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MSA-0436-TR1G

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Cascadable Silicon Bipolar

MMIC Amplifiers

Technical Data

MSA-0435, -0436

35 micro-X Package^[1]

designed for use as a general

Features

purpose 50 Ω gain block. Typical

applications include narrow and

broad band IF and RF amplifiers

in industrial and military applica-

tions.

• Cascadable 50 Ω Gain Block

• 3 dB Bandwidth:

DC to 3.8 GHz

• 12.5 dBm Typical P_{1 dB}at

1.0 GHz

The MSA-series is fabricated using

• 8.5 dB Typical Gain at

1.0 GHz

HP’s10GHzf ,25 GHzf

MAX

silicon bipolar MMIC process

which uses nitride self-alignment,

ion implantation, and gold metalli-

zation to achieve excellent

performance, uniformity and

reliability. The use of an external

bias resistor for temperature and

current stability also allows bias

flexibility.

• Unconditionally Stable

(k>1)

Note:

1. Short leaded 36 package available

upon request.

• Cost Effective Ceramic

Microstrip Package

Description

The MSA-0435 is a high perfor-

mance silicon bipolar Monolithic

Microwave Integrated Circuit

(MMIC) housed in a cost effective,

microstrip package. This MMIC is

Available in cut lead version

(package36)asMSA-0436.

Typical Biasing Configuration

bias

V_CC> 7 V

RFC (Optional)

block

MSA

OUT

= 5.25 V

5965-9575E

6-330

MSA-0435, -0436 Absolute Maximum Ratings

Thermal Resistance^[2,5]

Parameter

AbsoluteMaximum^[1]

θ_jc=140°C/W

Device Current

Power Dissipation^[2,3]

RF Input Power

Junction Temperature

Storage Temperature^[4]

100mA

650mW

+13dBm

200°C

–65to200°C

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. T_CASE=25°C.

3. Derate at 7.1 mW/°C for T_C> 109°C.

4. Storage above +150°C may tarnish the leads of this package making it

difficult to solder into a circuit.

5. The small spot size of this technique results in a higher, though more

accurate determination of q_jcthan do alternate methods. See MEASURE-

MENTS section “Thermal Resistance” for more information.

Electrical Specifications^[1], T_A= 25°C

Symbol

Parameters and Test Conditions: I_d= 50 mA, Z_O= 50 Ω

Units Min. Typ. Max.

G_P

PowerGain(|S₂₁|²)

f=0.1GHz

7.5

8.5

± 0.6

3.8

9.5

∆G_P

f_{3 dB}

Gain Flatness

f=0.1to2.5GHz

± 1.0

3 dB Bandwidth

GHz

Input VSWR

f=0.1to2.5GHz

f=1.0GHz

1.4:1

1.9:1

6.5

VSWR

Output VSWR

50 Ω Noise Figure

dBm

psec

P_{1 dB}

IP₃

Output Power at 1 dB Gain Compression

Third Order Intercept Point

Group Delay

f=1.0GHz

12.5

25.5

125

f=1.0GHz

t_D

f=1.0GHz

V_d

Device Voltage

4.75

5.25

–8.0

5.75

dV/dT

Device Voltage Temperature Coefficient

mV/°C

Note:

1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current

is on the following page.

Part Number Ordering Information

Part Number

No. of Devices

Container

MSA-0435

MSA-0436-BLK

MSA-0436-TR1

100

1000

Strip

Antistatic Bag

7" Reel

For more information, see “Tape and Reel Packaging for Semiconductor Devices”.

6-331

MSA-0435, -0436 Typical Scattering Parameters (Z_O= 50 Ω, T_A= 25°C, I_d= 50 mA)

S₁₁

S₂₁

S₁₂

S₂₂

Freq.

GHz

Mag

Ang

Mag

Ang

Mag

Ang

Mag

Ang

0.1

0.2

0.4

0.6

0.8

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

.08

.07

.05

.04

.09

.14

.22

.28

.34

.37

.42

175

172

8.5

8.4

8.3

8.1

7.8

7.3

6.6

5.8

4.8

3.9

3.0

2.67

2.68

2.67

2.66

2.64

2.61

2.55

2.46

2.33

2.14

1.94

1.74

1.57

1.41

175

170

161

151

142

136

109

–16.4

–16.3

–16.4

–16.2

–16.1

–16.0

–15.0

–14.2

–13.1

–12.5

–11.7

–11.3

–10.7

–10.4

.151

.153

.151

.155

.156

.159

.178

.196

.221

.238

.260

.271

.291

.302

.20

.21

.22

.24

.26

.28

.31

.33

.35

.34

.33

.32

–10

–16

171

–33

166

–45

169

–57

175

–2

–8

–68

–142

–145

–154

–175

170

–96

–123

–140

–160

–173

–179

–171

–160

156

140

–1

120

–16

A model for this device is available in the DEVICE MODELS section.

Typical Performance, T_A= 25°C

(unless otherwise noted)

= +125°C

= +25°C

= –55°C

Gain Flat to DC

0.1 GHz

1.0 GHz

2.0 GHz

0.1

0.3 0.5

1.0

3.0 6.0

(mA)

FREQUENCY (GHz)

(V)

Figure 1. Typical Power Gain vs.

Frequency, T_A= 25°C, I_d= 50 mA.

Figure 2. Device Current vs. Voltage.

Figure 3. Power Gain vs. Current.

7.5

7.0

1 dB

= 70 mA

6.5

6.0

= 50 mA

= 30 mA

= 50 mA

= 70 mA

0.1

5.5

0.2 0.3 0.5

1.0

2.0

4.0

0.1

0.2 0.3 0.5

1.0

2.0

–55 –25

+25

+85

+125

FREQUENCY (GHz)

TEMPERATURE, (°C)

Figure 5. Output Power at 1 dB Gain

Compression vs. Frequency.

Figure 6. Noise Figure vs. Frequency.

Figure 4. Output Power at 1 dB Gain

Compression, NF and Power Gain vs.

Case Temperature, f = 1.0 GHz,

I_d=50mA.

6-332

35 micro-X Package Dimensions

GROUND

.085

2.15

.083

2.11

DIA.

RF OUTPUT

AND BIAS

RF INPUT

.020

.508

GROUND

Notes:

(unless otherwise specified)

1. Dimensions are

2. Tolerances

.057 ± .010

1.45 ± .25

.100

2.54

in .xxx = ± 0.005

mm .xx = ± 0.13

.022

.56

.455 ± .030

11.54 ± .75

.006 ± .002

.15 ± .05

6-333

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