MSA-0436-TR1G [AGILENT]

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MSA-0436-TR1G
元器件型号: MSA-0436-TR1G
生产厂家: AGILENT TECHNOLOGIES, LTD.    AGILENT TECHNOLOGIES, LTD.
描述和应用:

暂无描述

射频和微波射频放大器微波放大器
PDF文件: 总4页 (文件大小:53K)
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型号参数:MSA-0436-TR1G参数
生命周期Transferred
IHS 制造商HEWLETT PACKARD CO
Reach Compliance Codeunknown
风险等级5.07
Is SamacsysN
其他特性HIGH RELIABILITY
特性阻抗50 Ω
构造COMPONENT
增益7.5 dB
最大输入功率 (CW)13 dBm
最大工作频率3800 MHz
最小工作频率
射频/微波设备类型WIDE BAND LOW POWER
最大电压驻波比1.9
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
Cascadable Silicon Bipolar
MMIC Amplifiers
Technical Data
MSA-0435, -0436
Features
• Cascadable 50
Gain Block
• 3 dB Bandwidth:
DC to 3.8 GHz
• 12.5 dBm Typical P
1 dB
at
1.0 GHz
• 8.5 dB Typical Gain at
1.0 GHz
• Unconditionally Stable
(k>1)
• Cost Effective Ceramic
Microstrip Package
designed for use as a general
purpose 50
gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military applica-
tions.
The MSA-series is fabricated using
HP’s 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Available in cut lead version
(package 36) as MSA-0436.
35 micro-X Package
[1]
Note:
1.
Short leaded 36 package available
upon request.
Description
The MSA-0435 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
Typical Biasing Configuration
R
bias
V
CC
> 7 V
RFC (Optional)
4
C
block
3
IN
1
MSA
C
block
OUT
V
d
= 5.25 V
2
5965-9575E
6-330
MSA-0435, -0436 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
[4]
Absolute Maximum
[1]
100 mA
650 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance
[2,5]
:
θ
jc
= 140°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 7.1 mW/°C for T
C
> 109°C.
4. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more
accurate determination of q
jc
than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
∆G
P
f
3 dB
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Parameters and Test Conditions: I
d
= 50 mA, Z
O
= 50
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
Input VSWR
Output VSWR
50
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 0.1 to 2.5 GHz
f = 0.1 to 2.5 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 0.1 GHz
f = 0.1 to 2.5 GHz
Units
dB
dB
GHz
Min.
7.5
Typ.
8.5
±
0.6
3.8
1.4:1
1.9:1
Max.
9.5
±
1.0
dB
dBm
dBm
psec
V
mV/°C
4.75
6.5
12.5
25.5
125
5.25
–8.0
5.75
Note:
1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number
MSA-0435
MSA-0436-BLK
MSA-0436-TR1
No. of Devices
10
100
1000
Container
Strip
Antistatic Bag
7" Reel
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-331
MSA-0435, -0436 Typical Scattering Parameters (Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 50 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
.08
.08
.07
.07
.05
.05
.04
.09
.14
.22
.28
.34
.37
.42
175
172
171
166
169
175
–142
–145
–154
–175
170
156
140
120
8.5
8.5
8.5
8.5
8.4
8.3
8.1
7.8
7.3
6.6
5.8
4.8
3.9
3.0
2.67
2.68
2.67
2.66
2.64
2.61
2.55
2.46
2.33
2.14
1.94
1.74
1.57
1.41
175
170
161
151
142
136
109
87
71
50
32
15
–1
–16
–16.4
–16.3
–16.4
–16.2
–16.1
–16.0
–15.0
–14.2
–13.1
–12.5
–11.7
–11.3
–10.7
–10.4
.151
.153
.151
.155
.156
.159
.178
.196
.221
.238
.260
.271
.291
.302
1
2
3
6
8
10
13
15
18
14
9
4
–2
–8
.20
.20
.20
.21
.22
.24
.26
.28
.31
.33
.35
.34
.33
.32
–10
–16
–33
–45
–57
–68
–96
–123
–140
–160
–173
–179
–171
–160
A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
A
= 25°C
(unless otherwise noted)
12
10
60
8
6
4
20
2
0
0
1
2
3
4
V
d
(V)
5
6
7
5
0.1 GHz
1.0 GHz
2.0 GHz
20
30
40
50
I
d
(mA)
60
70
G
p
(dB)
I
d
= 70 mA
P
1 dB
(dBm)
15
12
9
NF (dB)
6
3
0.1
I
d
= 30 mA
6.0
I
d
= 30 mA
I
d
= 50 mA
I
d
= 70 mA
0.1
0.2 0.3
0.5
1.0
2.0
4.0
NF (dB)
0.5
1.0
2.0
4.0
I
d
= 50 mA
6.5
0.2 0.3
FREQUENCY (GHz)
G
p
(dB)
I
d
(mA)
Gain Flat to DC
7
80
T
C
= +125°C
T
C
= +25°C
T
C
= –55°C
9
8
40
6
0.1
0.3 0.5
1.0
3.0
6.0
4
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25°C, I
d
= 50 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
13
P
1 dB
(dBm)
12
11
10
9
G
p
(dB)
8
7
6
5
–55
–25
+25
NF
G
P
8
7
6
+85
5
+125
P
1 dB
21
18
7.5
7.0
5.5
TEMPERATURE, (°C)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
d
=50mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-332
35 micro-X Package Dimensions
.085
2.15
4
GROUND
.083 DIA.
2.11
RF OUTPUT
AND BIAS
3
.020
.508
2
GROUND
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx =
±
0.005
mm .xx =
±
0.13
1
.057
±
.010
1.45
±
.25
.100
2.54
.022
.56
.455
±
.030
11.54
±
.75
.006
±
.002
.15
±
.05
A04
RF INPUT
6-333
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