A93C66TMX8VR [AITSEMI]
THREE-WIRE SERIAL EEPROM;
| 型号： | A93C66TMX8VR |
| 厂家： | 
AiT Semiconductor |
| 描述： | THREE-WIRE SERIAL EEPROM 可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 |
| 文件： | 总14页 (文件大小：776K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A93C66
AiT Semiconductor Inc.
www.ait-ic.com
THREE-WIRE SERIAL EEPROM
4K (512 X 8 OR 256 X 16)
DESCRIPTION
FEATURES
The A93C66 provides 4096 bits of serial electrically
erasable programmable read only memory
(EEPROM) organized as 256 words of 16 bits each,
when the ORG pin is connected to VCC and 512
words of 8 bits each when it is tied to ground.
Three-wire Serial Interface
CC = 1.8V to 5.5V
V
Sequential Read Operation
2 MHz Clock Rate (5V) Compatibility
Self-timed Write Cycle (5 ms max)
1 Million Write Cycles guaranteed
Data Retention > 100 Years
The A93C66 is enabled through the Chip Select pin
(CS), and accessed via a 3-wire serial interface
consisting of Data Input (DI), Data Output (DO), and
Shift Clock (SK). Upon receiving a Read instruction
at DI, the address is decoded and the data is clocked
out serially on the data output pin DO. The WRITE
cycle is completely self-timed and no separate erase
cycle is required before write. The Write cycle is only
enabled when it is in the Erase/Write Enable state.
When CS is brought “high” following the initiation of a
write cycle, the DO pin outputs the Ready/Busy
status.
Available in SOP8 and TSSOP8 Package
ORDERING INFORMATION
Package Type Part Number
A93C66M8R
A93C66M8U
SOP8
M8
A93C66M8VR
A93C66M8VU
A93C66TMX8R
A93C66TMX8U
A93C66TMX8VR
A93C66TMX8VU
TSSOP8
Note
TMX8
The A93C66 is available in SOP8 and TSSOP8
Package.
R: Tape & Reel
U: Tube
V: Halogen free Package
AiT provides all RoHS products
suffix “ V “ means Halogen free Package
REV1.0
- MAY 2012 RELEASED -
- 1 -
A93C66
AiT Semiconductor Inc.
www.ait-ic.com
THREE-WIRE SERIAL EEPROM
4K (512 X 8 OR 256 X 16)
PIN DESCRIPTION
Top View
Top View
Pin #
Symbol
Functions
SOP8
TSSOP8
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
CS
SK
Chip Select
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
DI
DO
GND
ORG
DC
Internal Organization
Don’t Connect
Power Supply
VCC
REV1.0
- MAY 2012 RELEASED -
- 2 -
A93C66
AiT Semiconductor Inc.
www.ait-ic.com
THREE-WIRE SERIAL EEPROM
4K (512 X 8 OR 256 X 16)
ABSOLUTE MAXIMUM RATINGS
DC Supply Voltage
-0.3V ~ +6.5V
GND-0.3V ~ VCC +0.3V
-40℃ ~ +85℃
Input/ Output Voltage
Operating Ambient Temperature
Storage Temperature
-65℃ ~ +150℃
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to this device. These are stress ratings
only. Functional operation of this device at these or any other conditions above those indicated in the operational sections of this
specification is not implied or intended. Exposure to the absolute maximum rating conditions for extended periods may affect device
reliability.
PIN CAPACITANCE
TA=25℃, f=1.0MHz, VCC=+1.8V (Unless otherwise specified)
PARAMETER
Output Capacitance (DO)
Input Capacitance (CS, SK, DI)
SYMBOL
COUT
MAX
UNIT
pF
CONDITION
VOUT=0V
VIN=0V
5
5
CIN
pF
REV1.0
- MAY 2012 RELEASED -
- 3 -
A93C66
AiT Semiconductor Inc.
