AS7C256A-15TIN [ALSC]

5V 32K X 8 CMOS SRAM (Common I/O); 5V 32K ×8 CMOS SRAM (通用I / O)
AS7C256A-15TIN
型号: AS7C256A-15TIN
厂家: ALLIANCE SEMICONDUCTOR CORPORATION    ALLIANCE SEMICONDUCTOR CORPORATION
描述:

5V 32K X 8 CMOS SRAM (Common I/O)
5V 32K ×8 CMOS SRAM (通用I / O)

存储 内存集成电路 静态存储器 光电二极管 ISM频段
文件: 总9页 (文件大小:249K)
中文:  中文翻译
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September 2004  
AS7C256A  
®
5V 32K X 8 CMOS SRAM (Common I/O)  
Features  
• TTL-compatible, three-state I/O  
• 28-pin JEDEC standard packages  
- 300 mil SOJ  
• Pin compatible with AS7C256  
• Industrial and commercial temperature options  
• Organization: 32,768 words × 8 bits  
• High speed  
- 10/12/15/20 ns address access time  
- 5, 6, 7, 8 ns output enable access time  
• Very low power consumption: ACTIVE  
- 412.5 mW max @ 10 ns  
- 8 × 13.4 mm TSOP 1  
• ESD protection 2000 volts  
• Latch-up current 200 mA  
• 2.0V Data retention  
• Very low power consumption: STANDBY  
- 11 mW max CMOS I/O  
• Easy memory expansion with CE and OE inputs  
Logic block diagram  
Pin arrangement  
28-pin TSOP 1 (8×13.4 mm)  
V
28-pin SOJ (300 mil)  
CC  
GND  
Input buffer  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
1
2
3
4
5
6
7
8
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
V
CC  
WE  
A13  
A8  
A9  
A11  
OE  
OE  
A11  
A9  
1
A10  
CE  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
2
3
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
GND  
I/O2  
I/O1  
I/O0  
A0  
A0  
A1  
A8  
4
I/O7  
I/O0  
A13  
WE  
5
6
A2  
A3  
A4  
A5  
A6  
A7  
256 X 128 X 8  
Array  
V
7
CC  
8
A14  
A12  
A7  
AS7C256A  
9
A10  
CE  
10  
11  
12  
13  
14  
9
(262,144)  
A6  
A5  
A0  
10  
11  
12  
13  
14  
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
A4  
A1  
A2  
I/O0  
I/O1  
I/O2  
GND  
A3  
17  
16  
15  
WE  
OE  
CE  
Column decoder  
Control  
circuit  
A
8
A
9
A A A A A  
10 11 12 13 14  
Selection guide  
-10  
10  
5
-12  
12  
6
-15  
-20  
Unit  
ns  
Maximum address access time  
Maximum output enable access time  
Maximum operating current  
15  
7
20  
8
ns  
75  
2
70  
2
65  
2
60  
2
mA  
mA  
Maximum CMOS standby current  
9/24/04; v.1.2  
Alliance Semiconductor  
P. 1 of 9  
Copyright © Alliance Semiconductor. All rights reserved.  
AS7C256A  
®
Functional description  
The AS7C256A is a 5.0V high-performance CMOS 262,144-bit Static Random-Access Memory (SRAM) device organized  
as 32,768 words × 8 bits. It is designed for memory applications requiring fast data access at low voltage, including  
TM  
TM  
Pentium , PowerPC , and portable computing. Alliance’s advanced circuit design and process techniques permit 5.0V  
operation without sacrificing performance or operating margins.  
The device enters standby mode when CE is high. CMOS standby mode consumes 11 mW. Normal operation offers 75%  
power reduction after initial access, resulting in significant power savings during CPU idle, suspend, and stretch mode.  
Equal address access and cycle times (t , t , t ) of 10/12/15/20 ns with output enable access times (t ) of 5, 6, 7, 8 ns  
AA RC WC  
OE  
are ideal for high-performance applications. The chip enable (CE) input permits easy memory expansion with multiple-bank  
memory organizations.  
A write cycle is accomplished by asserting chip enable (CE) and write enable (WE) LOW. Data on the input pins I/O0-I/O7  
is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should  
drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE).  
