DCR1003SN0909 [AMMSEMI]

High Power Button Capsule Thyristor;


型号：	DCR1003SN0909
厂家：	American Microsemiconductor
描述：	High Power Button Capsule Thyristor 栅栅极
文件：	总4页 (文件大小：2197K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ꢀ

HighꢀPowerꢀ

ButtonꢀCapsuleꢀ

Thyristorꢀ

DCR1003ꢀSeriesꢀ

DCR1004ꢀSeriesꢀ

I_{T(AV)ꢀ=ꢀ1540A}

ꢀ

V_{RRMꢀ=ꢀ1700V}

ꢀ

Typeꢀ

Non-Repetitiveꢀ

PeakꢀVoltagesꢀ

Repetitiveꢀ

OUTLINEꢀNꢀ

ꢀ

Numberꢀ

PeakꢀVoltagesꢀ

V_DSMꢀV_RSM

ꢀ

V_DRMꢀV_RRMꢀ

DCR1003SN1818ꢀꢀDCR1004SN1818ꢀ

DCR1003SN1717ꢀꢀDCR1004SN1717ꢀ

DCR1003SN1616ꢀꢀDCR1004SN1616ꢀ

DCR1003SN1515ꢀꢀDCR1004SN1515ꢀ

DCR1003SN1414ꢀꢀDCR1004SN1414ꢀ

DCR1003SN1313ꢀꢀDCR1004SN1313ꢀ

DCR1003SN1212ꢀꢀDCR1004SN1212ꢀ

DCR1003SN1111ꢀꢀDCR1004SN1111ꢀ

DCR1003SN1010ꢀꢀDCR1004SN1010ꢀ

DCR1003SN0909ꢀꢀDCR1004SN0909ꢀ

DCR1003SN0808ꢀꢀDCR1004SN0808ꢀ

DCR1003SN0707ꢀꢀDCR1004SN0707ꢀ

DCR1003SN0606ꢀꢀDCR1004SN0606ꢀ

DCR1003SN0505ꢀꢀDCR1004SN0505ꢀ

DCR1003SN0404ꢀꢀDCR1004SN0404ꢀ

DCR1003SN0303ꢀꢀDCR1004SN0303ꢀ

DCR1003SN0202ꢀꢀDCR1004SN0202ꢀ

DCR1003SN0101ꢀꢀDCR1004SN0101ꢀ

1800ꢀ

1700ꢀ

1600ꢀ

1500ꢀ

1400ꢀ

1300ꢀ

1200ꢀ

1100ꢀ

1000ꢀ

900ꢀ

1700.ꢀ

1600.ꢀ

1500.ꢀ

1400.ꢀ

1300.ꢀ

1200.ꢀ

1100.ꢀ

1000.ꢀ

900.ꢀ

800.ꢀ

700.ꢀ

600.ꢀ

500.ꢀ

400.ꢀ

300.ꢀ

200.ꢀ

150.ꢀ

75.ꢀ

800ꢀ

700ꢀ

600ꢀ

500ꢀ

400ꢀ

300ꢀ

200ꢀ

100ꢀ

ꢀ

CURRENTꢀRATINGS―ꢀDOUBLEꢀSIDEꢀCOOLEDꢀ

ꢀ

I_T(AV)

ꢀ

Meanꢀon-stateꢀcurrentꢀ

RMSꢀvalueꢀ

HalfꢀwaveꢀresistiveꢀloadꢀT_HSꢀ=ꢀ55^oCꢀ

1540ꢀAꢀ

2420ꢀAꢀ

I_RMS

I_Tꢀ

ꢀ

T_HSꢀ=ꢀ55^oCꢀ

Continuousꢀ(direct)ꢀon-stateꢀcurrentꢀ

T_HSꢀ=ꢀ55^oCꢀ

2050ꢀAꢀ

R_(th(J-h)ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ Thermalꢀresistanceꢀjunctionꢀtoꢀ

