HMMC-3122-BLK [AGILENT]

Prescaler, 3122 Series, 1-Func, GAAS, PDSO8, 4.90 X 3.90 MM, 1.55 MM HEIGHT, 1.25 MM PITCH, PLASTIC, MS-012, SOIC-8;


型号：	HMMC-3122-BLK
厂家：	AGILENT TECHNOLOGIES, LTD.
描述：	Prescaler, 3122 Series, 1-Func, GAAS, PDSO8, 4.90 X 3.90 MM, 1.55 MM HEIGHT, 1.25 MM PITCH, PLASTIC, MS-012, SOIC-8 时钟光电二极管逻辑集成电路
文件：	总8页 (文件大小：472K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Agilent HMMC-3122

DC-12 GHz Packaged High Efficiency

Divide-by-2 Prescaler

HMMC-3122-TR1 - 7” diameter reel/500 each

HMMC-3122-BLK - Bubble strip/10 each

Data Sheet

Description

Features

The HMMC-3122 is a packaged

GaAs HBT MMIC prescaler

which offers DC to 12 GHz

frequency translation for use in

communications and EW

systemsincorporatinghigh–

frequencyPLL oscillator circuits

and signal–path down

conversion applications. The

prescalerprovides a large input

power sensitivity window and

low phase noise.

•

Wide Frequency Range:

0.2–12 GHz

•

High Input Power Sensitivity:

On–chip pre– and post–amps

-15 to +10 dBm (1–8 GHz)

-10 to +8 dBm (8–10 GHz)

-5 to +2 dBm (10–12 GHz)

Package Type: SOIC-8 Plastic

Package Dimensions: 4.9 x 3.9 mm typ

Package Thickness: 1.55 mm typ

Lead Pitch: 1.25 mm nom

•

: 0 dBm (0.5 V

)

p-p

out

Low Phase Noise:

Lead Width: 0.42 mm nom

-153 dBc/Hz @ 100 kHz Offset

(+) or (-) Single Supply Bias

Operation

Wide Bias Supply Range:

4.5 to 6.5 volt operating range

Differential I/0 with on–chip

50W matching

•

Absolute Maximum Ratings

(@ T = +25 °C, unless otherwise stated)

Symbol

V_CC

Parameters/Conditions

Bias Supply Voltage

Bias Supply Delta

Min

-7

Max

Units

volts

dBm

volts

°C

V_EE

|V_CC- V_EE|

V_Logic

Logic Threshold Voltage

CW RF Input Power

V_CC- 1.5

V_CC-1.2

+10

P_in(CW)

V_RFin

DC Input Voltage (@ RFin or RF_inPorts)

Backside Operating Temperature

V_CC0.5

+85

T_BS

-40

-65

T_st

Storage Temperature

+165

310

°C

T_max

Maximum Assembly Temperature (60 seconds max)

°C

Notes:

1. Operation in excess of any parameter limit (except T ) may cause permanent damage to the device.

2. MTTF >1 x 10 hours @ T <85°C. Operation in excess of maximum operating temperature (T ) will degrade MTTF.

DC Specifications/Physical Properties

(T = +25 °C, V - V = 5.0 volts, unless otherwise listed)

Symbol

Parameters/Conditions

Min

Typ

Max

Units

V_CC- V_EE

Operating bias supply difference¹

Bias supply current

4.5

5.0

6.5

volts

|I_CC| or |I_EE|

V_RFin(q)

Quiescent dc voltage appearing at all RF ports

V_CC

volts

V_RFout(q)

V_Logic

Nominal ECL Logic Level

V_CC-1.45

V_CC-1.32

V_CC-1.25

volts

(V_Logiccontact self-bias voltage, generated on-chip)

Notes:

1. Prescaler will operate over full specified supply voltage range. V or V not to exceed limits specified in Absolute Maximum Ratings section.

RF Specifications

(T = +25 °C, Z = 50 W, V - V = 5.0 volts)

Symbol

Parameters/Conditions

Min

Typ

Max

Units

ƒ_in(max)

ƒ_in(min)

ƒ_Sel-Osc.

