L200BT90VD_技术文档

Am29LV200B

Data Sheet

The Am29LV200B is not offered for new designs. Please contact a Spansion representative for alter-

nates.

The following document contains information on Spansion memory products. Although the document

is marked with the name of the company that originally developed the specification, Spansion will

continue to offer these products to existing customers.

Continuity of Specifications

There is no change to this data sheet as a result of offering the device as a Spansion product. Any

changes that have been made are the result of normal data sheet improvement and are noted in the

document revision summary, where supported. Future routine revisions will occur when appro and

changes will be noted in a revision summary.

Continuity of Ordering Part Numbers

Spansion continues to support existing part numbers beginning with “Am” and “MBM”. To order these

products, please use only the Ordering Part Numbers listed in this document.

For More Information

Please contact your local sales office for additional information about Spansion memory solutions.

Publication Number 21521 Revision D Amendment 6 Issue Date October 10, 2006

THIS PAGE LEFT INTENTIONALLY BLANK.

DATA SHEET

Am29LV200B

2 Megabit (256 K x 8-Bit/128 K x 16-Bit)

CMOS 3.0 Volt-only Boot Sector Flash Memory

The Am29LV200B is not offered for new designs. Please contact a Spansion representative for alternates.

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

■ Embedded Algorithms

— 2.7 to 3.6 volt read and write operations for

battery-powered applications

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

■ Manufactured on 0.32 µm process technology

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

— Compatible with 0.5 µm Am29LV200 device

■ High performance

■ Minimum 1 million erase cycle guarantee per

— Full voltage range: access times as fast as 70 ns

sector

— Regulated voltage range: access times as fast as

55 ns

■ 20-year data retention at 125°C

— Reliable operation for the life of the system

■ Package option

■ Ultra low power consumption (typical values at

5 MHz)

— 48-pin TSOP

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 7 mA read current

— 44-pin SO

— 48-ball FBGA

■ Compatibility with JEDEC standards

— 15 mA program/erase current

— Pinout and software compatible with single-

power supply Flash

■ Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

three 64 Kbyte sectors (byte mode)

— Superior inadvertent write protection

■ Data# Polling and toggle bits

— One 8 Kword, two 4 Kword, one 16 Kword, and

three 32 Kword sectors (word mode)

— Provides a software method of detecting program

or erase operation completion

— Supports full chip erase

— Sector Protection features:

■ Ready/Busy# pin (RY/BY#)

A hardware method of locking a sector to prevent

any program or erase operations within that sector

— Provides a hardware method of detecting

program or erase cycle completion

Sectors can be locked in-system or via

programming equipment

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Unlock Bypass Program Command

■ Hardware reset pin (RESET#)

— Reduces overall programming time when issuing

multiple program command sequences

— Hardware method to reset the device to reading

array data

■ Top or bottom boot block configurations

available

This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Publication# 21521 Rev: D Amendment: 6

Issue Date: October 10, 2006

D A T A S H E E T

GENERAL DESCRIPTION

The Am29LV200B is a 2 Mbit, 3.0 volt-only Flash

memory organized as 262,144 bytes or 131,072 words.

The device is offered in 44-pin SO, 48-pin TSOP, and 48-

ball FBGA packages. The word-wide data (x16) appears

on DQ15-DQ0; the byte-wide (x8) data appears on

DQ7-DQ0. This device is designed to be programmed

preprograms the array (if it is not already programmed)

before executing the erase operation. During erase, the

device automatically times the erase pulse widths and

verifies proper cell margin.

The host system can detect whether a program or

erase operation is complete by observing the RY/BY#

pin, or by reading the DQ7 (Data# Polling) and DQ6

(toggle) status bits. After a program or erase cycle has

been completed, the device is ready to read array data

or accept another command.

in-system using only a single 3.0 volt V

supply. No

CC

V

is required for write or erase operations. The device

PP

can also be programmed in standard EPROM

programmers.

This device is manufactured using AMD’s 0.32 µm

process technology, and offers all the features and ben-

efits of the Am29LV200, which was manufactured using

0.5 µm process technology. In addition, the

Am29LV200B features unlock bypass programming

and in-system sector protection/unprotection.

The sector erase architecture allows memory sectors

to be erased and reprogrammed without affecting the

data contents of other sectors. The device is fully

erased when shipped from the factory.

Hardware data protection measures include a low

V

detector that automatically inhibits write opera-

CC

The standard device offers access times of 55, 70, 90

and 120 ns, allowing high speed microprocessors to

operate without wait states. To eliminate bus contention

the device has separate chip enable (CE#), write

enable (WE#) and output enable (OE#) controls.

tions during power transitions. The hardware sector

protection feature disables both program and erase

operations in any combination of the sectors of

memory. This can be achieved in-system or via pro-

gramming equipment.

The device requires only a single 3.0 volt power

supply for both read and write functions. Internally

generated and regulated voltages are provided for the

program and erase operations.

The Erase Suspend feature enables the user to put

erase on hold for any period of time to read data from,

or program data to, any sector that is not selected for

erasure. True background erase can thus be achieved.

The device is entirely command set compatible with the

JEDEC single-power-supply Flash standard. Com-

mands are written to the command register using

standard microprocessor write timings. Register con-

tents serve as input to an internal state-machine that

controls the erase and programming circuitry. Write

cycles also internally latch addresses and data needed

for the programming and erase operations. Reading

data out of the device is similar to reading from other

Flash or EPROM devices.

The hardware RESET# pin terminates any operation

in progress and resets the internal state machine to

reading array data. The RESET# pin may be tied to the

system reset circuitry. A system reset would thus also

reset the device, enabling the system microprocessor

to read the boot-up firmware from the Flash memory.

The device offers two power-saving features. When

addresses have been stable for a specified amount of

time, the device enters the automatic sleep mode.

The system can also place the device into the standby

mode. Power consumption is greatly reduced in both

these modes.

Device programming occurs by executing the program

command sequence. This initiates the Embedded

Program algorithm—an internal algorithm that auto-

matically times the program pulse widths and verifies

proper cell margin. The Unlock Bypass mode facili-

tates faster programming times by requiring only two

write cycles to program data instead of four.

AMD’s Flash technology combines years of Flash

memory manufacturing experience to produce the

highest levels of quality, reliability and cost effective-

ness. The device electrically erases all bits within a

sector simultaneously via Fowler-Nordheim tunneling.

The data is programmed using hot electron injection.

Device erasure occurs by executing the erase

command sequence. This initiates the Embedded

Erase algorithm—an internal algorithm that automatically

2

Am29LV200B

21521D6 October 10, 2006

D A T A S H E E T

TABLE OF CONTENTS

Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4

Special Handling Instructions ................................................... 6

Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . .7

Table 1. Am29LV200B Device Bus Operations ................................ 9

Word/Byte Configuration .......................................................... 9

Requirements for Reading Array Data ..................................... 9

Writing Commands/Command Sequences .............................. 9

Program and Erase Operation Status .................................... 10

Standby Mode ........................................................................ 10

Automatic Sleep Mode ................................................................10

RESET#: Hardware Reset Pin ...................................................10

Output Disable Mode .............................................................. 11

Table 2. Am29LV200BT Top Boot Block Sector Address Table..... 11

Table 3. Am29LV200BB Bottom Boot Block Sector Address Table 11

Autoselect Mode ..................................................................... 11

Table 4. Am29LV200B Autoselect Codes (High Voltage Method).. 12

Sector Protection/Unprotection ............................................... 12

Temporary Sector Unprotect .................................................. 12

Figure 1. In-System Sector Protect/Unprotect Algorithms ...............13

Figure 2. Temporary Sector Unprotect Operation ...........................14

Hardware Data Protection ...................................................... 14

DQ2: Toggle Bit II ................................................................... 21

Reading Toggle Bits DQ6/DQ2 ............................................... 21

DQ5: Exceeded Timing Limits ................................................ 22

DQ3: Sector Erase Timer ....................................................... 22

Figure 6. Toggle Bit Algorithm ........................................................ 22

Table 6. Write Operation Status..................................................... 23

Operating Ranges. . . . . . . . . . . . . . . . . . . . . . . . . 24

Extended (E) Devices ............................................................. 24

V

Supply Voltages .............................................................. 24

CC

Figure 9. I_CC1Current vs. Time (Showing Active and Automatic

Sleep Currents) .............................................................................. 26

Figure 10. Typical I_CC1vs. Frequency ........................................... 26

Figure 11. Test Setup ..................................................................... 27

Table 7. Test Specifications........................................................... 27

Key to Switching Waveforms. . . . . . . . . . . . . . . . 27

Figure 12. Input Waveforms and Measurement Levels ................. 27

Read Operations .................................................................... 28

Figure 13. Read Operations Timings ............................................. 28

Hardware Reset (RESET#) .................................................... 29

Figure 14. RESET# Timings .......................................................... 29

Word/Byte Configuration (BYTE#) ........................................ 30

Figure 15. BYTE# Timings for Read Operations ............................ 30

Figure 16. BYTE# Timings for Write Operations ............................ 30

Erase/Program Operations ..................................................... 31

Figure 17. Program Operation Timings .......................................... 32

Figure 18. Chip/Sector Erase Operation Timings .......................... 33

Figure 19. Data# Polling Timings (During Embedded Algorithms) . 34

Figure 20. Toggle Bit Timings (During Embedded Algorithms) ...... 34

Figure 21. DQ2 vs. DQ6 ................................................................. 35

Temporary Sector Unprotect .................................................. 35

Figure 22. Temporary Sector Unprotect Timing Diagram .............. 35

Figure 23. Sector Protect/Unprotect Timing Diagram .................... 36

Alternate CE# Controlled Erase/Program Operations ............ 37

Figure 24. Alternate CE# Controlled Write Operation Timings ...... 38

Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 39

TSOP and SO Pin Capacitance . . . . . . . . . . . . . . 39

Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 39

TS 048—48-Pin Standard TSOP ............................................ 40

SO 044—44-Pin Small Outline Package ................................ 41

FBA048—48-Ball Fine-Pitch Ball Grid Array, 0.80 mm pitch,

6 x 8 mm package .................................................................. 42

Low V Write Inhibit .............................................................. 14

CC

Write Pulse “Glitch” Protection ............................................... 14

Logical Inhibit .......................................................................... 14

Power-Up Write Inhibit ............................................................ 14

Reading Array Data ................................................................ 15

Reset Command ..................................................................... 15

Autoselect Command Sequence ............................................ 15

Word/Byte Program Command Sequence ............................. 15

Unlock Bypass Command Sequence ..................................... 16

Figure 3. Program Operation ..........................................................16

Chip Erase Command Sequence ........................................... 16

Sector Erase Command Sequence ........................................ 17

Erase Suspend/Erase Resume Commands ........................... 17

Figure 4. Erase Operation ...............................................................18

Command Definitions ............................................................. 19

Table 5. Am29LV200B Command Definitions................................. 19

DQ7: Data# Polling ................................................................. 20

Figure 5. Data# Polling Algorithm ...................................................20

RY/BY#: Ready/Busy# ........................................................... 21

DQ6: Toggle Bit I .................................................................... 21

October 10, 2006 21521D6

Am29LV200B

3

D A T A S H E E T

PRODUCT SELECTOR GUIDE

Family Part Number

Am29LV200B

Regulated Voltage Range: V_CC= 3.0–3.6 V

Full Voltage Range: V_CC= 2.7–3.6 V

Max access time, ns (t_ACC

Max CE# access time, ns (t_CE

Max OE# access time, ns (t_OE

55R

Speed Options

70

90

35

120

50

)

55

30

70

30

)

Note: See “AC Characteristics” for full specifications.

