A1366LKTTN-10-T [ALLEGRO]
Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC;
| 型号： | A1366LKTTN-10-T |
| 厂家： | 
ALLEGRO MICROSYSTEMS |
| 描述： | Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC |
| 文件： | 总22页 (文件大小：976K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A1366
Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC
With Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output
Description
Features and Benefits
•
Factory programmed sensitivity and quiescent output
voltage with high resolution
The Allegro™ A1366 factory-programmable linear Hall-
effect current sensor IC has been designed to achieve high
accuracy and resolution. The goal is achieved through new
proprietary linearly interpolated temperature compensation
technology that is programmed at the Allegro factory, which
provides sensitivity and offset that are virtually flat across
the full operating temperature range. The flat performance
over temperature makes this IC ideally suited for current
sensing applications. Temperature compensation is done in
the digital domain with integrated EEPROM technology
without sacrificing the analog signal path bandwidth, making
this device ideal for HEV inverter, DC-to-DC converter, and
electric power steering (EPS) applications.
•
Proprietary segmented linear interpolated temperature
compensation (TC) technology provides a typical accu-
racy of 1% across the full operating temperature range
Extremely low noise and high resolution achieved
via proprietary Hall element and low noise amplifier
circuits
120 kHz nominal bandwidth achieved via proprietary
packaging and chopper stabilization techniques
Patented circuits suppress IC output spiking during fast
current step inputs
•
•
•
•
•
Open circuit detection on ground pin (broken wire)
Undervoltage lockout for VCC below specification
ThisratiometricHall-effectsensorICprovidesavoltageoutput
thatisproportionaltotheappliedmagneticfield.Sensitivityand
quiescent (zero field) output voltage are factory programmed
with high resolution which provides for an accuracy of less
than ±1%, typical, over temperature.
Continued on the next page…
Package: 4-pin SIP (suffix KT)
ThesensorICincorporatesahighlysensitiveHallelementwith
aBiCMOSinterfaceintegratedcircuitthatemploysalownoise,
small-signal high-gain amplifier, as well as a low-impedance
output stage, and a proprietary, high bandwidth dynamic offset
1 mm case thickness
Not to scale
Continued on the next page…
Functional Block Diagram
V+
VCC
To all subcircuits
Programming
Control
Temperature
Sensor
EEPROM and
Control Logic
CBYPASS
Sensitivity Control
Offset Control
VOUT
CL
Signal Recovery
GND
A1366-DS
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
Features and Benefits (continued)
Description (continued)
•
•
•
•
•
•
Ratiometric sensitivity and quiescent voltage output
Precise recoverability after temperature cycling
Wide ambient temperature range: –40°C to 150°C
Immune to mechanical stress
Extremely thin package: 1 mm case thickness
AEC Q-100 automotive qualified
cancellation technique. These advances in Hall-effect technology
work together to provide an industry leading sensing resolution at
the full 120 kHz bandwidth. The device has built in broken ground
wire detection for high reliability in automotive applications.
Device parameters are specified across an extended ambient
temperature range: –40°C to 150°C. The A1366 sensor IC is
provided in an extremely thin case (1 mm thick), 4-pin SIP (single
in-line package, suffix KT) that is lead (Pb) free, with 100% matte
tin lead frame plating.
Selection Guide
Part Number
Sensitivity (Typ.)
Packing*
(mV/G)
A1366LKTTN-1-T
A1366LKTTN-2-T
A1366LKTTN-5-T
A1366LKTTN-10-T
4000 pieces per 13-in. reel
4000 pieces per 13-in. reel
4000 pieces per 13-in. reel
4000 pieces per 13-in. reel
1
2.5
5
10
*Contact Allegro for additional packing options
Allegro MicroSystems, LLC
115 Northeast Cutoff
2
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
Absolute Maximum Ratings
Characteristic
Symbol
VCC
Notes
Rating
Unit
V
Forward Supply Voltage
Reverse Supply Voltage
Forward Output Voltage
Reverse Output Voltage
Output Source Current
6
–0.1
VRCC
V
VOUT
25
V
VROUT
IOUT(source)
IOUT(sink)
TA
–0.1
V
VOUT to GND
10
mA
mA
ºC
ºC
ºC
Output Sink Current
VCC to VOUT
10
Operating Ambient Temperature
Storage Temperature
L temperature range
–40 to 150
–65 to 165
165
Tstg
Maximum Junction Temperature
TJ(max)
Pin-out Diagram
Terminal List Table
Number
Name
Function
1
VCC
Input power supply, use bypass capacitor to connect to ground
Output signal
2
VOUT
3
4
NC
No connection; connect to GND for optimal ESD performance
Ground
GND
1
2 3 4
(Ejector pin mark on
opposite side)
Allegro MicroSystems, LLC
115 Northeast Cutoff
3
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
Thermal Characteristics may require derating at maximum conditions, see application information
Characteristic
Symbol
Test Conditions*
Value
Unit
On 1-layer PCB with exposed copper limited to
solder pads
Package Thermal Resistance
RθJA
174
ºC/W
*Additional thermal information available on the Allegro website
Power Dissipation versus Ambient Temperature
900
800
700
600
500
400
300
200
100
0
(
R
θ
J
A
=
1
7
4
º
C
/
W
)
20
40
60
80
100
120
140
160
180
Temperature, T (°C)
A
Allegro MicroSystems, LLC
115 Northeast Cutoff
4
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
COMMON OPERATING CHARACTERISTICS Valid through the full operating temperature range, TA, CBYPASS = 0.1 µF,
VCC = 5 V; unless otherwise specified
Characteristics
Electrical Characteristics
Supply Voltage
Symbol
Test Conditions
Min.
