AM29LV400BT120EC [AMD]

4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory; 4兆位（ 512K的×8位/ 256千×16位） CMOS 3.0伏只引导扇区闪存


型号：	AM29LV400BT120EC
厂家：	AMD
描述：	4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位（ 512K的×8位/ 256千×16位） CMOS 3.0伏只引导扇区闪存闪存
文件：	总7页 (文件大小：50K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ADVANCE INFORMATION

Am29LV400B

4 Megabit (512 K x 8-Bit/256 K x 16-Bit)

CMOS 3.0 Volt-only Boot Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

■ Unlock Bypass Program Command

— Full voltage range: 2.7 to 3.6 volt read and write

operations for battery-powered applications

— Reduces overall programming time when

issuing multiple program command sequences

— Regulated voltage range: 3.0 to 3.6 volt read

and write operations and for compatibility with

high performance 3.3 volt microprocessors

■ Top or bottom boot block configurations

available

■ Embedded Algorithms

■ Manufactured on 0.35 µm process technology

— Compatible with 0.5 µm Am29LV400 device

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

■ High performance

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

— Full voltage range: access times as fast as 80 ns

— Regulated voltage range: access times as fast

as 70 ns

■ Minimum 1,000,000 write cycle guarantee per

sector

■ Ultra low power consumption (typical values at

■ Package option

— 48-ball FBGA

— 48-pin TSOP

— 44-pin SO

5 MHz)

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 7 mA read current

— 15 mA program/erase current

■ Compatibility with JEDEC standards

— Pinout and software compatible with single-

power supply Flash

■ Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

seven 64 Kbyte sectors (byte mode)

— Superior inadvertent write protection

— One 8 Kword, two 4 Kword, one 16 Kword, and

seven 32 Kword sectors (word mode)

■ Data# Polling and toggle bits

— Provides a software method of detecting

program or erase operation completion

— Supports full chip erase

— Sector Protection features:

■ Ready/Busy# pin (RY/BY#)

A hardware method of locking a sector to

prevent any program or erase operations within

that sector

— Provides a hardware method of detecting

program or erase cycle completion

■ Erase Suspend/Erase Resume

Sectors can be locked in-system or via

programming equipment

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data

This document contains information on a product under development at Advanced Micro Devices. The information

is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed

product without notice.

Publication# 21523 Rev: A Amendment/0

Issue Date: January 1998

A D V A N C E I N F O R M A T I O N

GENERAL DESCRIPTION

The Am29LV400B is a 4 Mbit, 3.0 volt-only Flash

memory organized as 524,288 bytes or 262,144 words.

The device is offered in 48-ball FBGA, 44-pin SO, and

48-pin TSOP packages. The word-wide data (x16)

appears on DQ15–DQ0; the byte-wide (x8) data

appears on DQ7–DQ0. This device is designed to be

programmed in-system using only a single 3.0 volt V_CC

supply. No V_PPis required for write or erase opera-

tions. The device can also be programmed in standard

EPROM programmers.

programs the array (if it is not already programmed) be-

fore executing the erase operation. During erase, the

device automatically times the erase pulse widths and

verifies proper cell margin.

The host system can detect whether a program or

erase operation is complete by observing the RY/BY#

pin, or by reading the DQ7 (Data# Polling) and DQ6

(toggle) status bits. After a program or erase cycle

has been completed, the device is ready to read array

data or accept another command.

This device is manufactured using AMD’s 0.35 µm

process technology, and offers all the features and

benefits of the Am29LV400, which was manufactured

using 0.5 µm process technology. In addition, the

Am29LV400B features unlock bypass programming

and in-system sector protection/unprotection.

The sector erase architecture allows memory sectors

to be erased and reprogrammed without affecting the

data contents of other sectors. The device is fully

erased when shipped from the factory.

Hardware data protection measures include a low

detector that automatically inhibits write opera-

V_CC

The standard device offers access times of 70, 80, 90

and 120 ns, allowing high speed microprocessors to

operate without wait states. To eliminate bus conten-

tion the device has separate chip enable (CE#), write

enable (WE#) and output enable (OE#) controls.

tions during power transitions. The hardware sector

protection feature disables both program and erase

operations in any combination of the sectors of mem-

ory. This can be achieved in-system or via program-

ming equipment.

