AS7C3256 [ALSC]
High Performance 32Kx8 CMOS SRAM; 高性能32Kx8 CMOS SRAM
| 型号： | AS7C3256 |
| 厂家： | 
ALLIANCE SEMICONDUCTOR CORPORATION |
| 描述： | High Performance 32Kx8 CMOS SRAM |
| 文件： | 总8页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Performance
32K×8
AS7C256
AS7C256L
CMOS SRAM
32K×8 CMOS SRAM (Common I/O)
FEATURES
•
•
Organization: 32,768 words × 8 bits
• Equal access and cycle times
• Easy memory expansion with CE and OE inputs
• TTL-compatible, three-state I/O
High speed
– 10/12/15/20/25/35 ns address access time
– 3/3/4/5/6/8 ns output enable access time
• 28-pin JEDEC standard packages
•
Low power consumption
– 300 mil PDIP and SOJ
Socket compatible with 7C512 and 7C1024
– Active:
660 mW max (10 ns cycle)
– 330 mil SOIC
– Standby:
11 mW max, CMOS I/O
2.75 mW max, CMOS I/O, L version
– 8×13.4 TSOP
– Very low DC component in active power
2.0V data retention (L version)
• ESD protection > 2000 volts
• Latch-up current > 200 mA
•
LOGIC BLOCK DIAGRAM
PIN ARRANGEMENT
DIP, SOJ, SOIC
A14
A12
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
28
27
26
25
24
23
22
21
20
19
18
Vcc
WE
A13
A8
A9
A11
OE
Vcc
GND
INPUT BUFFER
A10
CE
9
A0
A1
A2
A3
A4
A5
I/O7
I/O0
A0
10
11
12
13
14
I/O7
I/O6
I/O5
I/O4
I/O3
I/O0
I/O1
I/O2
GND
256×128×8
ARRAY
17
16
15
(262,144)
A6
A14
OE
A11
A9
22
23
24
25
26
27
28
1
2
3
4
5
A10
CE
21
TSOP 8×13.4
20
19
18
17
16
15
14
13
12
WE
OE
CE
I/O7
I/O6
I/O5
I/O4
I/O3
COLUMN DECODER
CONTROL
CIRCUIT
A8
A13
WE
Vcc
A
7
A
8
A
9
A A A A
10 11 12 13
AS7C256
A14
A12
A7
A6
A5
GND
I/O2
I/O1
I/O0
A0
11
10
9
AS7C256-01
AS7C256-02
6
7
A4
A3
A1
A2
8
SELECTION GUIDE
7C256-10 7C256-12 7C256-15 7C256-20 7C256-25 7C256-35 Unit
Maximum Address Access Time
Maximum Output Enable Access Time
Maximum Operating Current
10
3
12
3
15
4
20
5
25
6
35
8
ns
ns
120
2.0
0.5
115
2.0
0.5
110
2.0
0.5
100
2.0
0.5
90
2.0
0.5
80
2.0
0.5
mA
mA
mA
Maximum CMOS Standby Current
L
ALLIANCE SEMICONDUCTOR
AS7C256
AS7C256L
FUNCTIONAL DESCRIPTION
The AS7C256 is a high performance CMOS 262,144-bit A write cycle is accomplished by asserting chip enable (CE)
Static Random Access Memory (SRAM) organized as
32,768 words × 8 bits. It is designed for memory applica-
tions where fast data access, low power, and simple interfac-
ing are desired.
and write enable (WE) LOW. Data on the input pins
I/O0-I/O7 is written on the rising edge of WE (write cycle 1)
or CE (write cycle 2). To avoid bus contention, external
devices should drive I/O pins only after outputs have been
disabled with output enable (OE) or write enable (WE).
Equal address access and cycle times (t , t , t ) of
AA RC WC
10/12/15/20/25/35 ns with output enable access times (t
)
OE
A read cycle is accomplished by asserting chip enable (CE)
and output enable (OE) LOW, with write enable (WE)
HIGH. The chip drives I/O pins with the data word refer-
enced by the input address. When chip enable or output
enable is HIGH, or write enable is LOW, output drivers stay
in high-impedance mode.
of 3/3/4/5/6/8 ns are ideal for high performance applica-
tions. A chip enable (CE) input permits easy memory
expansion with multiple-bank memory organizations.
