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HSMS-282N-TR1

更新时间：2024-09-18 02:02:53

品牌：AGILENT

描述：Surface Mount RF Schottky Barrier Diodes

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HSMS-282N-TR1 概述

Surface Mount RF Schottky Barrier Diodes 表面贴装射频肖特基势垒二极管微波混频二极管

HSMS-282N-TR1 规格参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	SC-70	包装说明：	R-PDSO-G6
针数：	6	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.60
风险等级：	5.27	配置：	COMMON ANODE, 4 ELEMENTS
最大二极管电容：	1 pF	二极管元件材料：	SILICON
二极管类型：	MIXER DIODE	最大正向电压 (VF)：	0.7 V
频带：	C BAND	JESD-30 代码：	R-PDSO-G6
JESD-609代码：	e0	元件数量：	4
端子数量：	6	最高工作温度：	150 °C
最低工作温度：	-65 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
最大重复峰值反向电压：	15 V	最大反向电流：	0.1 µA
反向测试电压：	1 V	子类别：	Other Diodes
表面贴装：	YES	技术：	SCHOTTKY
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED

HSMS-282N-TR1 数据手册

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Surface Mount RF Schottky

Barrier Diodes

Technical Data

HSMS-282x Series

Features

Package Lead Code Identification, SOT-23/SOT-143

(Top View)

• Low Turn-On Voltage

(As Low as 0.34 V at 1 mA)

COMMON

ANODE

COMMON

CATHODE

SINGLE

SERIES

• Low FIT (Failure in Time)

Rate*

• Six-sigma Quality Level

• Single, Dual and Quad

Versions

UNCONNECTED

PAIR

RING

QUAD

BRIDGE

QUAD

CROSS-OVER

QUAD

• Unique Configurations in

Surface Mount SOT-363

Package

– increase flexibility

– save board space

– reduce cost

Package Lead Code

Identification, SOT-323

(Top View)

Package Lead Code

Identification, SOT-363

(Top View)

• HSMS-282K Grounded

Center Leads Provide up to

10 dB Higher Isolation

HIGH ISOLATION

UNCONNECTED

UNCONNECTED PAIR

• Matched Diodes for

Consistent Performance

SERIES

SINGLE

TRIO

• Better Thermal Conductivity

for Higher Power Dissipation

For more information see the

Surface Mount Schottky Reliability

Data Sheet.

COMMON

ANODE

COMMON

CATHODE

COMMON

CATHODE QUAD

COMMON

ANODE QUAD

Description/Applications

These Schottky diodes are

specifically designed for both

analog and digital applications.

This series offers a wide range of

specifications and package

configurations to give the

designer wide flexibility. Typical

applications of these Schottky

diodes are mixing, detecting,

switching, sampling, clamping,

and wave shaping. The

best all-around choice for most

applications, featuring low series

resistance, low forward voltage at

all current levels and good RF

characteristics.

BRIDGE

QUAD

RING

QUAD

Note that Agilent’s manufacturing

techniques assure that dice found

in pairs and quads are taken from

adjacent sites on the wafer,

assuring the highest degree of

match.

HSMS-282x series of diodes is the

Absolute Maximum Ratings^[1]T_C= 25°C

Pin Connections and

Package Marking

Symbol Parameter

Unit SOT-23/SOT-143 SOT-323/SOT-363

I_f

Forward Current (1 µs Pulse) Amp

P_IV

T_j

Peak Inverse Voltage

Junction Temperature

Storage Temperature

Thermal Resistance^[2]

°C

150

T_stg

θ_jc

°C

-65 to 150

500

-65 to 150

150

°C/W

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to

the device.

1. Package marking provides

orientation and identification.

2. See “Electrical Specifications” for

appropriate package marking.

_C= +25°C, where T_Cis defined to be the temperature at the package pins where

contact is made to the circuit board.