BLOCK DIAGRAM

DQ0–DQ15 (A-1)

RY/BY#

V_CC

Sector Switches

V_SS

Erase Voltage

Generator

Input/Output

Buffers

RESET#

State

Control

WE#

BYTE#

Command

Register

PGM Voltage

Generator

Data

Latch

Chip Enable

Output Enable

Logic

STB

CE#

OE#

Y-Decoder

Y-Gating

STB

V_CCDetector

Timer

Cell Matrix

X-Decoder

A0–A16

4

Am29LV200B

21521D6 October 10, 2006

D A T A S H E E T

CONNECTION DIAGRAMS

A15

A14

A13

A12

A11

A10

A9

1

2

3

4

5

6

7

8

48

47

46

45

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

A16

BYTE#

V_SS

DQ15/A-1

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4

V_CC

DQ11

DQ3

DQ10

DQ2

DQ9

DQ1

DQ8

DQ0

OE#

V_SS

CE#

A0

A8

NC

WE#

RESET#

NC

RY/BY#

NC

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

Standard TSOP

NC

A7

A6

A5

A4

A3

A2

A1

October 10, 2006 21521D6

Am29LV200B

5

D A T A S H E E T

CONNECTION DIAGRAMS

NC

RY/BY#

NC

1

2

3

4

5

6

7

8

9

44 RESET#

43 WE#

42 A8

A7

41 A9

A6

40 A10

A5

39 A11

A4

38 A12

A3

37 A13

A2

36 A14

A1 10

A0 11

35 A15

34 A16

SO

CE# 12

V_SS13

33 BYTE#

32 V_SS

OE# 14

DQ0 15

DQ8 16

DQ1 17

DQ9 18

DQ2 19

DQ10 20

DQ3 21

DQ11 22

31 DQ15/A-1

30 DQ7

29 DQ14

28 DQ6

27 DQ13

26 DQ5

25 DQ12

24 DQ4

23 V_CC

48-ball FBGA

Top View, Balls Facing Down

A6

B6

C6

D6

E6

F6

G6

H6

A13

A12

A14

A15

A16

BYTE# DQ15/A-1 V_SS

A5

A9

B5

A8

C5

D5

E5

F5

G5

H5

A10

A11

DQ7

DQ14

DQ13

DQ6

A4

B4

C4

D4

E4

F4

G4

H4

WE# RESET#

NC

DQ5

DQ12

V_CC

DQ4

A3

B3

C3

D3

E3

F3

G3

H3

RY/BY#

NC

DQ2

DQ10

DQ11

DQ3

A2

A7

B2

C2

A6

D2

A5

E2

F2

G2

H2

NC

DQ0

DQ8

DQ9

DQ1

A1

A3

B1

A4

C1

A2

D1

A1

E1

A0

F1

G1

H1

CE#

OE#

V_SS

promised if the package body is exposed to

temperatures above 150°C for prolonged periods of

time.

Special Handling Instructions

Special handling is required for Flash Memory products

in molded packages (TSOP, BGA, SSOP, PLCC,

PDIP). The package and/or data integrity may be com-

6

Am29LV200B

21521D6 October 10, 2006

D A T A S H E E T

PIN CONFIGURATION

LOGIC SYMBOL

A0–A16

= 17 addresses

17

DQ0–DQ14 = 15 data inputs/outputs

A0–A16

16 or 8

DQ15/A-1

=

DQ15 (data input/output, word mode),

A-1 (LSB address input, byte mode)

DQ0–DQ15

(A-1)

BYTE#

CE#

=

Selects 8-bit or 16-bit mode

Chip enable

CE#

OE#

Output enable

WE#

Write enable

RESET#

BYTE#

RESET#

RY/BY#

Hardware reset pin, active low

Ready/Busy# output

RY/BY#

V

3.0 volt-only single power supply

CC

(see Product Selector Guide for speed

options and voltage supply tolerances)

V

=

Device ground

SS

NC

Pin not connected internally

October 10, 2006 21521D6

Am29LV200B

7

D A T A S H E E T

ORDERING INFORMATION

Standard Products

AMD standard products are available in several packages and operating ranges. The order number (Valid Combi-

nation) is formed by a combination of the elements below.

Am29LV200B

T

-55R

E

C

TEMPERATURE RANGE

C

D

I

=

Commercial (0°C to +70°C)

Commercial (0°C to +70°C) with Pb-free package

Industrial (–40°C to +85°C)

Industrial (–40°C to +85°C) with Pb-free package

Extended (–55°C to +125°C)

F

E

K

Extended (–55°C to +125°C) with Pb-free package

PACKAGE TYPE

E

=

48-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 048)

44-Pin Small Outline Package (SO 044)

S

WA

48-ball Fine-pitch Ball Grid Array (FBGA),

0.80 mm ball pitch, 6 x 8 mm package (FBA048)

SPEED OPTION

See Product Selector Guide and Valid Combinations

BOOT CODE SECTOR ARCHITECTURE

T

B

=

Top sector

Bottom sector

DEVICE NUMBER/DESCRIPTION

Am29LV200B

2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS Flash Memory

3.0 Volt-only Read, Program, and Erase

Valid Combinations

Valid Combinations for FBGA Packages

AM29LV200BT-55R,

AM29LV200BB-55R

Order Number

Package Marking

EC, EI, SC, SI

ED, EF, SD, SF

WAC,

AM29LV200BT-70,

AM29LV200BB-70

AM29LV200BT55R,

AM29LV200BB55R

WAI, L200BT55R,

WAD, L200BB55R

WAF

C, I,

D, F

AM29LV200BT-90,

AM29LV200BB-90

AM29LV200BT70,

AM29LV200BB70

L200BT70V,

WAC,

EC, EI, EE, ED, EF, EK

SC, SI, SE, SD, SF, SK

L200BB70V

WAI,

AM29LV200BT-120,

AM29LV200BB-120

WAE,

AM29LV200BT90,

AM29LV200BB90

L200BT90V,

L200BB90V

C, I, E,

D, F, K

WAD,

WAF,

WAK

AM29LV200BT120,

AM29LV200BB120

L200BT12V,

L200BB12V

Valid Combinations

Valid Combinations list configurations planned to be sup-

ported in volume for this device. Consult the local AMD sales

office to confirm availability of specific valid combinations and

to check on newly released combinations.

8

Am29LV200B

21521D6 October 10, 2006

D A T A S H E E T

DEVICE BUS OPERATIONS

This section describes the requirements and use of the

device bus operations, which are initiated through the

internal command register. The command register

itself does not occupy any addressable memory loca-

tion. The register is composed of latches that store the

commands, along with the address and data informa-

tion needed to execute the command. The contents of

the register serve as inputs to the internal state

machine. The state machine outputs dictate the func-

tion of the device. Table 1 lists the device bus

operations, the inputs and control levels they require,

and the resulting output. The following subsections

describe each of these operations in further detail.

Table 1. Am29LV200B Device Bus Operations

DQ8–DQ15

DQ0– BYTE# BYTE#

Addresses

(Note 1)

Operation

CE# OE# WE# RESET#

DQ7

D_OUT

D_IN

= V_IH

D_OUT

D_IN

= V_IL

Read

Write

L

H

L

H

A_IN

DQ8–DQ14=High-Z,

DQ15 = A-1

H

V_CC

0.3 V

V_CC

0.3 V

Standby

X

High-Z High-Z

High-Z

Output Disable

Reset

L

H

X

H

X

H

L

X

High-Z High-Z

High-Z

X

Sector Address, A6 = L,

A1 = H, A0 = L

Sector Protect (Note 2)

L

X

H

X

L

X

V_ID

D_IN

X

Sector Address, A6 = H,

A1 = H, A0 = L

Sector Unprotect (Note 2)

Temporary Sector

Unprotect

A_IN

D_IN

High-Z

Legend:

L = Logic Low = V_IL, H = Logic High = V_IH, V_ID= 12.0 ± 0.5 V, X = Don’t Care, A_IN= Addresses In, D_IN= Data In, D_OUT= Data Out

Notes:

1. Addresses are A16:A0 in word mode (BYTE# = V_IH), A16:A-1 in byte mode (BYTE# = V_IL).

2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector

Protection/Unprotection” section.

The internal state machine is set for reading array data

Word/Byte Configuration

upon device power-up, or after a hardware reset. This

The BYTE# pin controls whether the device data I/O

ensures that no spurious alteration of the memory

pins DQ15–DQ0 operate in the byte or word configura-

content occurs during the power transition. No

tion. If the BYTE# pin is set at logic ‘1’, the device is in

command is necessary in this mode to obtain array

word configuration, DQ15–DQ0 are active and con-

data. Standard microprocessor read cycles that assert

trolled by CE# and OE#.

valid addresses on the device address inputs produce

If the BYTE# pin is set at logic ‘0’, the device is in byte

configuration, and only data I/O pins DQ0–DQ7 are

active and controlled by CE# and OE#. The data I/O

pins DQ8–DQ14 are tri-stated, and the DQ15 pin is

used as an input for the LSB (A-1) address function.

valid data on the device data outputs. The device

remains enabled for read access until the command

register contents are altered.

See “Reading Array Data” for more information. Refer

to the AC Read Operations table for timing specifica-

tions and to Figure 13 for the timing diagram. I

DC Characteristics table represents the active current

specification for reading array data.

in the

CC1

Requirements for Reading Array Data

To read array data from the outputs, the system must

drive the CE# and OE# pins to V . CE# is the power

IL

control and selects the device. OE# is the output

control and gates array data to the output pins. WE#

Writing Commands/Command Sequences

To write a command or command sequence (which

includes programming data to the device and erasing

should remain at V . The BYTE# pin determines

IH

whether the device outputs array data in words or

bytes.

October 10, 2006 21521D6

Am29LV200B

9

D A T A S H E E T

sectors of memory), the system must drive WE# and The device enters the CMOS standby mode when the

CE# to V , and OE# to V .

CE# and RESET# pins are both held at V ± 0.3 V.

