aeroflex Circuit Technology
SCD3851 REV A 5/21/98 Plainview NY (516) 694-6700
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