When CE is HIGH the device enters standby mode. The
standard AS7C256 is guaranteed not to exceed 11 mW
power consumption in standby mode; the L version is guar-
anteed not to exceed 2.75 mW, and typically requires only
500 µW. The L version also offers 2.0V data retention, with
maximum power consumption in this mode of 300 µW.
All chip inputs and outputs are TTL-compatible, and opera-
tion is from a single 5V supply. The AS7C256 is packaged
in all high volume industry standard packages.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Voltage on Any Pin Relative to GND
Power Dissipation
V
–0.5
–
+7.0
1.0
V
t
P
W
D
o
Storage Temperature (Plastic)
Temperature Under Bias
DC Output Current
T
T
–55
–10
–
+150
+85
20
C
stg
o
C
bias
I
mA
out
NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
.
TRUTH TABLE
CE
WE
OE
Data
Mode
Standby (I , I
H
L
L
L
X
H
H
L
X
H
L
High Z
High Z
)
SB SB1
Output Disable
Read
D
D
out
in
X
Write
Key: X = Don’t Care, L = LOW, H = HIGH
2
AS7C256
AS7C256L
RECOMMENDED OPERATING CONDITIONS
(T = 0°C to +70°C)
a
Parameter
Symbol
Min
Typ
Max
Unit
V
4.5
5.0
0.0
–
5.5
0.0
V
V
V
V
CC
Supply Voltage
GND
0.0
V
V
2.2
V
+1
CC
IH
IL
Input Voltage
–0.5*
–
0.8
*V min = –3.0V for pulse width less than t /2.
IL
RC
1
DC OPERATING CHARACTERISTICS
(V = 5V±10%, GND = 0V, T = 0°C to +70°C)
CC a
-10
-12
-15
-20
-25
-35
Parameter
Symbol Test Conditions
Min Max Min Max Min Max Min Max Min Max Min Max Unit
Input Leakage
Current
V
V
= Max,
CC
|I |
–
–
1
1
–
–
1
1
–
–
1
1
–
–
1
1
–
–
1
1
–
–
1
1
µA
µA
LI
= GND to V
in
CC
Output Leakage
Current
CE = V , V = Max,
IH CC
V
|I
|
LO
= GND to V
out
CC
–
–
–
–
–
120
115
45
–
–
–
–
–
115
110
40
–
–
–
–
–
110
105
30
–
–
–
–
–
100
95
–
–
–
–
–
90
85
25
20
2.0
–
–
–
–
–
80 mA
75 mA
25 mA
20 mA
2.0 mA
Operating Power
Supply Current
CE = V , f = f
IL
max,
I
CC
I
= 0 mA
out
L
L
30
I
CE = V , f = f
max
SB
IH
Standby
Power Supply
Current
40
35
25
25
CE > V –0.2V, f = 0,
2.0
2.0
2.0
2.0
CC
I
V ≤ 0.2V or
SB1
in
L
–
0.5
–
0.5
–
0.5
–
0.5
–
0.5
–
0.5 mA
V
≥ V –0.2V
in
OL
OH
CC
V
V
I
I
= 8 mA, V = Min
–
0.4
–
–
0.4
–
–
0.4
–
–
0.4
–
–
0.4
–
–
0.4
–
V
V
OL
OH
CC
Output Voltage
= –4 mA, V = Min
2.4
2.4
2.4
2.4
2.4
2.4
CC
2
CAPACITANCE
(f = 1 MHz, T = Room Temperature, V = 5V)
a
CC
Parameter
Symbol
Signals
Test Conditions
Max
Unit
Input Capacitance
I/O Capacitance
C
C
A, CE, WE, OE
I/O
V
V
= 0V
5
7
pF
pF
IN
in
in
= V = 0V
I/O
out
3
AS7C256
AS7C256L
3, 9
READ CYCLE
(V = 5V±10%, GND = 0V, T = 0°C to +70°C)
CC a
-10
-12
-15
-20
-25
-35
Parameter
Symbol Min Max Min Max Min Max Min Max Min Max Min Max Unit Notes
Read Cycle Time
t
t
t
t
t
t
t
t
t
t
t
10
–
–
–
2
3
–