IL

IH

CC

(Note that this is a more restricted voltage range than

For program operations, the BYTE# pin determines

whether the device accepts program data in bytes or

words. Refer to “Word/Byte Configuration” for more

information.

V .) If CE# and RESET# are held at V , but not within

IH

V

± 0.3 V, the device will be in the standby mode, but

CC

the standby current will be greater. The device requires

standard access time (t ) for read access when the

CE

The device features an Unlock Bypass mode to facili-

tate faster programming. Once the device enters the

Unlock Bypass mode, only two write cycles are

required to program a word or byte, instead of four. The

“Word/Byte Program Command Sequence” section

has details on programming data to the device using

both standard and Unlock Bypass command

sequences.

device is in either of these standby modes, before it is

ready to read data.

If the device is deselected during erasure or program-

ming, the device draws active current until the operation

is completed.

I

in the DC Characteristics table represents the

CC3

standby current specification.

An erase operation can erase one sector, multiple sec-

tors, or the entire device. Tables 2 and 3 indicate the

address space that each sector occupies. A “sector

address” consists of the address bits required to

uniquely select a sector. The “Am29LV200B Command

Definitions” section has details on erasing a sector or

the entire chip, or suspending/resuming the erase

operation.

Automatic Sleep Mode

The automatic sleep mode minimizes Flash device

energy consumption. The device automatically enables

this mode when addresses remain stable for t

+ 30

ACC

ns. The automatic sleep mode is independent of the

CE#, WE#, and OE# control signals. Standard address

access timings provide new data when addresses are

changed. While in sleep mode, output data is latched

After the system writes the autoselect command

sequence, the device enters the autoselect mode. The

system can then read autoselect codes from the

internal register (which is separate from the memory

array) on DQ7–DQ0. Standard read cycle timings apply

in this mode. Refer to the Autoselect Mode and Autose-

lect Command Sequence sections for more

information.

and always available to the system. I

acteristics table represents the automatic sleep mode

current specification.

in the DC Char-

CC4

RESET#: Hardware Reset Pin

The RESET# pin provides a hardware method of reset-

ting the device to reading array data. When the RESET#

pin is driven low for at least a period of t , the device

RP

I

in the DC Characteristics table represents the

immediately terminates any operation in progress,

tristates all output pins, and ignores all read/write com-

mands for the duration of the RESET# pulse. The device

also resets the internal state machine to reading array

data. The operation that was interrupted should be rein-

itiated once the device is ready to accept another

command sequence, to ensure data integrity.

CC2

active current specification for the write mode. The “AC

Characteristics” section contains timing specification

tables and timing diagrams for write operations.

Program and Erase Operation Status

During an erase or program operation, the system may

check the status of the operation by reading the status

Current is reduced for the duration of the RESET# pulse.

bits on DQ7–DQ0. Standard read cycle timings and I

CC

When RESET# is held at V

0.3 V, the device draws

SS

read specifications apply. Refer to “Write Operation

Status” for more information, and to “AC Characteris-

tics” for timing diagrams.

CMOS standby current (I

). If RESET# is held at V

CC4

IL

but not within V

greater.

0.3 V, the standby current will be

SS

The RESET# pin may be tied to the system reset cir-

cuitry. A system reset would thus also reset the Flash

memory, enabling the system to read the boot-up firm-

ware from the Flash memory.

Standby Mode

When the system is not reading or writing to the device,

it can place the device in the standby mode. In this

mode, current consumption is greatly reduced, and the

outputs are placed in the high impedance state, inde-

pendent of the OE# input.

10

Am29LV200B

21521D6 October 10, 2006

D A T A S H E E T

rithms). The system can read data t after the RESET#

If RESET# is asserted during a program or erase oper-

ation, the RY/BY# pin remains a “0” (busy) until the

internal reset operation is complete, which requires a

RH

pin returns to V .

IH

Refer to the AC Characteristics tables for RESET#

parameters and to Figure 14 for the timing diagram.

time of t

(during Embedded Algorithms). The

READY

system can thus monitor RY/BY# to determine whether

the reset operation is complete. If RESET# is asserted

when a program or erase operation is not executing

(RY/BY# pin is “1”), the reset operation is completed

Output Disable Mode

When the OE# input is at V , output from the device is

disabled. The output pins are placed in the high imped-

ance state.

IH

within a time of t

(not during Embedded Algo-

READY

Table 2. Am29LV200BT Top Boot Block Sector Address Table

Address Range (in hexadecimal)

Sector Size

(Kbytes/

(x8)

(x16)

Sector

SA0

SA1

SA2

SA3

SA4

SA5

SA6

A16

0

A15

A14

X

A13

X

A12

X

Kwords)

Address Range

0

1

0

1

64/32

32/16

8/4

00000h–0FFFFh

10000h–1FFFFh

20000h–2FFFFh

30000h–37FFFh

38000h–39FFFh

3A000h–3BFFFh

3C000h–3FFFFh

00000h–07FFFh

08000h–0FFFFh

10000h–17FFFh

18000h–1BFFFh

1C000h–1CFFFh

1D000h–1DFFFh

1E000h–1FFFFh

0

X

1

X

1

0

X

1

0

1

0

1

8/4

1

X

16/8

Table 3. Am29LV200BB Bottom Boot Block Sector Address Table

Address Range (in hexadecimal)

Sector Size

(Kbytes/

(x8)

(x16)

Sector

SA0

SA1

SA2

SA3

SA4

SA5

SA6

A16

0

A15

0

A14

0

A13

0

A12

X

Kwords)

Address Range

16/8

8/4

00000h–03FFFh

04000h–05FFFh

06000h–07FFFh

08000h–0FFFFh

10000h–1FFFFh

20000h–2FFFFh

30000h–3FFFFh

00000h–01FFFh

02000h–02FFFh

03000h–03FFFh

04000h–07FFFh

08000h–0FFFFh

10000h–17FFFh

18000h–1FFFFh

0

1

0

1

8/4

0

1

X

32/16

64/32

0

1

X

1

0

X

1

X

Note for Tables 2 and 3: Address range is A16:A-1 in byte mode and A16:A0 in word mode. See “Word/Byte Configuration”

section.

Table 4. In addition, when verifying sector protection,

Autoselect Mode

the sector address must appear on the appropriate

The autoselect mode provides manufacturer and

highest order address bits (see Tables 2 and 3). Table

device identification, and sector protection verification,

4 shows the remaining address bits that are don’t care.

through identifier codes output on DQ7–DQ0. This

When all necessary bits have been set as required, the

mode is primarily intended for programming equipment

programming equipment may then read the corre-

to automatically match a device to be programmed with

sponding identifier code on DQ7–DQ0.

its corresponding programming algorithm. However,

the autoselect codes can also be accessed in-system

through the command register.

To access the autoselect codes in-system, the host

system can issue the autoselect command via the

command register, as shown in Table 5. This method

When using programming equipment, the autoselect

does not require V . See “Am29LV200B Command

ID

mode requires V (11.5 V to 12.5 V) on address pin

ID

Definitions” for details on using the autoselect mode.

A9. Address pins A6, A1, and A0 must be as shown in

October 10, 2006 21521D6

Am29LV200B

11

D A T A S H E E T

Table 4. Am29LV200B Autoselect Codes (High Voltage Method)

A16 A11

to to

Mode CE# OE# WE# A12 A10 A9

A8

to

A7

A5

to

A2

DQ8

to

A0 DQ15

DQ7

to

DQ0

Description

A6

A1

Manufacturer ID: AMD

L

H

X

V_ID

X

L

X

L

X

01h

3Bh

Device ID:

Am29LV200B

(Top Boot Block)

Word

Byte

Word

Byte

22h

X

V_ID

L

H

L

H

X

22h

X

3Bh

BFh

Device ID:

Am29LV200B

(Bottom Boot Block)

X

V_ID

X

H

L

01h

(protected)

X

Sector Protection Verification

L

H

SA

V_ID

L

H

00h

(unprotected)

L = Logic Low = V_IL, H = Logic High = V_IH, SA = Sector Address, X = Don’t care.

lication number 21226 contains further details; contact

an AMD representative to request a copy.

Sector Protection/Unprotection

The hardware sector protection feature disables both

program and erase operations in any sector. The hard-

ware sector unprotection feature re-enables both

program and erase operations in previously protected

sectors. Sector protection/unprotection can be imple-

mented via two methods.

The device is shipped with all sectors unprotected.

AMD offers the option of programming and protecting

sectors at its factory prior to shipping the device

through AMD’s ExpressFlash™ Service. Contact an

AMD representative for details.

The primary method requires V on the RESET# pin

It is possible to determine whether a sector is protected

or unprotected. See “Autoselect Mode” for details.

ID

only, and can be implemented either in-system or via

programming equipment. Figure 1 shows the algo-

rithms and Figure 23 shows the timing diagram. This

method uses standard microprocessor bus cycle

timing. For sector unprotect, all unprotected sectors

must first be protected prior to the first sector unprotect

write cycle.

Temporary Sector Unprotect

This feature allows temporary unprotection of previ-

ously protected sectors to change data in-system. The

Sector Unprotect mode is activated by setting the

RESET# pin to V . During this mode, formerly pro-

ID

tected sectors can be programmed or erased by

The alternate method intended only for programming

selecting the sector addresses. Once V is removed

equipment requires V on address pin A9 and OE#.

ID

from the RESET# pin, all the previously protected

sectors are protected again. Figure 2 shows the algo-

rithm, and Figure 22 shows the timing diagrams, for this

feature.

This method is compatible with programmer routines

written for earlier 3.0 volt-only AMD flash devices. Pub-

12

Am29LV200B

21521D6 October 10, 2006

D A T A S H E E T

START

Protect all sectors:

PLSCNT = 1

RESET# = V_ID

The indicated portion

of the sector protect

algorithm must be

performed for all

unprotected sectors

prior to issuing the

first sector

RESET# = V_ID

Wait 1 μs

unprotect address

No

First Write

Cycle = 60h?

No

First Write

Cycle = 60h?

Temporary Sector

Unprotect Mode

Temporary Sector

Unprotect Mode

Yes

Set up sector

address

No

All sectors

protected?

Sector Protect:

Write 60h to sector

address with

A6 = 0, A1 = 1,

A0 = 0

Yes

Set up first sector

address

Sector Unprotect:

Wait 150 µs

Write 60h to sector

address with

A6 = 1, A1 = 1,

A0 = 0

Verify Sector

Protect: Write 40h

to sector address

with A6 = 0,

Reset

PLSCNT = 1

Increment

PLSCNT

Wait 15 ms

A1 = 1, A0 = 0

Verify Sector

Unprotect: Write

40h to sector

address with

A6 = 1, A1 = 1,

A0 = 0

Read from

sector address

with A6 = 0,

A1 = 1, A0 = 0

Increment

PLSCNT

No

PLSCNT

= 25?

