ALD810021 [ALD]
QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB) MOSFET ARRAY;
| 型号： | ALD810021 |
| 厂家： | 
ADVANCED LINEAR DEVICES |
| 描述： | QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB) MOSFET ARRAY 局域网 |
| 文件： | 总6页 (文件大小：449K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
ADVANCED
LINEAR
DEVICES, INC.
®
e
EPAD
A
ALD810017/ALD910017
QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET ARRAY
GENERAL DESCRIPTION
FEATURES & BENEFITS
• Simple and economical to use
• Precision factory trimmed
The ALD810017/ALD910017 are members of the ALD8100xx
(quad) and ALD9100xx (dual) family of Supercapacitor Auto Bal-
ancing MOSFETs, or SAB™ MOSFETs. SAB MOSFETs are built
with production proven EPAD® technology and are designed to ad-
dress voltage and leakage-current balancing of supercapacitors
connected in series. Supercapacitors, also known as ultracapacitors
or supercaps, connected in series can be leakage-current balanced
by using a combination of one or more devices connected across
each supercapacitor stack to prevent over-voltages.
• Automatically regulates and balances leakage currents
• Effective for supercapacitor charge-balancing
• Balances up to 4 supercaps with a single IC package
• Balances 2-cell, 3-cell, 4-cell series-connected supercaps
• Scalable to larger supercap stacks and arrays
• Near zero additional leakage currents
• Zero leakage at 0.3V below rated voltages
• Balances series and/or parallel-connected supercaps
• Leakage currents are exponential function of cell voltages
• Active current ranges from <0.3nA to >1000µA
• Always active, always fast response time
The ALD810017 offers a set of unique, precise operating voltage
and current characteristics for each of four SAB MOSFET devices,
as shown in its Operating Electrical Characteristics table. It can be
used to balance up to four supercapacitors connected in series.
TheALD910017 has its own set of unique precision Operating Elec-
trical Characteristics for each of its two SAB MOSFET devices,
suitable for up to two series-connected supercapacitors.
• Minimizes leakage currents and power dissipation
APPLICATIONS
• Series-connected supercapacitor cell leakage balancing
• Energy harvesting
• Long term backup battery with supercapacitor outputs
• Zero-power voltage divider at selected voltages
• Matched current mirrors and current sources
• Zero-power mode maximum voltage limiter
• Scaled supercapacitor stacks and arrays
Each SAB MOSFET features a precision gate threshold voltage in
the V mode, which is 1.70V when the gate-drain source terminals
t
(V
GS
= V ) are connected together at a drain-source current of
DS
I
= 1µA. In this mode, input voltage V = V
IN
= V
Dif-
DS(ON)
GS
DS.
character-
ferent V produces an Output Current I
= I
DS(ON)
IN OUT
istic and results in an effective variable resistor that varies in value
PIN CONFIGURATIONS
ALD810017
exponentially with V . This V , when connected across each
supercapacitor in a series, balances each supercapacitor to within
its voltage and current limits.
IN IN
When V = 1.70V is applied to an ALD810017/ALD910017, its
IN
16
15
14
13
12
11
1
2
3
IC*
IC*
I
is 1µA. For a 100mV increase in V , to 1.80V, I increases
OUT
IN OUT
M1
by about tenfold. For an additional increase in V to 1.92V for the
M2
IN
D
N1
D
N2
N2
ALD910017 (1.94V for the ALD810017), I
OUT
increases one hun-
dredfold, to 100µA. Conversely, for a 100mV decrease in V to
IN
1.60V, I
decreases to one tenth of its previous value, to 0.1µA.
OUT
Another 100mV decrease in input voltage would reduce I
G
S
G
S
N1
to
OUT
0.01µA. Hence, when an ALD810017/ALD910017 SAB MOSFET
is connected across a supercapacitor that charges to less than
1.50V, it would dissipate essentially no power.