A read cycle is accomplished by asserting chip enable (CE) and output enable (OE) LOW, with write enable (WE) high. The  
chip drives I/O pins with the data word referenced by the input address. When chip enable or output enable is high, or write  
enable is low, output drivers stay in high-impedance mode.  
All chip inputs and outputs are TTL-compatible. Operation is from a single 5.0 ±0.5V supply. The AS7C256A is packaged  
in high volume industry standard packages.  
Absolute maximum ratings  
Parameter  
Symbol  
Min  
–0.5  
–0.5  
Max  
Unit  
V
Voltage on V relative to GND  
V
V
+7.0  
CC  
t1  
t2  
D
Voltage on any pin relative to GND  
Power dissipation  
V
+ 0.5  
V
CC  
P
1.0  
W
o
Storage temperature (plastic)  
T
–65  
–55  
+150  
+125  
20  
C
stg  
bias  
o
Ambient temperature with V applied  
T
C
CC  
DC current into outputs (low)  
I
mA  
OUT  
Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional  
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to  
absolute maximum rating conditions for extended periods may affect reliability.  
Truth table  
CE  
H
L
WE  
X
OE  
X
Data  
Mode  
Standby (I , I  
High Z  
High Z  
)
SB SB1  
H
H
Output disable (I  
)
CC  
L
H
L
D
D
Read (I  
)
CC  
OUT  
IN  
L
L
X
Write (I  
)
CC  
Key: X = Don’t care, L = Low, H = High  
9/24/04; v.1.2  
Alliance Semiconductor  
P. 2 of 9  
AS7C256A  
®
Recommended operating conditions  
Parameter  
Symbol  
Min  
4.5  
2.2  
-0.5  
0
Typical  
Max  
5.5  
+0.5  
Unit  
V
Supply voltage  
Input voltage  
V
5.0  
CC  
**  
V
V
V
IH  
CC  
*
V
0.8  
70  
85  
V
IL  
o
commercial  
industrial  
T
C
A
Ambient operating temperature  
o
T
–40  
C
A
*
**  
VIL min = –1.0V for pulse width less than 5ns.  
VIH max = VCC + 2.0V for pulse width less than 5ns.  
DC operating characteristics (over the operating range)1  
-10  
-12  
-15  
-20  
Parameter Sym  
Test conditions  
Min Max Min Max Min Max Min Max Unit Notes  
Input leakage  
current  
V
= Max,  
CC  
|I |  
1
1
1
1
1
1
1
1
µA  
µA  
LI  
V = GND to V  
in CC  
Outputleakage  
current  
V
V
= Max,  
CC  
|I  
|
LO  
CC  
SB  
= GND to V  
OUT  
CC  
Operating  
power supply  
current  
V
= Max, CE < V  
IL  
CC  
I
I
I
75  
45  
-
70  
45  
65  
40  
60  
40  
mA  
mA  
f = f , I  
= 0mA  
Max OUT  
V
f = f  
= Max, CE > V  
CC  
IH  
Max  
Standby power  
supply current  
V
V
V
= Max, CE > V –0.2V  
< 0.2V or  
CC  
CC  
2.0  
2.0  
2.0  
2.0 mA  
SB1  
IN  
IN  
> V –0.2V, f = 0  
CC  
V
V
I
= 8 mA, V = Min  
0.4  
0.4  
0.4  
0.4  
V
V
4
4
OL OL  
CC  
Output voltage  
I
= –4 mA, V = Min  
2.4  
2.4  
2.4  
2.4  
OH OH  
CC  
Capacitance (f = 1MHz, T = room temperature, V = NOMINAL)4  
a
CC  
Signals  
A, CE WE  
I/O  
Parameter  
Input capacitance  
I/O capacitance  
Symbol  
Test conditions  
V = 0V  
Max  
Unit  
pF  
C
,
,
OE  
5
7
IN  
in  
C
V = V = 0V  
pF  
I/O  
in  
out  
9/24/04; v.1.2  
Alliance Semiconductor  
P. 3 of 9  
AS7C256A  
®
Read cycle (over the operating range)2,8  
-10  
-12  
-15  
-20  
Parameter  
Read cycle time  
Symbol Min Max Min Max Min Max Min Max Unit Notes  