Electrical Specifications T_C= 25°

C, Single Diode^[4]

Maximum Maximum

Minimum Maximum Forward

Reverse

Leakage

Typical

Dynamic

Part

Package

Breakdown Forward

Voltage

V_F(V) @

I_F(mA)

Maximum

Number Marking Lead

Voltage

V_BR(V)

Voltage

V_F(mV)

I_R(nA) @ Capacitance Resistance

V_R(V)

HSMS^[5]

Code

Code Configuration

C_T(pF)

R_D(Ω)^[6]

2820

2822

2823

2824

2825

2827

2828

2829

282B

282C

282E

282F

282K

C0^[3]

C2^[3]

C3^[3]

C4^[3]

C5^[3]

C7^[3]

C8^[3]

C9^[3]

C0^[7]

C2^[7]

C3^[7]

C4^[7]

CK^[7]

Single

Series

340

0.5 10

100

1.0

Common Anode

Common Cathode

Unconnected Pair

Ring Quad^[5]

Bridge Quad^[5]

Cross-over Quad

Single

Series

Common Anode

Common Cathode

High Isolation

Unconnected Pair

Unconnected Trio

Common Cathode Quad

Common Anode Quad

Bridge Quad

282L

282M

282N

282P

282R

CL^[7]

HH^[7]

NN^[7]

CP^[7]

OO^[7]

Ring Quad

Test Conditions

_R= 100 µA I_F= 1 mA^[1]

V_F= 0 V

I_F= 5 mA

f = 1 MHz^[2]

Notes:

1. ∆V_Ffor diodes in pairs and quads in 15 mV maximum at 1 mA.

2. ∆C_TOfor diodes in pairs and quads is 0.2 pF maximum.

3. Package marking code is in white.

4. Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.

5. See section titled “Quad Capacitance.”

6. R_D= R_S+ 5.2Ω at 25°C and I_f= 5 mA.

7. Package marking code is laser marked.

Quad Capacitance

Capacitance of Schottky diode

quads is measured using an

HP4271 LCR meter. This

In a quad, the diagonal capaci-

tance is the capacitance between

points A and B as shown in the

figure below. The diagonal

capacitance is calculated using

the following formula

The equivalent adjacent

capacitance is the capacitance

between points A and C in the

figure below. This capacitance is

calculated using the following

formula

instrument effectively isolates

individual diode branches from

the others, allowing accurate

capacitance measurement of each

branch or each diode. The

conditions are: 20 mV R.M.S.

voltage at 1 MHz. Agilent defines

this measurement as “CM”, and it

is equivalent to the capacitance of

the diode by itself. The equivalent

diagonal and adjacent capaci-

tances can then be calculated by

the formulas given below.

C₁x C₂

C x C₄

C_DIAGONAL= _______ + __³_____

C_ADJACENT= C₁+ ____________

C₁+ C₂C₃+ C₄

–– + –– + ––

C₂C₃C₄

C₁

C₂

C₃

This information does not apply

to cross-over quad diodes.

C₄

SPICE Parameters

Parameter Units HSMS-282x

Linear Equivalent Circuit Model

Diode Chip

B_V

C_J0

E_G

I_BV

I_S

0.7

0.69

1E-4

2.2E-8

R_S

P_B

1.08

6.0

Ω

R_S= series resistance (see Table of SPICE parameters)

0.65

C_j= junction capacitance (see Table of SPICE parameters)

P_T

8.33 X 10^-5nT

R_j=

0.5

I_b+ I_s

where

I_b= externally applied bias current in amps

I_s= saturation current (see table of SPICE parameters)

T = temperature,°K

n = ideality factor (see table of SPICE parameters)

Note:

To effectively model the packaged HSMS-282x product,

please refer to Application Note AN1124.

ESD WARNING:

Handling Precautions Should Be Taken To Avoid Static Discharge.

Typical Performance, T_C= 25°C (unless otherwise noted), Single Diode

100,000

100

T_A= +125ϒC

T_A= +75ϒC

T_A= +25ϒC

0.8

10,000

1000

100

_A= –25ϒC

0.6

0.4

0.1

T_A= +125ϒC

T_A= +75ϒC

T_A= +25ϒC

0.2

0.01

0.10

0.20

0.30

0.40

0.50

– REVERSE VOLTAGE (V)

– FORWARD VOLTAGE (V)

Figure 3. Total Capacitance vs.

Reverse Voltage.

Figure 2. Reverse Current vs.

Reverse Voltage at Temperatures.

Figure 1. Forward Current vs.

Forward Voltage at Temperatures.

1000

100

1.0

(Left Scale)

∆

V (Right Scale)

∆

V (Right Scale)

0.3

0.2

0.3

0.10

0.1

0.25

0.1

100

0.4

0.6

0.8

1.0

1.2

1.4

0.15

V - FORWARD VOLTAGE (V)

0.20

– FORWARD CURRENT (mA)

- FORWARD VOLTAGE (V)

Figure 4. Dynamic Resistance vs.

Forward Current.

Figure 5. Typical V Match, Series Pairs

and Quads at Mixer Bias Levels.

