L160DB120VF [AMD]

16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory; 16兆位(2M ×8位/ 1的M× 16位) CMOS 3.0伏只引导扇区闪存
L160DB120VF
元器件型号: L160DB120VF
生产厂家: ADVANCED MICRO DEVICES    ADVANCED MICRO DEVICES
描述和应用:

16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
16兆位(2M ×8位/ 1的M× 16位) CMOS 3.0伏只引导扇区闪存

闪存
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Am29LV160D
Data Sheet
RETIRED
PRODUCT
This product has been retired and is not recommended for designs. For new and current designs,
S29AL016D supersedes Am29LV160D and is the factory-recommended migration path for this
device. Please refer to the S29AL016D data sheet for specifications and ordering information. Avail-
ability of this document is retained for reference and historical purposes only.
The following document contains information on Spansion memory products.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal data sheet improvement and are noted in the
document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number
22358
Revision
B
Amendment
7
Issue Date
May 5, 2006
THIS PAGE LEFT INTENTIONALLY BLANK.
DATA SHEET
Am29LV160D
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
This product has been retired and is not recommended for designs. For new and current designs, S29AL016D supersedes Am29LV160D and is the factory-recommended migration path
for this device. Please refer to the S29AL016D data sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
DISTINCTIVE CHARACTERISTICS
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
Manufactured on 0.23 µm process technology
— Fully compatible with 0.32 µm Am29LV160B device
High performance
— Access times as fast as 70 ns
Ultra low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 9 mA read current
— 20 mA program/erase current
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
thirty-one 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
thirty-one 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
— A hardware method of locking a sector to prevent any
program or erase operations within that sector
— Sectors can be locked in-system or via programming
equipment
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
Minimum 1,000,000 write cycle guarantee
per sector
20-year data retention at 125°C
— Reliable operation for the life of the system
Package option
— 48-ball FBGA
— 48-pin TSOP
— 44-pin SO
CFI (Common Flash Interface) compliant
— Provides device-specific information to the
system, allowing host software to easily
reconfigure for different Flash devices
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
Data# Polling and toggle bits
— Provides a software method of detecting program
or erase operation completion
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion (not available
on 44-pin SO)
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
Top or bottom boot block configurations
available
This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
22358
Rev:
B
Amendment:
7
Issue Date:
May 5, 2006
D A T A
S H E E T
GENERAL DESCRIPTION
The Am29LV160D is a 16 Mbit, 3.0 Volt-only Flash
memory organized as 2,097,152 bytes or 1,048,576
words. The device is offered in 48-ball FBGA, 44-pin
SO, and 48-pin TSOP packages. The word-wide data
(x16) appears on DQ15–DQ0; the byte-wide (x8) data
appears on DQ7–DQ0. This device is designed to be
programmed in-system with the standard system 3.0
volt V
CC
supply. A 12.0 V V
PP
or 5.0 V
CC
are not re-
quired for write or erase operations. The device can
also
be
programmed
in
standard
EPROM programmers.
The device offers access times of 70, 90, and 120 ns,
allowing high speed microprocessors to operate with-
out wait states. To eliminate bus contention the device
has separate chip enable (CE#), write enable (WE#)
and output enable (OE#) controls.
The device requires only a
single 3.0 volt power sup-
ply
for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
The Am29LV160D is entirely command set compatible
with the
JEDEC single-power-supply Flash stan-
dard.
Commands are written to the command register
using standard microprocessor write timings. Register
contents serve as input to an internal state-machine
that controls the erase and programming circuitry.
Write cycles also internally latch addresses and data
needed for the programming and erase operations.
Reading data out of the device is similar to reading
from other Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the
Embedded
Program
algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin. The
Unlock Bypass
mode facili-
tates faster programming times by requiring only two
write cycles to program data instead of four.
Device erasure occurs by executing the erase com-
mand sequence. This initiates the
Embedded Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase,
the device automatically times the erase pulse widths
and verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle)
status bits.
After a program or erase cycle
has been completed, the device is ready to read array
data or accept another command.
The
sector erase architecture
allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection
measures include a low
V
CC
detector that automatically inhibits write opera-
tions during power transitions. The
hardware sector
protection
feature disables both program and erase
operations in any combination of the sectors of mem-
o r y. T h i s c a n b e a c h i ev e d i n - s y s t e m o r v i a
programming equipment.
The
Erase Suspend/Erase Resume
feature enables
the user to put erase on hold for any period of time to
read data from, or program data to, any sector that is
not selected for erasure. True background erase can
thus be achieved.
The
hardware RESET# pin
terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to
the system reset circuitry. A system reset would thus
also reset the device, enabling the system micropro-
cessor to read the boot-up firmware from the Flash
memory.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the
automatic sleep mode.
The system can also place the device into the
standby mode.
Power consumption is greatly re-
duced in both these modes.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective-
ness. The device electrically erases all bits within a
sector simultaneously via Fowler-Nordheim tunnel-
ing. The data is programmed using hot electron
injection.
2
Am29LV160D
May 5, 2006 22358B7
D A T A
S H E E T
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 5
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 8
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 9
Table 1. Am29LV160D Device Bus Operations ................................9
DQ3: Sector Erase Timer ....................................................... 28
Table 10. Write Operation Status ................................................... 28
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 29
Figure 7. Maximum Negative Overshoot Waveform ...................... 30
Figure 8. Maximum Positive Overshoot Waveform........................ 30
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 30
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 31
Figure 9. I
CC1
Current vs. Time (Showing Active and
Automatic Sleep Currents) ............................................................. 32
