ALD310702PCL [ALD]
PRECISION P-CHANNEL EPAD MOSFET ARRAY QUAD NANOPOWER MATCHED PAIR;
| 型号： | ALD310702PCL |
| 厂家： | 
ADVANCED LINEAR DEVICES |
| 描述： | PRECISION P-CHANNEL EPAD MOSFET ARRAY QUAD NANOPOWER MATCHED PAIR |
| 文件： | 总9页 (文件大小：512K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
A
L
D
DVANCED
INEAR
EVICES, INC.
®
e
EPAD
A
ALD310702A/ALD310702
PRECISION P-CHANNEL EPAD® MOSFET ARRAY
V
= -0.20V
QUAD NANOPOWER™ MATCHED PAIR
GS(th)
APPLICATIONS
GENERAL DESCRIPTION
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
0.5% precision current mirrors and current sources
Low Tempco (<= 50ppm/°C) current mirrors/sources
Energy harvesting circuits
Very low voltage analog and digital circuits
Backup battery circuits & power failure detectors
Precision low level voltage-clamps
ALD310702A/ALD310702 high precision monolithic quad P-Channel
MOSFET arrays are matched at the factory using ALD's proven EPAD®
CMOS technology. This device is available in a quad version and is a
member of the EPAD® Matched Pair MOSFET Family. The
ALD310702A/ALD310702 is a P-channel version of the popular
ALD110802A/ALD110802 Precision Threshold device. Together, these
twoMOSFETseriesenablecomplementaryprecisionN-ChannelandP-
Channel MOSFET array based circuits.
Low level zero-crossing detector
Source followers and buffers
Precision capacitive probes and sensor interfaces
Precision charge detectors and charge integrators
Discrete differential amplifier input stage
Peak-detectors and level-shifters
High-side switches and Sample-and-Hold switches
Precision current multipliers
Intended for low voltage and low power small signal applications, the
ALD310702A/ALD310702 features precision -0.20V Gate Threshold
Voltage, which enables circuit designs with very low operating voltages
such as < +0.5V power supplies where the circuits operate below the
threshold voltage of the ALD310702A/ALD310702. This feature also
enhances input/output signal operating ranges, especially in very low
operating voltage environments. With these low threshold precision
devices, a circuit with multiple cascading stages can be constructed to
operate at extremely low supply or bias voltage levels. ALD310702A/
ALD310702 also features high input impedance (2.5 x 1010Ω) and high
DC current gain (>108).
Discrete analog switches / multiplexers
Discrete voltage comparators
FEATURES & BENEFITS
•
•
Precision matched Gate Threshold Voltages
Precision offset voltages (V ):
OS
ALD310702A: 2mV max.
ALD310702: 10mV max.
Sub-threshold voltage operation
ALD310702A/ALD310702 MOSFETs are designed for exceptional
matchingofdeviceelectricalcharacteristics.TheGateThresholdVoltage
•
•
•
•
•
•
•
•
•
•
•
•
+/-
V
is set precisely at -0.20V
0.02V, featuring a typical offset
GS(th)
voltage of only
Low min. operating voltage of less than 0.2V
Ultra low min. operating current of less than 1nA
Nano-power operation
Wide dynamic operating current ranges
Exponential operating current ranges
Matched transconductance and output conductance
Matched and tracked temperature characteristics
Tight lot-to-lot parametric control
+/-
0.001V (1mV). As these devices are on the same
monolithic chip, they also exhibit excellent temperature tracking
characteristics. They are versatile design components for a broad range
ofprecisionanalogapplicationssuchasbasicbuildingblocksforcurrent
mirrors, matching circuits, current sources, differential amplifier input
stages, transmission gates, and multiplexers. These devices also excel
in limited operating voltage applications such as very low level precision
voltage-clamps. In addition to matched pair electrical characteristics,
eachindividualMOSFETexhibitsindividualwellcontrolledmanufacturing
characteristics, enabling the user to depend on tight design limits from
different production batches.
Positive, zero, and negative V
tempco bias currents
GS(th)
Low input capacitance
Low input/output leakage currents
(Continued on next page)
PIN CONFIGURATION
ALD310702
BLOCK DIAGRAM
-
V
(5)
1
2
I
*
16
15
14
I
*
C1
C2
D
(15)
D
(6)
D
(2)
D
(11)
P3
M1
M2
P2
~
P4
P1
D
D
P1
P1
P2
G
(3)
G
(14)
G
I
(10)
G
P4
(7)
G
G
3
P1
P2
P3
P2
(16)
I
(1)
C2
C1
S
S
P1
13
12
11
P2
+
4
5
6
7
8
+
+
V
(12)
V
(12)
S
P1
(4)
S
(13)
S
(9)
S
(8)
P4
P2
P3
-
-
-
V
V
V
V
M4
M3
D
G
D
P3
P4
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
G
P3
P4
10
9
Operating Temperature Range *
0°C to +70°C
S
S
P4
P3
16-Pin SOIC Package
16-Pin Plastic Dip Package
ALD310702ASCL
ALD310702SCL
ALD310702APCL
ALD310702PCL
SCL, PCL PACKAGES
*I pins are internally connected, connect to V-
C
*Contact factory for industrial temp. range or user-specified threshold voltage values.