Read from

sector address

with A6 = 1,

Data = 01h?

Yes

A1 = 1, A0 = 0

No

Yes

Set up

next sector

address

Yes

No

PLSCNT

= 1000?

Protect another

sector?

Data = 00h?

Yes

Device failed

No

Yes

Remove V_ID

from RESET#

No

Last sector

verified?

Device failed

Write reset

command

Yes

Remove V_ID

Sector Unprotect

Algorithm

from RESET#

Sector Protect

Algorithm

Sector Protect

complete

Write reset

command

Sector Unprotect

complete

Figure 1. In-System Sector Protect/Unprotect Algorithms

Am29LV200B

October 10, 2006 21521D6

13

D A T A S H E E T

against inadvertent writes (refer to Table 5 for

command definitions). In addition, the following hard-

ware data protection measures prevent accidental

erasure or programming, which might otherwise be

START

caused by spurious system level signals during V

power-up and power-down transitions, or from system

noise.

CC

RESET# = V_ID

(Note 1)

Low V

Write Inhibit

CC

Perform Erase or

Program Operations

When V

is less than V

, the device does not

LKO

CC

accept any write cycles. This protects data during V

CC

power-up and power-down. The command register and

all internal program/erase circuits are disabled, and the

RESET# = V_IH

device resets. Subsequent writes are ignored until V

CC

is greater than V

. The system must provide the

LKO

proper signals to the control pins to prevent uninten-

Temporary Sector

Unprotect Completed

(Note 2)

tional writes when V is greater than V

.

CC

LKO

Write Pulse “Glitch” Protection

Noise pulses of less than 5 ns (typical) on OE#, CE# or

WE# do not initiate a write cycle.

Notes:

Logical Inhibit

1. All protected sectors unprotected.

Write cycles are inhibited by holding any one of OE# =

2. All previously protected sectors are protected once

again.

V , CE# = V or WE# = V . To initiate a write cycle,

IL

IH

CE# and WE# must be a logical zero while OE# is a

logical one.

Figure 2. Temporary Sector Unprotect Operation

Power-Up Write Inhibit

If WE# = CE# = V and OE# = V during power up, the

IL

IH

device does not accept commands on the rising edge

of WE#. The internal state machine is automatically

reset to reading array data on power-up.

Hardware Data Protection

The command sequence requirement of unlock cycles

for programming or erasing provides data protection

14

Am29LV200B

21521D6 October 10, 2006

D A T A S H E E T

COMMAND DEFINITIONS

Writing specific address and data commands or

sequences into the command register initiates device

operations. Table 5 defines the valid register command

sequences. Writing incorrect address and data

values or writing them in the improper sequence

resets the device to reading array data.

however, the device ignores reset commands until the

operation is complete.

The reset command may be written between the

sequence cycles in an autoselect command sequence.

Once in the autoselect mode, the reset command must

be written to return to reading array data (also applies

to autoselect during Erase Suspend).

All addresses are latched on the falling edge of WE# or

CE#, whichever happens later. All data is latched on

the rising edge of WE# or CE#, whichever happens

first. Refer to the appropriate timing diagrams in the

“AC Characteristics” section.

If DQ5 goes high during a program or erase operation,

writing the reset command returns the device to

reading array data (also applies during Erase

Suspend).

Reading Array Data

Autoselect Command Sequence

The device is automatically set to reading array data

after device power-up. No commands are required to

retrieve data. The device is also ready to read array

data after completing an Embedded Program or

Embedded Erase algorithm.

The autoselect command sequence allows the host

system to access the manufacturer and devices codes,

and determine whether or not a sector is protected.

Table 5 shows the address and data requirements. This

method is an alternative to that shown in Table 4, which

After the device accepts an Erase Suspend command,

the device enters the Erase Suspend mode. The

system can read array data using the standard read

timings, except that if it reads at an address within

erase-suspended sectors, the device outputs status

data. After completing a programming operation in the

Erase Suspend mode, the system may once again

read array data with the same exception. See “Erase

Suspend/Erase Resume Commands” for more infor-

mation on this mode.

is intended for PROM programmers and requires V

on address bit A9.

ID

The autoselect command sequence is initiated by

writing two unlock cycles, followed by the autoselect

command. The device then enters the autoselect

mode, and the system may read at any address any

number of times, without initiating another command

sequence. A read cycle at address XX00h retrieves the

manufacturer code. A read cycle at address XX01h in

word mode (or 02h in byte mode) returns the device

code. A read cycle containing a sector address (SA)

and the address 02h in word mode (or 04h in byte

mode) returns 01h if that sector is protected, or 00h if it

is unprotected. Refer to Tables 2 and 3 for valid sector

addresses.

The system must issue the reset command to re-

enable the device for reading array data if DQ5 goes

high, or while in the autoselect mode. See the “Reset

Command” section, next.

See also “Requirements for Reading Array Data” in the

“Device Bus Operations” section for more information.

The Read Operations table provides the read parame-

ters, and Figure 13 shows the timing diagram.

The system must write the reset command to exit the

autoselect mode and return to reading array data.

Word/Byte Program Command Sequence

Reset Command

Writing the reset command to the device resets the

device to reading array data. Address bits are don’t

care for this command.

The system may program the device by word or byte,

depending on the state of the BYTE# pin. Program-

ming is a four-bus-cycle operation. The program

command sequence is initiated by writing two unlock

write cycles, followed by the program set-up command.

The program address and data are written next, which

in turn initiate the Embedded Program algorithm. The

system is not required to provide further controls or tim-

ings. The device automatically generates the program

pulses and verifies the programmed cell margin. Table

5 shows the address and data requirements for the

byte program command sequence.

The reset command may be written between the

sequence cycles in an erase command sequence

before erasing begins. This resets the device to reading

array data. Once erasure begins, however, the device

ignores reset commands until the operation is

complete.

The reset command may be written between the

sequence cycles in a program command sequence

before programming begins. This resets the device to

reading array data (also applies to programming in

Erase Suspend mode). Once programming begins,

When the Embedded Program algorithm is complete,

the device then returns to reading array data and

addresses are no longer latched. The system can

determine the status of the program operation by using

October 10, 2006 21521D6

Am29LV200B

15

D A T A S H E E T

DQ7, DQ6, or RY/BY#. See “Write Operation Status”

for information on these status bits.

START

Any commands written to the device during the

Embedded Program Algorithm are ignored. Note that a

hardware reset immediately terminates the program-

ming operation. The Byte Program command

sequence should be reinitiated once the device has

reset to reading array data, to ensure data integrity.

Write Program

Command Sequence

Programming is allowed in any sequence and across

sector boundaries. A bit cannot be programmed

from a “0” back to a “1”. Attempting to do so may halt

the operation and set DQ5 to “1”, or cause the Data#

Polling algorithm to indicate the operation was suc-

cessful. However, a succeeding read will show that the

data is still “0”. Only erase operations can convert a “0”

to a “1”.

Data Poll

from System

Embedded

Program

algorithm

in progress

Verify Data?

Yes

No

Unlock Bypass Command Sequence

The unlock bypass feature allows the system to

program bytes or words to the device faster than using

the standard program command sequence. The unlock

bypass command sequence is initiated by first writing

two unlock cycles. This is followed by a third write cycle

containing the unlock bypass command, 20h. The

device then enters the unlock bypass mode. A two-

cycle unlock bypass program command sequence is all

that is required to program in this mode. The first cycle

in this sequence contains the unlock bypass program

command, A0h; the second cycle contains the program

address and data. Additional data is programmed in

the same manner. This mode dispenses with the initial

two unlock cycles required in the standard program

command sequence, resulting in faster total program-

ming time. Table 5 shows the requirements for the

command sequence.

No

Increment Address

Last Address?

Yes

Programming

Completed

Note: See Table 5 for program command sequence.

Figure 3. Program Operation

During the unlock bypass mode, only the Unlock

Bypass Program and Unlock Bypass Reset commands

are valid. To exit the unlock bypass mode, the system

must issue the two-cycle unlock bypass reset

command sequence. The first cycle must contain the

program address and the data 90h. The second cycle

need only contain the data 00h. The device then

returns to reading array data.

Chip Erase Command Sequence

Chip erase is a six bus cycle operation. The chip erase

command sequence is initiated by writing two unlock

cycles, followed by a set-up command. Two additional

unlock write cycles are then followed by the chip erase

command, which in turn invokes the Embedded Erase

algorithm. The device does not require the system to

preprogram prior to erase. The Embedded Erase algo-

rithm automatically preprograms and verifies the entire

memory for an all zero data pattern prior to electrical

erase. The system is not required to provide any con-

trols or timings during these operations. Table 5 shows

the address and data requirements for the chip erase

command sequence.

Figure 3 illustrates the algorithm for the program oper-

ation. See the Erase/Program Operations table in “AC

Characteristics” for parameters, and to Figure 17 for

timing diagrams.

Any commands written to the chip during the

Embedded Erase algorithm are ignored. Note that a

hardware reset during the chip erase operation imme-

diately terminates the operation. The Chip Erase

command sequence should be reinitiated once the

16

Am29LV200B

21521D6 October 10, 2006

D A T A S H E E T

device has returned to reading array data, to ensure

operation. The Sector Erase command sequence

should be reinitiated once the device has returned to

reading array data, to ensure data integrity.

data integrity.

The system can determine the status of the erase oper-

ation by using DQ7, DQ6, DQ2, or RY/BY#. See “Write

Operation Status” for information on these status bits.

When the Embedded Erase algorithm is complete, the

device returns to reading array data and addresses are

no longer latched.

When the Embedded Erase algorithm is complete, the

device returns to reading array data and addresses are

no longer latched. The system can determine the

status of the erase operation by using DQ7, DQ6, DQ2,

or RY/BY#. (Refer to “Write Operation Status” for infor-

mation on these status bits.)

Figure 4 illustrates the algorithm for the erase opera-

tion. See the Erase/Program Operations tables in “AC

Characteristics” for parameters, and to Figure 18 for

timing diagrams.

Figure 4 illustrates the algorithm for the erase opera-

tion. Refer to the Erase/Program Operations tables in

the “AC Characteristics” section for parameters, and to

Figure 18 for timing diagrams.

Sector Erase Command Sequence

Erase Suspend/Erase Resume Commands

Sector erase is a six bus cycle operation. The sector

erase command sequence is initiated by writing two

unlock cycles, followed by a set-up command. Two

additional unlock write cycles are then followed by the

address of the sector to be erased, and the sector

erase command. Table 5 shows the address and data

requirements for the sector erase command sequence.

The Erase Suspend command allows the system to

interrupt a sector erase operation and then read data

from, or program data to, any sector not selected for

erasure. This command is valid only during the sector

erase operation, including the 50 µs time-out period

during the sector erase command sequence. The

Erase Suspend command is ignored if written during

the chip erase operation or Embedded Program algo-

rithm. Writing the Erase Suspend command during the

Sector Erase time-out immediately terminates the

time-out period and suspends the erase operation.