www.ait-ic.com
THREE-WIRE SERIAL EEPROM
4K (512 X 8 OR 256 X 16)
DC ELECTRICAL CHARACTERISTICS
TA=-40℃ to +85℃, VCC=+1.8V to +5.5V (Unless otherwise specified)
Symbo
Parameter
Supply Voltage
Supply Voltage
Supply Voltage
Condition
MIN
TYP
MAX
5.5
Unit
V
VCC1
VCC2
VCC3
1.8
-
2.7
-
-
5.5
V
4.5
5.5
V
Read at 1.0MHz
Write at 1.0MHz
-
0.2
0.9
-
2.0
Supply Current
Standby Current
ICC
VCC=5.0V
VCC=1.8V
mA
μA
-
3.0
ISB1
ISB2
ISB3
IIL
-
1.0
Standby Current
VCC=2.7V,
CS=0V
-
-
1.0
Standby Current
VCC=5.0V
-
-
-
1.0
Input Leakage NOTE1
Input Leakage NOTE2
Output Leakage
VIN=0V to VCC
VIN=0V to VCC
VIN=0V to VCC
0.1
2.0
0.1
-
1.0
μA
μA
uA
IIL
-
3.0
IOL
-
1.0
Input Low VoltageNOTE3
Input High VoltageNOTE3
Input Low VoltageNOTE3
Input High VoltageNOTE3
VIL1
VIH1
VIL2
-0.3
2.0
-0.5
0.8
2.7V ≤ VCC ≤ 5.5V
1.8V ≤ VCC ≤ 2.7V
V
V
-
VCC+0.3
VCC+0.3
-
VIH2
VOL1
VOH1
VOL2
VOH2
VCCx0.7
-
-
-
-
-
VCC+0.3
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
I
OL = 2.1mA
OH = -0.4mA
-
2.4
0.4
-
2.7V ≤ VCC ≤ 5.5V
1.8V ≤ VCC ≤ 2.7V
V
V
I
IOL=0.15mA
IOH=-100uA
-
0.2
-
VCC-0.2
NOTE1: DI、CS、SK input pin
NOTE2: ORG input pin
NOTE3: VIL min and VIH max are reference only and are not tested.
REV1.0
- MAY 2012 RELEASED -
- 4 -
A93C66
AiT Semiconductor Inc.
www.ait-ic.com
THREE-WIRE SERIAL EEPROM
4K (512 X 8 OR 256 X 16)
AC ELECTRICAL CHARACTERISTICS
TA=-40℃ to +85℃, VCC=+1.8V to +5.5V, CL=1 TTL Gate and 100pF, unless otherwise specified.
Parameter
Symbol
Condition
MIN
TYP
MAX
Unit
1.8V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
4.5V ≤ VCC ≤ 5.5V
1.8V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
4.5V ≤ VCC ≤ 5.5V
1.8V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
0
0
0
1000
250
250
1000
250
-
-
-
-
-
-
-
-
0.25
SK Clock Frequency
fSK
MHz
1
2
-
SK High Time
tSKH
tSKL
tCS
ns
ns
ns
-
-
-
-
SK Low Time
4.5V ≤ VCC ≤ 5.5V
250
-
-
1.8V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
4.5V ≤ VCC ≤ 5.5V
1000
250
250
-
-
-
-
-
-
Minimum CS Low Time
Relative to SK
1.8V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
4.5V ≤ VCC ≤ 5.5V
200
50
50
-
-
-
-
-
-
CS Setup Time
tCSS
ns
Relative to SK
1.8V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
4.5V ≤ VCC ≤ 5.5V
400
100
100
0
-
-
-
-
-
-
-
-
DI Setup Time
CS Hold Time
DI Hold Time
tDIS
tCSH
tDIH
ns
ns
Relative to SK
Relative to SK
1.8V ≤ VCC ≤ 5.5V
400
100
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.7V ≤ VCC ≤ 5.5V
4.5V ≤ VCC ≤ 5.5V
1.8V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
4.5V ≤ VCC ≤ 5.5V
1.8V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
4.5V ≤ VCC ≤ 5.5V
ns
ns
ns
1000
250
250
1000
250
250
AC
Output Delay to “1”
Output Delay to “0”
tPD1
Test
AC
tPD0
Test
1.8V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
4.5V ≤ VCC ≤ 5.5V
-
-
-
-
-
-
1000
250
250
AC
Test
CS to Status Valid
tSV
ns
AC Test CS = VIL
1.8V ≤ VCC ≤ 5.5V
-
-
-
-
-
-
400
100
100
5
CS to DO in High
Impedance
tDF
2.7V ≤ VCC ≤ 5.5V
4.5V ≤ VCC ≤ 5.5V
ns
-
Write Cycle Time
tWP
1.5
ms
Write
Cycles
5.0V, 25℃
Endurance
1M
-
-
REV1.0
- MAY 2012 RELEASED -
- 5 -
A93C66
AiT Semiconductor Inc.