Figure 6. Typical V Match, Series Pairs

at Detector Bias Levels.

DC bias = 3 µA

-25°C

+25°C

+75°C

0.1

0.01

18 nH HSMS-282B

HSMS-282B

100 pF

+25°C

RF in

0.001

0.01

3.3 nH

68 Ω

100 pF

0.0001

1E-005

100 KΩ

4.7 KΩ

0.001

-40

-30

-20

-10

-20

-10

– INPUT POWER (dBm)

LOCAL OSCILLATOR POWER (dBm)

Figure 7. Typical Output Voltage vs.

Input Power, Small Signal Detector

Operating at 850 MHz.

Figure 8. Typical Output Voltage vs.

Input Power, Large Signal Detector

Operating at 915 MHz.

Figure 9. Typical Conversion Loss vs.

L.O. Drive, 2.0 GHz (Ref AN997).

need very low flicker noise. The

HSMS-285x is a family of zero bias

detector diodes for small signal

applications. For high frequency

detector or mixer applications,

use the HSMS-286x family. The

HSMS-270x is a series of specialty

diodes for ultra high speed

clipping and clamping in digital

circuits.

8.33 X 10^-5n T

R_j= –––––––––––– = R_V– R_s

I _S+ I_b

Applications Information

Product Selection

Agilent’s family of surface mount

Schottky diodes provide unique

solutions to many design prob-

lems. Each is optimized for

certain applications.

0.026

≈ ––––– at 25°C

I_S+ I_b

where

n = ideality factor (see table of

SPICE parameters)

The first step in choosing the right

product is to select the diode type.

All of the products in the

T = temperature in °K

I_S= saturation current (see

table of SPICE parameters)

I_b= externally applied bias

current in amps

R_v= sum of junction and series

resistance, the slope of the

V-I curve

Schottky Barrier Diode

Characteristics

Stripped of its package, a

HSMS-282x family use the same

diode chip–they differ only in

package configuration. The same

is true of the HSMS-280x, -281x,

285x, -286x and -270x families.

Each family has a different set of

characteristics, which can be

compared most easily by consult-

ing the SPICE parameters given

on each data sheet.

Schottky barrier diode chip

consists of a metal-semiconductor

barrier formed by deposition of a

metal layer on a semiconductor.

The most common of several

different types, the passivated

diode, is shown in Figure 10,

along with its equivalent circuit.

I_Sis a function of diode barrier

height, and can range from

picoamps for high barrier diodes

to as much as 5 µA for very low

barrier diodes.

The HSMS-282x family has been

optimized for use in RF applica-

tions, such as

R_Sis the parasitic series resis-

tance of the diode, the sum of the

bondwire and leadframe resis-

tance, the resistance of the bulk

layer of silicon, etc. RF energy

coupled into R_Sis lost as heat—it

does not contribute to the recti-

fied output of the diode. C_Jis

parasitic junction capacitance of

the diode, controlled by the thick-

ness of the epitaxial layer and the

diameter of the Schottky contact.

R_jis the junction resistance of the

diode, a function of the total

The Height of the Schottky

Barrier

The current-voltage characteristic

of a Schottky barrier diode at

room temperature is described by

the following equation:

✓

DC biased small signal

detectors to 1.5 GHz.

✓

Biased or unbiased large

signal detectors (AGC or

power monitors) to 4 GHz.

V - IR_S

–––––

0.026

I = I_S(e

– 1)

✓

Mixers and frequency

multipliers to 6 GHz.

On a semi-log plot (as shown in

the Agilent catalog) the current

graph will be a straight line with

inverse slope 2.3 X 0.026 = 0.060

volts per cycle (until the effect of

The other feature of the

HSMS-282x family is its

unit-to-unit and lot-to-lot consis-

tency. The silicon chip used in this

series has been designed to use

the fewest possible processing

steps to minimize variations in

diode characteristics. Statistical

data on the consistency of this

product, in terms of SPICE

parameters, is available from

Agilent.

current flowing through it.

METAL

PASSIVATION

N-TYPE OR P-TYPE EPI LAYER

SCHOTTKY JUNCTION

N-TYPE OR P-TYPE SILICON SUBSTRATE

For those applications requiring

very high breakdown voltage, use

the HSMS-280x family of diodes.

Turn to the HSMS-281x when you

CROSS-SECTION OF SCHOTTKY

BARRIER DIODE CHIP

EQUIVALENT

CIRCUIT

Figure 10. Schottky Diode Chip.