V-
V-
N1
N2
V+
4
5
V-
(Continued on next page)
M3
V-
M4
D
N4
G
N4
S
N4
D
N3
N3
N3
6
7
8
PRODUCT FAMILY SPECIFICATIONS
G
S
10
9
For more information on supercapacitor balancing, how SAB
MOSFETs achieve automatic supercapacitor balancing, the device
characteristics of the SAB MOSFET family, product family product
selection guide, applications, configurations, and package infor-
mation, please download from www.aldinc.com the document:
V-
SCL PACKAGE
“ALD8100xx/ALD9100xx Family of Supercapacitor Auto Balanc-
ing (SAB™) MOSFET ARRAYs”
ALD910017
V-
I
C
*
V+
8
7
6
5
1
2
3
4
G
D
G
D
N1
N2
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range
N1
N1
N2
Package
0°C to +70°C
-40°C to +85°C
S
S
V-
N2,
(Commercial)
(Industrial)
16-Pin SOIC
8-Pin SOIC
ALD810017SCL
ALD910017SAL
ALD810017SCLI
ALD910017SALI
SAL PACKAGE
*IC pins are internally connected, connect to V-
©2014 Advanced Linear Devices, Inc., Vers. 2.0
www.aldinc.com
1 of 6
APPLYING THE ALD810017/ALD910017:
GENERAL DESCRIPTION (CONT.)
The voltage dependent characteristic of the ALD810017/
ALD910017 on-resistance is effective in controlling excessive volt-
age rise across a supercapacitor when connected across it. In se-
ries-connected supercapacitor stacks, when one supercapacitor
voltage rises, the voltage of the other supercapacitors drops, with
the ones that have the highest leakage currents having the lowest
supercapacitor voltages. The SAB MOSFETs connected across
these supercapacitors would exhibit complementary opposing cur-
rent levels, resulting in little additional leakage currents other than
those caused by the supercapacitors themselves.
1) Select a maximum supercapacitor leakage current limit for any
supercapacitor used in the stack. This is the same as output cur-
rent, I , of theALD810017/ALD910017. Test that each
= I
OUT DS(ON)
supercapacitor leakage current meets this maximum current limit
before use in the stack.
2) Determine whether the input voltage V (V
IN GS
= V ) at that
DS
I
is acceptable for the intended application. This voltage is the
OUT
same voltage as the maximum desired operating voltage of the
supercapacitor. For example, with theALD810017, I = 1000µA
OUT
corresponds to V = 2.22V.
IN
For technical assistance, please contact ALD technical support at
techsupport@aldinc.com.
3) Determine that the operating voltage margin, due to various
tolerances and/or temperature effects, is adequate for the intended
operating environment of the supercapacitor.
SCHEMATIC DIAGRAM OF A TYPICAL
CONNECTION FOR A FOUR-SUPERCAP STACK
V+ ≤ +15.0V
ALD8100XX
I
≤ 80mA
DS(ON)
SCHEMATIC DIAGRAM OF A TYPICAL
CONNECTION FOR A TWO-SUPERCAP STACK
2, 12
M1
+
3
C1
4
V+ ≤ +15.0V
ALD9100XX
V
1
15
I
≤ 80mA
DS(ON)
+
+
+
14
M2
13
C2
C3
C4
3, 8
M1
+
+
2
7
V
2
C1
C2
11
M3
4
10
7
V
1
9
6
V
3
6
M2
M4
1, 5
1, 5, 8, 16
1-16 DENOTES PACKAGE PIN NUMBERS
C1-C4 DENOTES SUPERCAPACITORS
1-8 DENOTES PACKAGE PIN NUMBERS
C1-C2 DENOTES SUPERCAPACITORS
ALD810017/ALD910017
Advanced Linear Devices, Inc.