Addresses are “don’t-cares” when writing the Erase

Suspend command.

The device does not require the system to preprogram

the memory prior to erase. The Embedded Erase algo-

rithm automatically programs and verifies the sector for

an all zero data pattern prior to electrical erase. The

system is not required to provide any controls or

timings during these operations.

After the command sequence is written, a sector erase

time-out of 50 µs begins. During the time-out period,

additional sector addresses and sector erase com-

mands may be written. Loading the sector erase buffer

may be done in any sequence, and the number of

sectors may be from one sector to all sectors. The time

between these additional cycles must be less than 50

µs, otherwise the last address and command might not

be accepted, and erasure may begin. It is recom-

mended that processor interrupts be disabled during

this time to ensure all commands are accepted. The

interrupts can be re-enabled after the last Sector Erase

command is written. If the time between additional

sector erase commands can be assumed to be less

than 50 µs, the system need not monitor DQ3. Any

command other than Sector Erase or Erase

Suspend during the time-out period resets the

device to reading array data. The system must

rewrite the command sequence and any additional

sector addresses and commands.

When the Erase Suspend command is written during a

sector erase operation, the device requires a maximum

of 20 µs to suspend the erase operation. However,

when the Erase Suspend command is written during

the sector erase time-out, the device immediately ter-

minates the time-out period and suspends the erase

operation.

After the erase operation has been suspended, the

system can read array data from or program data to

any sector not selected for erasure. (The device “erase

suspends” all sectors selected for erasure.) Normal

read and write timings and command definitions apply.

Reading at any address within erase-suspended

sectors produces status data on DQ7–DQ0. The

system can use DQ7, or DQ6 and DQ2 together, to

determine if a sector is actively erasing or is erase-sus-

pended. See “Write Operation Status” for information

on these status bits.

After an erase-suspended program operation is com-

plete, the system can once again read array data within

non-suspended sectors. The system can determine

the status of the program operation using the DQ7 or

DQ6 status bits, just as in the standard program oper-

ation. See “Write Operation Status” for more

information.

The system can monitor DQ3 to determine if the sector

erase timer has timed out. (See the “DQ3: Sector Erase

Timer” section.) The time-out begins from the rising

edge of the final WE# pulse in the command sequence.

Once the sector erase operation has begun, only the

Erase Suspend command is valid. All other commands

are ignored. Note that a hardware reset during the

sector erase operation immediately terminates the

The system may also write the autoselect command

sequence when the device is in the Erase Suspend

October 10, 2006 21521D6

Am29LV200B

17

D A T A S H E E T

mode. The device allows reading autoselect codes

even at addresses within erasing sectors, since the

codes are not stored in the memory array. When the

device exits the autoselect mode, the device reverts to

the Erase Suspend mode, and is ready for another

valid operation. See “Autoselect Command Sequence”

for more information.

START

Write Erase

Command Sequence

The system must write the Erase Resume command

(address bits are “don’t care”) to exit the erase suspend

mode and continue the sector erase operation. Further

writes of the Resume command are ignored. Another

Erase Suspend command can be written after the

device has resumed erasing.

Data Poll

from System

Embedded

Erase

algorithm

in progress

No

Data = FFh?

Yes

Erasure Completed

Notes:

1. See Table 5 for erase command sequence.

2. See “DQ3: Sector Erase Timer” for more information.

Figure 4. Erase Operation

18

Am29LV200B

21521D6 October 10, 2006

D A T A S H E E T

Command Definitions

Table 5. Am29LV200B Command Definitions

Bus Cycles (Notes 2–5)

Command

Sequence

(Note 1)

First

Second

Third

Addr

Fourth

Fifth

Sixth

Addr Data Addr Data

Data Addr Data Addr Data Addr Data

Read (Note 6)

Reset (Note 7)

1

RA

XXX

555

RD

F0

Word

2AA

555

2AA

555

2AA

555

AAA

555

Manufacturer ID

4

AA

55

90

X00

01

Byte

Word

Byte

Word

Byte

AAA

555

X01 223B

X02

3B

X01 22BF

Device ID,

Top Boot Block

AAA

555

AAA

555

Device ID,

Bottom Boot Block

AAA

X02

BF

XX00

XX01

00

(SA)

X02

Word

Byte

555

2AA

555

Sector Protect Verify

(Note 9)

4

AA

55

90

(SA)

X04

AAA

01

Word

Byte

Word

Byte

555

AAA

555

2AA

555

2AA

555

PA

555

AAA

555

Program

Unlock Bypass

4

3

AA

55

A0

20

PA

PD

AAA

XXX

555

AAA

Unlock Bypass Program (Note 10)

Unlock Bypass Reset (Note 11)

2

A0

90

PD

00

XXX

2AA

555

2AA

555

Word

555

AAA

555

AAA

555

2AA

555

2AA

555

Chip Erase

Byte

6

AA

55

80

AA

55

10

30

AAA

555

AAA

Word

Sector Erase

Byte

SA

AAA

XXX

AAA

Erase Suspend (Note 12)

Erase Resume (Note 13)

1

B0

30

Legend:

X = Don’t care

PD = Data to be programmed at location PA. Data latches on the

rising edge of WE# or CE# pulse, whichever happens first.

RA = Address of the memory location to be read.

SA = Address of the sector to be verified (in autoselect mode) or

erased. Address bits A16–A12 uniquely select any sector.

RD = Data read from location RA during read operation.

PA = Address of the memory location to be programmed.

Addresses latch on the falling edge of the WE# or CE# pulse,

whichever happens later.

Notes:

1. See Table 1 for description of bus operations.

9. The data is 00h for an unprotected sector and 01h for a

protected sector. See “Autoselect Command Sequence” for

more information.

2. All values are in hexadecimal.

3. Except when reading array or autoselect data, all bus cycles

are write operations.

10. The Unlock Bypass command is required prior to the Unlock

Bypass Program command.

4. Data bits DQ15–DQ8 are don’t cares for unlock and

command cycles.

11. The Unlock Bypass Reset command is required to return to

reading array data when the device is in the unlock bypass

mode.

5. Address bits A16–A11 are don’t cares for unlock and

command cycles, unless SA or PA required.

12. The system may read and program in non-erasing sectors, or

enter the autoselect mode, when in the Erase Suspend

mode. The Erase Suspend command is valid only during a

sector erase operation.

6. No unlock or command cycles required when reading array

data.

7. The Reset command is required to return to reading array

data when device is in the autoselect mode, or if DQ5 goes

high (while the device is providing status data).

13. The Erase Resume command is valid only during the Erase

Suspend mode.

8. The fourth cycle of the autoselect command sequence is a

read cycle.

October 10, 2006 21521D6

Am29LV200B

19

D A T A S H E E T

WRITE OPERATION STATUS

The device provides several bits to determine the

status of a write operation: DQ2, DQ3, DQ5, DQ6,

DQ7, and RY/BY#. Table 6 and the following subsec-

tions describe the functions of these bits. DQ7,

RY/BY#, and DQ6 each offer a method for determining

whether a program or erase operation is complete or in

progress. These three bits are discussed first.

Table 6 shows the outputs for Data# Polling on DQ7.

Figure 5 shows the Data# Polling algorithm.

START

DQ7: Data# Polling

The Data# Polling bit, DQ7, indicates to the host

system whether an Embedded Algorithm is in progress

or completed, or whether the device is in Erase Sus-

pend. Data# Polling is valid after the rising edge of the

final WE# pulse in the program or erase command

sequence.

Read DQ7–DQ0

Addr = VA

Yes

DQ7 = Data?

During the Embedded Program algorithm, the device

outputs on DQ7 the complement of the datum pro-

grammed to DQ7. This DQ7 status also applies to

programming during Erase Suspend. When the

Embedded Program algorithm is complete, the device

outputs the datum programmed to DQ7. The system

must provide the program address to read valid status

information on DQ7. If a program address falls within a

protected sector, Data# Polling on DQ7 is active for

approximately 1 µs, then the device returns to reading

array data.

No

DQ5 = 1?

Yes

Read DQ7–DQ0

Addr = VA

During the Embedded Erase algorithm, Data# Polling

produces a “0” on DQ7. When the Embedded Erase

algorithm is complete, or if the device enters the Erase

Suspend mode, Data# Polling produces a “1” on DQ7.

This is analogous to the complement/true datum output

described for the Embedded Program algorithm: the

erase function changes all the bits in a sector to “1”;

prior to this, the device outputs the “complement,” or

“0.” The system must provide an address within any of

the sectors selected for erasure to read valid status

information on DQ7.

Yes

DQ7 = Data?

No

PASS

FAIL

After an erase command sequence is written, if all

sectors selected for erasing are protected, Data#

Polling on DQ7 is active for approximately 100 µs, then

the device returns to reading array data. If not all

selected sectors are protected, the Embedded Erase

algorithm erases the unprotected sectors, and ignores

the selected sectors that are protected.

Notes:

1. VA = Valid address for programming. During a sector

erase operation, a valid address is an address within any

sector selected for erasure. During chip erase, a valid

address is any non-protected sector address.

2. DQ7 should be rechecked even if DQ5 = “1” because

DQ7 may change simultaneously with DQ5.

When the system detects DQ7 has changed from the

complement to true data, it can read valid data at DQ7–

DQ0 on the following read cycles. This is because DQ7

may change asynchronously with DQ0–DQ6 while

Output Enable (OE#) is asserted low. Figure 19, Data#

Polling Timings (During Embedded Algorithms), in the

“AC Characteristics” section illustrates this.

Figure 5. Data# Polling Algorithm

20

Am29LV200B

21521D6 October 10, 2006

D A T A S H E E T

Table 6 shows the outputs for Toggle Bit I on DQ6.

RY/BY#: Ready/Busy#

Figure 6 shows the toggle bit algorithm. Figure 20 in the

“AC Characteristics” section shows the toggle bit timing

diagrams. Figure 21 shows the differences between

DQ2 and DQ6 in graphical form. See also the subsec-

tion on DQ2: Toggle Bit II.

The RY/BY# is a dedicated, open-drain output pin that

indicates whether an Embedded Algorithm is in

progress or complete. The RY/BY# status is valid after

the rising edge of the final WE# pulse in the command

sequence. Since RY/BY# is an open-drain output,

several RY/BY# pins can be tied together in parallel

DQ2: Toggle Bit II

with a pull-up resistor to V

.

CC

The “Toggle Bit II” on DQ2, when used with DQ6, indi-

cates whether a particular sector is actively erasing

(that is, the Embedded Erase algorithm is in progress),

or whether that sector is erase-suspended. Toggle Bit

II is valid after the rising edge of the final WE# pulse in

the command sequence.

