AG2101M8VR [AITSEMI]

MOSFET/IGBT GATE DRIVER;
AG2101M8VR
型号: AG2101M8VR
厂家: AiT Semiconductor    AiT Semiconductor
描述:

MOSFET/IGBT GATE DRIVER

栅极驱动 双极性晶体管
文件: 总8页 (文件大小:585K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
AG2101  
AiT Semiconductor Inc.  
www.ait-ic.com  
MOSFET/IGBT GATE DRIVER  
HIGH AND LOW SIDE DRIVER  
DESCRIPTION  
FEATURES  
The AG2101 is a high voltage, high speed power  
MOSFET and IGBT driver based on P_SUB P_EPI  
process. The floating channel driver can be used to  
drive two N-channel power MOSFET or IGBT  
independently which operates up to 600V. Logic  
inputs are compatible with standard CMOS or LSTTL  
output, down to 3.3V logic. The output drivers feature  
a high pulse current buffer stage designed for  
minimum driver cross-conduction. Propagation delays  
are matched to simplify use in high frequency  
applications.  
Fully operational to +600V  
3.3V logic compatible  
dV/dt Immunity ±50V/nsec  
Floating channel designed for bootstrap  
operation  
Gate drive supply range from 10V to 20V  
UVLO for both channels  
Output Source / Sink Current Capability 300mA  
/600mA  
Independent Logic Inputs to Accommodate All  
Topologies  
-5V negative Vs ability  
AG2101 is available in a SOP8 package.  
Matched propagation delay for both channels  
Available in a SOP8 package.  
ORDERING INFORMATION  
APPLICATION  
Small and medium- power motor driver  
Power MOSFET or IGBT driver  
Package Type  
Part Number  
AG2101M8R  
AG2101M8VR  
SOP8  
M8  
SPQ: 4,000pcs/Reel  
V: Halogen free Package  
R: Tape & Reel  
Note  
AiT provides all RoHS products  
TYPICAL APPLICATION CIRCUIT  
REV1.0  
- NOV 2017 RELEASED -  
- 1 -  
AG2101  
AiT Semiconductor Inc.  
www.ait-ic.com  
MOSFET/IGBT GATE DRIVER  
HIGH AND LOW SIDE DRIVER  
PIN DESCRIPTION  
Top View  
Symbol  
VCC  
HIN  
LIN  
Function  
Low side and main power supply  
Pin #  
1
2
3
4
5
6
7
8
Logic input for high side gate driver output (HO)  
Logic input for low side gate driver output (LO)  
Ground  
COM  
LO  
Low side gate drive output, in phase with LIN  
High side floating supply return or bootstrap return  
High side gate drive output, in phase with HIN  
High side floating supply  
VS  
HO  
VB  
REV1.0  
- NOV 2017 RELEASED -  
- 2 -  
AG2101  
AiT Semiconductor Inc.  
www.ait-ic.com  
MOSFET/IGBT GATE DRIVER  
HIGH AND LOW SIDE DRIVER  
ABSOLUTE MAXIMUM RATINGS  
VB, High Side Floating Supply  
-0.3V ~ 625V  
VB -25V ~ VB +0.3V  
VS -0.3V ~ VB +0.3V  
-0.3V ~ 25V  
-0.3V ~ VCC +0.3V  
-0.3V ~ VCC +0.3V  
50V/ns  
VS, High Side Floating Supply Return  
VHO, High Side Gate Drive Output  
VCC, Low Side and Main Power Supply  
VLO, Low Side Gate Drive Output  
VIN, Logic Input of HIN & LIN  
dVS/dt, Allowable Offset Supply Voltage Transient  
ESD, HBM Model  
2.5kV  
ESD, Machine Model  
200V  
PD, Package Power Dissipation @ TA 25°C  
RthJA, Thermal Resistance Junction to Ambient  
TJ, Junction Temperature  
SOP8  
SOP8  
0.625W  
200/W  
150℃  
TS, Storage Temperature  
-55~150℃  
300℃  
TL, Lead Temperature (Soldering, 10 seconds)  
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and  
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not  
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.  
RECOMMENDED OPERATING CONDITIONS  
Parameter  
High Side Floating Supply  
Symbol  
VB  
Min.  
Max.  
Units  
V
VS +10  
VS +20  
High Side Floating Supply Return  
High Side Gate Drive Output Voltage  
Low Side Supply  
VS  
VHO  
VCC  
VLO  