R_Sis seen in a curve that droops

at high current). All Schottky

diode curves have the same slope,

but not necessarily the same

value of current for a given

voltage. This is determined by the

saturation current, I_S, and is

related to the barrier height of the

diode.

Small signal detectors are used as

very low cost receivers, and

require a reactive input imped-

ance matching network to

✓

The two diodes are in parallel

in the RF circuit, lowering the

input impedance and making

the design of the RF matching

network easier.

achieve adequate sensitivity and

output voltage. Those operating

with zero bias utilize the HSMS-

285x family of detector diodes.

However, superior performance

over temperature can be achieved

with the use of 3 to 30 µA of DC

bias. Such circuits will use the

HSMS-282x family of diodes if the

operating frequency is 1.5 GHz or

lower.

✓

The two diodes are in series

in the output (video) circuit,

doubling the output voltage.

Some cancellation of

even-order harmonics takes

place at the input.

Through the choice of p-type or

n-type silicon, and the selection

of metal, one can tailor the

characteristics of a Schottky

diode. Barrier height will be

altered, and at the same time C_J

and R_Swill be changed. In

general, very low barrier height

diodes (with high values of I_S,

suitable for zero bias applica-

tions) are realized on p-type

silicon. Such diodes suffer from

higher values of R_Sthan do the

n-type. Thus, p-type diodes are

generally reserved for detector

applications (where very high

values of R_Vswamp out high R_S)

and n-type diodes such as the

HSMS-282x are used for mixer

applications (where high L.O.

drive levels keep R_Vlow). DC

biased detectors and self-biased

detectors used in gain or power

control circuits.

DC Bias

Typical performance of single

diode detectors (using

Zero Biased Diodes

DC Biased Diodes

HSMS-2820 or HSMS-282B) can

be seen in the transfer curves

given in Figures 7 and 8. Such

detectors can be realized either

as series or shunt circuits, as

shown in Figure 11.

Figure 12. Voltage Doubler.

The most compact and lowest

cost form of the doubler is

achieved when the HSMS-2822 or

HSMS-282C series pair is used.

DC Bias

Both the detection sensitivity and

the DC forward voltage of a

biased Schottky detector are

temperature sensitive. Where

both must be compensated over a

wide range of temperatures, the

differential detector^[2]is often

used. Such a circuit requires that

the detector diode and the

Shunt inductor provides

video signal return

Shunt diode provides

video signal return

DC Bias

reference diode exhibit identical

characteristics at all DC bias

levels and at all temperatures.

This is accomplished through the

use of two diodes in one package,

for example the HSMS-2825 in

Figure 13. In the Agilent assembly

facility, the two dice in a surface

mount package are taken from

adjacent sites on the wafer (as

illustrated in Figure 14). This

Detector Applications

Zero Biased Diodes DC Biased Diodes

Detector circuits can be divided

into two types, large signal

(P_in> -20 dBm) and small signal

(P_in< -20 dBm). In general, the

former use resistive impedance

matching at the input to improve

flatness over frequency—this is

possible since the input signal

levels are high enough to produce

adequate output voltages without

the need for a high Q reactive

input matching network. These

circuits are self-biased (no

Figure 11. Single Diode Detectors.

The series and shunt circuits can

be combined into a voltage

doubler^[1], as shown in Figure 12.

The doubler offers three advan-

tages over the single diode

circuit.

external DC bias) and are used

for gain and power control of

amplifiers.

^[1]Agilent Application Note 956-4, “Schottky Diode Voltage Doubler.”

^[2]Raymond W. Waugh, “Designing Large-Signal Detectors for Handsets and Base

Stations,” Wireless Systems Design, Vol. 2, No. 7, July 1997, pp 42 – 48.

assures that the characteristics of

the two diodes are more highly

matched than would be possible

through individual testing and

hand matching.

detector diode

bias

differential

amplifier

bias

HSMS-282K

reference diode

matching

network

HSMS-282P

to differential amplifier

differential

amplifier

Figure 15. High Power Differential

Detector.

Figure 17. Voltage Doubler

Differential Detector.

The concept of the voltage

matching

network

While the differential detector

works well over temperature,

another design approach^[3]works

well for large signal detectors.

See Figure 18 for the schematic

and a physical layout of the

circuit. In this design, the two

4.7 KΩ resistors and diode D2 act

as a variable power divider,

assuring constant output voltage

over temperature and improving

output linearity.