Typ.
Max.
Unit1
VCC
ICC
4.5
–
5.0
10
5.5
15
V
Supply Current
No load on VOUT
mA
TA = 25°C, CBYPASS = Open, CL = 1 nF, Sens =
2.5 mV/G, constant magnetic field of 320 G
Power-On Time2
tPO
78
30
4
–
–
–
–
–
µs
µs
V
–
Temperature Compensation
Power-On Time2
TA = 150°C, CBYPASS = Open, CL= 1 nF, Sens =
2.5 mV/G, constant magnetic field of 320 G
tTC
–
TA = 25°C, VCC rising and device function
enabled
VUVLOH
VUVLOL
tUVLOE
–
Undervoltage Lockout (UVLO)
Threshold2
TA = 25°C, VCC falling and device function
disabled
–
–
3.5
64
V
TA = 25°C, CBYPASS = Open, CL = 1 nF, Sens =
2.5 mV/G, VCC Fall Time (5 V to 3 V) = 1.5 µs
µs
UVLO Enable/Disable Delay Time2
Power-On Reset Voltage2
TA = 25°C, CBYPASS = Open, CL = 1 nF, Sens =
2.5 mV/G, VCC Recover Time (3 V to 5 V) =
1.5 µs
tUVLOD
–
14
–
µs
VPORH
VPORL
tPORR
Vz
TA = 25°C, VCC rising
TA = 25°C, VCC falling
TA = 25°C, VCC rising
TA = 25°C, ICC = 30 mA
Small signal –3 dB, CL = 1 nF, TA = 25°C
TA = 25°C
–
–
2.6
2.3
64
–
–
–
–
–
–
V
V
Power-On Reset Release Time2
Supply Zener Clamp Voltage
Internal Bandwidth
–
µs
V
6.5
–
7.5
120
500
BWi
fC
kHz
kHz
Chopping Frequency3
–
Output Characteristics
TA = 25°C, magnetic field step of 320 G,
CL = 1 nF, Sens = 2.5 mV/G
Propagation Delay Time2
Rise Time2
tPD
tR
–
–
–
2.2
3.6
3.7
–
–
–
µs
µs
µs
TA = 25°C, magnetic field step of 320 G,
CL = 1 nF, Sens = 2.5 mV/G
TA = 25°C, magnetic field step of 320 G,
CL = 1 nF, Sens = 2.5 mV/G
Response Time2
tRESPONSE
VSAT(HIGH) TA = 25°C, RL(PULLDWN) = 10 kΩ to GND
VSAT(LOW) TA = 25°C, RL(PULLUP) = 10 kΩ to VCC
4.7
–
–
–
–
V
Output Saturation Voltage2
400
mV
Continued on the next page…
Allegro MicroSystems, LLC
115 Northeast Cutoff
5
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
COMMON OPERATING CHARACTERISTICS (continued) Valid through the full operating temperature range, TA;
BYPASS = 0.1 µF, VCC = 5 V; unless otherwise specified
C
Characteristics
Symbol
Test Conditions
Min.
Typ.
VCC
100
Max.