VIN  
TA  
-
VS  
10  
0
600  
VB  
V
V
20  
V
Low Side Gate Drive Output Voltage  
Logic Input Voltage(HIN & LIN)  
Ambient Temperature  
VCC  
VCC  
125  
V
0
V
-40  
REV1.0  
- NOV 2017 RELEASED -  
- 3 -  
AG2101  
AiT Semiconductor Inc.  
www.ait-ic.com  
MOSFET/IGBT GATE DRIVER  
HIGH AND LOW SIDE DRIVER  
ELECTRICAL CHARACTERISTICS  
VBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25°C, unless otherwise specified.  
Parameter  
Symbol  
Conditions  
Min  
Typ.  
Max  
Units  
ns  
Dynamic Electrical Characteristics  
High Side Turn-On Propagation Delay  
High Side Turn-Off Propagation Delay  
Low Side Turn-On Propagation Delay  
Low Side Turn-Off Propagation Delay  
Delay Matching  
tonH  
toffH  
tonL  
toffL  
MT  
tr  
-
-
-
-
-
-
-
160  
150  
160  
150  
20  
220  
220  
220  
220  
50  
Turn-On Rise Time  
90  
170  
90  
Turn-Off Fall Time  
tf  
40  
Static Electrical Characteristics  
Logic 1(HIN & LIN) Input Voltage  
Logic 0(HIN & LIN) Input Voltage  
High Level Output Voltage, VBIAS - VO  
VIH  
VIL  
2.5  
-
-
-
-
-
-
0.8  
0.3  
V
VOH  
Low Level Output Voltage, VO  
Quiescent VCC Supply Current  
Quiescent VB Supply Current  
Leakage Current from VS(600V) to GND  
Logic 1Input Bias Current  
Logic 0Input Bias Current  
VOL  
IQCC  
IQBS  
ILK  
-
-
-
-
-
-
-
-
-
-
-
150  
30  
-
0.3  
270  
55  
50  
10  
1
IIN+  
IIN-  
6
μA  
VCCU  
+
8.7  
8
-
VCC Supply UVLO Threshold  
VCCU  
IO+  
-
-
Output High Short Circuit Pulsed Current  
Output Low Short Circuit Pulsed Current  
300  
600  
-
mA  
IO-  
-
REV1.0  
- NOV 2017 RELEASED -  
- 4 -  
AG2101  
AiT Semiconductor Inc.  
www.ait-ic.com  
MOSFET/IGBT GATE DRIVER  
HIGH AND LOW SIDE DRIVER  
BLOCK DIAGRAM  
REV1.0  
- NOV 2017 RELEASED -  
- 5 -  
AG2101  
AiT Semiconductor Inc.  
www.ait-ic.com  
MOSFET/IGBT GATE DRIVER  
HIGH AND LOW SIDE DRIVER  
DETAILED INFORMATION  
1. Logic Function  
2. Timing Spec  
REV1.0  
- NOV 2017 RELEASED -  
- 6 -  
AG2101  
AiT Semiconductor Inc.  
www.ait-ic.com  
MOSFET/IGBT GATE DRIVER  
HIGH AND LOW SIDE DRIVER  
PACKAGE INFORMATION  
Dimension in SOP8 (Unit: mm)  
Symbol  
A
Min.  
1.499  
0.102  
1.397  
Max.  
1.750  
0.249  
-
A1  
A2  
b
0.406TYP  
0.2TYP  
c
D
E
E1  
e
4.852  
5.852  
3.877  
4.952  
6.198  
3.997  
1.27TYP  
h
-
-
h1  
L
0.254  
0.406  
0.457  
0.889  
θ1  
θ2  
θ3  
θ4  
12°TYP  
12°TYP  
0°  
8°  
45  
REV1.0  
- NOV 2017 RELEASED -  
- 7 -  
AG2101  
AiT Semiconductor Inc.  
www.ait-ic.com  
MOSFET/IGBT GATE DRIVER  
HIGH AND LOW SIDE DRIVER  
IMPORTANT NOTICE  
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to  
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the  
latest version of relevant information to verify, before placing orders, that the information being relied on is  
current.  
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to  
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT  
products in such applications is understood to be fully at the risk of the customer. As used herein may involve  
potential risks of death, personal injury, or server property, or environmental damage. In order to minimize  
risks associated with the customer's applications, the customer should provide adequate design and  
operating safeguards.  
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT  
warrants the performance of its products of the specifications applicable at the time of sale.  
REV1.0  
- NOV 2017 RELEASED -  
- 8 -  

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