AM3423E3SVR [AITSEMI]
P-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | AM3423E3SVR |
| 厂家： | 
AiT Semiconductor |
| 描述： | P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：323K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM3423
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION
FEATURES
AM3423 is available in a SOT-23S package.
-20V/-2A,
R
R
DS(ON) = 150mΩ(MAX) @VGS = -4.5V
DS(ON) = 180mΩ(MAX) @VGS = -2.5V
Super High dense cell design for extremely low
RDS(ON)
Reliable and Rugged
Available in a SOT-23S package.
ORDERING INFORMATION
APPLICATION
Power Management
Portable Equipment and Battery Powered
Systems
Package Type
Part Number
AM3423E3SR
AM3423E3SVR
SOT-23S
E3S
SPQ: 3,000pcs/Reel
PIN DESCRIPTION
V: Halogen free Package
R: Tape & Reel
Note
AiT provides all RoHS products
REV1.0
- AUG 2017 RELEASED -
- 1 -
AM3423
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE MOSFET
PIN DESCRIPTION
Top View
Symbol
Function
Gate
Pin #
1
2
3
G
S
D
Source
Drain
REV1.0
- AUG 2017 RELEASED -
- 2 -
AM3423
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE MOSFET
ABSOLUTE MAXIMUM RATINGS
TC= 25℃, unless otherwise noted
VDS, Drain-Source Voltage
-20V
±10V
-2A
VGS, Gate-Source Voltage
ID, Drain Current-Continuous
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
TA = 25℃, unless otherwise noted
Parameter
Off Characteristics
Symbol
Conditions
Min
Typ.
Max
Units
Drain-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
BVDSS
IDSS
VGS=0V,ID=-250μA
-20
-
-
-
-
V
VDS=-20V,VGS=0V
-1
μA
IGSSF
IGSSR
VGS=10V, VDS=0V
VGS=-10V, VDS=0V
-
-
-
-
100
nA
nA
Gate-Body Leakage Current,
Reverse
-100
On Characteristics
Gate Threshold Voltage
Static Drain-Source
VGS(th)
VGS=VDS,ID=-250μA
VGS=-4.5V,ID=-3.0A
VGS=-2.5V,ID=-2.0A
-0.4
-
-
-
-1.0
150
180
V
-
-
RDS(ON)
mΩ
On-Resistance
Drain-Source Diode Characteristics and Maximum Ratings
Diode-Source Diode Forward
VSD
VGS=0V, IS=1.25A
-
-
-1.2
V
Voltage
REV1.0
- AUG 2017 RELEASED -
- 3 -
AM3423
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE MOSFET
TYPICAL CHARACTERISTICS
1. Output Characteristics
2. Transfer Characteristics
3. Breakdown Voltage Variation with Temperature
4. Gate Threshold Variation with Temperature
5. On-Resistance Variation with Temperature
6. On-Resistance vs. Drain Current
REV1.0
- AUG 2017 RELEASED -
- 4 -
AM3423
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE MOSFET
7. On-Resistance vs. Gate-to-Source Voltage
8. Source-Drain Diode Forward Voltage
REV1.0
- AUG 2017 RELEASED -
- 5 -
AM3423
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE MOSFET
PACKAGE INFORMATION
Dimension in SOT-23S (Unit: mm)
REV1.0
- AUG 2017 RELEASED -
- 6 -
AM3423
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE MOSFET
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer. As used herein may involve
potential risks of death, personal injury, or server property, or environmental damage. In order to minimize
risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV1.0
- AUG 2017 RELEASED -
- 7 -
相关型号：
©2020 ICPDF网 联系我们和版权申明