©2017 Advanced Linear Devices, Inc., Vers. 1.1
www.aldinc.com
1 of 9
GENERAL DESCRIPTION (cont.)
Thesedevicesarebuilttoofferminimumoffsetvoltageanddifferential
thermal response, and they can also be used for switching and
orbelowtheGateThresholdVoltage(subthresholdregion). Second,
the circuit can be biased and operated in the subthreshold region
with nA of bias current and nW of power dissipation.
+/-
+/-
amplifying applications in -0.40V to -8.0V ( 0.20V to
4.0V)
poweredsystemswherelowinputbiascurrent,lowinputcapacitance,
andfastswitchingspeedaredesired.Thesedevices,exhibitingwell
controlled turn-off and sub-threshold characteristics, operate the
same as standard enhancement mode P-Channel MOSFETs.
However, the precision of the Gate Threshold Voltage enable two
key additional characteristics, or operating features. First, the
operatingcurrentlevelvariesexponentiallywithgatebiasvoltageat
For most general applications, connect the V+ pin to the most
positive voltage and the V- and IC (internally-connected) pins to the
most negative voltage in the system. All other pins must have
voltages within these voltage limits at all times. Standard ESD
protection facilities and procedures for static sensitive devices are
required when handling these devices.
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, V
-8.0V
-8.0V
80mA
DS
Gate-Source voltage, V
Operating Current
Power dissipation
GS
500mW
Operating temperature range SCL, PCL
Storage temperature range
Lead temperature, 10 seconds
0°C to +70°C
-65°C to +150°C
+260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
+
-
V = +5V V = GND T = 25°C unless otherwise specified
A
ALD310702A
ALD310702
Typ
Parameter
Symbol
Min
Typ
Max
Min
Max
Unit
Test Conditions
= -1µA, V = -0.1V
DS
Gate Threshold
Voltage
V
V
-0.22
-0.20
-0.18
-0.22
-0.20
2
-0.18
V
I
GS(th)
OS
DS
Offset Voltage
1
-2
2
10
mV
V
V
- V
- V
GS(th)M1
GS(th)M3
GS(th)M2 or
GS(th)M4
Gate Threshold
Temperature
TC
-2
mV/°C
mA
VGS(th)
Drain Source On
Current
I
-2.03
570
1
-2.03
570
1
V
V
V
= V
= V
= V
= -5.0V
= -5.0V
= -5.0V
DS(ON)
GS
GS
GS
DS
DS
DS
Transconductance
Current2
G
µA/V
%
FS
Transconductance
Mismatch
∆G
FS
Output Conductance2
G
48
48
µA/V
KΩ
V
V
= -4.0V,
GS(th)
OS
= -5.0V
DS
Drain Source On
Resistance
R
1.14
1.14
V
V
= -5.0V,
DS(ON)
GS
DS
= -0.1V
Drain Source On
∆R
DS(ON)
1
1
%
Resistance Mismatch
Drain Source
Breakdown
BV
-8.0
-8.0
V
DSX
DS (OFF)
GSS
Drain Source
Leakage Current1
I
I
400
200
400
200
pA
pA
pF
Gate Leakage Current
Input Capacitance2
C
ISS
2.5
2.5
1
Notes:
Consists of junction leakage currents
Sample tested parameters
2
ALD310702A/ALD310702, Vers. 1.1
Advanced Linear Devices, Inc.