0
–
0
–
–
10
10
3
12
–
–
–
3
3
–
0
–
0
–
–
12
12
3
15
–
–
–
3
3
–
0
–
0
–
–
15
15
4
20
–
–
–
3
3
–
0
–
0
–
–
20
20
5
25
–
–
–
3
3
–
0
–
0
–
–
25
25
6
35
–
–
–
3
3
–
0
–
0
–
–
35
35
8
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
RC
Address Access Time
3
3
AA
Chip Enable (CE) Access Time
Output Enable (OE) Access Time
Output Hold from Address Change
CE LOW to Output in Low Z
CE HIGH to Output in High Z
OE LOW to Output in Low Z
OE HIGH to Output in High Z
Power Up Time
ACE
OE
–
–
–
–
–
–
5
OH
–
–
–
–
–
–
4, 5
4, 5
4, 5
4, 5
4, 5
4, 5
CLZ
CHZ
OLZ
OHZ
PU
3
3
4
5
6
8
–
–
–
–
–
–
3
3
4
5
6
8
–
–
–
–
–
–
Power Down Time
10
12
15
20
25
35
PD
3, 6, 7, 9
TIMING WAVEFORM OF READ CYCLE 1
(Address Controlled)
t
RC
Address
t
t
OH
AA
D
Data Valid
out
3, 6, 8, 9
TIMING WAVEFORM OF READ CYCLE 2
(CE Controlled)
1
t
RC
CE
OE
t
OE
t
t
OHZ
OLZ
t
CHZ
t
ACE
D
out
Data Valid
t
CLZ
t
PD
I
I
CC
t
PU
Supply
Current
SB
50%
50%
AS7C256-04
4
AS7C256
AS7C256L
11
WRITE CYCLE
(V = 5V±10%, GND = 0V, T = 0°C to +70°C)
CC a
-10
-12
-15
-20
-25
-35
Parameter
Symbol Min Max Min Max Min Max Min Max Min Max Min Max Unit Notes
Write Cycle Time
t
t
t
t
t
t
t
t
t
t
10
9
–
–
–
–
–
–
–
–
5
–
12
10
10
0
–
–
–
–
–
–
–
–
5
–
15
12
12
0
–
–
–
–
–
–
–
–
5
–
20
12
12
0
–
–
–
–
–
–
–
–
5
–
20
15
15
0
–
–
–
–
–
–
–
–
5
–
30
20
20
0
–
–
–
–
–
–
–
–
5
–
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
WC
CW
AW
AS
Chip Enable to Write End
Address Setup to Write End
Address Setup Time
9
0
Write Pulse Width
7
8
9
12
0
15
0
17
0
WP
AH
DW
DH
WZ
OW
Address Hold From End of Write
Data Valid to Write End
Data Hold Time
0
0
0
6
6
8
10
0
10
0
15
0
0
0
0
4, 5
4, 5
4, 5
Write Enable to Output in High Z
Output Active from Write End
–
–
–
–
–
–
3
3
3
3
3
3
10, 11
TIMING WAVEFORM OF WRITE CYCLE 1
(WE Controlled)
t
WC
t
t
t
AW
AH
Address
WE
t
WP
t
AS
t
DW
DH
D
Data Valid
in
t
t
WZ
OW
D
out
AS7C256-05
10, 11
t
TIMING WAVEFORM OF WRITE CYCLE 2
(CE Controlled)
WC
t
t
AH
AW
Address
CE
t
t
CW
AS
t
WP
WE
t
t
t
DH
WZ
DW
D
Data Valid
in
D
out
AS7C256-06
5
AS7C256
AS7C256L
DATA RETENTION CHARACTERISTICS
(L Version Only)
Parameter
for Data Retention
Symbol
Test Conditions
Min
Max
Unit
V
V
I
2.0
–
–
V
CC
DR
V
= 2.0V
CC
Data Retention Current
150
–
µA
ns
CCDR
CDR
R
CE ≥ V –0.2V
CC
Chip Enable to Data Retention Time
Operation Recovery Time
Input Leakage Current
t
t
0
V
in ≥ V –0.2V or
CC
t
–
ns
RC
V
in ≤ 0.2V
| I
|
–
1
µA
LI
DATA RETENTION WAVEFORM
(L Version Only)
Data retention mode
DR ≥ 2.0V
V
4.5V
4.5V
V
CC
t
t
R
CDR
V
DR
V
V
CE
IH
IH
AS7C256-07
AC TEST CONDITIONS
– Output load: see Figure B,
Thevenin Equivalent:
except for t
and t
see Figure C.