www.ait-ic.com
THREE-WIRE SERIAL EEPROM
4K (512 X 8 OR 256 X 16)
BLOCK DIAGRAM
When the ORG pin is connected to VCC, the “x16” organization is selected. When it is connected to ground,
the “x8” organization is selected. If the ORG pin is left unconnected and the application does not load the
input beyond the capability of the internal 1 Meg ohm pull-up, then “x16“organization is selected.
REV1.0
- MAY 2012 RELEASED -
- 6 -
A93C66
AiT Semiconductor Inc.
www.ait-ic.com
THREE-WIRE SERIAL EEPROM
4K (512 X 8 OR 256 X 16)
DETAILED INFORMATION
The A93C66 is accessed via a simple and versatile three-wire serial communication interface. Device
operation is controlled by seven instructions issued by the host processor. A valid instruction starts with a
rising edge of CS and consists of a start bit (logic“1”) followed by the appropriate OP Code and the desired
memory address location.
Instruction Set of A93C66
Address
Data
OP
Instruction
SB
Comments
Code
x8
x16
x8
x16
Reads data stored in memory,
at specified address
Write enable must precede all
programming modes
READ
EWEN
1
1
10
00
A8 - A0
A7 - A0
11XXXXXXX 11XXXXXX
Erase memory location An - A0
ERASE
WRITE
1
1
11
01
A8 - A0
A8 - A0
A7 - A0
A7 - A0
Writes memory location An - A0
D7 - D0 D15 - D0
Erases all memory locations.
Valid only at VCC = 4.5V to 5.5V
Writes all memory locations.
Valid only at VCC = 4.5V to 5.5V
Disables all programming
instructions
ERAL
WRAL
EWDS
1
1
1
00
00
00
10XXXXXXX 10XXXXXX
01XXXXXXX 01XXXXXX D7 - D0 D15 - D0
00XXXXXXX 00XXXXXX
The X’s in the address field represent don’t care values and must be clocked.
READ (READ)
The Read (READ) instruction contains the address code for the memory location to be read. After the
instruction and address are decoded, data from the selected memory location is available at the serial output
pin DO. Output data changes are synchronized with the rising edges of serial clock SK. It should be noted that
a dummy bit (logic “0”) precedes the 8- or 16-bit data output string. The A93C66 supports sequential read
operations. The device will automatically increment the internal address pointer and clock out the next
memory location as long as Chip Select (CS) is held high .In this case, the dummy bit (logic “0”) will not be
clocked out between memory locations, thus allowing for a continuous steam of data to be read.
ERASE/WRITE (EWEN):
To assure data integrity, the part automatically goes into the Erase/Write Disable (EWDS) state when power
is first applied. An Erase/Write Enable (EWEN) instruction must be executed first before any programming
instructions can be carried out. Please note that once in the EWEN state, programming remains enabled until
an EWDS instruction is executed or VCC power is removed from the part.
REV1.0
- MAY 2012 RELEASED -
- 7 -
A93C66
AiT Semiconductor Inc.
www.ait-ic.com
THREE-WIRE SERIAL EEPROM
4K (512 X 8 OR 256 X 16)
ERASE (ERASE)
The Erase (ERASE) instruction programs all bits in the specified memory location to the logical “1”state. The
self-timed erase cycle starts once the ERASE instruction and address are decoded. The DO pin outputs the
Ready/Busy status of the part if CS is brought high after being kept low for a minimum of 250ns (TCS). A logic
“1” at pin DO indicates that the selected memory location has been erased, and the part is ready for another
instruction.
WRITE (WRITE)
The Write (WRITE) instruction contains the 8 or 16 bits of data to be written into the specified memory location.
The self-timed programming cycle, tWP, starts after the last bit of data is received at serial data input pin DI.