HSMS-2825

doubler can be applied to the

differential detector, permitting

twice the output voltage for a

given input power (as well as

improving input impedance and

suppressing second harmonics).

Figure 13. Differential Detector.

However, care must be taken to

assure that the two reference

diodes closely match the two

detector diodes. One possible

configuration is given in Fig-

ure 16, using two HSMS-2825.

Board space can be saved

through the use of the HSMS-282P

open bridge quad, as shown in

Figure 17.

4.7 KΩ

33 pF

68Ω

33 pF

68Ω

Figure 14. Fabrication of Agilent

Diode Pairs.

bias

HSMS-2825

HSMS-282K

In high power applications,

coupling of RF energy from the

detector diode to the reference

diode can introduce error in the

differential detector. The

HSMS-282K

4.7 KΩ

differential

amplifier

Figure 18. Temperature Compensated

Detector.

HSMS-282K diode pair, in the six

lead SOT-363 package, has a

copper bar between the diodes

that adds 10 dB of additional

isolation between them. As this

part is manufactured in the

SOT-363 package it also provides

the benefit of being 40% smaller

than larger SOT-143 devices. The

HSMS-282K is illustrated in

Figure 15—note that the ground

connections must be made as

close to the package as possible

to minimize stray inductance to

ground.

HSMS-2825

In certain applications, such as a

dual-band cellphone handset

operating at both 900 and

1800 MHz, the second harmonics

generated in the power control

output detector when the handset

is working at 900 MHz can cause

problems. A filter at the output

can reduce unwanted emissions

at 1800 MHz in this case, but a

matching

HSMS-2825

network

Figure 16. Voltage Doubler

Differential Detector.

^[3]Hans Eriksson and Raymond W. Waugh, “A Temperature Compensated Linear Diode

Detector,” to be published.

lower cost solution is available^[4]

Illustrated schematically in

Figure 19, this circuit uses diode

D2 and its associated passive

components to cancel all even

order harmonics at the detector’s

RF input. Diodes D3 and D4

provide temperature compensa-

tion as described above. All four

diodes are contained in a single

HSMS- 282R package, as illus-

trated in the layout shown in

Figure 20.

A review of Figure 21 may lead to

the question as to why the

Mixer applications

The HSMS-282x family, with its

wide variety of packaging, can be

used to make excellent mixers at

frequencies up to 6 GHz.

HSMS-282R ring quad is open on

the ends. Distortion in double

balanced mixers can be reduced

if LO drive is increased, up to the

point where the Schottky diodes

are driven into saturation. Above

this point, increased LO drive will

not result in improvements in

distortion. The use of expensive

high barrier diodes (such as those

fabricated on GaAs) can take

advantage of higher LO drive

power, but a lower cost solution

is to use a eight (or twelve) diode

ring quad. The open design of the

HSMS-282R permits this to easily

be done, as shown in Figure 23.

The HSMS-2827 ring quad of

matched diodes (in the SOT-143

package) has been designed for

double balanced mixers. The

smaller (SOT-363) HSMS-282R ring

quad can similarly be used, if the

quad is closed with external

connections as shown in Figure 21.

RF in

V+

68 Ω

HSMS-282R

RF in

LO in

V–

LO in

RF in

IF out

C1 = C2 ≈ 100 pF

R1 = R2 = R3 = R4 = 4.7 KΩ

D1 & D2 & D3 & D4 = HSMS-282R

Figure 21. Double Balanced Mixer.

HSMS-282R

IF out

Figure 19. Schematic of Suppressed

Harmonic Detector.

Both of these networks require a

crossover or a three dimensional

circuit. A planar mixer can be

made using the SOT-143 cross-

over quad, HSMS-2829, as shown

in Figure 22. In this product, a

special lead frame permits the

crossover to be placed inside the

plastic package itself, eliminating

the need for via holes (or other

measures) in the RF portion of

the circuit itself.

Figure 23. Low Distortion Double

Balanced Mixer.

HSMS-282R

4.7 KΩ

V–

4.7 KΩ

This same technique can be used

in the single-balanced mixer.

Figure 24 shows such a mixer,

with two diodes in each spot

normally occupied by one. This

mixer, with a sufficiently high LO

drive level, will display low

distortion.

V+

100 pF

RF in

68 Ω

HSMS-2829

RF in

HSMS-282R

Figure 20. Layout of Suppressed

Harmonic Detector.