P_in

Maximum input frequency of operation

Minimum input frequency of operation¹(P_in= -10 dBm)

Output Self-Oscillation Frequency²

@ DC, (Square-wave input)

GHz

dBm

0.2

0.5

3.4

-15

-10

-5

>-25

>-20

>-15

>-10

+10

@ ƒ_in= 500 MHz, (Sine-wave input)

ƒ_in= 1 to 8 GHz

ƒ_in= 8 to 10 GHz

ƒ_in= 10 to 12 GHz

-1

S₁₂

Small-Signal Input/Output Return Loss (@ ƒ_in<10 GHz)

Small-Signal Reverse Isolation (@ ƒ_in<10 GHz)

SSB Phase noise (@ P_in= 0 dBm, 100 KHz offset from a ƒ_out =

1.2 GHz Carrier)

-153

dBc/Hz

Jitter

Input signal time variation @ zero-crossing (ƒ_in= 10 GHz, P_in=

-10 dBm)

T_ror T_f

Output transition time (10% to 90% rise/fall time)

@ ƒ_out< 1 GHz

P_out

-2.0

-3.5

-4.5

0.0

dBm

volts

dBm

@ ƒ_out= 2.5 GHz

-1.5

-2.5

0.5

@ ƒ_out= 3.0 GHz

|V_out(p-p)

@ ƒ_out< 1 GHz

@ ƒ_out= 2.5 GHz

0.42

0.37

-50

@ ƒ_out= 3.0 GHz

P_Spitback

ƒ_outpower level appearing at RF_inor RF_out(@ ƒ_in10 GHz,

Unused RF_outor RF_outunterminated)

ƒ_outpower level appearing at RF_inor RF_out(@ ƒ_in10 GHz, Both

RF_outor RF_outunterminated)

-55

-30

-25

dBm

dBc

P_feedthru

Power level of ƒ_inappearing at RF_outor RF_out(@ ƒ_in= 12 GHz,

Pin = 0 dBm, Referred to P_in(ƒ_in))

H₂

Second harmonic distortion output level (@ ƒ_out= 3.0 GHz,

Referred to P_out(ƒ_out))

Notes:

1. For sine–wave input signal. Prescaler will operate down to dc for square–wave input signal. Min. divide frequency limited by input slew rate.

2. Prescaler can exhibit this output signal under bias in the absence of an RF input signal. This condition can be eliminated by use of the Input dc offset

technique described on page 4.

3. Fundamental of output square wave’s Fourier Series.

4. Square wave amplitude calculated from P

out

Applications

TheHMMC-3122isdesignedfor

use in high frequency

communications, microwave

instrumentation, and EW radar

systems where low phase–noise

PLL control circuitry or broad–

band frequency translation is

required.

For positive supply operation,

V pins are nominally biased at If an RF signal with sufficient

Input dc Offset

any voltage in the +4.5 to +6.5

volt range with pin 8 (V

grounded. For negative bias

signal to noise ratio is present at

the RF input lead, the prescaler

will operate and provide a

)

operationV pins are typically

grounded and a negative voltage

between-4.5 to- 6.5voltsis

divided output equal the input

frequencydivided by the divide

modulus. Under certain “ideal”

conditions where the input is

well matched at the right input

frequency, the component may

“self–oscillate”, especially under

small signal input powers or

with only noise present at the

input. This“self–oscillation”will

produce an undesired output

signalalso known as a false

trigger.Topreventfalsetriggers

or self– oscillationconditions,

apply a 20 to 100 mV dc offset

voltagebetween the RFin and

RFin ports. This prevents noise

or spurious low level signals

fromtriggeringthedivider.

appliedto pin 8 (V ).

Operation

ac–Coupling and dc–Blocking

All RF ports are dc connected

The device is designed to

operatewhen driven with either

a single–endedordifferential

sinusoidalinput signal over a

200 MHz to 12 GHz bandwidth.

Below200 MHz the prescaler

input is “slew–rate” limited,

requiringfastrisingandfalling

edge speeds to properly divide.

The device will operate at

frequenciesdown to dc when

driven with a square–wave.

on–chip to the V contact

through on–chip 50W resistors.

Under any bias conditions where

is not dc grounded the RF

ports should be ac coupled via

series capacitors mounted on

the PC– board at each RF port.

Only under biasconditions

where V is dc grounded (as is

typical for negativebias supply

operation) maythe RF ports be

direct coupled to adjacent

circuitry or in some cases,such

as level shifting to subsequent

stages. In the latter case the

package heat sink may be

Due to the presence of an off–

chip RF–bypass capacitor inside

the package (connected to the

Adding a 10KW resistorbetween

the unused RF input to a contact

point at the VEE potentialwill

contact on the device), and

the unique design of the device

itself, the component may be

biasedfrom either a single

“floated” and bias applied as the result in an offset of» 25mV

differencebetweenV and V

betweenthe RF inputs. Note,

however, that the input

sensitivitywill be reduced

slightly due tothe presence of

thisoffset.

positiveor single negative

supply bias. The backside of the

package is not dc connected to

any dc bias point on the device.