Clampingꢀforceꢀ19.5kNꢀ

d.c.ꢀ .026^OC/Wꢀ

Half-waveꢀ .028^OC/Wꢀ

3-phaseꢀ .030^OC/Wꢀ

ꢀ

heatsinkꢀsurfaceꢀ

(withꢀmountingꢀgrease)ꢀ

ꢀ

CURRENTꢀRATINGS―SINGLEꢀSIDEꢀCOOLEDꢀ

I_T(AV)ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ Meanꢀon-stateꢀcurrentꢀ

ꢀ

HalfꢀwaveꢀresistiveꢀloadꢀT_HSꢀ=ꢀ55^oCꢀ

T_HSꢀ=ꢀ55^oCꢀ

870ꢀAꢀ

1365ꢀAꢀ

1060ꢀAꢀ

I_RMSꢀꢀꢀ

I_Tꢀ

RMSꢀvalueꢀ

Continuousꢀ(direct)ꢀon-stateꢀcurrentꢀ

T_HSꢀ=ꢀ55^oCꢀ

R_(th(J-h)ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ Thermalꢀresistanceꢀjunctionꢀtoꢀ

Clampingꢀforceꢀ19.5kNꢀ

(withꢀmountingꢀgrease)ꢀ

ꢀ

d.c.ꢀ .06^oC/Wꢀ

ꢀ

heatsinkꢀsurfaceꢀ

Half-waveꢀ .062^oC/Wꢀ

3-phaseꢀ .064^oC/Wꢀ

SURGEꢀRATINGSꢀ

ꢀ

I_TRM

ꢀ

Repetitiveꢀpeakꢀon-stateꢀcurrentꢀ

Sinusoidalꢀwaveformꢀconductionꢀangleꢀ

ɬꢀ=ꢀ30^oꢀꢀꢀT_HSꢀ=ꢀ55^oCꢀ

14920ꢀAꢀ

ꢀ

I²tꢀꢀꢀ

ꢀ

I²tꢀforꢀfusingꢀ

10mSꢀhalfꢀsineꢀT_Jꢀ=ꢀ125^oCꢀ

3mSꢀhalfꢀsineꢀT_Jꢀ=ꢀ125^oCꢀ

Withꢀ50%ꢀV_RSMꢀTJꢀ=ꢀ125^oCꢀ

FromꢀV_Dꢀtoꢀ1000A,ꢀGateꢀsourceꢀ10Vꢀ

5Ωꢀriseꢀtimeꢀ0.5µs,ꢀT_Jꢀ=ꢀ125^oCꢀ

Voltageꢀꢀ=ꢀ67%V_DRM,ꢀT_caseꢀ=ꢀ125^oCꢀ

ꢀ

2205000ꢀA²secꢀ

ꢀ

1540000ꢀA²secꢀ

I_TSM

ꢀ

Surgeꢀ(non-repetitive)ꢀon-stateꢀcurrentꢀ

21000ꢀAꢀ

dl_T/dt_ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ Rateꢀofꢀriseꢀofꢀon-stateꢀcurrentꢀ

100A/µsꢀ

ꢀ

dv/dt*_ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ Maxꢀlinearꢀrateꢀofꢀriseꢀofꢀoff-stateꢀvoltageꢀ