The device requires only a single 3.0 volt power sup-

ply for both read and write functions. Internally gener-

ated and regulated voltages are provided for the

program and erase operations.

The Erase Suspend feature enables the user to put

erase on hold for any period of time to read data from,

or program data to, any sector that is not selected for

erasure. True background erase can thus be achieved.

The device is entirely command set compatible with the

JEDEC single-power-supply Flash standard. Com-

mands are written to the command register using

standard microprocessor write timings. Register con-

tents serve as input to an internal state-machine that

controls the erase and programming circuitry. Write

cycles also internally latch addresses and data needed

for the programming and erase operations. Reading

data out of the device is similar to reading from other

Flash or EPROM devices.

The hardware RESET# pin terminates any operation

in progress and resets the internal state machine to

reading array data. The RESET# pin may be tied to the

system reset circuitry. A system reset would thus also

reset the device, enabling the system microprocessor

to read the boot-up firmware from the Flash memory.

The device offers two power-saving features. When

addresses have been stable for a specified amount of

time, the device enters the automatic sleep mode.

The system can also place the device into the standby

mode. Power consumption is greatly reduced in both

these modes.

Device programming occurs by executing the program

command sequence. This initiates the Embedded

Program algorithm—an internal algorithm that auto-

matically times the program pulse widths and verifies

proper cell margin. The Unlock Bypass mode facili-

tates faster programming times by requiring only two

write cycles to program data instead of four.

AMD’s Flash technology combines years of Flash

memory manufacturing experience to produce the

highest levels of quality, reliability and cost effective-

ness. The device electrically erases all bits within

a sector simultaneously via Fowler-Nordheim tun-

neling. The data is programmed using hot electron

injection.

Device erasure occurs by executing the erase com-

mand sequence. This initiates the Embedded Erase

algorithm—an internal algorithm that automatically pre-

1/29/98

Am29LV400B

A D V A N C E I N F O R M A T I O N

PRODUCT SELECTOR GUIDE

Family Part Number

Am29LV400B

Regulated Voltage Range: V =3.0–3.6 V

70R

Speed Options

Max access time, ns (t

Full Voltage Range: V = 2.7–3.6 V

120

)

ACC

Max CE# access time, ns (t

)

Max OE# access time, ns (t

)

Note: See “AC Characteristics” for full specifications.

BLOCK DIAGRAM

DQ0–DQ15 (A-1)