t
t
t
t
t
t
t
t
t
t
t
10  
3
3
0
0
10  
10  
5
12  
3
3
0
0
12  
12  
6
15  
3
3
0
0
15  
15  
7
20  
3
3
0
0
20  
20  
8
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
RC  
Address access time  
2
2
AA  
Chip enable (CE) access time  
Output enable (OE) access time  
Output hold from address change  
CE LOW to output in low Z  
CE HIGH to output in high Z  
OE LOW to output in low Z  
OE HIGH to output in high Z  
Power up time  
ACE  
OE  
4
OH  
3,4  
3,4  
3,4  
3,4  
3,4  
3,4  
CLZ  
CHZ  
OLZ  
OHZ  
PU  
3
3
4
5
3
3
4
5
Power down time  
10  
12  
15  
20  
PD  
Key to switching waveforms  
Rising input  
Falling input  
Undefined output/don’t care  
Read waveform 1 (address controlled)2,5,6,8  
t
RC  
Address  
tAA  
t
OH  
D
Data valid  
out  
Read waveform 2 (CE controlled)2,5,7,8  
1
t
RC  
CE  
OE  
t
OE  
t
t
t
OLZ  
OHZ  
CHZ  
t
ACE  
D
out  
Data valid  
t
CLZ  
t
PD  
I
CC  
t
PU  
I
Supply  
current  
SB  
50%  
50%  
9/24/04; v.1.2  
Alliance Semiconductor  
P. 4 of 9  
AS7C256A  
®
Write cycle (over the operating range)9  
-10  
-12  
-15  
-20  
Parameter  
Write cycle time  
Symbol Min Max Min Max Min Max Min Max Unit Notes  
t
t
t
10  
8
8
0
7
0
0
5
0
3
5
12  
8
8
0
8
0
0
6
0
3
6
15  
10  
10  
0
7
20  
12  
12  
0
8
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
WC  
CW  
AW  
Chip enable to write end  
Address setup to write end  
Address setup time  
t
AS  
WP  
WR  
Write pulse width  
t
9
12  
0
Write recovery time  
t
0
Address hold from end of write  
Data valid to write end  
Data hold time  
t
0
0
AH  
t
t
8
10  
0
DW  
t
0
3,4  
3,4  
3,4  
DH  
WZ  
OW  
Write enable to output in high Z  
Output active from write end  
t
3
3
Write waveform 1 (WE controlled)9  
t
WC  
t
t
AH  
AW  
Address  
WE  
t
t
WR  
WP  
t
AS  
t
t
DH  
DW  
D
Data valid  
in  
t
t
WZ  
OW  
D
out  
Write waveform 2 (CE controlled)9  
t
WC  
t
t
AH  
AW  
Address  
t
t
t
CW  
WR  
AS  
CE  
WE  
t
t
DW  
DH  
D
Data valid  
in  
9/24/04; v.1.2  
Alliance Semiconductor  
P. 5 of 9  
AS7C256A  
®
AC test conditions  
- Output load: see Figure B  
- Input pulse level: GND to V See Figure A.  
CC  
- Input rise and fall times: 2 ns. See Figure A.  
- Input and output timing reference levels: 1.5V.  
+5.0V  
Thevenin equivalent  
168  
480  
D
V
out  
CC  
90%  
10%  
90%  
10%  
255  
C10  
D
+1.72V  
out  
2 ns  
Figure A: Input pulse  
GND  
GND  
Figure B: Output load  
Notes  
1
2
3
4
5
6
7
8
9
During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification.  
For test conditions, see AC Test Conditions, Figures A, B.  
These parameters are specified with CL = 5pF, as in Figures B. Transition is measured ±500mV from steady-state voltage.  
This parameter is guaranteed, but not tested.  
WE is High for read cycle.  
CE and OE are Low for read cycle.  
Address valid prior to or coincident with CE transition Low.  
All read cycle timings are referenced from the last valid address to the first transitioning address.  
All write cycle timings are referenced from the last valid address to the first transitioning address.  