Unit1
V
VBRK(HIGH) TA = 25°C, RL(PULLUP) = 10 kΩ to VCC
VBRK(LOW) TA = 25°C, RL(PULLDWN) = 10 kΩ to GND
–
–
–
–
Broken Wire Voltage2
mV
Output Characteristics (continued)
Noise
¯
mGRMS/√(Hz)
BN
TA = 25°C, CL = 1 nF, Bandwidth = BWi
–
–
1.1
9
–
DC Output Resistance
ROUT
–
Ω
kΩ
RL(PULLUP) VOUT to VCC
RL(PULLDWN) VOUT to GND
4.7
4.7
–
–
–
–
Output Load Resistance
–
kΩ
Output Load Capacitance4
Output Slew Rate5
CL
VOUT to GND
1
10
–
nF
SR
Sens = 2.5 mV/G, CL = 1 nF
–
230
V/ms
Error Components
Linearity Sensitivity Error2,6
Symmetry Sensitivity Error2
LinERR
–1
–1
< ±0.25
< ±0.25
1
1
%
%
SymERR
Ratiometry Quiescent Voltage Output
Error2,7
Through supply voltage range (relative to VCC
= 5 V)
RatERRVOUT(Q)
–1
–
0
1
–
%
%
Through supply voltage range (relative to VCC
= 5 V)
Ratiometry Sensitivity Error2,7
RatERRSens
±1
11 G (gauss) = 0.1 mT (millitesla).
2See Characteristic Definitions section.
3fC varies up to approximately ± 20% over the full operating ambient temperature range, TA, and process.
4Output stability is maintained for capacitive loads as large as 10 nF.
5High-to-low transition of output voltage is a function of external load components and device sensitivity.
6Linearity applies to output voltage ranges of ±2 V from the quiescent output for bidirectional devices.
7Percent change from actual value at VCC = 5 V, for a given temperature, through the supply voltage operating range.
Allegro MicroSystems, LLC
115 Northeast Cutoff
6
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
A1366LKT-1-T PERFORMANCE CHARACTERISTICS1: TA = –40°C to 150°C, CBYPASS = 0.1 µF, VCC = 5 V, unless
otherwise specified
Characteristic
Sensitivity3
Symbol
Test Conditions
Min.
0.975
-2.5
Typ.
Max.
1.025
2.5
Unit2
mV/G
%
SensTA
Measured using 600 G, TA = 25°C
1
0
0
TA = 25°C to 150°C
TA = -40°C to 25°C
Sensitivity Drift through
Temperature Range
ΔSensTC
%
-2.5
2.5
Sensitivity Drift Due to
Package Hysteresis
TA = 25°C, after temperature cycling, 25°C to 150°C and back
to 25°C
∆SensPKG
%
–
±1.25
–
TA = –40°C to 150°C, shift after AEC Q100 grade 0 qualification
testing
Sensitivity Drift Over Lifetime4 ∆SensLIFE
%
–
–
–
±1
3.15
0.5
–
–
–
TA = 25°C, CL = 1 nF
mVP-P
mVRMS
Noise
VN
TA = 25°C, CL = 1 nF
VOUT(Q)TA TA = 25°C
V
V
V
2.490
2.490
2.490
2.500
2.500
2.500
2.510
2.510
2.510
Quiescent Output Voltage5
VOUT(Q)HT
VOUT(Q)LT
TA = 25°C to 150°C
TA = –40°C to 25°C
Quiescent Output Voltage Drift
Over Lifetime4
TA = –40°C to 150°C, shift after AEC Q100 grade 0 qualification
testing
∆VOUT(Q)LIFE
mV
–
±2
–
1See Characteristic Performance Data section for parameter distributions across temperature range.
21 G (gauss) = 0.1 mT (millitesla).
3This parameter may drift a maximum of ΔSensLIFE over lifetime.
4Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, cannot
be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information.
5This parameter may drift a maximum of ΔVOUT(Q)LIFE over lifetime.
Allegro MicroSystems, LLC
115 Northeast Cutoff
7
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
A1366LKT-2-T PERFORMANCE CHARACTERISTICS1: TA = –40°C to 150°C, CBYPASS = 0.1 µF, VCC = 5 V, unless
otherwise specified
Characteristic
Sensitivity3
Symbol
Test Conditions
Min.
2.437
-2.5
Typ.
2.5
0
Max.
2.563
2.5
Unit2
mV/G
%
SensTA
Measured using 400 G, TA = 25°C
TA = 25°C to 150°C
TA = -40°C to 25°C
Sensitivity Drift through
Temperature Range
ΔSensTC
%
-2.5
0
2.5
Sensitivity Drift Due to
Package Hysteresis
TA = 25°C, after temperature cycling, 25°C to 150°C and back
to 25°C
∆SensPKG
%
–
±1.25
–
TA = –40°C to 150°C, shift after AEC Q100 grade 0 qualification
testing
Sensitivity Drift Over Lifetime4 ∆SensLIFE
%
–
–
–
±1
–
–
–
TA = 25°C, CL = 1 nF
mVP-P
mVRMS
7.875
1.25
Noise
VN
TA = 25°C, CL = 1 nF
VOUT(Q)TA TA = 25°C
V
V
V
2.490
2.490
2.490
2.500
2.500
2.500
2.510
2.510
2.510
Quiescent Output Voltage5
VOUT(Q)HT
VOUT(Q)LT
TA = 25°C to 150°C
TA = –40°C to 25°C
Quiescent Output Voltage Drift
Over Lifetime4
TA = –40°C to 150°C, shift after AEC Q100 grade 0 qualification
testing
∆VOUT(Q)LIFE
mV
–
±2
–
1See Characteristic Performance Data section for parameter distributions across temperature range.