If the output is low (Busy), the device is actively erasing

or programming. (This includes programming in the

Erase Suspend mode.) If the output is high (Ready),

the device is ready to read array data (including during

the Erase Suspend mode), or is in the standby mode.

Table 6 shows the outputs for RY/BY#. Figures 14, 17

and 18 shows RY/BY# for reset, program, and erase

operations, respectively.

DQ2 toggles when the system reads at addresses

within those sectors that have been selected for era-

sure. (The system may use either OE# or CE# to

control the read cycles.) But DQ2 cannot distinguish

whether the sector is actively erasing or is erase-sus-

pended. DQ6, by comparison, indicates whether the

device is actively erasing, or is in Erase Suspend, but

cannot distinguish which sectors are selected for era-

sure. Thus, both status bits are required for sector and

mode information. Refer to Table 6 to compare outputs

for DQ2 and DQ6.

DQ6: Toggle Bit I

Toggle Bit I on DQ6 indicates whether an Embedded

Program or Erase algorithm is in progress or complete,

or whether the device has entered the Erase Suspend

mode. Toggle Bit I may be read at any address, and is

valid after the rising edge of the final WE# pulse in the

command sequence (prior to the program or erase

operation), and during the sector erase time-out.

Figure 6 shows the toggle bit algorithm in flowchart

form, and the section “DQ2: Toggle Bit II” explains the

algorithm. See also the DQ6: Toggle Bit I subsection.

Figure 20 shows the toggle bit timing diagram. Figure

21 shows the differences between DQ2 and DQ6 in

graphical form.

During an Embedded Program or Erase algorithm

operation, successive read cycles to any address

cause DQ6 to toggle. The system may use either OE#

or CE# to control the read cycles. When the operation

is complete, DQ6 stops toggling.

After an erase command sequence is written, if all

sectors selected for erasing are protected, DQ6 toggles

for approximately 100 µs, then returns to reading array

data. If not all selected sectors are protected, the

Embedded Erase algorithm erases the unprotected

sectors, and ignores the selected sectors that are

protected.

Reading Toggle Bits DQ6/DQ2

Refer to Figure 6 for the following discussion. When-

ever the system initially begins reading toggle bit

status, it must read DQ7–DQ0 at least twice in a row to

determine whether a toggle bit is toggling. Typically, the

system would note and store the value of the toggle bit

after the first read. After the second read, the system

would compare the new value of the toggle bit with the

first. If the toggle bit is not toggling, the device has com-

pleted the program or erase operation. The system can

read array data on DQ7–DQ0 on the following read

cycle.

The system can use DQ6 and DQ2 together to deter-

mine whether a sector is actively erasing or is erase-

suspended. When the device is actively erasing (that is,

the Embedded Erase algorithm is in progress), DQ6

toggles. When the device enters the Erase Suspend

mode, DQ6 stops toggling. However, the system must

also use DQ2 to determine which sectors are erasing

or erase-suspended. Alternatively, the system can use

DQ7 (see the subsection on DQ7: Data# Polling).

However, if after the initial two read cycles, the system

determines that the toggle bit is still toggling, the

system also should note whether the value of DQ5 is

high (see the section on DQ5). If it is, the system

should then determine again whether the toggle bit is

toggling, since the toggle bit may have stopped tog-

gling just as DQ5 went high. If the toggle bit is no longer

toggling, the device has successfully completed the

program or erase operation. If it is still toggling, the

device did not completed the operation successfully,

and the system must write the reset command to return

to reading array data.

If a program address falls within a protected sector,

DQ6 toggles for approximately 1 µs after the program

command sequence is written, then returns to reading

array data.

DQ6 also toggles during the erase-suspend-program

mode, and stops toggling once the Embedded

Program algorithm is complete.

October 10, 2006 21521D6

Am29LV200B

21

D A T A S H E E T

The remaining scenario is that the system initially

determines that the toggle bit is toggling and DQ5 has

not gone high. The system may continue to monitor the

toggle bit and DQ5 through successive read cycles,

determining the status as described in the previous

paragraph. Alternatively, it may choose to perform

other system tasks. In this case, the system must start

at the beginning of the algorithm when it returns to

determine the status of the operation (top of Figure 6).

START

Read DQ7–DQ0

(Note 1)

DQ5: Exceeded Timing Limits

Read DQ7–DQ0

DQ5 indicates whether the program or erase time has

exceeded a specified internal pulse count limit. Under

these conditions DQ5 produces a “1.” This is a failure

condition that indicates the program or erase cycle was

not successfully completed.

No

Toggle Bit

= Toggle?

The DQ5 failure condition may appear if the system

tries to program a “1” to a location that is previously pro-

grammed to “0.” Only an erase operation can change

a “0” back to a “1.” Under this condition, the device

halts the operation, and when the operation has

exceeded the timing limits, DQ5 produces a “1.”

Yes

No

DQ5 = 1?

Yes

Under both these conditions, the system must issue the

reset command to return the device to reading array

data.

(Notes

1, 2)

Read DQ7–DQ0

Twice

DQ3: Sector Erase Timer

After writing a sector erase command sequence, the

system may read DQ3 to determine whether or not an

erase operation has begun. (The sector erase timer

does not apply to the chip erase command.) If addi-

tional sectors are selected for erasure, the entire time-

out also applies after each additional sector erase com-

mand. When the time-out is complete, DQ3 switches

from “0” to “1.” If the time between additional sector

erase commands from the system can be assumed to

be less than 50 µs, the system need not monitor DQ3.

See also the “Sector Erase Command Sequence”

section.

Toggle Bit

= Toggle?

No

Yes

Program/Erase

Operation Not

Complete, Write

Reset Command

Program/Erase

Operation Complete

After the sector erase command sequence is written,

the system should read the status on DQ7 (Data#

Polling) or DQ6 (Toggle Bit I) to ensure the device has

accepted the command sequence, and then read DQ3.

If DQ3 is “1”, the internally controlled erase cycle has

begun; all further commands (other than Erase Sus-

pend) are ignored until the erase operation is complete.

If DQ3 is “0”, the device will accept additional sector

erase commands. To ensure the command has been

accepted, the system software should check the status

of DQ3 prior to and following each subsequent sector

erase command. If DQ3 is high on the second status

check, the last command might not have been

accepted. Table 6 shows the outputs for DQ3.

Notes:

1. Read toggle bit twice to determine whether or not it is

toggling. See text.

2. Recheck toggle bit because it may stop toggling as DQ5

changes to “1” . See text.

Figure 6. Toggle Bit Algorithm

22

Am29LV200B

21521D6 October 10, 2006

D A T A S H E E T

Table 6. Write Operation Status

DQ7

DQ5

DQ2

Operation

(Note 2)

DQ6

(Note 1)

DQ3

N/A

1

(Note 2)

RY/BY#

Embedded Program Algorithm

Embedded Erase Algorithm

DQ7#

0

Toggle

0

No toggle

Toggle

0

Standard

Mode

Reading within Erase

Suspended Sector

1

No toggle

0

N/A

Toggle

1

Erase

Suspend Reading within Non-Erase

Data

0

Data

N/A

Data

N/A

1

0

Mode

Suspended Sector

Erase-Suspend-Program

DQ7#

Toggle

Notes:

1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.

See “DQ5: Exceeded Timing Limits” for more information.

2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.

October 10, 2006 21521D6

Am29LV200B

23

D A T A S H E E T

ABSOLUTE MAXIMUM RATINGS

Storage Temperature

Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C

20 ns

Ambient Temperature

with Power Applied. . . . . . . . . . . . . . –65°C to +125°C

+0.8 V

Voltage with Respect to Ground

–0.5 V

–2.0 V

V

(Note 1) . . . . . . . . . . . . . . . .–0.5 V to +4.0 V

CC

A9, OE#, and

RESET# (Note 2). . . . . . . . . . . .–0.5 V to +12.5 V

20 ns

All other pins (Note 1) . . . . . –0.5 V to V +0.5 V

CC

Output Short Circuit Current (Note 3) . . . . . . 200 mA

Figure 7. Maximum Negative

Overshoot Waveform

Notes:

1. Minimum DC voltage on input or I/O pins is –0.5 V. During

voltage transitions, input or I/O pins may overshoot V_SSto

–2.0 V for periods of up to 20 ns. Maximum DC voltage on

input or I/O pins is V_CC+0.5 V. During voltage transitions,

input or I/O pins may overshoot to V_CC+2.0 V for periods

up to 20 ns. See Figure 7 and Figure 8.

20 ns

2. Minimum DC input voltage on pins A9, OE#, and RESET#

is –0.5 V. During voltage transitions, A9, OE#, and

RESET# may overshoot V_SSto –2.0 V for periods of up to

20 ns. See Figure 7. Maximum DC input voltage on pin A9

is +12.5 V which may overshoot to 14.0 V for periods up

to 20 ns.

V_CC

+2.0 V

V_CC

+0.5 V

2.0 V

3. No more than one output may be shorted to ground at a

time. Duration of the short circuit should not be greater

than one second.

20 ns

Figure 8. Maximum Positive

Overshoot Waveform

Stresses above those listed under “Absolute Maximum

Ratings” may cause permanent damage to the device. This is

a stress rating only; functional operation of the device at

these or any other conditions above those indicated in the

operational sections of this data sheet is not implied.

Exposure of the device to absolute maximum rating

conditions for extended periods may affect device reliability.

OPERATING RANGES

Commercial (C) Devices

Ambient Temperature (T ) . . . . . . . . . . . 0°C to +70°C

A

Industrial (I) Devices

Ambient Temperature (T ) . . . . . . . . . –40°C to +85°C

A

Extended (E) Devices

Ambient Temperature (T ) . . . . . . . . –55°C to +125°C

A

V

Supply Voltages

CC

for regulated voltage range. . . . .+3.0 V to +3.6 V

for full voltage range . . . . . . . . . .+2.7 V to +3.6 V

Operating ranges define those limits between which the

functionality of the device is guaranteed.