2 of 6
ABSOLUTE MAXIMUM RATINGS
V+ to V- voltage
Drain-Source voltage, V
Gate-Source voltage, V
Operating Current
Power dissipation
15.0V
10.6V
10.6V
80mA
500mW
DS
GS
Operating temperature range SCL
Operating temperature range SCLI
Storage temperature range
0°C to +70°C
-40°C to +85°C
-65°C to +150°C
+260°C
Lead temperature, 10 seconds
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
+
-
V = +5V, V = GND, T = 25°C, V = V
IN
=V
I
= I
unless otherwise specified
A
GS
DS, OUT DS(ON)
ALD810017
Typ
Parameter
Symbol
Min
Max
Unit
Test Conditions
= V I
DS; DS(ON)
Gate Threshold Voltage
Offset Voltage
V
V
1.68
1.70
5
1.72
20
V
V
GS
= 1µA
= 1µA
t
mV
V
- V or V - V
t2 t3
OS
t1
t4
Offset Voltage Tempco
TC
TC
5
µV/C
mV/C
V
V
V
- V or V - V
VOS
Vt
t1
t2
t3
t4
Gate Threshold Voltage Tempco
-2.2
= V
I
DS; DS(ON)
GS
Output Current
Drain Source On Resistance
I
R
0.0001
13000
µA
MΩ
= 1.30V
= 1.40V
= 1.50V
= 1.60V
= 1.70V
= 1.80V
= 1.94V
= 2.04V
= 2.22V
= 2.52V
= 3.12V
OUT
DS(ON)
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
Output Current
Drain Source On Resistance
I
R
0.001
1400
µA
MΩ
V
V
V
V
V
V
V
V
V
V
OUT
DS(ON)
Output Current
Drain Source On Resistance
I
R
0.01
150
µA
MΩ
OUT
DS(ON)
Output Current
Drain Source On Resistance
I
R
0.1
16
µA
MΩ
OUT
DS(ON)
Output Current
Drain Source On Resistance
I
R
1
µA
MΩ
OUT
DS(ON)
1.7
Output Current
Drain Source On Resistance
I
R
10
µA
MΩ
OUT
DS(ON)
0.18
Output Current
Drain Source On Resistance
I
R
100
µA
MΩ
OUT
DS(ON)
0.019
Output Current
Drain Source On Resistance
I
R
300
µA
MΩ
OUT
DS(ON)
0.007
Output Current
Drain Source On Resistance
I
R
1000
µA
MΩ
OUT
DS(ON)
0.002
Output Current
Drain Source On Resistance
I
R
3000
µA
MΩ
OUT
DS(ON)
0.001
Output Current
Drain Source On Resistance
I
R
10000
µA
MΩ
OUT
DS(ON)
0.0003
Drain Source Breakdown Voltage
Drain Source Leakage Current1
BV
I
10.6
V
DSX
10
5
400
4
pA
nA
pA
nA
pF
V
V
= V
= V
= +125°C
= V
= V
= V - 1.0
t
DS(OFF)
IN
IN
GS
GS
DS
DS
= V - 1.0,
t
T
A
Gate Leakage Current1
I
200
1
V
V
= 5.0V, V
= 0V
= 0V,
GSS
GS
DS
DS
= 5.0V, V
GS
= +125°C
T
A
Input Capacitance
Turn-on Delay Time
Turn-off Delay Time
C
15
V
= 0V, V
= 5.0V
DS
ISS
GS
t
t
on
off
10
10
60
ns
ns
dB
Crosstalk
f = 100KHz
ALD810017/ALD910017
Advanced Linear Devices, Inc.