2 of 9
TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
OUTPUT CHARACTERISTICS
-2500
-2000
-2500
-2000
V- = -5.0V
= +25°C
V
= V
- 5V
V
= V
GS(th)
- 4V
+25°C
GS
GS(th)
GS
T
0°C
A
-25°C
V
V
= V
= V
- 4V
- 3V
GS
GS
GS(th)
-1500
-1000
-1500
-45°C
GS(th)
-1000
-500
0
+85°C
V
V
= V
= V
- 2V
- 1V
+70°C
+125°C
GS
GS
GS(th)
-500
0
GS(th)
0
-1
-2
-3
-4
-5
0
-2
-3
-4
-5
-1
DRAIN SOURCE ON VOLTAGE - V
(V)
DRAIN SOURCE ON VOLTAGE - V
DS(ON)
(V)
DS(ON)
FORWARD TRANSFER CHARACTERISTICS
FORWARD TRANSFER CHARACTERISTICS
(SUBTHRESHOLD)
-70
-60
-50
-40
100000
V
= -0.1V
DS
10000
1000
100
10
V+ = 0V
V- = -5V
ALD310700
ALD310702
ALD310704
ALD310708
T
A
= +25°C
-30
-20
ALD310700
ALD310702
V
= -0.1V
DS
1
V+ = 0V
V- = -5V
ALD310704
ALD310708
0.1
-10
0
T
A
= +25°C
0.01
1.0
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0
GATE SOURCE VOLTAGE - V (V)
0.5
1.0
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0
GATE SOURCE VOLTAGE - V (V)
0.5
GS
GS
DRAIN SOURCE ON CURRENT vs.
GATE AND DRAIN SOURCE VOLTAGE
LOW VOLTAGE OUTPUT
CHARACTERISTICS
500
400
-2500
-2000
-5V
-4V
V- = -5V
T
V+ = 0V
V- = -5V
= +25°C
= +25°C
A
-3V
-2V
300
200
T
A
ALD310700
-1500
100
0
ALD310702
V
- V = -1V
GS(th)
GS
-1000
-500
0
-100
ALD310704
-200
-300
-400
-500
ALD310708
0
-2
-3
-4
-5
-1
-0.4
0.5
-0.5
-0.3
0.2
0.4
-0.2 -0.1 0.0 0.1
0.3
GATE AND DRAIN SOURCE VOLTAGE
= V (V)
DRAIN SOURCE ON VOLTAGE - V
(V)
DS(ON)
V
GS
DS
ALD310702A/ALD310702, Vers. 1.1
Advanced Linear Devices, Inc.
3 of 9
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
FORWARD TRANSFER CHARACTERISTICS
FORWARD TRANSFER CHARACTERISTICS
FURTHER EXPANDED (SUBTHRESHOLD)
EXPANDED (SUBTHRESHOLD)
100
10
100000
10000
1000
V
= -5V
= +25°C
DS
T
A
1
ALD310700
ALD310702
ALD310704
ALD310708
0.1
100
0.01
0.001
10
1
V
= -5.0V
DS
0.0001
V+ = 0V
V- = -5V
0.1
0.00001
T
A
= +25°C
0.000001
0.01
1.0
0.5
0.0
-0.5
-1.0
-1.5
(V)
-2.0
0.6
0.4
0.3
0.2
0.1 0.0 -0.1 -0.2
0.5
GATE SOURCE VOLTAGE - V
GATE SOURCE OVERDRIVE VOLTAGE
- V (V)
GS
V
GS
GS(th)
GATE THRESHOLD VOLTAGE
vs. SUBSTRATE BIAS
GATE THRESHOLD VOLTAGE
vs. V- VOLTAGE
0.2
0
-2.0
-1.5
V
= -0.1V
DS
V+ = 0V
V
= -0.1V
ALD310708
DS
V- = -5V
= +25°C
= 0.000V
GS(th)
T
A
= +25°C
ALD310700: V
T
A
= -0.200V
= -0.400V
ALD310704
-0.2
GS(th)
ALD310702: V
ALD310704: V
-1.0
-0.4
-0.6
-0.8
-1.0
GS(th)
ALD310702
ALD310700
-0.5
0
= -0.800V
GS(th)
ALD310708: V
-3
-4
-6
-8
0
2
3
4
5
6
7
8
0
-1
-2
-5
-7
1
SUBSTRATE BIAS - V+ (V)
V- VOLTAGE (V)
GATE THRESHOLD VOLTAGE vs.
DRAIN SOURCE VOLTAGE
GATE THRESHOLD VOLTAGE
vs. AMBIENT TEMPERATURE
1.0
0.5
-1.0
-0.5
V- = -5V
T
ALD310708
= +25°C
A
ALD310704
ALD310702
ALD310700
ALD310700
ALD310702
ALD310704
0
-0.5
-1.0
0
0.5
1.0
V
= -0.1V
DS
V+ = 0V
V- = -5V
ALD310708
+25 +50
+75
-50
-25
0
+100 +125
0
-2
-3
-4
(V)
-5
-1
AMBIENT TEMPERATURE - T (°C)
DRAIN SOURCE VOLTAGE - V
A
DS
ALD310702A/ALD310702, Vers. 1.1
Advanced Linear Devices, Inc.