21 G (gauss) = 0.1 mT (millitesla).
3This parameter may drift a maximum of ΔSensLIFE over lifetime.
4Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, cannot
be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information.
5This parameter may drift a maximum of ΔVOUT(Q)LIFE over lifetime.
Allegro MicroSystems, LLC
115 Northeast Cutoff
8
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
A1366LKT-5-T PERFORMANCE CHARACTERISTICS1: TA = –40°C to 150°C, CBYPASS = 0.1 µF, VCC = 5 V, unless
otherwise specified
Characteristic
Sensitivity3
Symbol
Test Conditions
Min.
4.875
-2.5
Typ.
Max.
5.125
2.5
Unit2
mV/G
%
SensTA
Measured using 200 G, TA = 25°C
5
0
0
TA = 25°C to 150°C
TA = -40°C to 25°C
Sensitivity Drift through
Temperature Range
ΔSensTC
%
-2.5
2.5
Sensitivity Drift Due to
Package Hysteresis
TA = 25°C, after temperature cycling, 25°C to 150°C and back
to 25°C
∆SensPKG
%
–
±1.25
–
TA = –40°C to 150°C, shift after AEC Q100 grade 0 qualification
testing
Sensitivity Drift Over Lifetime4 ∆SensLIFE
%
–
–
–
±1
15.75
2.5
–
–
–
TA = 25°C, CL = 1 nF
mVP-P
mVRMS
Noise
VN
TA = 25°C, CL = 1 nF
VOUT(Q)TA TA = 25°C
V
V
V
2.490
2.490
2.490
2.500
2.500
2.500
2.510
2.510
2.510
Quiescent Output Voltage5
VOUT(Q)HT
VOUT(Q)LT
TA = 25°C to 150°C
TA = –40°C to 25°C
Quiescent Output Voltage Drift
Over Lifetime4
TA = –40°C to 150°C, shift after AEC Q100 grade 0 qualification
testing
∆VOUT(Q)LIFE
mV
–
±2
–
1See Characteristic Performance Data section for parameter distributions across temperature range.
21 G (gauss) = 0.1 mT (millitesla).
3This parameter may drift a maximum of ΔSensLIFE over lifetime.
4Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, cannot
be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information.
5This parameter may drift a maximum of ΔVOUT(Q)LIFE over lifetime.
Allegro MicroSystems, LLC
115 Northeast Cutoff
9
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
A1366LKT-10-T PERFORMANCE CHARACTERISTICS1: TA = –40°C to 150°C, CBYPASS = 0.1 µF, VCC = 5 V, unless
otherwise specified
Characteristic
Sensitivity3
Symbol
Test Conditions
Min.
9.75
-2.5
Typ.
10
0
Max.
10.25
2.5
Unit2
mV/G
%
SensTA
Measured using 100 G, TA = 25°C
TA = 25°C to 150°C
TA = -40°C to 25°C
Sensitivity Drift through
Temperature Range
ΔSensTC
%
-2.5
0
2.5
Sensitivity Drift Due to
Package Hysteresis
TA = 25°C, after temperature cycling, 25°C to 150°C and back
to 25°C
∆SensPKG
%
–
±1.25
–
TA = –40°C to 150°C, shift after AEC Q100 grade 0 qualification
testing
Sensitivity Drift Over Lifetime4 ∆SensLIFE
%
–
–
–
±1
31.5
5
–
–
–
TA = 25°C, CL = 1 nF
mVP-P
mVRMS
Noise
VN
TA = 25°C, CL = 1 nF
VOUT(Q)TA TA = 25°C
V
V
V
2.485
2.485
2.485
2.500
2.500
2.500
2.515
2.515
2.515
Quiescent Output Voltage5
VOUT(Q)HT
VOUT(Q)LT
TA = 25°C to 150°C
TA = –40°C to 25°C
Quiescent Output Voltage Drift
Over Lifetime4
TA = –40°C to 150°C, shift after AEC Q100 grade 0 qualification
testing
∆VOUT(Q)LIFE
mV
–
±2
–
1See Characteristic Performance Data section for parameter distributions across temperature range.
21 G (gauss) = 0.1 mT (millitesla).
3This parameter may drift a maximum of ΔSensLIFE over lifetime.
4Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, cannot
be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information.
5This parameter may drift a maximum of ΔVOUT(Q)LIFE over lifetime.
Allegro MicroSystems, LLC
115 Northeast Cutoff
10
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
Characteristic Performance Data
Response Time (tRESPONSE
)
400 G excitaꢀon signal with 10%-90% rise time = 1 µs
Sensiꢀvity = 2 mV/G, CBYPASS=0.1 µF, CL=1 nF
Input = 400 G Excitaꢀon Signal
80% of Input
Output (VOUT, mV)
tRESPONSE = 3.7 µs
80% of Output
Propagaꢀon Delay (tPD)
400 G excitaꢀon signal with 10%-90% rise ꢀme = 1 µs
Sensiꢀvity = 2 mV/G, BYPASS=0.1 µF, L=1 nF
C
C
Input = 400 G Excitaꢀon Signal
Output (VOUT, mV)
tPD = 2.2 µs
20% of Input
20% of Output
Allegro MicroSystems, LLC
115 Northeast Cutoff
11
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
Rise Time (tR)
400 G excitaꢀon signal with 10%-90% rise ꢀme = 1 µs
Sensiꢀvity = 2 mV/G,
C
BYPASS=0.1 µF,
C
L=1 nF
Input = 400 G Excitaꢀon Signal
Output (VOUT, mV)
90% of Output
tR = 3.6 µs
10% of Output
Power-On Time(tPO)
400 G constant excitaꢀon signal, with VCC 10%-90% rise ꢀme = 1.5 µs
Sensiꢀvity = 2 mV/G, BYPASS= Open, L=1 nF
C
C
Supply (VCC, V)
VCC(min)
t
PO = 78 µs
Output (VOUT, V)
90% of Output
Allegro MicroSystems, LLC
115 Northeast Cutoff
12
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
UVLO Enable Time (tUVLOE
)
VCC 5 V-3 V fall ꢀme = 1.5 µs
Sensiꢀvity = 2 mV/G, CBYPASS= Open, CL=1 nF
VUVLOL
Supply (VCC, V)
tUVLOE = 63.6 µs
Output (VOUT, V)
Output = 0 V
UVLO Disable Time (tUVLOD
)
VCC 3 V-5 V recovery ꢀme
= 1.5 µs
Sensiꢀvity = 2 mV/G,
C
BYPASS= Open,CL=1 nF
Supply (VCC, V)
VCC(min)
t
UVLOD = 12 µs
90% of Output
Output (VOUT, V)
Allegro MicroSystems, LLC
115 Northeast Cutoff
13
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
Characteristic Definitions
Power-On Time (tPO) When the supply is ramped to its operat-
ing voltage, the device requires a finite time to power its internal
components before responding to an input magnetic field.
Applied Magnetic Field
(%)
90
Power-On Time, tPO , is defined as: the time it takes for the output
voltage to settle within ±10% of its steady state value under an
applied magnetic field, after the power supply has reached its
minimum specified operating voltage, VCC(min), as shown in
figure 1.
Transducer Output
Rise Time, tR
20
10
0
Temperature Compensation Power-On Time (tTC) After Power-
On Time, tPO , elapses, tTC is also required before a valid tem-
perature compensated output.
t
Propagation Delay, tPD
Propagation Delay (tPD) The time interval between a) when the
applied magnetic field reaches 20% of it’s final value, and b)
when the output reaches 20% of its final value (see figure 2).
Figure 2: Propagation Delay and Rise Time definitions
Rise Time (tR) The time interval between a) when the sensor IC
reaches 10% of its final value, and b) when it reaches 90% of its
final value (see Figure 2).
Applied Magnetic Field
(%)
80
Response Time (tRESPONSE) The time interval between a) when
the applied magnetic field reaches 80% of its final value, and b)
when the sensor reaches 80% of its output corresponding to the
applied magnetic field (see Figure 3).
Transducer Output
Quiescent Voltage Output (VOUT(Q)) In the quiescent state (no
Response Time, t
RESPONSE
significant magnetic field: B = 0 G), the output, VOUT(Q) , has a
V
VCC
VCC(typ.)
0
VOUT
t
90% VOUT
Figure 3: Response Time definition
VCC(min.)
tPO
t1
t2
t1= time at which power supply reaches
minimum specified operating voltage
t2= time at which output voltage settles
within ±10% of its steady state value
under an applied magnetic field
0
+t
Figure 1: Power-on Time definition
Allegro MicroSystems, LLC
115 Northeast Cutoff
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Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
constant ratio to the supply voltage, VCC , throughout the entire
operating ranges of VCC and ambient temperature, TA.