180°

Low pass

filter

hybrid

IF out

RF in

LO in

Note that the forgoing discussion

refers to the output voltage being

extracted at point V+ with respect

to ground. If a differential output

is taken at V+ with respect to V-,

the circuit acts as a voltage

doubler.

LO in

Figure 24. Low Distortion Balanced

Mixer.

IF out

Figure 22. Planar Double Balanced

Mixer.

^[4]Alan Rixon and Raymond W. Waugh, “A Suppressed Harmonic Power Detector for Dual

Band ‘Phones,” to be published.

Note that θ_jc, the thermal resis-

tance from diode junction to the

foot of the leads, is the sum of

two component resistances,

Sampling Applications

Diode Burnout

The six lead HSMS-282P can be

used in a sampling circuit, as

shown in Figure 25. As was the

case with the six lead HSMS-282R

in the mixer, the open bridge

quad is closed with traces on the

circuit board. The quad was not

closed internally so that it could

be used in other applications,

such as illustrated in Figure 17.

Any Schottky junction, be it an RF

diode or the gate of a MESFET, is

relatively delicate and can be

burned out with excessive RF

power. Many crystal video

receivers used in RFID (tag)

applications find themselves in

poorly controlled environments

where high power sources may be

present. Examples are the areas

around airport and FAA radars,

nearby ham radio operators, the

vicinity of a broadcast band

transmitter, etc. In such

θ_jc= θ_pkg+ θ_chip

(2)

Package thermal resistance for

the SOT-3x3 package is approxi-

mately 100°C/W, and the chip

thermal resistance for the

HSMS-282x family of diodes is

approximately 40°C/W. The

designer will have to add in the

thermal resistance from diode

case to ambient—a poor choice

of circuit board material or heat

sink design can make this number

very high.

sample

point

HSMS-282P

environments, the Schottky

diodes of the receiver can be

protected by a device known as a

limiter diode.^[5]Formerly

sampling

pulse

sampling circuit

available only in radar warning

receivers and other high cost

electronic warfare applications,

these diodes have been adapted to

commercial and consumer

circuits.

Equation (1) would be straightfor-

ward to solve but for the fact that

diode forward voltage is a func-

tion of temperature as well as

forward current. The equation for

V_fis:

Figure 25. Sampling Circuit.

Thermal Considerations

The obvious advantage of the

SOT-323 and SOT-363 over the

SOT-23 and SOT-142 is combina-

tion of smaller size and extra

leads. However, the copper

leadframe in the SOT-3x3 has a

thermal conductivity four times

higher than the Alloy 42

leadframe of the SOT-23 and

SOT-143, which enables the

smaller packages to dissipate

more power.

Agilent offers a complete line of

surface mountable PIN limiter

diodes. Most notably, our HSMP-

4820 (SOT-23) can act as a very

fast (nanosecond) power-sensitive

switch when placed between the

antenna and the Schottky diode,

shorting out the RF circuit

11600 (V_f– I_fR_s)

(3)

I_f= I_S

– 1

where n = ideality factor

T = temperature in °K

R_s= diode series resistance

temporarily and reflecting the

excessive RF energy back out the

antenna.

and I_S(diode saturation current)

is given by

The maximum junction tempera-

ture for these three families of

Schottky diodes is 150°C under

all operating conditions. The

following equation applies to the

thermal analysis of diodes:

)

298

– 4060

(

–

)

298

I_s= I₀

(

(4)

Tj = (V_fI_f+ P_RF) θ_jc+ T_a

(1)

Equation (4) is substituted into

equation (3), and equations (1)

where

and (3) are solved simultaneously

to obtain the value of junction

temperature for given values of

diode case temperature, DC

power dissipation and RF power

dissipation.

T_j= junction temperature

T_a= diode case temperature

θ_jc= thermal resistance

V_fI_f= DC power dissipated

^[5]Agilent Application Note 1050, “Low

Cost, Surface Mount Power Limiters.”

_RF= RF power dissipated

passes through one or more

SMT Assembly

Assembly Instructions

SOT-3x3 PCB Footprint

Recommended PCB pad layouts

for the miniature SOT-3x3 (SC-70)

packages are shown in Figures 26

and 27 (dimensions are in inches).

These layouts provide ample

allowance for package placement

by automated assembly equipment

without adding parasitics that

could impair the performance.

preheat zones. The preheat zones

increase the temperature of the

board and components to prevent

thermal shock and begin evaporat-

ing solvents from the solder paste.

The reflow zone briefly elevates

the temperature sufficiently to

produce a reflow of the solder.