4 of 9
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
TRANSCONDUCTANCE vs.
AMBIENT TEMPERATURE
TRANSCONDUCTANCE vs.
GATE THRESHOLD VOLTAGE
1000
750
1000
750
V+ = 0V
V- = -5V
T
A
= +25°C
V
V
= V
GS(th)
= -5.0V
- 4.0V
- 1.0V
- 0.5V
GS
DS
V
V
= V - 4.0V
GS(th)
= -5.0V
GS
DS
500
250
500
250
0
V
V
= V
GS(th)
= -5.0V
V
V
= V
GS(th)
= -5.0V
- 1.0V
GS
DS
GS
DS
V
GS
V
DS
= V
GS(th)
= -5.0V
- 0.5V
V
GS
V
DS
= V
GS(th)
= -5.0V
0
-0.4
-0.6
-0.8
(V)
0.2
0
-0.2
-1.0
+25 +50
+75
-50
-25
0
+100 +125
AMBIENT TEMPERATURE - T (°C)
GATE THRESHOLD VOLTAGE - V
GS(th)
A
OUTPUT CONDUCTANCE
vs. AMBIENT TEMPERATURE
TRANSCONDUCTANCE vs.
GATE SOURCE OVERVOLTAGE
800
700
70
60
50
40
V
V
= V - 4.0V
GS(th)
= -5.0V
GS
DS
V = -0.1V
DS
V+ = 0V
V- = -5V
600
500
400
300
200
30
20
V
V
= V - 1.0V
GS(th)
= -5.0V
GS
DS
V
V
= V - 0.5V
GS(th)
= -5.0V
GS
DS
100
0
10
0
-.2.0
-3.0
-4.0
1.0
0.0
-1.0
-5.0
(V)
-50
-25
0
+25
+50
+75
+100 +125
GATE SOURCE OVERVOLTAGE - V -V
GS GS(th)
AMBIENT TEMPERATURE - T (°C)
A
OUTPUT CONDUCTANCE
vs. DRAIN SOURCE ON VOLTAGE
ZERO TEMPERATURE COEFFICIENT (ZTC)
-60
-50
-40
1000
800
-45°C
V
= -0.1V
0°C
DS
V+ = 0V
V- = -5V
V
- 4.0V
GS(th)
+25°C
600
-30
-20
-10
0
400
200
0
V
- 1.0V
GS(th)
+125°C
+85°C
V
- 0.5V
-2
GS(th)
-0.6
-1.4
-1.6
0.2
0.0 -0.2 -0.4
-0.8 -1.0 -1.2
0.4
0
-3
-4
-5
-1
GATE SOURCE OVERDRIVE VOLTAGE
V
DRAIN SOURCE ON VOLTAGE - V
(V)
DS(ON)
- V (V)
GS(th)
GS
ALD310702A/ALD310702, Vers. 1.1
Advanced Linear Devices, Inc.
5 of 9
TYPICAL APPLICATIONS
LOW VOLTAGE CURRENT SOURCE MIRROR
LOW VOLTAGE CURRENT SOURCE W/ GATE CONTROL
+
V
= +1.0V to +5.0V
+
V
= +1.0V to +5.0V
1/2 ALD310702
1/2 ALD310702
+
V
M
3
M
4
M
3
M
4
I
R
SET
SET
I
SOURCE
I
R
SET
SET
I
I
SOURCE
Digital Logic Control
of Current Source
ON
= I
SET
M
1
M
M
2
1/4 ALD1108xx,
1/4 ALD2108xx,
1/2 ALD1109xx or
1/2 ALD2129xx
SOURCE
1
V+ - Vt
=
R
SET
OFF
1/2 ALD1108xx,
1/2 ALD2108xx,
ALD1109xx or
ALD2129xx
M
: N-Channel MOSFET
M , M : N-Channel MOSFET
1
1
2
M , M : P-Channel MOSFET
M , M : P-Channel MOSFET
3
4
3
4
LOW VOLTAGE DIFFERENTIAL AMPLIFIER
+
V
= +5.0V
1/2 ALD310702
PMOS PAIR
M
3
M
4
V
V
OUT
M
M
1
2
-
+
V
IN
IN
NMOS PAIR
1/2 ALD1108xx,
1/2 ALD2108xx,
ALD1109xx or
ALD2129xx
Current
Source
M , M : N-Channel MOSFET
1
2
M , M : P-Channel MOSFET
3
4
0.5% PRECISION LOW VOLTAGE CURRENT SOURCE MULTIPLICATION
+
V
= +1.0V to +5.0V
+
A
V
= +1.0V to +5.0V
.