Sens
BPOS2
1–
LinERRPOS
,
,
=
=
100%
100%
×
×
SensBPOS1
Sensitivity (Sens) The presence of a south polarity magnetic
field, perpendicular to the branded surface of the package face,
increases the output voltage from its quiescent value toward the
supply voltage rail. The amount of the output voltage increase is
proportional to the magnitude of the magnetic field applied.
Sens
BNEG2
1–
LinERRNEG
(4)
(5)
Sens
BNEG1
where:
|VOUT(Bx)
V
|
–
OUT(Q)
Conversely, the application of a north polarity field decreases the
output voltage from its quiescent value. This proportionality is
specified as the magnetic sensitivity, Sens (mv/G), of the device,
and it is defined as:
SensBx
,
=
Bx
and BPOSx and BNEGx are positive and negative magnetic
fields, with respect to the quiescent voltage output such that
|BPOS2| = 2 × |BPOS1| and |BNEG2| = 2 × |BNEG1|.
VOUT(BPOS) – VOUT(BNEG)
(1)
Sens
,
Then:
=
BPOS – BNEG
(6)
LinERR max(LinERRPOS , LinERRNEG
)
.
=
where BPOS and BNEG are two magnetic fields with opposite
polarities.
Symmetry Sensitivity Error (SymERR ) The magnetic sensitiv-
ity of an A1366 device is constant for any two applied magnetic
fields of equal magnitude and opposite polarities. Symmetry
Error, SymERR (%), is measured and defined as:
Sensitivity Drift Through Temperature Range (ΔSensTC
)
Second order sensitivity temperature coefficient effects cause the
magnetic sensitivity, Sens, to drift from its expected value over
the operating ambient temperature range, TA. The Sensitivity
Drift Through Temperature Range, ∆SensTC , is defined as:
SensBPOS
SensBNEG
(7)
1–
SymERR
,
100%
=
×
SensTA – SensEXPECTED(TA)
∆SensTC
.
100%
=
(2)
×
SensEXPECTED(TA)
where SensBx is as defined in equation 7, and BPOSx and
Sensitivity Drift Due to Package Hysteresis (ΔSensPKG ) Pack- BNEGx are positive and negative magnetic fields such that
age stress and relaxation can cause the device sensitivity at TA =
25°C to change during and after temperature cycling. The sensi-
tivity drift due to package hysteresis, ∆SensPKG, is defined as:
Sens(25°C)2 – Sens(25°C)1
|BPOSx| = |BNEGx|.
Ratiometry Error (RatERR ) The A1366 device features ratio-
metric output. This means that the Quiescent Voltage Output,
VOUT(Q), and magnetic sensitivity, Sens, are proportional to the
Supply Voltage, VCC. In other words, when the supply voltage
increases or decreases by a certain percentage, each characteristic
also increases or decreases by the same percentage. Error is the
difference between the measured change in the supply voltage
relative to 5 V, and the measured change in each characteristic.
,
∆SensPKG
100%
(3)
=
×
Sens(25°C)1
where Sens(25°C)1 is the programmed value of sensitivity at TA
= 25°C, and Sens(25°C)2 is the value of sensitivity at TA = 25°C,
after temperature cycling TA up to 150°C and back to 25°C.
Linearity Sensitivity Error (LinERR ) The A1366 is designed to
provide a linear output in response to a ramping applied magnetic
field. Consider two magnetic fields, B1 and B2. Ideally, the sen-
sitivity of a device is the same for both fields, for a given supply
voltage and temperature. Linearity error is present when there is a
difference between the sensitivities measured at B1 and B2.
The ratiometric error in Quiescent Voltage Output,
RatERRVOUT(Q) (%), for a given supply voltage, VCC, is defined
as:
VOUT(Q)(VCC) / V
OUT(Q)(5V)
(8)
1–
RatERRVOUT(Q)
=
100%
×
VCC / 5 V
Linearity Error is calculated separately for the positive
(LinERRPOS) and negative (LinERRNEG) applied magnetic fields.
Linearity Error (%) is measured and defined as:
The ratiometric error in magnetic sensitivity, RatERRSens (%), for
a given Supply Voltage, VCC, is defined as:
Allegro MicroSystems, LLC
115 Northeast Cutoff
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1.508.853.5000; www.allegromicro.com
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
Sens(VCC) / Sens
(5V)
1–
RatERRSens
.
100%
=
(9)
×
VCC / 5 V
Power-On Reset Voltage (VPOR) On power-up, to initialize to
a known state and avoid current spikes, the A1366 is held in
a Reset state. The Reset signal is disabled when VCC reaches
VUVLOH and time tPORR has elapsed, allowing the output voltage
to go from a high impedance state into normal operation. Dur-
ing power-down, the Reset signal is enabled when VCC reaches
VPORL, causing the output voltage to go into a high impedance
state. (Note that detailed description of POR and UVLO opera-
tion can be found in the Functional Description section).