CLZ
CHZ
168Ω
– Input pulse level: GND to 3.0V. See Figure A.
– Input rise and fall times: 5 ns. See Figure A.
– Input and output timing reference levels: 1.5V.
D
+1.728V
+5V
out
+5V
480Ω
480Ω
D
D
out
out
+3.0V
90%
10%
90%
10%
*including scope
and jig capacitance
255Ω
30 pF*
GND
255Ω
5 pF*
GND
GND
Figure B: Output Load
Figure C: Output Load for t
, t
Figure A: Input Waveform
CLZ CHZ
AS7C256-08
AS7C256-09
AS7C256-10
NOTES
1. During V power-up, a pull-up resistor to V on CE is required to meet I specification.
CC
CC
SB
2. This parameter is sampled and not 100% tested.
3. For test conditions, see AC Test Conditions, Figures A, B, C.
4.
t
and t
are specified with CL = 5pF as in Figure C. Transition is measured ±500mV from steady-state voltage.
CHZ
CLZ
5. This parameter is guaranteed but not tested.
6. WE is HIGH for read cycle.
7. CE and OE are LOW for read cycle.
8. Address valid prior to or coincident with CE transition LOW.
9. All read cycle timings are referenced from the last valid address to the first transitioning address.
10. CE or WE must be HIGH during address transitions.
11. All write cycle timings are referenced from the last valid address to the first transitioning address.
6
AS7C256
AS7C256L
TYPICAL DC AND AC CHARACTERISTICS
Normalized supply current I , I
Normalized supply current I , I
Normalized supply current I
SB1
vs. ambient temperature T
a
CC SB
CC
CC SB
vs. supply voltage V
vs. ambient temperature T
a
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
625
25
I
V
= 5.0V
CC
I
CC
CC
5
1
I
SB
0.2
0.04
I
SB
4.0
4.5
5.0
5.5
–55
–10
35
80
-55
-10
35
80
6.0
6.0
5.0
125
125
5.0
125
Supply voltage (V)
Ambient temperature (°C)
Ambient temperature (°C)
Normalized access time t
Normalized access time t
AA
vs. ambient temperature T
Normalized supply current I
AA
CC
vs. supply voltage V
vs. cycle frequency 1/t , 1/t
RC WC
CC
a
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
T = 25°C
V
= 5.0V
V
= 5.0V
CC
a
CC
T = 25°C
a
4.0
4.5
5.0
5.5
–55
–10
35
80
0
25
50
75
100
Supply voltage (V)
Ambient temperature (°C)
Cycle frequency (MHz)
Output source current I
vs. output voltage V
Output sink current I
Typical access time change ∆t
OH
OL
AA
vs. output voltage V
vs. output capacitive loading
OH
OL
140
120
100
80
140
120
100
80
35
30
25
20
15
10
5
V
= 5.0V
V
= 5.0V
CC
V
= 4.5V
CC
CC
T = 25°C
T = 25°C
a
a
60
60
40
40
20
20
0
0.0
0
0.0
0
1.25
2.5
3.75
1.25
2.5
3.75
0
250
500
750
1000
Output voltage (V)
Output voltage (V)
Capacitance (pF)
AS7C256-11
7
AS7C256
AS7C256L
ORDERING CODES
Package / Access Time
10 ns
12 ns
15 ns
20 ns
25 ns
35 ns
Plastic DIP, 300 mil
AS7C256-10PC
AS7C256L-10PC
AS7C256-12PC