RY/BY#

Sector Switches

Erase Voltage

Generator

Input/Output

Buffers

RESET#

State

Control

WE#

BYTE#

Command

PGM Voltage

Generator

Data

Latch

Chip Enable

Output Enable

Logic

STB

CE#

OE#

Y-Decoder

Y-Gating

STB

Detector

Timer

Cell Matrix

X-Decoder

A0–A17

21523A-1

Am29LV400B

A D V A N C E I N F O R M A T I O N

CONNECTION DIAGRAMS

A15

A14

A13

A12

A11

A10

A16

BYTE#

V_SS

DQ15/A-1

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4

V_CC

WE#

RESET#

RY/BY#

Standard TSOP

DQ11

DQ3

DQ10

DQ2

DQ9

DQ1

DQ8

DQ0

OE#

V_SS

CE#

A17

A15

A14

A13

A12

A11

A10

WE#

RESET#

RY/BY#

A17

A16

BYTE#

V_SS

DQ15/A-1

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4

V_CC

DQ11

DQ3

DQ10

DQ2

DQ9

DQ1

DQ8

DQ0

Reverse TSOP

OE#

V_SS

CE#

21523A-2

1/29/98

Am29LV400B

A D V A N C E I N F O R M A T I O N

CONNECTION DIAGRAMS

RY/BY#

A17

44 RESET#

43 WE#

42 A8

41 A9

40 A10

39 A11

38 A12

37 A13

36 A14

35 A15

34 A16

33 BYTE#

32 V_SS

A1 10

A0 11

CE# 12

V_SS13

OE# 14

DQ0 15

DQ8 16

DQ1 17

DQ9 18

DQ2 19

DQ10 20

DQ3 21

DQ11 22

31 DQ15/A-1

30 DQ7

29 DQ14

28 DQ6

27 DQ13

26 DQ5

25 DQ12

24 DQ4

23 V_CC

FBGA

Bump Side (Bottom) View

CE#

OE#

V_SS

A17

DQ0

DQ8

DQ9

DQ1

RY/BY#

DQ2

DQ10

DQ11

DQ3

WE# RESET#

DQ5

DQ12

V_CC

DQ4

A10

A11

DQ7

DQ14

DQ13

DQ6

A13

A12

A14

A15

A16

BYTE# DQ15/A-1 V_SS

21523A-3

Am29LV400B

A D V A N C E I N F O R M A T I O N

Flash memory devices in FBGA packages may be

Special Handling Instructions for Fine

PItch Ball Grid Array (FBGA)

damaged if exposed to ultrasonic cleaning methods.

The package and/or data integrity may be

compromised if the package body is exposed to

temperatures above 150°C for prolonged periods of

time.

Special handling is required for Flash Memory products

in FBGA packages.

PIN CONFIGURATION

LOGIC SYMBOL

A0–A17

= 18 addresses

DQ0–DQ14 = 15 data inputs/outputs

A0–A17

16 or 8

DQ15/A-1

DQ15 (data input/output, word mode),

A-1 (LSB address input, byte mode)

DQ0–DQ15

(A-1)

BYTE#

CE#

Selects 8-bit or 16-bit mode

Chip enable

CE#

OE#

Output enable

WE#

Write enable

RESET#

BYTE#

RESET#

RY/BY#

V_CC

Hardware reset pin, active low

Ready/Busy# output

RY/BY#

3.0 volt-only single power supply

(see Product Selector Guide for speed

options and voltage supply tolerances)

21523A-4

V_SS

Device ground

Pin not connected internally

1/29/98

Am29LV400B

A D V A N C E I N F O R M A T I O N

ORDERING INFORMATION

Standard Products

AMD standard products are available in several packages and operating ranges. The order number (Valid Combi-

nation) is formed by a combination of the elements below.

Am29LV400B

70R

OPTIONAL PROCESSING

Blank = Standard Processing

B = Burn-in

(Contact an AMD representative for more information)

TEMPERATURE RANGE

C = Commercial (0°C to +70°C)

I = Industrial (–40°C to +85°C)

E = Extended (–55°C to +125°C)

PACKAGE TYPE

48-Pin Thin Small Outline Package (TSOP)

Standard Pinout (TS 048)

48-Pin Thin Small Outline Package (TSOP)

Reverse Pinout (TSR048)

44-Pin Small Outline Package (SO 044)

48-ball Fine Pitch Ball Grid Array (FBGA)

0.80 mm pitch, 6 x 8 mm package

SPEED OPTION

See Product Selector Guide and Valid Combinations

BOOT CODE SECTOR ARCHITECTURE

T = Top Sector

B = Bottom Sector

DEVICE NUMBER/DESCRIPTION

Am29LV400B

4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS Flash Memory

3.0 Volt-only Read, Program, and Erase

Valid Combinations

Valid Combinations list configurations planned to be sup-

Valid Combinations

ported in volume for this device. Consult the local AMD sales

office to confirm availability of specific valid combinations and

to check on newly released combinations.

Am29LV400BT70R,

EC, EI, FC,

Am29LV400BB70R

FI, SC, SI, WAC

Am29LV400BT80,

Am29LV400BB80

EC, EI, EE,

FC, FI, FE,

SC, SI, SE,

Am29LV400BT90,

Am29LV400BB90

WAC, WAI, WAE

Am29LV400BT120,

Am29LV400BB120

Trademarks

AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.

ExpressFlash is a trademark of Advanced Micro Devices, Inc.

Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.

Am29LV400B

AM29LV400BT120EC [AMD]

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