*Higherꢀvaluesꢀavailable.ꢀ

300ꢀV/ꢀµsꢀ

ꢀ

GATEꢀRATINGSꢀ

ꢀ

V_FGM

V_FGN

V_RGM

ꢀ

Peakꢀforwardꢀgateꢀvoltageꢀ

Peakꢀreverseꢀgateꢀvoltageꢀ

Peakꢀforwardꢀgateꢀcurrentꢀ

Peakꢀgateꢀpowerꢀ

Anodeꢀpositiveꢀwithꢀrespectꢀtoꢀcathodeꢀ

30ꢀVꢀ

0.25ꢀVꢀ

5ꢀVꢀ

ꢀ

Anodeꢀnegativeꢀwithꢀrespectꢀtoꢀcathodeꢀ

ꢀ

I_FGM

P_GM

P_Gꢀ

ꢀ

Anodeꢀpositiveꢀwithꢀrespectꢀtoꢀcathodeꢀ

10ꢀAꢀ

150ꢀWꢀ

10ꢀWꢀ

ꢀ

135^OCꢀ

125^OCꢀ

Pulseꢀwidthꢀ=ꢀ100µꢀ

Meanꢀgateꢀpowerꢀ

ꢀ

TEMPERATUREꢀ&ꢀFREQUENCYꢀRATINGSꢀ

ꢀ

T_VJ

ꢀ

Virtualꢀjunctionꢀtemperatureꢀ

ꢀ

On-stateꢀ(conduction)ꢀ

Off-stateꢀ(blocking)ꢀ

T_stg

Fꢀꢀꢀ

ꢀ

Storageꢀtemperatureꢀrangeꢀ

Frequencyꢀrangeꢀ

ꢀ

-55ꢀtoꢀ 125^ꢀOCꢀ

10ꢀtoꢀ 400ꢀHzꢀ

ꢀ

DocumentꢀPageꢀ1ꢀofꢀ4ꢀ

Tel.ꢀ1-973-377-9566ꢀꢀꢀFax.ꢀ1-973-377-3078ꢀ

133ꢀKingsꢀRoadꢀ

ꢀꢀꢀꢀ Madison,ꢀNewꢀJerseyꢀꢀ07940ꢀ

UnitedꢀStatesꢀofꢀAmericaꢀ

ꢀ

Revisedꢀ05/2016ꢀ

DEKRAꢀCertificationꢀInc.ꢀ

©ꢀ2016ꢀAmericanꢀMicrosemiconductor,ꢀInc.ꢀ

Specificationsꢀareꢀsubjectꢀtoꢀchangeꢀwithoutꢀnoticeꢀ

www.americanmicrosemi.comꢀ

AS9100CꢀandꢀISOꢀ9001:2008ꢀ

CertificateꢀNo.ꢀ131519.01ꢀ

ꢀ

DCR1003ꢀSeriesꢀ

DCR1004ꢀSeriesꢀ

I_T(AV)ꢀ=ꢀ1540ꢀAꢀ

V_RRMꢀ=ꢀ1700ꢀVꢀ

ꢀ

CHARACTERISTICS―ꢀT_caseꢀ=ꢀ25^oCꢀunlessꢀotherwiseꢀstatedꢀ

ꢀ

LIMITꢀ

ꢀ

5%ꢀ

Typꢀ

95%ꢀ

Maxꢀ

Unitsꢀ

ꢀ

V_TM

ꢀ

On-stateꢀvoltageꢀ

ꢀ

Atꢀ2900Aꢀpeakꢀ

ꢀ

T_caseꢀ=ꢀ125^oCꢀ

DCRꢀ1003ꢀ

ꢀ

1.5ꢀ

Vꢀ

ꢀ

DCR1004ꢀ

ꢀ

1.625ꢀ

I_DM

ꢀ

Peakꢀoff-stateꢀcurrentꢀ

Peakꢀreverseꢀcurrentꢀ

Latchingꢀcurrentꢀ

Holdingꢀcurrentꢀ

Delayꢀtimeꢀ

ꢀ

50ꢀ

mAꢀ

µsꢀ

ꢀ

I_RM

I_Lꢀ

I_Hꢀ

tdꢀ

tqꢀ

ꢀ

T_caseꢀ=ꢀ125^oCꢀ

ꢀ

50ꢀ

V_Dꢀ=ꢀ5VꢀT_pꢀ=ꢀ30µSꢀ

V_Dꢀ=ꢀ5VꢀGateꢀopenꢀcircuitꢀ

ꢀ

120ꢀ

ꢀ

77ꢀ

ꢀ

