MSA-0436-TR1G [AGILENT]

Cascadable Silicon Bipolar

MMIC Amplifiers

Technical Data

MSA-0435, -0436

Features

• Cascadable 50

Ω

Gain Block

• 3 dB Bandwidth:

DC to 3.8 GHz

• 12.5 dBm Typical P

1 dB

at

1.0 GHz

• 8.5 dB Typical Gain at

1.0 GHz

• Unconditionally Stable

(k>1)

• Cost Effective Ceramic

Microstrip Package

designed for use as a general

purpose 50

Ω

gain block. Typical

applications include narrow and

broad band IF and RF amplifiers

in industrial and military applica-

tions.

The MSA-series is fabricated using

HP’s 10 GHz f

T

, 25 GHz f

MAX

,

silicon bipolar MMIC process

which uses nitride self-alignment,

ion implantation, and gold metalli-

zation to achieve excellent

performance, uniformity and

reliability. The use of an external

bias resistor for temperature and

current stability also allows bias

flexibility.

Available in cut lead version

(package 36) as MSA-0436.

35 micro-X Package

[1]

Note:

1.

Short leaded 36 package available

upon request.

Description

The MSA-0435 is a high perfor-

mance silicon bipolar Monolithic

Microwave Integrated Circuit

(MMIC) housed in a cost effective,

microstrip package. This MMIC is

Typical Biasing Configuration

R

bias

V

CC

> 7 V

RFC (Optional)

4

C

block

3

IN

1

MSA

C

block

OUT

V

d

= 5.25 V

2

5965-9575E

6-330

MSA-0435, -0436 Absolute Maximum Ratings

Parameter

Device Current

Power Dissipation

[2,3]

RF Input Power

Junction Temperature

Storage Temperature

[4]

Absolute Maximum

[1]

100 mA

650 mW

+13 dBm

200°C

–65 to 200°C

Thermal Resistance

[2,5]

:

θ

jc

= 140°C/W

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. T

CASE

= 25°C.

3. Derate at 7.1 mW/°C for T

C

> 109°C.

4. Storage above +150°C may tarnish the leads of this package making it

difficult to solder into a circuit.

5. The small spot size of this technique results in a higher, though more

accurate determination of q

jc

than do alternate methods. See MEASURE-

MENTS section “Thermal Resistance” for more information.

Electrical Specifications

[1]

, T

A

= 25°C

Symbol

G

P

∆G

P

f

3 dB

VSWR

NF

P

1 dB

IP

3

t

D

V

d

dV/dT

Parameters and Test Conditions: I

d

= 50 mA, Z

O

= 50

Ω

Power Gain (|S

21

|

2

)

Gain Flatness

3 dB Bandwidth

Input VSWR

Output VSWR

50

Ω

Noise Figure

Output Power at 1 dB Gain Compression

Third Order Intercept Point

Group Delay

Device Voltage

Device Voltage Temperature Coefficient

f = 0.1 to 2.5 GHz

f = 0.1 to 2.5 GHz

f = 1.0 GHz

f = 1.0 GHz

f = 1.0 GHz

f = 1.0 GHz

f = 0.1 GHz

f = 0.1 to 2.5 GHz

Units

dB

dB

GHz

Min.

7.5

Typ.

8.5

±

0.6

3.8

1.4:1

1.9:1

Max.

9.5

±

1.0

dB

dBm

dBm

psec

V

mV/°C

4.75

6.5

12.5

25.5

125

5.25

–8.0

5.75

Note:

1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current

is on the following page.

Part Number Ordering Information

Part Number

MSA-0435

MSA-0436-BLK

MSA-0436-TR1

No. of Devices

10

100

1000

Container

Strip

Antistatic Bag

7" Reel

For more information, see “Tape and Reel Packaging for Semiconductor Devices”.

6-331

MSA-0435, -0436 Typical Scattering Parameters (Z

O

= 50

Ω,

T

A

= 25°C, I

d

= 50 mA)

Freq.

GHz

S

11

Mag

Ang

dB

S

21

Mag

Ang

dB

S

12

Mag

Ang

Mag

S

22

Ang

0.1

0.2

0.4

0.6

0.8

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

.08

.08

.07

.07

.05

.05

.04

.09

.14

.22

.28

.34

.37

.42

175

172

171

166

169

175

–142

–145

–154

–175

170

156

140

120

8.5

8.5

8.5

8.5

8.4

8.3

8.1

7.8

7.3

6.6

5.8

4.8

3.9

3.0

2.67

2.68

2.67

2.66

2.64

2.61

2.55

2.46

2.33

2.14

1.94

1.74

1.57

1.41

175

170

161

151

142

136

109

87

71

50

32

15

–1

–16

–16.4

–16.3

–16.4

–16.2

–16.1

–16.0

–15.0

–14.2

–13.1

–12.5

–11.7

–11.3

–10.7

–10.4

.151

.153

.151

.155

.156

.159

.178

.196

.221

.238

.260

.271

.291

.302

1

2

3

6

8

10

13

15

18

14

9

4

–2

–8

.20

.20

.20

.21

.22

.24

.26

.28

.31

.33

.35

.34

.33

.32

–10

–16

–33

–45

–57

–68

–96

–123

–140

–160

–173

–179

–171

–160

A model for this device is available in the DEVICE MODELS section.

Typical Performance, T

A

= 25°C

(unless otherwise noted)

12

10

60

8

6

4

20

2

0

0

1

2

3

4

V

d

(V)

5

6

7

5

0.1 GHz

1.0 GHz

2.0 GHz

20

30

40

50

I

d

(mA)

60

70

G

p

(dB)

I

d

= 70 mA

P

1 dB

(dBm)

15

12

9

NF (dB)

6

3

0.1

I

d

= 30 mA

6.0

I

d

= 30 mA

I

d

= 50 mA

I

d

= 70 mA

0.1

0.2 0.3

0.5

1.0

2.0

4.0

NF (dB)

0.5

1.0

2.0

4.0

I

d

= 50 mA

6.5

0.2 0.3

FREQUENCY (GHz)

G

p

(dB)

I

d

(mA)

Gain Flat to DC

7

80

T

C

= +125°C

T

C

= +25°C

T

C

= –55°C

9

8

40

6

0.1

0.3 0.5

1.0

3.0

6.0

4

FREQUENCY (GHz)

Figure 1. Typical Power Gain vs.

Frequency, T

A

= 25°C, I

d

= 50 mA.

Figure 2. Device Current vs. Voltage.

Figure 3. Power Gain vs. Current.

13

P

1 dB

(dBm)

12

11

10

9

G

p

(dB)

8

7

6

5

–55

–25

+25

NF

G

P

8

7

6

+85

5

+125

P

1 dB

21

18

7.5

7.0

5.5

TEMPERATURE, (°C)

FREQUENCY (GHz)

Figure 4. Output Power at 1 dB Gain

Compression, NF and Power Gain vs.

Case Temperature, f = 1.0 GHz,

I

d

=50mA.

Figure 5. Output Power at 1 dB Gain

Compression vs. Frequency.

Figure 6. Noise Figure vs. Frequency.

6-332

35 micro-X Package Dimensions

.085

2.15

4

GROUND

.083 DIA.

2.11

RF OUTPUT

AND BIAS

3

.020

.508

2

GROUND

Notes:

(unless otherwise specified)

1. Dimensions are in

mm

2. Tolerances

in .xxx =

±

0.005

mm .xx =

±

0.13

1

.057

±

.010

1.45

±

.25

.100

2.54

.022

.56

.455

±

.030

11.54

±

.75

.006

±

.002

.15

±

.05

A04

RF INPUT

6-333