Figure 10. Typical I
CC1
vs. Frequency ........................................... 32
Word/Byte Configuration .......................................................... 9
Requirements for Reading Array Data ..................................... 9
Writing Commands/Command Sequences .............................. 9
Program and Erase Operation Status .................................... 10
Standby Mode ........................................................................ 10
Automatic Sleep Mode ........................................................... 10
RESET#: Hardware Reset Pin ............................................... 11
Output Disable Mode .............................................................. 11
Table 2. Sector Address Tables (Am29LV160DT) ..........................12
Table 3. Sector Address Tables (Am29LV160DB) ..........................13
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Figure 11. Test Setup..................................................................... 33
Table 11. Test Specifications ......................................................... 33
Figure 12. Input Waveforms and Measurement Levels ................. 33
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 34
Read Operations .................................................................... 34
Figure 13. Read Operations Timings ............................................. 34
Hardware Reset (RESET#) .................................................... 35
Figure 14. RESET# Timings .......................................................... 35
Autoselect Mode ..................................................................... 14
Table 4. Am29LV160D Autoselect Codes (High Voltage Method) ..14
Word/Byte Configuration (BYTE#) ........................................ 36
Figure 15. BYTE# Timings for Read Operations............................ 36
Figure 16. BYTE# Timings for Write Operations............................ 36
Sector Protection/Unprotection ............................................... 14
Temporary Sector Unprotect .................................................. 15
Figure 1. Temporary Sector Unprotect Operation........................... 15
Figure 2. In-System Sector Protect/Unprotect Algorithms .............. 16
Erase/Program Operations ..................................................... 37
Figure 17. Program Operation Timings..........................................
Figure 18. Chip/Sector Erase Operation Timings ..........................
Figure 19. Data# Polling Timings (During Embedded Algorithms).
Figure 20. Toggle Bit Timings (During Embedded Algorithms)......
Figure 21. DQ2 vs. DQ6 for Erase and
Erase Suspend Operations ............................................................
Figure 22. Temporary Sector Unprotect/Timing Diagram ..............
Figure 23. Sector Protect/Unprotect Timing Diagram ....................
Figure 24. Alternate CE# Controlled Write Operation Timings ......
38
39
40
40
41
41
42
44
Common Flash Memory Interface (CFI) . . . . . . . 17
Table 5. CFI Query Identification String ..........................................17
Table 6. System Interface String .....................................................18
Table 7. Device Geometry Definition ..............................................18
Table 8. Primary Vendor-Specific Extended Query ........................19
Hardware Data Protection ...................................................... 19
Low V
CC
Write Inhibit .............................................................. 19
Write Pulse “Glitch” Protection ............................................... 19
Logical Inhibit .......................................................................... 19
Power-Up Write Inhibit ............................................................ 19
Command Definitions . . . . . . . . . . . . . . . . . . . . . . 20
Reading Array Data ................................................................ 20
Reset Command ..................................................................... 20
Autoselect Command Sequence ............................................ 20
Word/Byte Program Command Sequence ............................. 20
Unlock Bypass Command Sequence ..................................... 21
Figure 3. Program Operation .......................................................... 21
Chip Erase Command Sequence ........................................... 21
Sector Erase Command Sequence ........................................ 22
Erase Suspend/Erase Resume Commands ........................... 22
Figure 4. Erase Operation............................................................... 23
Command Definitions ............................................................. 24
Table 9. Am29LV160D Command Definitions ................................24
Write Operation Status . . . . . . . . . . . . . . . . . . . . . 25
DQ7: Data# Polling ................................................................. 25
Figure 5. Data# Polling Algorithm ................................................... 25
RY/BY#: Ready/Busy# ........................................................... 26
DQ6: Toggle Bit I .................................................................... 26
DQ2: Toggle Bit II ................................................................... 26
Reading Toggle Bits DQ6/DQ2 .............................................. 26
Figure 6. Toggle Bit Algorithm......................................................... 27
Erase and Programming Performance . . . . . . . 45
Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 45
TSOP and SO Pin Capacitance . . . . . . . . . . . . . . 45
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 46
TS 048—48-Pin Standard TSOP ............................................ 46
TSR048—48-Pin Reverse TSOP ........................................... 47
FBC048—48-Ball Fine-Pitch Ball Grid Array (FBGA)
8 x 9 mm ................................................................................ 48
SO 044—44-Pin Small Outline Package ................................ 49
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 50
Revision A (January 1999) ..................................................... 50
Revision A+1 (April 19, 1999) ................................................. 50
Revision B (November 23, 1999) ............................................ 50
Revision B+1 (February 22, 2000) .......................................... 50
Revision B+2 (November 7, 2000) ......................................... 50
Revision B+3 (November 10, 2000) ....................................... 50
Revision B+4 (April 5, 2004) ................................................... 50
Revision B+5 (June 4, 2004) .................................................. 50
Revision B+6 (October 7, 2004) ............................................. 50
Revision B7 (May 5, 2006) ..................................................... 50
22358B7 May 5, 2006
Am29LV160D
3
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    L160DB120VF
    描述和应用

    16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
    16兆位(2M ×8位/ 1的M× 16位) CMOS 3.0伏只引导扇区闪存

    闪存
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