Reliable assembly of surface

mount components is a complex

process that involves many

material, process, and equipment

factors, including: method of

heating (e.g., IR or vapor phase

reflow, wave soldering, etc.)

circuit board material, conductor

thickness and pattern, type of

solder alloy, and the thermal

conductivity and thermal mass of

components. Components with a

low mass, such as the SOT

packages, will reach solder reflow

temperatures faster than those

with a greater mass.

The rates of change of tempera-

ture for the ramp-up and cool-

down zones are chosen to be low

enough to not cause deformation

of the board or damage to compo-

nents due to thermal shock. The

maximum temperature in the

reflow zone (T_MAX) should not

exceed 235°C.

0.026

0.07

Agilent’s diodes have been

qualified to the time-temperature

profile shown in Figure 28. This

profile is representative of an IR

reflow type of surface mount

assembly process.

0.035

These parameters are typical for a

surface mount assembly process

for Agilent diodes. As a general

guideline, the circuit board and

components should be exposed

only to the minimum tempera-

tures and times necessary to

achieve a uniform reflow of

solder.

0.016

Figure 26. PCB Pad Layout, SOT-323

(dimensions in inches).

After ramping up from room

temperature, the circuit board

with components attached to it

(held in place with solder paste)

0.026

0.075

250

200

T_MAX

0.035

0.016

150

Reflow

Zone

Figure 27. PCB Pad Layout, SOT-363

(dimensions in inches).

100

Preheat

Zone

Cool Down

Zone

120

180

240

300

TIME (seconds)

Figure 28. Surface Mount Assembly Profile.

Part Number Ordering Information

No. of

Part Number

HSMS-282x-TR2*

HSMS-282x-TR1*

HSMS-282x-BLK *

Devices

10000

3000

Container

13" Reel

7" Reel

100

antistatic bag

x = 0, 2, 3, 4, 5, 7, 8, 9, B, C, E, F, K, L, M, N, P or R

Package Dimensions

Outline 23 (SOT-23)

1.02 (0.040)

Outline SOT-323 (SC-70 3 Lead)

PACKAGE

1.30 (0.051)

0.89 (0.035)

1.03 (0.041)

0.89 (0.035)

MARKING

CODE (XX)

DATE CODE (X)

0.54 (0.021)

0.37 (0.015)

REF.

DATE CODE (X)

PACKAGE

MARKING

CODE (XX)

2.20 (0.087)

2.00 (0.079)

1.35 (0.053)

1.15 (0.045)

X X X

1.40 (0.055)

1.20 (0.047)

2.65 (0.104)

2.10 (0.083)

X X X

0.650 BSC (0.025)

0.60 (0.024)

0.45 (0.018)

2.04 (0.080)

1.78 (0.070)

2.05 (0.080)

1.78 (0.070)

0.425 (0.017)

TYP.

2.20 (0.087)

1.80 (0.071)

0.10 (0.004)

0.00 (0.00)

TOP VIEW

0.30 REF.

0.180 (0.007)

0.085 (0.003)

0.152 (0.006)

0.086 (0.003)

3.06 (0.120)

2.80 (0.110)

0.20 (0.008)

0.10 (0.004)

1.00 (0.039)

0.80 (0.031)

0.25 (0.010)

0.15 (0.006)

1.04 (0.041)

0.85 (0.033)

10°

0.30 (0.012)

0.10 (0.004)

0.69 (0.027)

0.45 (0.018)

DIMENSIONS ARE IN MILLIMETERS (INCHES)

0.10 (0.004)

0.013 (0.0005)

SIDE VIEW

END VIEW

THESE DIMENSIONS FOR HSMS-280X AND -281X FAMILIES ONLY.

DIMENSIONS ARE IN MILLIMETERS (INCHES)

Outline SOT-363 (SC-70 6 Lead)

Outline 143 (SOT-143)

0.92 (0.036)

0.78 (0.031)

PACKAGE

1.30 (0.051)

MARKING

CODE (XX)

DATE CODE (X)

REF.

DATE CODE (X)

PACKAGE

MARKING

CODE (XX)

1.40 (0.055)

1.20 (0.047)

2.65 (0.104)

2.10 (0.083)

2.20 (0.087)

2.00 (0.079)

1.35 (0.053)

1.15 (0.045)

X X X

0.60 (0.024)

0.45 (0.018)

0.650 BSC (0.025)

0.54 (0.021)

0.37 (0.015)

0.425 (0.017)

TYP.