24

Am29LV200B

21521D6 October 10, 2006

D A T A S H E E T

Test Conditions

DC CHARACTERISTICS

CMOS Compatible

Parameter

Description

Min

Typ

Max

±1.0

35

Unit

µA

V_IN= V_SSto V_CC

,

I_LI

Input Load Current

V_CC= V_{CC max}

I_LIT

I_LO

A9 Input Load Current

Output Leakage Current

V_CC= V_{CC max}; A9 = 12.5 V

µA

V_OUT= V_SSto V_CC

,

±1.0

µA

V_CC= V_{CC max}

5 MHz

1 MHz

5 MHz

1 MHz

7

2

7

2

12

4

CE# = V_IL,OE# ₌V_IH,

Byte Mode

V_CCActive Read Current

(Notes 1, 2)

I_CC1

mA

12

4

CE# = V_IL,OE# ₌V_IH,

Word Mode

V_CCActive Write Current

(Notes 2, 3, and 5)

I_CC2

CE# = V_IL,OE# ₌V_IH

15

30

mA

I_CC3

I_CC4

V_CCStandby Current (Note 2)

V_CCReset Current (Note 2)

CE#, RESET# = V_CC±0.3 V

RESET# = V_SS± 0.3 V

0.2

5

µA

Automatic Sleep Mode (Notes 2, V_IH= V_CC0.3 V;

I_CC5

0.2

5

µA

4)

V_IL= V_SS± 0.3 V

V_IL

V_IH

Input Low Voltage

Input High Voltage

–0.5

0.8

V

0.7 x V_CC

V_CC+ 0.3

Voltage for Autoselect and

Temporary Sector Unprotect

V_ID

V_CC= 3.3 V

11.5

12.5

0.45

V

V_OL

V_OH1

V_OH2

Output Low Voltage

I_OL= 4.0 mA, V_CC= V_{CC min}

I_OH= –2.0 mA, V_CC= V_{CC min}

I_OH= –100 µA, V_CC= V_{CC min}

V

0.85 V_CC

V_CC–0.4

Output High Voltage

Low V_CCLock-Out Voltage

(Note 5)

V_LKO

2.3

2.5

V

Notes:

1. The I_CCcurrent listed is typically less than 2 mA/MHz, with OE# at V_IH. Typical V_CCis 3.0 V.

2. Maximum I_CCspecifications are tested with V_CC= V_CCmax

.

3. I_CCactive while Embedded Erase or Embedded Program is in progress.

4. Automatic sleep mode enables the low power mode when addresses remain stable for t_ACC+ 30 ns.

5. Not 100% tested.

October 10, 2006 21521D6

Am29LV200B

25

D A T A S H E E T

DC CHARACTERISTICS (Continued)

Zero Power Flash

20

15

10

5

0

500

1000

1500

2000

2500

3000

3500

4000

Time in ns

Note: Addresses are switching at 1 MHz

Figure 9.

I

Current vs. Time (Showing Active and Automatic Sleep Currents)

CC1

10

8

3.6 V

2.7 V

6

4

2

0

1

2

3

4

5

Frequency in MHz

Note: T = 25 °C

Figure 10. Typical I

vs. Frequency

CC1

26

Am29LV200B

21521D6 October 10, 2006

D A T A S H E E T

TEST CONDITIONS

Table 7. Test Specifications

3.3 V

-55R,

-70

-90,

-120

Test Condition

Output Load

Unit

2.7 kΩ

1 TTL gate

Device

Under

Test

Output Load Capacitance, C_L

(including jig capacitance)

30

100

pF

C

L

6.2 kΩ

Input Rise and Fall Times

Input Pulse Levels

5

0.0–3.0

ns

V

Input timing measurement

reference levels

1.5

V

Note: Diodes are IN3064 or equivalent

Output timing measurement

reference levels

Figure 11. Test Setup

KEY TO SWITCHING WAVEFORMS

WAVEFORM

INPUTS

OUTPUTS

Steady

Changing from H to L

Changing from L to H

Don’t Care, Any Change Permitted

Does Not Apply

Changing, State Unknown

Center Line is High Impedance State (High Z)

3.0 V

0.0 V

1.5 V

Input

Measurement Level

Output

Figure 12. Input Waveforms and Measurement Levels

October 10, 2006 21521D6

Am29LV200B

27

D A T A S H E E T

AC CHARACTERISTICS

Read Operations

Parameter

Speed Option

JEDEC

Std Description

Test Setup

Min

-55R

-70

-90

-120 Unit

t_AVAV

t_RC

Read Cycle Time (Note 1)

55

70

90

120

ns

CE# = V_IL

OE# = V_IL

t_AVQV

t_ACCAddress to Output Delay

Max

55

70

90

t_ELQV

t_GLQV

t_EHQZ

t_GHQZ

t_CE

t_OE

t_DF

Chip Enable to Output Delay

OE# = V_ILMax

55

30

15

70

30

25

90

35

30

120

50

ns

Output Enable to Output Delay

Max

Min

Chip Enable to Output High Z (Note 1)

Output Enable to Output High Z (Note 1)

30

Read

0

Output Enable

Hold Time (Note 1)

t_OEH

Toggle and

Data# Polling

Min

10

ns

Output Hold Time From Addresses, CE# or

OE#, Whichever Occurs First (Note 1)

t_AXQX

t_OH

0

Notes:

1. Not 100% tested.

2. See Figure 11 and Table 7 for test specifications.

t_RC

Addresses Stable

t_ACC

Addresses

CE#

t_DF

t_OE

OE#

t_OEH

WE#

t_CE

t_OH

HIGH Z

Output Valid

Outputs

RESET#

RY/BY#

0 V

Figure 13. Read Operations Timings

28

Am29LV200B

21521D6 October 10, 2006

D A T A S H E E T

AC CHARACTERISTICS

Hardware Reset (RESET#)

Parameter

JEDEC

Std Description

Test Setup

Max

All Speed Options

Unit

RESET# Pin Low (During Embedded

t_READY

20

µs

Algorithms) to Read or Write (See Note)

RESET# Pin Low (NOT During Embedded

Algorithms) to Read or Write (See Note)

t_READY

Max

500

ns

t_RP

t_RH

RESET# Pulse Width

Min

500

50

20

0

ns

µs

ns

RESET# High Time Before Read (See Note)

t_RPDRESET# Low to Standby Mode

t_RBRY/BY# Recovery Time

Note: Not 100% tested.

RY/BY#

CE#, OE#

RESET#

t_RH

t_RP

t_Ready

Reset Timings NOT during Embedded Algorithms

Reset Timings during Embedded Algorithms

t_Ready

RY/BY#

t_RB

CE#, OE#

RESET#

t_RP

Figure 14. RESET# Timings

October 10, 2006 21521D6

Am29LV200B

29

D A T A S H E E T

AC CHARACTERISTICS

Word/Byte Configuration (BYTE#)

Parameter

Speed Options

JEDEC

Std

t_{ELFL/ ELFH}

t_FLQZ

t_FHQV

Description

-55R

-70

-90

-120

Unit

ns

t

CE# to BYTE# Switching Low or High

BYTE# Switching Low to Output HIGH Z

BYTE# Switching High to Output Active

Max

Min

5

15

55

25

70

30

90

30

ns

120

ns

CE#

OE#

BYTE#

t_ELFL

Data Output

(DQ0–DQ14)

Data Output

(DQ0–DQ7)

BYTE#

Switching

from word

to byte

DQ0–DQ14

Address

Input

DQ15

Output

mode

DQ15/A-1

t_FLQZ

t_ELFH

BYTE#

Switching

from byte

to word

Data Output

(DQ0–DQ7)

Data Output

(DQ0–DQ14)

DQ0–DQ14

DQ15/A-1

mode

Address

Input

DQ15

Output

t_FHQV

Figure 15. BYTE# Timings for Read Operations

CE#

The falling edge of the last WE# signal

WE#

BYTE#

t_SET

(t_AS

)

t_HOLD(t_AH

)

Note: Refer to the Erase/Program Operations table for t_ASand t_AHspecifications.

Figure 16. BYTE# Timings for Write Operations

Am29LV200B

30

21521D6 October 10, 2006

D A T A S H E E T

AC CHARACTERISTICS

Erase/Program Operations

Parameter

Speed Options

JEDEC

t_AVAV

Std

t_WC

t_AH

t_DS

t_WP

t_AS

t_DH

Description

-55R

55

-70

70

45

35

-90

90

45

35

-120

120

50

Unit

ns

Write Cycle Time (Note 1)

Address Hold Time

Data Setup Time

Write Pulse Width

Address Setup Time

Data Hold Time

Min

t_WLAX

t_DVWH

t_WLWH

t_AVWL

t_WHDX

Min

45

ns

20

50

ns

30

50

ns

0

ns

t_OESOutput Enable Setup Time

ns

Read Recovery Time Before Write

t_GHWL

Min

0

ns

(OE# High to WE# Low)

t_ELWL

t_WHEH

t_WHWL

t_CS

t_CH

CE# Setup Time

CE# Hold Time

Min

Typ

Min

Max

0

ns

t_WPHWrite Pulse Width High

30

9

Byte

t_WHWH1t_WHWH1Programming Operation (Note 2)

t_WHWH2t_WHWH2Sector Erase Operation (Note 2)

µs

Word

11

0.7

50

0

sec

µs

t_VCS

t_RB

V_CCSetup Time (Note 1)

Recovery Time from RY/BY#

ns

t_BUSYProgram/Erase Valid to RY/BY# Delay

90

ns

Notes:

1. Not 100% tested.

2. See the “Erase and Programming Performance” section for more information.

October 10, 2006 21521D6

Am29LV200B

31

D A T A S H E E T

AC CHARACTERISTICS

Program Command Sequence (last two cycles)

Read Status Data (last two cycles)

t_AS

PA

t_WC

Addresses

555h

PA

t_AH

CE#

OE#

t_CH

t_WHWH1

t_WP

WE#

Data

t_WPH

t_CS

t_DS

t_DH

PD

D_OUT

A0h

Status

t_BUSY

t_RB

RY/BY#

V_CC

t_VCS

Notes:

1. PA = program address, PD = program data, D_OUTis the true data at the program address.

2. Illustration shows device in word mode.

Figure 17. Program Operation Timings

32

Am29LV200B

21521D6 October 10, 2006

D A T A S H E E T

AC CHARACTERISTICS

Erase Command Sequence (last two cycles)

Read Status Data

VA

t_AS

SA

t_WC

VA

Addresses

CE#

2AAh

555h for chip erase

t_AH

t_CH

OE#

t_WP

WE#

t_WPH

t_WHWH2

t_CS

t_DS

t_DH

In

Data

Complete

55h

30h

Progress

10 for Chip Erase

t_BUSY

t_RB

RY/BY#

V_CC

t_VCS

Notes:

1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).

2. Illustration shows device in word mode.

Figure 18. Chip/Sector Erase Operation Timings

October 10, 2006 21521D6

Am29LV200B

33

D A T A S H E E T

AC CHARACTERISTICS

t_RC

VA

Addresses

VA

t_ACC

t_CE

CE#

t_CH

t_OE

OE#

WE#

t_OEH

t_DF

t_OH

High Z

DQ7

Valid Data

Complement

True

DQ0–DQ6

Valid Data

Status Data

True

Status Data

t_BUSY

RY/BY#

Note:VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read

cycle.

Figure 19. Data# Polling Timings (During Embedded Algorithms)

t_RC

Addresses

CE#

VA

t_ACC

t_CE

VA

t_CH

t_OE

OE#

WE#

t_OEH

t_DF

t_OH

High Z

DQ6/DQ2

RY/BY#

Valid Status

(first read)

Valid Status

Valid Data

(second read)

(stops toggling)

t_BUSY

Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read

cycle, and array data read cycle.

