MSA-0436-TR1G

更新时间:2025-07-04 12:58:41
品牌:AGILENT
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Cascadable Silicon Bipolar  
MMIC Amplifiers  
Technical Data  
MSA-0435, -0436  
35 micro-X Package[1]  
designed for use as a general  
Features  
purpose 50 gain block. Typical  
applications include narrow and  
broad band IF and RF amplifiers  
in industrial and military applica-  
tions.  
• Cascadable 50 Gain Block  
• 3 dB Bandwidth:  
DC to 3.8 GHz  
• 12.5 dBm Typical P1 dB at  
1.0 GHz  
The MSA-series is fabricated using  
• 8.5 dB Typical Gain at  
1.0 GHz  
HP’s10GHzf ,25 GHzf  
,
T
MAX  
silicon bipolar MMIC process  
which uses nitride self-alignment,  
ion implantation, and gold metalli-  
zation to achieve excellent  
performance, uniformity and  
reliability. The use of an external  
bias resistor for temperature and  
current stability also allows bias  
flexibility.  
• Unconditionally Stable  
(k>1)  
Note:  
1. Short leaded 36 package available  
upon request.  
• Cost Effective Ceramic  
Microstrip Package  
Description  
The MSA-0435 is a high perfor-  
mance silicon bipolar Monolithic  
Microwave Integrated Circuit  
(MMIC) housed in a cost effective,  
microstrip package. This MMIC is  
Available in cut lead version  
(package36)asMSA-0436.  
Typical Biasing Configuration  
R
bias  
VCC > 7 V  
RFC (Optional)  
4
C
C
block  
block  
3
IN  
MSA  
OUT  
1
V
= 5.25 V  
d
2
5965-9575E  
6-330  
MSA-0435, -0436 Absolute Maximum Ratings  
Thermal Resistance[2,5]  
:
Parameter  
AbsoluteMaximum[1]  
θjc =140°C/W  
Device Current  
Power Dissipation[2,3]  
RF Input Power  
Junction Temperature  
Storage Temperature[4]  
100mA  
650mW  
+13dBm  
200°C  
–65to200°C  
Notes:  
1. Permanent damage may occur if any of these limits are exceeded.  
2. TCASE =25°C.  
3. Derate at 7.1 mW/°C for TC > 109°C.  
4. Storage above +150°C may tarnish the leads of this package making it  
difficult to solder into a circuit.  
5. The small spot size of this technique results in a higher, though more  
accurate determination of qjc than do alternate methods. See MEASURE-  
MENTS section “Thermal Resistance” for more information.  
Electrical Specifications[1], TA = 25°C  
Symbol  
Parameters and Test Conditions: Id = 50 mA, ZO = 50  
Units Min. Typ. Max.  
GP  
PowerGain(|S21|2)  
f=0.1GHz  
dB  
dB  
7.5  
8.5  
± 0.6  
3.8  
9.5  
GP  
f3 dB  
Gain Flatness  
f=0.1to2.5GHz  
± 1.0  
3 dB Bandwidth  
GHz  
Input VSWR  
f=0.1to2.5GHz  
f=0.1to2.5GHz  
f=1.0GHz  
1.4:1  
1.9:1  
6.5  
VSWR  
Output VSWR  
NF  
50 Noise Figure  
dB  
dBm  
dBm  
psec  
V
P1 dB  
IP3  
Output Power at 1 dB Gain Compression  
Third Order Intercept Point  
Group Delay  
f=1.0GHz  
12.5  
25.5  
125  
f=1.0GHz  
tD  
f=1.0GHz  
Vd  
Device Voltage  
4.75  
5.25  
–8.0  
5.75  
dV/dT  
Device Voltage Temperature Coefficient  
mV/°C  
Note:  
1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current  
is on the following page.  
Part Number Ordering Information  
Part Number  
No. of Devices  
Container  
MSA-0435  
MSA-0436-BLK  
MSA-0436-TR1  
10  
100  
1000  
Strip  
Antistatic Bag  
7" Reel  
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.  
6-331  
MSA-0435, -0436 Typical Scattering Parameters (ZO = 50 , TA = 25°C, Id = 50 mA)  
S11  
S21  
S12  
S22  
Freq.  
