AM8204E6VR [AITSEMI]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET;
| 型号： | AM8204E6VR |
| 厂家： | 
AiT Semiconductor |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总9页 (文件大小：673K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM8204
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
FEATURES
The AM8204 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications .It is ESD protested.
VDS= 20V, ID= 6A
Typ.RDS(ON) = 17mΩ @ VGS= 4.5V
Typ.RDS(ON) = 22mΩ @ VGS= 2.5V
ESD Rating: 2000V HBM
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
AM8204 is available in a SOT-26 package.
Available in a SOT-26 package.
ORDERING INFORMATION
APPLICATION
PWM application
Load switch
Package Type
SOT-26
Part Number
AM8204E6R
AM8204E6VR
E6
PIN DESCRIPTION
V: Halogen free Package
R: Tape & Reel
Note
AiT provides all RoHS products
Suffix ꢀ V ꢀ means Halogen free Package
Schematic diagram
REV1.0
- JUN 2015 RELEASED -
- 1 -
AM8204
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PIN DESCRIPTION
Top View
Pin #
Symbol
S1
Function
Source
Drain
1
2
3
4
5
6
D1/D2
S2
Source
Gate
G2
D1/D2
G1
Drain
Gate
REV1.0
- JUN 2015 RELEASED -
- 2 -
AM8204
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25℃, unless otherwise noted
VDS, Drain-Source Voltage
20V
±12V
VGS, Gate-Source Voltage
ID, Drain Current-Continuous
6A
IDM, Drain Current-Pulsed NOTE1
30A
PD, Maximum Power Dissipation
1.25W
TJ,TSTG, Operating Junction and Storage Temperature Range
-55℃~150℃
Stress beyond above listed ꢀAbsolute Maximum Ratingsꢁ may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
THERMAL CHARACTERISTICS
Parameter
Symbol
RθJA
Limit
100
Units
Thermal Resistance, Junction-to-Ambient NOTE2
°C/W
REV1.0
- JUN 2015 RELEASED -
- 3 -
AM8204
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
ELECTRICAL CHARACTERISTICS
TA = 25℃, unless otherwise noted
Parameter
Off Characteristics
Symbol
Conditions
Min
Typ.
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics NOTE3
BVDSS
IDSS
VGS=0V,ID=250μA
VDS=20V,VGS=0V
VGS=±10V, VDS=0V
20
-
-
-
-
-
1
V
μA
μA
IGSS
-
±10
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
VGS=4.5V,ID=6A
VGS=2.5V,ID=5A
VDS=5V,ID=6A
0.45
0.7
17
22
20
1.0
24
30
-
V
mΩ
S
-
-
-
Drain-Source On-state Resistance RDS(ON)
Forward Transconductance
Dynamic CharacteristicsNOTE4
gFS
Input Capacitance
CISS
COSS
CRSS
-
-
-
650
140
60
-
-
-
VDS=10V, VGS=0V,
F=1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Switching Characteristics NOTE4
Turn-on Delay Time
tD(ON)
tR
tD(OFF)
tF
-
-
-
-
-
-
-
0.5
1
-
-
-
-
-
-
-
Turn-on Rise Time
VDD=10V, RL=1.5Ω,
VGS=5V, RGEN=3Ω
ns
Turn-off Delay Time
12
4
Turn-off Fall Time
Total Gate Charge
QG
8
VDS=10V, ID=6A
VGS=4.5V
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
2.5
3
nC
Drain-Source Diode Characteristics
Diode Forward Voltage NOTE3
Diode Forward Current NOTE2
VSD
IS
VGS=0V, IS=1A,
-
-
-
-
1.2
6
V
A
NOTE1: Repetitive Rating: Pulse width limited by maximum junction temperature.
NOTE2: Surface Mounted on FR4 Board, t ≤ 10 sec.
NOTE3: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
NOTE4: Guaranteed by design, not subject to production
REV1.0
- JUN 2015 RELEASED -
- 4 -
AM8204
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
TYPICAL CHARACTERISTICS
1. Power Dissipation
2. Safe Operation Area
3. Output Characteristics
4. Drain-Source On-Resistance
5. Transfer Characteristics
6. Drain-Source On-Resistance
REV1.0
- JUN 2015 RELEASED -
- 5 -
AM8204
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
7. RDSON vs. VGS
8. Capacitance vs. VDS
9. Gate Charge
10. Source- Drain Diode Forward
11. Normalized Maximum Transient Thermal Impedance
REV1.0
- JUN 2015 RELEASED -
- 6 -
AM8204
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
DETAILED INFORMATION
1.
Switching Test Circuit
2.
Switching Waveforms
REV1.0
- JUN 2015 RELEASED -
- 7 -
AM8204
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PACKAGE INFORMATION
Dimension in SOT-26(Unit: mm)
Symbol
Min
Max
A
A1
A2
b
1.050
0.000
1.050
0.300
0.100
2.820
1.500
2.650
1.250
0.100
1.150
0.500
0.200
3.020
1.700
2.950
c
D
E
E1
e
0.950(BSC)
E1
L
1.800
0.300
0°
2.000
0.600
8°
θ
REV1.0
- JUN 2015 RELEASED -
- 8 -
AM8204
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer. As used herein may involve
potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize
risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV1.0
- JUN 2015 RELEASED -
- 9 -
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