V_CC

150p

poss

OUT

Pin 1

Vpwr

sel

SOIC8 w/Backside GND

V_EE

Figure 1. Simplified Schematic

Assembly Notes

Agilent application note #54,

“GaAs MMIC ESD, Die Attach

and Bonding Guidelines”

providesbasic information on

these subjects.

Independent of the bias applied

to the package, the backside of

the package should always be

connected to both a good RF

ground plane and a good

thermalheat sinking region on

the PC–board to optimize

performance. For single–ended

output operation the unused RF

output lead should be

A minimum RF and thermal PC

board contact area equal to or

greater than 2.67 x 1.65 mm

(0.105" x 0.065") with eight

0.020" diameter plated–wall

thermal vias is recommended.

Moisture Sensitivity

Classification: Class 1, per

JESD22-A112-A.

MMIC ESD precautions,

handling considerations, die

attachand bonding methods are

critical factorsinsuccessful

GaAs MMIC performance and

reliability.

Additional References:

PN #18, “HBT Prescaler

Evaluation Board.”

terminated into50W to a contact

point at the V potentialorto

RF groundthrough a dc blocking

capacitor.

Notes:

All dimensions in millimeters.

Refer to JEDEC Outline MS-012 for

additional tolerances.

Symbol

Min

1.35

0.0

Max

1.75

.25

0.33

0.19

4.80

3.80

0.51

.025

5.00

4.00

1.27 BSC

5.80

0.40

0°

6.20

1.27

8°

Figure 2. Package & Dimensions

Exposed heat slug area on pkg bottom =

2.67 x 1.65

Exposed heat sink on package bottom must

be soldered to PCB RF ground plane.

+6.5 volts

)

(+4.5 to

~ 1 mf Mo

noblock

Capacitor

To operate component from a negative supply, ground each

connection and supply V witha negative voltage (-4.5

to -6.5v)bypassed to ground with~1 mf capacitor.

RFin

RFout

RFin

RFout

RF shouldbeterminatedin50 to ground. (dc blocking

out

capacitor required for positive bias configuration.)

Exposed heat sink on package bottom

must be soldered toPCB RF ground.

Figure 3. Assembly Diagram (Single-supply, Positive-bias Configuration shown)

Supplemental Data

Figure 4. Typical Input Sensitivity Window

Figure 5. Typical Supply Current & V

vs. Supply Voltage

Logic

Figure 6. Typical Phase Noise Performance

Figure 7. Typical Output Power vs. Output Frequency ƒ (GHz)

out

Figure 8. Typical “Spitback” Power (Pƒ

appearing at RF input port

)

out

Device Orientation

Reel

Tape

User

Feed

Direction

Cover Tape

Tape Dimensions and Product Orientation

2.0 0.05

See Note 6

1.5+0.1/-0.0

4.0

See Note 1

0.30 0.05

1.75

R0.3 MAX.

5.5 0.05

See Note 6

12.0 0.3

R0.5 Typical

1.5 MIN

SECTION A-A

Ao =6.4mm

8.0

Bo =5.2 mm

Ko =2.1 mm

Notes:

1. 10 sprocket hole pitch cumulative tolerance: 0.2mm.

2. Camber not to exceed 1mm in 100mm.

3. Material: Black Conductive Advantek Polystyrene.

4. Ao and Bo measured on a plane 0.3mm above the bottom of the pocket.

5. Ko measured from a plane on the inside bottom of the pocket to the top surface of the carrier.

6. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole.

www.agilent.com/

semiconductors

Forproductinformationandacompletelistof

distributors, please go to our web site.

For technical assistance call:

Americas/Canada: +1 (800) 235-0312 or

(916)788-6763

Europe: +49 (0) 6441 92460

China: 10800 650 0017

Hong Kong: (+65) 6756 2394

India, Australia, New Zealand: (+65) 6755 1939

Japan: (+81 3) 3335-8152(Domestic/International), or

0120-61-1280(DomesticOnly)

Korea: (+65) 6755 1989

Singapore, Malaysia, Vietnam, Thailand, Philippines,

Indonesia: (+65) 6755 2044

Taiwan: (+65) 6755 1843

Data subject to change.

Obsoletes:5988-6160EN

October7,2003

5989-0200EN

HMMC-3122-BLK [AGILENT]

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