GHz  
Mag  
Ang  
dB  
Mag  
Ang  
dB  
Mag  
Ang  
Mag  
Ang  
0.1  
0.2  
0.4  
0.6  
0.8  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
.08  
.08  
.07  
.07  
.05  
.05  
.04  
.09  
.14  
.22  
.28  
.34  
.37  
.42  
175  
172  
8.5  
8.5  
8.5  
8.5  
8.4  
8.3  
8.1  
7.8  
7.3  
6.6  
5.8  
4.8  
3.9  
3.0  
2.67  
2.68  
2.67  
2.66  
2.64  
2.61  
2.55  
2.46  
2.33  
2.14  
1.94  
1.74  
1.57  
1.41  
175  
170  
161  
151  
142  
136  
109  
87  
–16.4  
–16.3  
–16.4  
–16.2  
–16.1  
–16.0  
–15.0  
–14.2  
–13.1  
–12.5  
–11.7  
–11.3  
–10.7  
–10.4  
.151  
.153  
.151  
.155  
.156  
.159  
.178  
.196  
.221  
.238  
.260  
.271  
.291  
.302  
1
2
.20  
.20  
.20  
.21  
.22  
.24  
.26  
.28  
.31  
.33  
.35  
.34  
.33  
.32  
–10  
–16  
171  
3
–33  
166  
6
8
–45  
169  
–57  
175  
10  
13  
15  
18  
14  
9
4
–2  
–8  
–68  
–142  
–145  
–154  
–175  
170  
–96  
–123  
–140  
–160  
–173  
–179  
–171  
–160  
71  
50  
32  
156  
15  
140  
–1  
120  
–16  
A model for this device is available in the DEVICE MODELS section.  
Typical Performance, TA = 25°C  
(unless otherwise noted)  
80  
12  
10  
8
9
8
7
6
5
T
T
T
= +125°C  
= +25°C  
= –55°C  
C
C
C
60  
Gain Flat to DC  
6
40  
4
20  
0
0.1 GHz  
1.0 GHz  
2.0 GHz  
2
0
4
0.1  
0.3 0.5  
1.0  
3.0 6.0  
1
2
3
4
5
6
7
20  
30  
40  
50  
(mA)  
60  
70  
FREQUENCY (GHz)  
V
(V)  
I
d
d
Figure 1. Typical Power Gain vs.  
Frequency, TA = 25°C, Id = 50 mA.  
Figure 2. Device Current vs. Voltage.  
Figure 3. Power Gain vs. Current.  
21  
18  
7.5  
7.0  
13  
12  
11  
P
1 dB  
I
= 70 mA  
d
15  
12  
9
10  
9
6.5  
6.0  
I
I
= 50 mA  
= 30 mA  
d
d
8
7
6
8
G
P
7
I
I
I
= 30 mA  
= 50 mA  
= 70 mA  
d
d
d
6
NF  
6
5
3
0.1  
5
5.5  
0.2 0.3 0.5  
1.0  
2.0  
4.0  
4.0  
0.1  
0.2 0.3 0.5  
1.0  
2.0  
–55 –25  
+25  
+85  
+125  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
TEMPERATURE, (°C)  
Figure 5. Output Power at 1 dB Gain  
Compression vs. Frequency.  
Figure 6. Noise Figure vs. Frequency.  
Figure 4. Output Power at 1 dB Gain  
Compression, NF and Power Gain vs.  
Case Temperature, f = 1.0 GHz,  
Id=50mA.  
6-332  
35 micro-X Package Dimensions  
4
GROUND  
.085  
2.15  
.083  
2.11  
DIA.  
RF OUTPUT  
AND BIAS  
RF INPUT  
1
3
.020  
.508  
2
GROUND  
Notes:  
(unless otherwise specified)  
in  
mm  
1. Dimensions are  
2. Tolerances  
.057 ± .010  
1.45 ± .25  
.100  
2.54  
in .xxx = ± 0.005  
mm .xx = ± 0.13  
.022  
.56  
.455 ± .030  
11.54 ± .75  
.006 ± .002  
.15 ± .05  
6-333  

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