10 C=30pF, except on High Z and Low Z parameters, where C=5pF.  
9/24/04; v.1.2  
Alliance Semiconductor  
P. 6 of 9  
AS7C256A  
®
Package diagrams  
28-pin SOJ  
28-pin SOJ  
Min  
in inches  
Max  
D
e
B
0.128  
0.026  
0.095  
0.026  
0.016  
0.007  
0.720  
0.255  
0.295  
0.330  
0.148  
-
A
A1  
A2  
B
b
c
D
E
E1  
E2  
e
A
A1  
E1 E2  
0.105  
0.032  
0.020  
0.010  
0.730  
0.275  
0.305  
0.340  
Seating  
Plane  
b
Pin 1  
c
A2  
E
28-pin TSOP1  
0.050 BSC  
e
b
28-pin TSOP1  
8×13.4 mm  
c
A2  
A
A1  
L
Min  
1.00  
0.05  
0.91  
0.17  
0.10  
11.70  
Max  
1.20  
0.15  
1.05  
0.27  
0.20  
11.90  
A
A1  
A2  
b
c
D
D
Hd  
α
0.55 nominal  
e
E
Hd  
L
7.90  
13.20  
0.50  
0°  
8.10  
13.60  
0.70  
5°  
E
α
9/24/04; v.1.2  
Alliance Semiconductor  
P. 7 of 9  
AS7C256A  
®
Ordering information  
Package / Access time  
Temperature  
10 ns  
12 ns  
15 ns  
20 ns  
Commercial  
Industrial  
AS7C256A-10JC  
AS7C256A-10JI  
AS7C256A-10TC  
AS7C256A-10TI  
AS7C256A-12JC  
AS7C256A-12JI  
AS7C256A-12TC  
AS7C256A-12TI  
AS7C256A-15JC  
AS7C256A-15JI  
AS7C256A-15TC  
AS7C256A-15TI  
AS7C256A-20JC  
AS7C256A-20JI  
AS7C256A-20TC  
AS7C256A-20TI  
Plastic SOJ, 300 mil  
Commercial  
Industrial  
TSOP 8x13.4mm  
Note: Add suffix ‘N’to the above part number for lead free parts. (Ex. AS7C256A-10JIN)  
Part numbering system  
AS7C  
256A  
–XX  
X
C or I  
X
Temperature range:  
C = 0 oC to 70 0C  
I = -40C to 85C  
Packages:  
SRAM prefix Device number Access time  
N= Lead Free Part  
J = SOJ 300 mil  
T = TSOP 8x13.4mm  
9/24/04; v.1.2  
Alliance Semiconductor  
P. 8 of 9  
AS7C256A  
®
®
Alliance Semiconductor Corporation  
2575, Augustine Drive,  
Santa Clara, CA 95054  
Tel: 408 - 855 - 4900  
Copyright © Alliance Semiconductor  
All Rights Reserved  
Part Number: AS7C256A  
Document Version: v.1.2  
Fax: 408 - 855 - 4999  
www.alsc.com  
© Copyright 2003 Alliance Semiconductor Corporation. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered  
trademarks of Alliance. All other brand and product names may be the trademarks of their respective companies. Alliance reserves the right to make  
changes to this document and its products at any time without notice. Alliance assumes no responsibility for any errors that may appear in this document.  
The data contained herein represents Alliance's best data and/or estimates at the time of issuance. Alliance reserves the right to change or correct this data at  
any time, without notice. If the product described herein is under development, significant changes to these specifications are possible. The information in  
this product data sheet is intended to be general descriptive information for potential customers and users, and is not intended to operate as, or provide, any  
guarantee or warrantee to any user or customer. Alliance does not assume any responsibility or liability arising out of the application or use of any product  
described herein, and disclaims any express or implied warranties related to the sale and/or use of Alliance products including liability or warranties related  
to fitness for a particular purpose, merchantability, or infringement of any intellectual property rights, except as express agreed to in Alliance's Terms and  
Conditions of Sale (which are available from Alliance). All sales of Alliance products are made exclusively according to Alliance's Terms and Conditions of  
Sale. The purchase of products from Alliance does not convey a license under any patent rights, copyrights; mask works rights, trademarks, or any other  
intellectual property rights of Alliance or third parties. Alliance does not authorize its products for use as critical components in life-supporting systems  
where a malfunction or failure may reasonably be expected to result in significant injury to the user, and the inclusion of Alliance products in such life-  
supporting systems implies that the manufacturer assumes all risk of such use and agrees to indemnify Alliance against all claims arising from such use.  

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