Figure 20. Toggle Bit Timings (During Embedded Algorithms)

34

Am29LV200B

21521D6 October 10, 2006

D A T A S H E E T

AC CHARACTERISTICS

Enter

Embedded

Erasing

Erase

Suspend

Enter Erase

Suspend Program

Erase

Resume

Erase

Erase Suspend

Read

Erase

Suspend

Program

Erase

Complete

WE#

Erase

Erase Suspend

Read

DQ6

DQ2

Note: The system may use OE# and CE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an

erase-suspended sector.

Figure 21. DQ2 vs. DQ6

Temporary Sector Unprotect

Parameter

JEDEC

Std

Description

All Speed Options

Unit

t_VIDR

V_IDRise and Fall Time (See Note)

Min

500

ns

RESET# Setup Time for Temporary Sector

Unprotect

t_RSP

4

µs

Note:Not 100% tested.

12 V

RESET#

0 or 3 V

t_VIDR

Program or Erase Command Sequence

CE#

WE#

t_RSP

RY/BY#

Figure 22. Temporary Sector Unprotect Timing Diagram

October 10, 2006 21521D6

Am29LV200B

35

D A T A S H E E T

AC CHARACTERISTICS

V_ID

V_IH

RESET#

SA, A6,

A1, A0

Valid*

Sector Protect/Unprotect

60h 60h

Valid*

Status

Verify

40h

Data

Sector Protect: 150 µs

Sector Unprotect: 15 ms

1 µs

CE#

WE#

OE#

* For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.

Figure 23. Sector Protect/Unprotect Timing Diagram

36

Am29LV200B

21521D6 October 10, 2006

D A T A S H E E T

AC CHARACTERISTICS

Alternate CE# Controlled Erase/Program Operations

Parameter

Speed Options

JEDEC

t_AVAV

Std

t_WC

t_AH

Description

-55R

55

-70

70

45

35

-90

90

45

35

-120

120

50

Unit

ns

Write Cycle Time (Note 1)

Address Hold Time

Data Setup Time

Min

t_ELAX

t_DVEH

t_ELEH

t_AVEL

45

ns

t_DS

35

50

ns

t_CP

CE# Pulse Width

35

50

ns

t_AS

Address Setup Time

Data Hold Time

0

ns

t_EHDX

t_DH

t_OES

ns

Output Enable Setup Time

ns

Read Recovery Time Before Write

(OE# High to WE# Low)

t_GHEL

Min

0

ns

t_WLEL

t_EHWH

t_EHEL

t_WS

t_WH

WE# Setup Time

WE# Hold Time

Min

Typ

0

ns

t_CPH

CE# Pulse Width High

30

9

Byte

Programming Operation

(Note 2)

t_WHWH1

t_WHWH2

Notes:

t_WHWH1

t_WHWH2

µs

Word

11

0.7

Sector Erase Operation (Note 2)

sec

1. Not 100% tested.

2. See the “Erase and Programming Performance” section for more information.

October 10, 2006 21521D6

Am29LV200B

37

D A T A S H E E T

AC CHARACTERISTICS

555 for program

PA for program

2AA for erase

SA for sector erase

555 for chip erase

Data# Polling

Addresses

PA

t_WC

t_WH

t_AS

t_AH

WE#

OE#

t_GHEL

t_{WHWH1 or 2}

t_CP

CE#

Data

t_WS

t_CPH

t_DS

t_BUSY

t_DH

DQ7#

D_OUT

t_RH

A0 for program

55 for erase

PD for program

30 for sector erase

10 for chip erase

RESET#

RY/BY#

Notes:

1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data written to the device.

2. Figure indicates the last two bus cycles of the command sequence.

3. Word mode address used as an example.

Figure 24. Alternate CE# Controlled Write Operation Timings

38

Am29LV200B

21521D6 October 10, 2006

D A T A S H E E T

ERASE AND PROGRAMMING PERFORMANCE

Parameter

Typ (Note 1)

Max (Note 2)

Unit

s

Comments

Sector Erase Time

Chip Erase Time

0.7

5

15

Excludes 00h programming

prior to erasure (Note 4)

s

Byte Programming Time

Word Programming Time

9

300

360

6.9

µs

s

11

2.3

1.5

Excludes system level

overhead (Note 5)

Byte Mode

Word Mode

Chip Programming Time

(Note 3)

4.5

s

Notes:

1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V_CC, 1,000,000 cycles. Additionally,

programming typicals assume checkerboard pattern.

2. Under worst case conditions of 90°C, V_CC= 2.7 V (3.0 V for regulated speed options), 1,000,000 cycles.

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes

program faster than the maximum program times listed.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See

Table 5 for further information on command definitions.

6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.

LATCHUP CHARACTERISTICS

Description

Min

Max

Input voltage with respect to V_SSon all pins except I/O pins

(including A9, OE#, and RESET#)

–1.0 V

12.5 V

Input voltage with respect to V_SSon all I/O pins

V_CCCurrent

–1.0 V

V_CC+ 1.0 V

+100 mA

–100 mA

Includes all pins except V_CC. Test conditions: V_CC= 3.0 V, one pin at a time.

TSOP AND SO PIN CAPACITANCE

Parameter

Symbol

Parameter Description

Input Capacitance

Test Setup

V_IN= 0

Typ

6

Max

7.5

12

Unit

pF

C_IN

C_OUT

C_IN2

Output Capacitance

Control Pin Capacitance

V_OUT= 0

V_IN= 0

8.5

7.5

pF

9

pF

Notes:

1. Sampled, not 100% tested.

2. Test conditions T_A= 25°C, f = 1.0 MHz.

DATA RETENTION

Parameter

Test Conditions

Min

10

Unit

Years

150°C

125°C

Minimum Pattern Data Retention Time

20

October 10, 2006 21521D6

Am29LV200B

39

D A T A S H E E T

PHYSICAL DIMENSIONS*

TS 048—48-Pin Standard TSOP

Dwg rev AA; 10/99

* For reference only. BSC is an ANSI standard for Basic Space Centering.

40

Am29LV200B

21521D6 October 10, 2006

D A T A S H E E T

PHYSICAL DIMENSIONS

SO 044—44-Pin Small Outline Package

Dwg rev AC; 10/99

October 10, 2006 21521D6

Am29LV200B

41

D A T A S H E E T

PHYSICAL DIMENSIONS

FBA048—48-Ball Fine-Pitch Ball Grid Array, 0.80 mm pitch, 6 x 8 mm package

Dwg rev AF; 10/99

42

Am29LV200B

21521D6 October 10, 2006

D A T A S H E E T

Operating Ranges

The V supply voltage for regulated devices is 3.0–

REVISION SUMMARY

CC

Revision A (January 1998)

3.6 V. The V

supply voltage for full voltage range

CC

devices is 2.7–3.6 V.

Initial release.

Revision C+2 (May 17, 1999)

Revision B (July 1998)

Ordering Information

Global

Boot Code Sector Architecture: Added “B = Bottom

Sector”.

Expanded data sheet from Advanced Information to

Preliminary version.

Distinctive Characteristics

Revision C+3 (June 1, 1999)

Physical Dimensions

Changed “Manufactured on 0.35 µm process technology”

to “Manufactured on 0.32 µm process technology”.

TS 048: The drawing previously showed the TSR 048

package; now shows the proper package.

General Description

Second paragraph: Changed “This device is manufac-

tured using AMD’s 0.35 µm process technology” to

“This device is manufactured using AMD’s 0.32 µm

process technology”.

Revision C+4 (July 2, 1999)

Global

Deleted references to the 50R speed option.

Revision C (January 1999)

Global

Revision C+5 (August 25, 1999)

Ordering Information

Deleted the 80 ns speed option. Added the -50R and

-55R speed options.

Valid Combinations: Restored package options for

Am29LV200BT-70 and Am29LV200BB-70.

Distinctive Characteristics

Revision D (November 18, 1999)

Added 20-year data retention subbullet.

AC Characteristics—Figure 17. Program

Operations Timing and Figure 18. Chip/Sector

Erase Operations

Connection Diagrams

Reverse TSOP: Moved the circle marking to upper right

corner from the upper left corner, added an upside

down triangle marking to the upper left corner.

Deleted t

high.

and changed OE# waveform to start at

GHWL

Ordering Information

Physical Dimensions

Package Type: Added “S = 44-Pin Small Outline Package

(SO 044)”.

Replaced figures with more detailed illustrations.

DC Characteristics—CMOS Compatible

Revision D+1 (November 13, 2000)

Global

I

, I

: Added Note “Maximum I spec-

CC1 CC2 CC3 CC4 CC

ifications are tested with V = V

.

CCmax

CC

Added table of contents. Deleted burn-in option from

Ordering Information section.

AC Characteristics—Alternate CE# Controlled

Erase/Program Operations

Revision D+2 (April 12, 2002)

Global

Corrected speed options.

Erase and Programming Performance

Added FBA048 package.

Chip Erase Time: Changed Typical value to 5 s from

7 s.

Revision D+3 (June 11, 2004)

Ordering Information

Chip Programming Time: Changed Max value for Byte

Mode to 6.9 s from 6.8 s. Changed Max value for Word

Mode to 4.5 s from 4.3 s.

Added Pb-free packages.

Note 2: Added “(3.0 V for regulated speed options)”.

Revision D+4 (September 20, 2005)

Corrected Valid Combinations table.

Revision C+1 (March 27, 1999)

Ordering Information

Revision D+5 (January 4, 2006)

Removed TSR048 48-pin Reverse TSOP option.

Corrected the example part number to include the “R”

after “-50.”

October 10, 2006 21521D6

Am29LV200B

43

D A T A S H E E T

Erase and Program Operations table

Changed t to a maximum specification.

Revision D6 (October 10, 2006)

Global

BUSY

Added notice on product availability to cover sheet and

first page of data sheet.

Colophon

The products described in this document are designed, developed and manufactured as contemplated for general use, including without limita-

tion, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as con-

templated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the

public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,

aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for

any use where chance of failure is intolerable ( i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to

you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor de-

vices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design mea-

sures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating

conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign

Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior au-

thorization by the respective government entity will be required for export of those products.

Trademarks

marks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are

for identification purposes only and may be trademarks of their respective companies.

trademarks of Spansion Inc. Other names are for informational purposes only and may be trademarks of their respective owners.

44

Am29LV200B

21521D6 October 10, 2006


型号：	L200BT90VD
厂家：	AMD
描述：	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位（ 256千×8位/ 128的K× 16位） CMOS 3.0伏只引导扇区闪存闪存
文件：	总46页 (文件大小：1318K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

L200BT90VD [AMD]

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