MSA-0886-TR2 [AGILENT]

Wide Band Low Power Amplifier, BIPolar,;
MSA-0886-TR2
元器件型号: MSA-0886-TR2
生产厂家: AGILENT TECHNOLOGIES, LTD.    AGILENT TECHNOLOGIES, LTD.
描述和应用:

Wide Band Low Power Amplifier, BIPolar,

射频微波
PDF文件: 总4页 (文件大小:71K)
下载文档:  下载PDF数据表文档文件
型号参数:MSA-0886-TR2参数
是否Rohs认证 不符合
生命周期Obsolete
包装说明SL,4GW-LD,.085CIR
Reach Compliance Codeunknown
风险等级5.05
特性阻抗50 Ω
构造COMPONENT
最大输入功率 (CW)13 dBm
安装特点SURFACE MOUNT
端子数量4
封装主体材料PLASTIC/EPOXY
封装等效代码SL,4GW-LD,.085CIR
电源7.8 V
射频/微波设备类型WIDE BAND LOW POWER
子类别RF/Microwave Amplifiers
最大压摆率36 mA
表面贴装YES
技术BIPOLAR
最大电压驻波比1.9
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
Agilent MSA-0886
Cascadable Silicon Bipolar
MMIC Amplifier
Data Sheet
Features
• Lead-free Option Available
• Usable Gain to 5.5 GHz
• High Gain:
32.5 dB Typical at 0.1 GHz
22.5 dB Typical at 1.0 GHz
• Low Noise Figure:
3.3 dB Typical at 1.0 GHz
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available
• Lead-free Option Available
Description
The MSA-0886 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a
general purpose 50
gain block
above 0.5 GHz and can be used as
a high gain transistor below this
frequency. Typical applications
include narrow and moderate band
IF and RF amplifiers in commer-
cial and industrial applications.
The MSA-series is fabricated using
Agilent’s 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent perfor-
mance, uniformity and reliability.
The use of an external bias resistor
for temperature and current
stability also allows bias flexibility.
86 Plastic Package
Typical Biasing Configuration
R
bias
V
CC
>
10
V
RFC (Optional)
4
C
block
3
IN
1
MSA
C
block
OUT
V
d
= 7.8 V
2
2
MSA-0886 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
65 mA
500 mW
+13 dBm
150°C
–65°C to 150°C
Thermal Resistance
[2]
:
θ
jc
= 140°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 7.1 mW/°C for T
C
> 80°C.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
Parameters and Test Conditions: I
d
= 36 mA, Z
O
= 50
Power Gain (|S
21
|
2
)
Input VSWR
Output VSWR
50
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 0.1 GHz
f = 1.0 GHz
f = 0.1 to 3.0 GHz
f = 0.1 to 3.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
Units
dB
Min.
20.5
Typ.
32.5
22.5
2.1:1
1.9:1
Max.
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
dB
dBm
dBm
psec
V
mV/°C
6.2
3.3
12.5
27.0
140
7.8
–17.0
9.4
Note:
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current
is on the following page.
Ordering Information
Part Numbers
MSA-0886-BLK
MSA-0886-BLKG
MSA-0886-TR1
MSA-0886-TR1G
MSA-0886-TR2
MSA-0886-TR2G
No. of Devices
100
100
1000
1000
4000
4000
Comments
Bulk
Bulk
7" Reel
7" Reel
13" Reel
13" Reel
Note:
Order part number with a “G” suffix if lead-free option
is desired.
3
MSA-0886 Typical Scattering Parameters
[1]
(Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 36 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
k
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
.63
.56
.43
.35
.30
.27
.27
.31
.35
.40
.45
.51
.61
.68
–22
–41
–69
–88
–104
–116
–144
–166
178
162
149
137
116
100
32.5
31.3
28.6
26.4
24.2
22.4
19.2
16.7
14.8
12.9
11.4
9.9
7.3
4.6
42.12
36.68
26.94
20.89
16.21
13.20
9.15
6.84
5.50
4.41
3.72
3.14
2.31
1.69
160
143
119
104
93
83
65
49
38
25
13
1
–22
–42
–36.7
–33.9
–29.1
–27.0
–25.3
–24.2
–21.6
–19.5
–17.9
–17.4
–16.8
–16.1
–15.7
–15.2
.015
.020
.035
.045
.054
.062
.083
.105
.128
.135
.145
.157
.164
.173
54
50
52
49
50
49
46
41
36
30
25
19
10
4
.62
.55
.43
.34
.29
.26
.23
.22
.21
.20
.19
.18
.17
.23
–24
–46
–79
–103
–124
–139
–172
163
149
132
124
121
130
143
0.68
0.64
0.69
0.77
0.83
0.87
0.93
0.96
0.96
1.01
1.02
1.01
1.00
0.95
Typical Performance, T
A
= 25°C
(unless otherwise noted)
35
30
25
G
p
(dB)
30
I
d
= 36 mA
I
d
(mA)
T
C
= +85°C
T
C
= +25°C
T
C
= –25°C
Gp (dB)
40
23
22
21
G
P
13
P
1 dB
(dBm)
20
15
10
5
Gain Flat to DC
0
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
I
d
= 20 mA
20
P
1 dB
12
11
NF (dB)
10
4
3
2
NF
0
0
2
4
6
V
d
(V)
8
10
–25
0
+25
+55
+85
TEMPERATURE (°C)
Figure 1. Typical Power Gain vs.
Frequency, I
d
= 36 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
d
= 36 mA.
16
I
d
= 40 mA
14
12
10
8
I
d
= 36 mA
NF (dB)
4.5
I
d
= 20 mA
I
d
= 36 mA
I
d
= 40 mA
4.0
P
1 dB
(dBm)
3.5
3.0
6
I
d
= 20 mA
2.5
0.2 0.3
0.5
1.0
2.0
4.0
0.1
0.2 0.3
0.5
1.0
2.0
FREQUENCY (GHz)
FREQUENCY (GHz)
4
0.1
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 5. Noise Figure vs. Frequency.
86 Plastic Package Dimensions
0.51
±
0.13
(0.020
±
0.005)
GROUND
4
RF INPUT
1
A08
45°
RF OUTPUT
AND DC BIAS
C
L
3
2.34
±
0.38
(0.092
±
0.015)
2
GROUND
2.67
±
0.38
(0.105
±
0.15)
1.52
±
0.25
(0.060
±
0.010)
5° TYP.
0.203
±
0.051
(0.006
±
0.002)
0.66
±
0.013
(0.026
±
0.005)
0.30 MIN
(0.012 MIN)
8° MAX
0° MIN
2.16
±
0.13
(0.085
±
0.005)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788-6763
Europe: +49 (0) 6441 92460
China: 10800 650 0017
Hong Kong: (65) 6756 2394
India, Australia, New Zealand: (65) 6755 1939
Japan: (+81 3) 3335-8152(Domestic/International), or
0120-61-1280(Domestic Only)
Korea: (65) 6755 1989
Singapore, Malaysia, Vietnam, Thailand, Philippines,
Indonesia: (65) 6755 2044
Taiwan: (65) 6755 1843
Data subject to change.
Copyright © 2005 Agilent Technologies, Inc.
Obsoletes 5989-2083EN
April 8, 2005
5989-2744EN
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