Power-On Reset Release Time (tPORR) When VCC rises to
VPORH , the Power-On Reset Counter starts. The A1366 output
voltage will transition from a high impedance state to normal
operation only when the Power-On Reset Counter has reached
tPORR and VCC has exceeded VUVLOH
.
Undervoltage Lockout Threshold (VUVLO) If VCC drops below
VUVLOL output voltage will be locked to GND. If VCC starts ris-
ing, the A1366 will come out of the Lock state when VCC reaches
VUVLOH
.
UVLO Enable/Disable Delay Time (tUVLO) When a falling VCC
reaches VUVLOL, time tUVLOE is required to engage Undervoltage
Lockout state. When VCC rises above VUVLOH , time tUVLOD is
required to disable UVLO and have a valid output voltage.
Broken Wire Voltage (VBRK ) If the GND pin is disconnected
(broken wire event), the output voltage will go to VBRK(HIGH) (if
a load resistor is connected to VCC) or to VBRK(LOW) (if a load
resistor is connected to GND).
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Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
Functional Description
function will be enabled and the ouput will be pulled near GND
[6]. If VCC exceeds VUVLOL before the UVLO Enable Counter
reaches 64 µs [5'], the output will continue to be VCC/2.
Power-On Reset (POR) and Undervoltage Lock-Out
(UVLO) Operation
The descriptions in this section assume: temperature = 25°C, no
output load (RL, CL), and no significant magnetic field is present.
• Coming out of UVLO While UVLO is enabled [6], if
VCC exceeds VUVLOH [7], UVLO will be disabled after
tUVLOD =14 µs, and the output will be VCC / 2 [8].
• Power-Up At power-up, as VCC ramps up, the output is in a
high impedance state. When VCC crosses VPORH (location [1]
in Figure 4 and [1'] in Figure 5), the POR Release counter starts
counting for tPORR= 64 µs. At this point, if VCC exceeds VUVLOH
= 4 V [2'], the output will go to VCC / 2 after tUVLOD = 14 µs [3'].
If VCC does not exceed VUVLOH = 4 V [2], the output will stay in
the high impedance state until VCC reaches VUVLOH = 4 V [3] and
then will go to VCC / 2 after tUVLOD = 14 µs [4].
• Power-Down As VCC ramps down below VUVLOL [6’, 9], the
UVLO Enable Counter will start counting. If VCC is higher than
VPORL = 2.3 V when the counter reaches tUVLOE = 64 µs, the
UVLO function will be enabled and the ouput will be pulled
near GND [10]. The output will enter a high impedance state as
VCC goes below VPORL [11]. If VCC falls below VPORL before the
UVLO Enable Couner reaches 64 µs, the output will transition
directly into a high impedance state [7'].
• VCC drops below VCC(min)= 4.5 V If VCC drops below VUVLOL
[4', 5], the UVLO Enable Counter starts counting. If VCC is still
below VUVLOL when counter reaches tUVLOE = 64 µs, the UVLO
Allegro MicroSystems, LLC
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Worcester, Massachusetts 01615-0036 U.S.A.
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Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
V
CC
11
10
9
1
2
3
6
5
7
8
4
5.0
V
4.0
3.5
2.6
2.3
UVLOH
UVLOL
PORH
PORL
V
V
V
t
=
tUVLOE
=
UVLOE
64 µs
64 µs
GND
Time
Time
V
Slope =
/2
OUT
2.5
V
CC
t
=
PORR
t
=
t
=
UVLOD
UVLOD
64 µs
14 µs
14 µs
GND
High Impedance
High Impedance
Figure 4: POR and UVLO Operation: Slow Rise Time case
V
CC
1’ 2’
4’ 5’
7’
6’
3’
5.0
V
4.0
3.5
2.6
UVLOH
V
UVLOL
V
V
PORH
PORL
2.3
<64 µs
GND
Time
Time
V
OUT
t
=
PORR
Slope =
/2
<64 µs
Slope =
/2
64 µs
V
CC
V
CC
2.5
t
= 14 µs
UVLOD
GND
High Impedance
Figure 5: POR and UVLO Operation: Fast Rise Time case
High Impedance
Allegro MicroSystems, LLC
115 Northeast Cutoff
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Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
If the ground wire is reconnected, A1366 will resume normal
Detecting Broken Ground Wire
operation.