V_Dꢀ=ꢀ100V,ꢀGateꢀsourceꢀ=ꢀ25Vꢀ5Ωꢀ

I_Tꢀ=ꢀ800A,ꢀV_RRMꢀ=ꢀ50V,ꢀdl_RR/dtꢀ=ꢀ20A/µSꢀ

V_DRꢀ=ꢀfullꢀratedꢀV_D,ꢀ

dV_DR/dtꢀ=ꢀ20V/µsꢀIinearꢀ,ꢀT_caseꢀ=ꢀ125^oCꢀ

0.58ꢀ

0.8ꢀ

1.52ꢀ

ꢀ

Circuitꢀcommutatedꢀ

Turn-offꢀtimeꢀ

90ꢀ

215ꢀ

380ꢀ

ꢀ

V_GT

V_GD

I_GT

ꢀ

Gateꢀtriggerꢀvoltageꢀ

Gateꢀnon-triggerꢀvoltageꢀ

Gateꢀtriggerꢀcurrentꢀ

V_DRMꢀ=ꢀ5Vꢀ

ꢀ

3.5ꢀ

0.25ꢀ

200ꢀ

Vꢀ

ꢀ

AtꢀV_DRM,ꢀT_caseꢀ=ꢀ5Vꢀ

V_DWMꢀ=ꢀ5Vꢀ

Vꢀ

ꢀ

mAꢀ

ꢀ

DocumentꢀPageꢀ2ꢀofꢀ4ꢀ

Tel.ꢀ1-973-377-9566ꢀꢀꢀFax.ꢀ1-973-377-3078ꢀ

133ꢀKingsꢀRoadꢀ

ꢀꢀꢀꢀ Madison,ꢀNewꢀJerseyꢀꢀ07940ꢀ

UnitedꢀStatesꢀofꢀAmericaꢀ

ꢀ

Revisedꢀ05/2016ꢀ

DEKRAꢀCertificationꢀInc.ꢀ

Specificationsꢀareꢀsubjectꢀtoꢀchangeꢀwithoutꢀnoticeꢀ

www.americanmicrosemi.comꢀ

AS9100CꢀandꢀISOꢀ9001:2008ꢀ

CertificateꢀNo.ꢀ131519.01ꢀ

ꢀ

DCR1003ꢀSeriesꢀ

DCR1004ꢀSeriesꢀ

I_T(AV)ꢀ=ꢀ1540ꢀAꢀ

V_RRMꢀ=ꢀ1700ꢀVꢀ

T-25-21ꢀ

ꢀꢀ

ꢀ

DocumentꢀPageꢀ3ꢀofꢀ4ꢀ

Tel.ꢀ1-973-377-9566ꢀꢀꢀFax.ꢀ1-973-377-3078ꢀ

133ꢀKingsꢀRoadꢀ

ꢀꢀꢀꢀ Madison,ꢀNewꢀJerseyꢀꢀ07940ꢀ

UnitedꢀStatesꢀofꢀAmericaꢀ

ꢀ

Revisedꢀ05/2016ꢀ

DEKRAꢀCertificationꢀInc.ꢀ

Specificationsꢀareꢀsubjectꢀtoꢀchangeꢀwithoutꢀnoticeꢀ

www.americanmicrosemi.comꢀ

AS9100CꢀandꢀISOꢀ9001:2008ꢀ

CertificateꢀNo.ꢀ131519.01ꢀ

ꢀ

DCR1003ꢀSeriesꢀ

DCR1004ꢀSeriesꢀ

I_T(AV)ꢀ=ꢀ1540ꢀAꢀ

V_RRMꢀ=ꢀ1700ꢀVꢀ

ꢀ

DocumentꢀPageꢀ4ꢀofꢀ4ꢀ

Tel.ꢀ1-973-377-9566ꢀꢀꢀFax.ꢀ1-973-377-3078ꢀ

133ꢀKingsꢀRoadꢀ

ꢀꢀꢀꢀ Madison,ꢀNewꢀJerseyꢀꢀ07940ꢀ

UnitedꢀStatesꢀofꢀAmericaꢀ

ꢀ

Revisedꢀ05/2016ꢀ

DEKRAꢀCertificationꢀInc.ꢀ

Specificationsꢀareꢀsubjectꢀtoꢀchangeꢀwithoutꢀnoticeꢀ

www.americanmicrosemi.comꢀ

AS9100CꢀandꢀISOꢀ9001:2008ꢀ

CertificateꢀNo.ꢀ131519.01ꢀ

ꢀ

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