AP640R7-00 [ALPHA]
24-35 GHz GaAs MMIC High Power SPDT Reflective PIN Switch; 24-35 GHz的砷化镓MMIC高功率SPDT反光PIN开关
| 型号： | AP640R7-00 |
| 厂家： | 
ALPHA INDUSTRIES |
| 描述： | 24-35 GHz GaAs MMIC High Power SPDT Reflective PIN Switch |
| 文件： | 总2页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
24–35 GHz GaAs MMIC
High Power SPDT Reflective PIN Switch
AP640R7-00
Chip Outline
Features
I Broad Bandwidth
I Low Loss, < 1.5 dB
1.100
0.988
0.398
I High Isolation, > 28 dB
I Return Loss, < -12 dB
I Fast Switching Speed, < 4 ns
I High Power Handling, 40 dBm Peak,
0.000
36 dBm CW
Description
Dimensions indicated in mm.
All pads are ≥ 0.07 mm wide.
Chip thickness = 0.1 mm.
Alpha’s high power, single pole, double throw PIN diode
switch is a robust, high performance switch. It is ideal for
low loss, high isolation applications, particularly where
broad bandwidths and high power handling is required.
The chip uses Alpha’s proven PIN diode technology, and
is based upon MBE layers for the highest uniformity and
repeatability. The diodes employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
an epoxy die attach process. The GaAs MMIC employs
a specialized high power PIN diode in each arm and an
on-chip bias network. Chips are measured on a 100%
basis at 24, 28, 31 and 35 GHz for insertion loss, isolation,
input and output return losses, and also at DC for diode
breakdown voltage and turn on voltage.
Absolute Maximum Ratings
Characteristic
Operating Temperature
Storage Temperature
DC Reverse Bias
Value
-55°C to +125°C
-65°C to +150°C
-100 V (-20 mA)
+2.6 V (100 mA)
15 W
DC Forward Bias
P
IN
Electrical Specifications at 25°C
2
Parameter
Symbol
IL
Condition
Min.
Typ.
1.2
30
16
17
2
Max.
Unit
dB
Insertion Loss
Isolation
F = 24, 28, 31, 35 GHz
F = 24, 28, 31, 35 GHz
F = 24, 28, 31, 35 GHz
F = 24, 28, 31, 35 GHz
V = -50 V
1.5
ISO
28
dB
Input Return Loss
RL
12
14
20
dB
I
Output Return Loss (Insertion State)
Leakage Current
RL
I
dB
O
µA
DD
1
Switching Speed
4
ns
1
Output Power at 1 dB Compression
P
1 dB
F = 35 GHz
36
dBm
1. Not measured on a 100% basis.
2.Typical represents the median parameter value across the specified
frequency range for the median chip.
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
1
Specifications subject to change without notice. 2/00A
24–35 GHz GaAs MMIC High Power SPDT Reflective PIN Switch
AP640R7-00
Typical Performance Data
0
-10
-20
-30
-40
0
0
-10
-20
-30
-40
0
Insertion Loss
Insertion Loss
-1
-2
-3
-4
-1
-2
-3
-4
Input Return Loss
Input Return Loss
Output Return Loss
Output Return Loss
Isolation
Isolation
15
20
25
30
35
40
-26.0
-5.0
-3.5
-1.0
0.0
Frequency (GHz)
Reverse Bias Voltage (V)
Performance vs. DC Bias
F = 28 GHz, Forward Current = 20 mA
Performance vs. Frequency
Bias Conditions: I = 20 mA, V = -3.5 V
F
R
0
-10
-20
-30
-40
0
Truth Table
B
B
J –J
1 2
1
2
Insertion Loss
Input Return Loss
Output Return Loss
-1
-2
-3
-4
+20 mA
-5 V
Insertion Loss
Isolation
-5 V
+20 mA
Isolation
Circuit Schematic
B1
B2
1
2
5
10
20
40
Forward Current (mA)
Performance vs. DC Bias
J3
J2
F = 28 GHz, Reverse Voltage = -3.5 V
Bias Arrangement
J1
“ON ARM”
“OFF ARM”
-5 V (~ 2 µA)
+20 mA (~ 2.50 V)
RESISTOR
RESISTOR
B1
B2
J3
J2
J1
2
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 2/00A
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