X
I
= I
SET
SOURCE
I
R
SET
SET
ALD310702
M
PSET
M
M
P3
M
M
P2
P1
PY
M
NX
M
NSET
M
N2
M
M
N3
N1
ALD1108xx or
ALD2108xx
A
.
.
Y
I
= I
SET
X
SOURCE
M
M
M
PSET: P1, P2
..M : P-Channel MOSFET
PY
M
M
M
NSET: N1, N2
..M : N-Channel MOSFET
NX
ALD310702A/ALD310702, Vers. 1.1
Advanced Linear Devices, Inc.
6 of 9
TYPICAL APPLICATIONS (cont.)
0.5% LOW VOLTAGE PRECISION CURRENT MIRRORS
+
+
V
= +1.0V to +5.0V
V
= +1.0V to +5.0V
I
R
1/2 ALD310702
SET
SET
I
SOURCE
M
M
4
3
M
2
M
1
I
SOURCE
I
R
SET
SET
1/2 ALD1108xx,
1/2 ALD2108xx,
ALD1109xx or
ALD2129xx
+
V
- Vt
I
= I
SET
=
SOURCE
R
SET
+
V
- Vt
I
= I =
SET
SOURCE
R
SET
1.5KΩ < R
SET
< 5.0MΩ
M
1,
M : N-Channel MOSFET
2
M , M : P-Channel MOSFET
3 4
0.5% PRECISION LOW VOLTAGE CASCODE CURRENT SOURCES
+
V
= +1.5V to +5.0V
MP
MP
MP
MP
MP
A2
B2
A3
A4
MP
MP
I
A1
ALD310702
ALD310702
MP
B3
B4
B1
R
SET
SET
I
SOURCE
+
V
- 2Vt
SET
.
I
= 3
I
= 3
SET
SOURCE
(
)
R
MP ...MP : ALD310702 P-Channel MOSFET (1st individual pkg)
A1 A4
MP ...MP : ALD310702 P-Channel MOSFET (2nd individual pkg)
B1 B4
0.5% PRECISION LOW TEMPCO CASCODE CURRENT SOURCES
+
+
V
= +3.0V to +5.0V
V
= +1.0V to +1.5V
ALD310702
I
R
SET
SET
I
SOURCE
M
2
M
1
M
4
M
3
M
4
M
I
3
M
2
M
1
I
R
SET
SOURCE
SET
ALD1108xx or
ALD2108xx
+
V
- 2Vt
SET
I
= I =
SET
SOURCE
R
Temperature stable <= 50ppm/
°
C when I
= 57µA.
SET
M , M , M , M : P-Channel MOSFET
3
M , M , M , M : N-Channel MOSFET
3
1
2
4
1
2
4
ALD310702A/ALD310702, Vers. 1.1
Advanced Linear Devices, Inc.
7 of 9
SOIC-16 PACKAGE DRAWING
16 Pin Plastic SOIC Package
E
Millimeters
Inches
Dim
A
Min
Max
Min
Max
1.75
0.25
0.45
0.25
10.00
4.05
0.053
0.069
1.35
S (45°)
0.004
0.014
0.007
0.385
0.140
0.010
0.018
0.010
0.394
0.160
0.10
0.35
0.18
9.80
3.50
A
1
b
C
D-16
E
D
1.27 BSC
0.050 BSC
0.224
e
6.30
0.937
8°
0.248
0.037
8°
5.70
0.60
0°
H
0.024
0°
L
A
ø
0.50
0.010
0.020
0.25
S
A
e
1
b
S (45°)
C
H
L
ø
ALD310702A/ALD310702, Vers. 1.1
Advanced Linear Devices, Inc.
8 of 9
PDIP-16 PACKAGE DRAWING
16 Pin Plastic DIP Package
E
E
1
Millimeters
Inches
Dim
A
Min
Max
Min
Max
5.08
0.105
0.200
3.81
0.38
1.27
0.89
0.38
0.20
18.93
5.59
7.62
2.29
7.37
2.79
0.38
0°
1.27
2.03
1.65
0.51
0.30
21.33
7.11
8.26
2.79
7.87
3.81
1.52
15°
0.015
0.050
0.035
0.015
0.008
0.745
0.220
0.300
0.090
0.290
0.110
0.015
0°
0.050
0.080
0.065
0.020
0.012
0.840
0.280
0.325
0.110
0.310
0.150
0.060
15°
A
A
1
2
b
b
1
c
D
D-16
E
S
E
1
A
2
e
A
e
1
L
L
A
1
S-16
ø
e
b
b
1
c
ø
e
1
ALD310702A/ALD310702, Vers. 1.1
Advanced Linear Devices, Inc.
9 of 9
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