AS7C256L-12PC
AS7C256-15PC
AS7C256L-15PC
AS7C256-20PC
AS7C256L-20PC
AS7C256-25PC
AS7C256L-25PC
AS7C256-35PC
AS7C256L-35PC
Plastic SOJ, 300 mil
Plastic SOIC, 330 mil
TSOP 8×13.4
AS7C256-10JC
AS7C256L-10JC
AS7C256-12JC
AS7C256L-12JC
AS7C256-15JC
AS7C256L-15JC
AS7C256-20JC
AS7C256L-20JC
AS7C256-25JC
AS7C256L-25JC
AS7C256-35JC
AS7C256L-35JC
AS7C256-10SC
AS7C256L-10SC
AS7C256-12SC
AS7C256L-12SC
AS7C256-15SC
AS7C256L-15SC
AS7C256-20SC
AS7C256L-20SC
AS7C256-25SC
AS7C256L-25SC
AS7C256-35SC
AS7C256L-35SC
AS7C256-10TC
AS7C256L-10TC
AS7C256-12TC
AS7C256L-12TC
AS7C256-15TC
AS7C256L-15TC
AS7C256-20TC
AS7C256L-20TC
AS7C256-25TC
AS7C256L-25TC
AS7C256-35TC
AS7C256L-35TC
PART NUMBERING SYSTEM
AS7C
256
X
–XX
X
C
SRAM Prefix
Device Number
Blank
L
= Standard Power
= Low Power
Access Time
Package: P = PDIP 300 mil
J = SOJ 300 mil
Commercial Temperature Range,
0°C to 70 °C
S = SOIC 330 mil
T = TSOP 8×14
REPRESENTATIVES, DISTRIBUTORS, AND SALES OFFICES
DOMESTIC REPS
INDIANA
NEW HAMPSHIRE
SOUTH CAROLINA
CANADA
PUERTO RICO
CC Electro Sales
(317) 921-5000
Tech Trek Ltd.
Mississauga:
(905) 238-0366
Concord Component
(919) 846-3441
Micro-Electronic Comp.
(809) 746-9897
Kitchen & Kutchin Inc.
(617) 229-2660
ALABAMA
Concord Component
(205) 772-8883
KANSAS
CenTech
(816) 358-8100
TAIWAN
Asian Specific Tech.
+886-2-521-2363
SOUTH DAKOTA
D. A. Case Associates
(612) 831-6777
NEW JERSEY
North: ERA Associates
(800) 645-5500
Montreal:
(514) 337-7540
ARIZONA
Competitive Technology
(602) 265-9224
Ottawa:
(613) 599-8787
Puteam International
+886-2-729-0373
KENTUCKY
CC Electro Sales
(317) 921-5000
South: Vantage Sales
(609) 424-6777
TENNESSEE
Concord Component
(205) 772-8883
ARKANSAS
Southern States Marketing
(214) 238-7500
Vancouver:
(604) 276-8735
NEW MEXICO
Competitive Technology
(602) 265-9224
LOUISIANA
Southern States Marketing
North: (214) 238-7500
TEXAS
Southern States Marketing
Austin: (512) 835-5822
Dallas: (214) 238-7500
Houston: (713) 868-5180
Calgary:
(403) 291-6866
DISTRIBUTORS
CALIFORNIA
North: Brooks Technical
(415) 960-3880
All-American
Locations Nationwide
Headquarters:
NEW YORK
NYC: ERA Associates
(516) 543-0510
South: (713) 868-5180
EUROPE
Britcomp Sales
Surrey, England
+44-1932 347077
+44-1932 346256
MAINE
Kitchen & Kutchin Inc.
(617) 229-2660
LA Area: Competitive Tech.
(714) 450-0170
(305) 621-8282
Upstate: Tri-Tech
Rochester
(716) 385-6500
UTAH
Charles Fields & Assoc.
(801) 299-8228
San Diego: ATS
(619) 634-1488
Axis Components
Sunnyvale, CA
(408) 522-9595
MARYLAND
Chesapeake Technology
(301) 236-0530
Munich, Germany
+49-894488496
COLORADO
Technology Sales
(303) 792-8835
Birmingham
(607) 722-3580
VERMONT
Kitchen & Kutchin Inc.