3 of 6
ABSOLUTE MAXIMUM RATINGS
V+ to V- voltage
Drain-Source voltage, V
Gate-Source voltage, V
Operating Current
Power dissipation
15.0V
10.6V
10.6V
80mA
500mW
DS
GS
Operating temperature range SAL
Operating temperature range SALI
Storage temperature range
0°C to +70°C
-40°C to +85°C
-65°C to +150°C
+260°C
Lead temperature, 10 seconds
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
+
-
V = +5V, V = GND, T = 25°C, V = V
IN
=V
I
= I
unless otherwise specified
A
GS
DS, OUT DS(ON)
ALD910017
Typ
Parameter
Symbol
Min
Max
Unit
Test Conditions
Gate Threshold Voltage
Offset Voltage
V
V
1.68
1.70
5
1.72
20
V
V
V
V
V
V
= V
I
= 1µA
= 1µA
t
GS
t1
DS; DS(ON)
mV
- V
t2
OS
Offset Voltage Tempco
TC
TC
5
µV/C
mV/C
- V
t2
VOS
Vt
t1
Gate Threshold Voltage Tempco
-2.2
= V
I
GS
DS; DS(ON)
Output Current
Drain Source On Resistance
I
R
0.0001
13000
µA
MΩ
= 1.30V
= 1.40V
= 1.50V
= 1.60V
= 1.70V
= 1.80V
= 1.92V
= 2.00V
= 2.14V
= 2.20V
= 2.70V
OUT
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
DS(ON)
Output Current
Drain Source On Resistance
I
R
0.001
1400
µA
MΩ
V
V
V
V
V
V
V
V
V
V
OUT
DS(ON)
Output Current
Drain Source On Resistance
I
R
0.01
150
µA
MΩ
OUT
DS(ON)
Output Current
Drain Source On Resistance
I
R
0.1
16
µA
MΩ
OUT
DS(ON)
Output Current
Drain Source On Resistance
I
R
1
µA
MΩ
OUT
DS(ON)
1.7
Output Current
Drain Source On Resistance
I
R
10
µA
MΩ
OUT
DS(ON)
0.18
Output Current
Drain Source On Resistance
I
R
100
µA
MΩ
OUT
DS(ON)
0.019
Output Current
Drain Source On Resistance
I
R
300
µA
MΩ
OUT
DS(ON)
0.007
Output Current
Drain Source On Resistance
I
R
1000
µA
MΩ
OUT
DS(ON)
0.002
Output Current
Drain Source On Resistance
I
R
3000
µA
MΩ
OUT
DS(ON)
0.001
Output Current
Drain Source On Resistance
I
R
10000
µA
MΩ
OUT
DS(ON)
0.0003
Drain Source Breakdown Voltage
Drain Source Leakage Current1
BV
I
10.6
V
DSX
10
5
400
4
pA
nA
pA
nA
pF
V
V
= V
= V
= +125°C
= V
= V
= V - 1.0
t
DS(OFF)
IN
IN
GS
GS
DS
DS
= V - 1.0,
t
T
A
Gate Leakage Current1
I
200
1
V
V
= 5.0V, V
= 0V
= 0V,
GSS
GS
DS
DS
= 5.0V, V
GS
= +125°C
T
A
Input Capacitance
Turn-on Delay Time
Turn-off Delay Time
C
30
V
= 0V, V = 5.0V
DS
ISS
GS
t
t
on
off
10
10
60
ns
ns
dB
Crosstalk
f = 100KHz
ALD810017/ALD910017
Advanced Linear Devices, Inc.
4 of 6
SOIC-16 PACKAGE DRAWING
16 Pin Plastic SOIC Package
E
Millimeters
Inches
Dim
A
Min
Max
Min
Max
1.75
0.25
0.45
0.25
10.00
4.05
0.053
0.069
1.35
S (45°)
0.004
0.014
0.007
0.385
0.140
0.010
0.018
0.010
0.394
0.160
0.10
0.35
0.18
9.80
3.50
A
1
b
C
D-16
E
D
1.27 BSC
0.050 BSC
0.224
e
6.30
0.937
8°
0.248
0.037
8°
5.70
0.60
0°
H
0.024
0°
L
A
ø
0.50
0.010
0.020
0.25
S
A
e
1
b
S (45°)
C
H
L
ø
ALD810017/ALD910017
Advanced Linear Devices, Inc.
5 of 6
SOIC-8 PACKAGE DRAWING
8 Pin Plastic SOIC Package
E
Millimeters
Inches
Dim
A
Min
Max
Min
Max
1.75
0.25
0.45
0.25
5.00
4.05
0.053
0.069
1.35
0.004
0.014
0.007
0.185
0.140
0.010
0.018
0.010
0.196
0.160
0.10
0.35
0.18
4.69
3.50
S (45°)
A
1
b
C
D-8
E
D
1.27 BSC
0.050 BSC
0.248
e
6.30
0.937
8°
0.224
0.024
0°
5.70
0.60
0°
H
0.037
8°
A
L
ø
S
A
1
e
0.50
0.010
0.020
0.25
b
S (45°)
C
H
L
ø
ALD810017/ALD910017
Advanced Linear Devices, Inc.
6 of 6
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