If the GND pin is disconnected, node A becoming open
(Figure 6), the VOUT pin will go to a high impedance state. Out-
put voltage will go to VBRK(HIGH) if a load resistor RL(PULLUP) is
connected to VCC or to VBRK(LOW) if a load resistor RL(PULLDWN)
is connected to GND. The device will not respond to any applied
magnetic field.
VCC
VCC
VCC
R
L(PULLUP)
VCC
VOUT
VCC
VOUT
A1366
A1366
R
L(PULLDWN)
GND
A
GND
A
Connecting VOUT to RL(PULLUP)
Connecting VOUT to RL(PULLDWN)
Figure 6: Connections for Detecting Broken Ground Wire
Typical Application Drawing
V+
VCC
VOUT
A1366
RL(PULLDWN)
CBYPASS
CL(typ)
GND
Allegro MicroSystems, LLC
115 Northeast Cutoff
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Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
original spectrum at base band, while the DC offset becomes a
high-frequency signal. The magnetic-sourced signal then can pass
through a low-pass filter, while the modulated DC offset is sup-
pressed. This high-frequency operation allows a greater sampling
rate, which results in higher accuracy and faster signal-processing
capability. This approach desensitizes the chip to the effects
of thermal and mechanical stresses, and produces devices that
have extremely stable quiescent Hall output voltages and precise
recoverability after temperature cycling. This technique is made
possible through the use of a BiCMOS process, which allows the
use of low-offset, low-noise amplifiers in combination with high-
density logic integration and a proprietary, dynamic notch filter.
The new Allegro filtering techniques are far more effective at
suppressing chopper induced signal noise compared to the previ-
ous generation of Allegro chopper stabilized devices.
Chopper Stabilization Technique
When using Hall-effect technology, a limiting factor for total
accuracy is the small signal voltage developed across the Hall
element. This voltage is disproportionally small relative to the
offset that can be produced at the output of the Hall sensor. This
makes it difficult to process the signal while maintaining an accu-
rate, reliable output over the specified operating temperature and
voltage ranges. Chopper stabilization is a unique approach used
to minimize Hall offset on the chip.
The Allegro technique removes key sources of the output drift
induced by thermal and mechanical stresses. This offset reduction
technique is based on a signal modulation-demodulation process.
The undesired offset signal is separated from the magnetic field-
induced signal in the frequency domain, through modulation. The
subsequent demodulation acts as a modulation process for the
offset, causing the magnetic field-induced signal to recover its
Concept of Chopper Stabilization
Regulator
Clock/Logic
Hall Element
Amp
Anti-Aliasing Tuned
LP Filter
Filter
Allegro MicroSystems, LLC
115 Northeast Cutoff
20
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
Package KT, 4-Pin SIP
+0.08
–0.05
5.21
B
10°
E
F
2.60
+0.08
–0.05
1.00
1.00
F
F
Mold Ejector
Pin Indent
+0.08
3.43
–0.05
NNNN
Branded
Face
YYWW
0.54
REF
1
A
0.89
MAX
Standard Branding Reference View
C
N = Device part number
Y = Last two digits of year of manufacture
W = Week of manufacture
12.14±0.05
For Reference Only; not for tooling use (reference DWG-9202)
Dimensions in millimeters
+0.08
–0.05
+0.08
–0.05
0.41
0.20
Dimensions exclusive of mold flash, gate burrs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
Dambar removal protrusion (16X)
A
B
C
D
E
Gate and tie bar burr area
0.89
MAX
Branding scale and appearance at supplier discretion
0.54
REF
Thermoplastic Molded Lead Bar for alignment during shipment
Active Area Depth 0.37 mm REF
1
2
3
4
+0.08
1.50
–0.05
D
F
Hall element, not to scale
+0.08
–0.05
1.27 NOM
1.00
+0.08
–0.05
5.21
Allegro MicroSystems, LLC
115 Northeast Cutoff
21
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Low Noise, High Precision, Factory-Programmed
Linear Hall Effect Sensor IC with Advanced Temperature Compensation
And High Bandwidth (120 kHz) Analog Output
A1366
Revision History
Current
Revision Date
Revision
Description of Revision
–
May 1, 2014
Initial Release
Copyright ©2014, Allegro MicroSystems, LLC
Allegro MicroSystems, LLC reserves the right to make, from time to time, such departures from the detail specifications as may be required to
permit improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that
the information being relied upon is current.
Allegro’s products are not to be used in any devices or systems, including but not limited to life support devices or systems, in which a failure of
Allegro’s product can reasonably be expected to cause bodily harm.
The information included herein is believed to be accurate and reliable. However, Allegro MicroSystems, LLC assumes no responsibility for its
use; nor for any infringement of patents or other rights of third parties which may result from its use.
Allegro MicroSystems, LLC
115 Northeast Cutoff
22
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
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