The DO pin outputs the Ready/Busy status of the part if CS is brought high after being kept low for a minimum
of 250ns (TCS). A logic “0” at DO indicates that programming is still in progress. A logic “1” indicates that the
memory location at the specified address has been written with the data pattern contained in the instruction
and the part is ready for further instructions. A Ready/Busy status cannot be obtained if the CS is brought high
after the end of the self timed programming cycle, TWP.
ERASE ALL (ERAL)
The Erase All (ERAL) instruction programs every bit in the memory array to the logic “1” state and is primarily
used for testing purposes. The DO pin outputs the Ready/Busy status of the part if CS is brought high after
being kept low for a minimum of 250ns (TCS). The ERAL instruction is valid only at VCC = 5.0V ± 10%.
WRITE ALL (WRAL)
The Write All (WRAL) instruction programs all memory locations with the data patterns specified in the
instruction. The DO pin outputs the Ready/Busy status of the part if CS is brought high after being kept low for
a minimum of 250ns (TCS). The WRAL instruction is valid only at VCC = 5.0V ± 10%.
ERASE/WRITE DISABLE (EWDS)
To protect against accidental data disturb, the Erase/Write Disable (EWDS) instruction disables all
programming modes and should be executed after all programming operations. The operation of the Read
instruction is independent of both the EWEN and EWDS instructions and can be executed at any time.
REV1.0
- MAY 2012 RELEASED -
- 8 -
A93C66
AiT Semiconductor Inc.
www.ait-ic.com
THREE-WIRE SERIAL EEPROM
4K (512 X 8 OR 256 X 16)
TIMING DIAGRAMS
Fig1. Synchronous Data Timing
Organization Key for Timing Diagrams
A93C66(4K)
I/O
X 8
A8
D7
X 16
A7
AN
DN
D15
Fig2. READ Timing
REV1.0
- MAY 2012 RELEASED -
- 9 -
A93C66
AiT Semiconductor Inc.
www.ait-ic.com
THREE-WIRE SERIAL EEPROM
4K (512 X 8 OR 256 X 16)
Fig3. EWEN Timing
Fig4. EWDS Timing
Fig5. WRITE Timing
REV1.0
- MAY 2012 RELEASED -
- 10 -
A93C66
AiT Semiconductor Inc.
www.ait-ic.com
THREE-WIRE SERIAL EEPROM
4K (512 X 8 OR 256 X 16)
Fig6. WRAL Timing (Valid only at VCC=4.5V to 5.5V)
Fig7. ERASE Timing
Fig8. ERAL Timing (Valid only at VCC=4.5V to 5.5V)
REV1.0
- MAY 2012 RELEASED -
- 11 -
A93C66
AiT Semiconductor Inc.
www.ait-ic.com
THREE-WIRE SERIAL EEPROM
4K (512 X 8 OR 256 X 16)
PACKAGE INFORMATION
Dimension in SOP8 (Unit: mm)
Symbol
Min
-
Max
A
A1
A2
b
1.770
0.280
1.770
0.530
0.260
5.100
4.100
6.200
0.080
-
0.440
0.210
4.700
3.700
5.800
c
D
E
E1
e
1.270(BSC)
L
0.400
0°
1.270
8°
θ
REV1.0
- MAY 2012 RELEASED -
- 12 -
A93C66
AiT Semiconductor Inc.
www.ait-ic.com
THREE-WIRE SERIAL EEPROM
4K (512 X 8 OR 256 X 16)
Dimension in TSSOP8 (Unit: mm)
Symbol
Min
2.830
4.300
0.200
0.090
6.200
-
Max
D
E
3.030
4.500
0.280
0.200
6.600
1.200
1.050
0.150
b
c
E1
A
A2
A1
e
0.900
0.050
0.65 (BSC)
0.25(TYP)
L
0.450
0°
0.750
8°
H
θ
REV1.0
- MAY 2012 RELEASED -
- 13 -
A93C66
AiT Semiconductor Inc.
www.ait-ic.com
THREE-WIRE SERIAL EEPROM
4K (512 X 8 OR 256 X 16)
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer. As used herein may involve
potential risks of death, personal injury, or serve property, or environmental damage. In order to minimize
risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support.
AiT warrants the performance of its products of the specifications applicable at the time of sale.
REV1.0
- MAY 2012 RELEASED -
- 14 -
相关型号：
A94-BP
Small Signal Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3
MCC
©2020 ICPDF网 联系我们和版权申明