2.04 (0.080)

1.78 (0.070)

2.20 (0.087)

1.80 (0.071)

3.06 (0.120)

2.80 (0.110)

0.15 (0.006)

0.09 (0.003)

0.10 (0.004)

0.00 (0.00)

0.30 REF.

1.04 (0.041)

0.85 (0.033)

1.00 (0.039)

0.80 (0.031)

0.20 (0.008)

0.10 (0.004)

0.69 (0.027)

0.45 (0.018)

0.10 (0.004)

0.013 (0.0005)

10°

0.30 (0.012)

0.10 (0.004)

0.25 (0.010)

0.15 (0.006)

DIMENSIONS ARE IN MILLIMETERS (INCHES)

Device Orientation

REEL

TOP VIEW

4 mm

END VIEW

8 mm

CARRIER

TAPE

###

USER

FEED

DIRECTION

Note: “###” represents Package Marking Code.

Package marking is right side up with carrier tape

perforations at top. Conforms to Electronic

Industries RS-481, “Taping of Surface Mounted

Components for Automated Placement.”

COVER TAPE

Standard quantity is 3,000 devices per reel.

Tape Dimensions and Product Orientation

For Outline SOT-323 (SC-70 3 Lead)

(CARRIER TAPE THICKNESS)

T (COVER TAPE THICKNESS)

8° MAX.

5° MAX.

DESCRIPTION

SYMBOL

SIZE (mm)

SIZE (INCHES)

CAVITY

LENGTH

WIDTH

DEPTH

PITCH

2.24 ± 0.10

2.34 ± 0.10

1.22 ± 0.10

4.00 ± 0.10

1.00 + 0.25

0.088 ± 0.004

0.092 ± 0.004

0.048 ± 0.004

0.157 ± 0.004

0.039 + 0.010

BOTTOM HOLE DIAMETER

PERFORATION

DIAMETER

PITCH

POSITION

1.55 ± 0.05

4.00 ± 0.10

1.75 ± 0.10

0.061 ± 0.002

0.157 ± 0.004

0.069 ± 0.004

CARRIER TAPE WIDTH

THICKNESS

8.00 ± 0.30

0.315 ± 0.012

0.255 ± 0.013 0.010 ± 0.0005

5.4 ± 0.10 0.205 ± 0.004

0.062 ± 0.001 0.0025 ± 0.00004

COVER TAPE

WIDTH

TAPE THICKNESS

DISTANCE

CAVITY TO PERFORATION

(WIDTH DIRECTION)

3.50 ± 0.05

0.138 ± 0.002

www.semiconductor.agilent.com

Data subject to change.

CAVITY TO PERFORATION

(LENGTH DIRECTION)

2.00 ± 0.05

0.079 ± 0.002

Obsoletes 5968-2356E, 5968-5934E

5968-8014E (1/00)

Tape Dimensions and Product Orientation

For Outline SOT-23

D₀

10 PITCHES CUMULATIVE

TOLERANCE ON TAPE

P₀

±0.2 MM (±0.008)

COVER

TAPE

P₂

EMBOSSMENT

USER FEED

DIRECTION

P₁

D₁

CENTER LINES

OF CAVITY

DESCRIPTION

SYMBOL

SIZE (mm)

SIZE (INCHES)

CAVITY

LENGTH

WIDTH

DEPTH

PITCH

3.15 ± 0.15

2.65 ± 0.25

1.30 ± 0.10

4.00 ± 0.10

1.00 min.

0.124 ± 0.006

0.104 ± 0.010

0.051 ± 0.004

0.157 ± 0.004

0.04 min.

BOTTOM HOLE DIAMETER

PERFORATION

DIAMETER

PITCH

POSITION

1.55 + 0.10/-0 0.061 + 0.004/-0

4.00 ± 0.10

1.75 ± 0.10

0.157 ± 0.004

0.069 ± 0.004

CARRIER TAPE WIDTH

THICKNESS

8.00 ± 0.2

0.30 ± 0.05

0.315 ± 0.008

0.012 ± 0.002

COVER TAPE

WIDTH

TAPE THICKNESS

5.40 ± 0.25

0.064 ± 0.01

0.205 ± 0.010

0.003 ± 0.0004

DISTANCE

BETWEEN

CENTERLINE

CAVITY TO PERFORATION

(WIDTH DIRECTION)

3.50 ± 0.10

0.138 ± 0.004

CAVITY TO PERFORATION

(LENGTH DIRECTION)

2.00 ± 0.05

0.079 ± 0.002

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