AM1012 [AITSEMI]
N-CHANNEL 1.8-V (G-S) MOSFET;
| 型号： | AM1012 |
| 厂家： | 
AiT Semiconductor |
| 描述： | N-CHANNEL 1.8-V (G-S) MOSFET |
| 文件： | 总9页 (文件大小：600K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM1012
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL 1.8-V (G-S) MOSFET
DESCRIPTION
FEATURES
®
The AM1012 is available in SC-89 Package
TrenchFET Power MOSFET: 1.8-V Rated
Gate-Source ESD Protected: 2000V
High-Side Switching
Low On-Resistance: 0.7Ω
Low Threshold: 0.8V (typ)
ORDERING INFORMATION
Fast Switching Speed: 10ns
Available in SC-89 Package
Package Type
SC-89
Part Number
BENEFITS
AM1012CK3R
AM1012CK3VR
CK3
Ease in Driving Switches
V: Halogen free Package
R: Tape & Reel
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Note
AiT provides all RoHS products
Suffix “ V “ means Halogen free Package
Low Battery Voltage Operation
PIN DESCRIPTION
APPLICATION
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
REV1.0
- SEP 2015 RELEASED -
- 1 -
AM1012
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL 1.8-V (G-S) MOSFET
PIN DESCRIPTION
Top View
Pin #
Symbol
Function
1
2
3
G
S
D
Gate
Source
Drain
REV1.0
- SEP 2015 RELEASED -
- 2 -
AM1012
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL 1.8-V (G-S) MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25℃, unless Otherwise Noted
Parameter
5 secs
Steady State Unit
Symbol
VDS
Drain-Source Voltage
20
V
Gate-Source Voltage
VGS
±6
V
TA=25°C
TA=85°C
600
400
500
Continuous Drain Current (TJ = 150°C)NOTE2
ID
350
mA
Pulsed Drain Current NOTE1
IDM
IS
1000
Continuous Source Current (diode conduction)NOTE2
275
175
90
250
150
80
TA=25°C
Maximum Power DissipationNOTE2 for SC-75
Maximum Power DissipationNOTE2 for SC-89
PD
PD
TA=85°C
TA=25°C
TA=85°C
mW
272
160
250
140
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
TJ, TSTG
ESD
-55 to150
2000
℃
V
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
NOTE1: Pulse width limited by maximum junction temperature.
NOTE2: Surface Mounted on FR4 Board.
REV1.0
- SEP 2015 RELEASED -
- 3 -
AM1012
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL 1.8-V (G-S) MOSFET
ELECTRICAL CHARACTERISTICS
TA = 25°C Unless Otherwise Noted
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS=VGS,ID=250μA
VDS=0V, VGS=±4.5V
VDS=20V, VGS=0V
0.45
-
0.9
±1.0
100
5
V
-
±0.5
0.3
-
μA
nA
μA
mA
-
Zero Gate Voltage Drain Current
On-State Drain CurrentaNOTE3
IDSS
VDS=20V, VGS=0V, TJ=85°C
VDS=5 V, VGS=4.5V
VGS=4.5V, ID=600mA
VGS=2.5V, ID=500mA
VGS=1.8V, ID=350mA
VDS=10V, ID=400mA
IS=150mA,VGS=0V
-
ID(on)
700
-
-
-
-
-
-
-
0.41
0.53
0.70
1.0
0.8
0.70
0.85
1.25
-
Drain-Source On-State
ResistanceaNOTE3
rDS(on)
Ω
Forward TransconductanceNOTE3
Diode Forward VoltageNOTE3
Dynamic NOTE4
gfs
S
V
VSD
1.2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Qg
Qgs
Qgd
td(ON)
tr
-
-
-
750
75
225
5
-
-
-
-
-
-
-
VDS=10V, VGS=4.5V,
ID=250mA
pC
ns
-
VDD=10V, RL=47Ω,
ID≅200mA, VGEN=4.5V,
RG=10Ω
-
-
-
5
Turn-off Delay Time
td(OFF)
25
11
Fall Time
tf
NOTE3: Pulse test: pulse width ≤300us, duty cycle≤ 2%
NOTE4: Guaranteed by design, not subject to production testing.
REV1.0
- SEP 2015 RELEASED -
- 4 -
AM1012
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL 1.8-V (G-S) MOSFET
TYPICAL CHARACTERISTICS
1. Output Characteristics
3. On-Resistance vs. Drain Current
5. Gate Charge
2. Transfer Characteristics
4. Capacitance
6. On-Resistance vs. Junction Temperature
REV1.0
- SEP 2015 RELEASED -
- 5 -
AM1012
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL 1.8-V (G-S) MOSFET
7. Source-Drain Diode Forward Voltage
9. Threshold Voltage Variance vs. Temperature
11. BVGSS vs. Temperature
8. On-Resistance vs. Gate-to-Source Voltage
10. IGSS vs. Temperature
REV1.0
- SEP 2015 RELEASED -
- 6 -
AM1012
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL 1.8-V (G-S) MOSFET
12. Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A)
13. Normalized Thermal Transient Impedance, Junction-to-Foot
REV1.0
- SEP 2015 RELEASED -
- 7 -
AM1012
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL 1.8-V (G-S) MOSFET
PACKAGE INFORMATION
Dimension in SC-89 (Unit: mm)
MILLIMETERS
NOM
INCHES
DIM
MIN
MAX
1.700
0.950
0.800
0.330
MIN
NOM
0.063
MAX
0.067
0.040
0.031
0.013
A
B
C
D
G
H
J
1.500
0.750
0.600
0.230
1.600
0.059
0.030
0.024
0.009
0.850
0.034
0.700
0.028
0.280
0.011
0.500 BSC
0.530 REF
0.150
0.020 BSC
0.021 REF
0.006
0.100
0.300
0.200
0.500
0.004
0.012
0.008
0.020
K
L
0.400
0.016
1.100 REF
-
0.043 REF
-
M
N
S
10°
10°
-
-
10°
10°
-
-
-
-
1.500
1.600
1.700
0.059
0.063
0.067
REV1.0
- SEP 2015 RELEASED -
- 8 -
AM1012
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL 1.8-V (G-S) MOSFET
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer.
As used herein may
In order to
involve potential risks of death, personal injury, or servers property, or environmental damage.
minimize risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV1.0
- SEP 2015 RELEASED -
- 9 -
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