(617) 229-2660
Axis Components
Irvine, CA
(714) 459-5510
Athismons, France
+33-1-69387678
MASSACHUSETTS
Kitchen & Kutchin Inc.
(617) 229-2660
Fishkill
(914) 897-5611
CONNECTICUT
Kitchen & Kutchin Inc.
(203) 239-0212
HONG KONG
Eastele Technology
+85-2-798-8860
VIRGINIA
Chesapeake Technology
(301) 236-0530
Future Electronics
Locations Worldwide
Headquarters:
NORTH CAROLINA
Concord Component
(919) 846-3441
MICHIGAN
Enco Group
(810) 338-8600
DELAWARE
Vantage Sales
(609) 424-6777
(514) 594-7710
INDIA
WASHINGTON
ES/Chase
(206) 823-9535
Priya Electronics, Inc.
San Jose, CA USA
(408) 954-1866
Interface Electronics
Hopkinton, MA
(800) 632-7792
(508) 435-0100
NORTH DAKOTA
D. A. Case Associates
(612) 831-6777
MINNESOTA
D. A. Case Associates
(612) 831-6777
FLORIDA
WEST VIRGINIA
Chesapeake Technology
(301) 236-0530
Micro-Electronic Comp.
Deerfield Beach
(305) 426-8944
ISRAEL
Eldis Technology
+972-9-562-666
OHIO
MISSOURI
East: CenTech
(314) 291-4230
Midwest Marketing Assoc.
Lyndhurst: (216) 381-8575
Dayton: (513) 433-2511
WISCONSIN
D. A. Case Associates
(612) 831-6777
Tampa
(813) 393-5011
JAPAN
Actes Engineering
Tokyo
+81-3-3769-3029
SALES OFFICES
West: CenTech
(816) 358-8100
HEADQUARTERS
Alliance Semiconductor
San Jose, CA
OKLAHOMA
Southern States Marketing
(214) 238-7500
GEORGIA
Concord Component
(404) 416-9597
MISSISSIPPI
Concord Component
(205) 772-8883
WYOMING
Technology Sales
(303) 777-9726
Rohm Co. Ltd.
Kyoto
+81-75-311-2121
(408) 383-4900
OREGON
ES/Chase
(503) 684-8500
HAWAII
Brooks Technical
(415) 960-3880
MONTANA
ES/Chase
(503) 684-8500
NORTHEAST AREA
Alliance Semiconductor
Boston, MA
KOREA
FM Korea
+822-575-9720
INTERNATIONAL
IDAHO
ES/Chase
(503) 684-8500
PENNSYLVANIA
East: Vantage Sales
(609) 424-6777
NEBRASKA
CenTech
(816) 358-8100
(617) 239-8127
AUSTRALIA
Woo Young Tech
+822-369-7099
NJS Technology Pty Ltd.
Mulgrave, Victoria
+61-3-562-1244
West: Midwest Marketing
(216) 381-8575
ILLINOIS
North: El-Mech
(312) 794-9100
NEVADA
North: Brooks Technical
(415) 960-3880
TECHNICAL CENTER
TAIWAN
Alliance Semiconductor
+886-2-723-9944
MALAYSIA,
SINGAPORE
Technology Distr. Pte Ltd.
+65-299-7811
R&D Electronics
Dingley, Victoria
+61-3-558-0444
RHODE ISLAND
Kitchen & Kutchin Inc.
(617) 229-2660
South: CenTech
(314) 291-4230
South: Competitive Tech.
(602) 265-9224
Alliance Semiconductor reserves the right to make changes in this data sheet at any time to improve design and supply the best product possible. Alliance Semiconductor cannot
assume responsibility for circuits shown or represent that they are free from patent infringement. Alliance products are not authorized for use as critical components in life
support devices or systems without the express written approval of the president of Alliance. The Alliance logo is a trademark of Alliance Semiconductor Corporation. All other
trademarks are property of their respective holders.
ALLIANCE SEMICONDUCTOR
3099 North First Street San Jose, CA 95134
(408) 383-4900 Fax (408) 383-4999
Printed in U.S.A.
Copyright © 1995 All rights reserved.
May 1996
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