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0
MSYSTEM
0
MSYSTEM
ARB-4123-R
Limit Alarms (potentiometer adj.) A-UNIT
0
MSYSTEM
0
MSYSTEM
1
TE
0
TE
0
TE
PBHV9050Z
500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistorProduction
0
NEXPERIA
0
XTAITQ
0
XTAITQ
0
MSYSTEM
0
MSYSTEM
KR-62-H
Plug-in Signal Conditioners K-UNIT
0
MSYSTEM
0
MSYSTEM
ADN-113-D
Limit Alarms (potentiometer adj.) A-UNIT
0
MSYSTEM
MIO-5373U-U7A1
8th Gen. Intel® Core⢠i7/i5/i3/Celeron* U-Series 3.5
0
ADVANTECH
0
SUNTSU
0
MSYSTEM
0
MSYSTEM
3
WILLSEMI
0
XTAITQ
IPD18DP10LM
DPAK 封装型 100 V OptiMOS™ P 沟道 MOSFET 是面向电池管理、负载开关和反极性保护应用的全新技术。P 沟道器件的主要优势在于降低中低功率应用的设计复杂度。此类产品可轻松连接 MCU，开关速度快且雪崩能力强，尤其适合质量要求高的应用。器件支持逻辑电平，具备较宽的 RDS(on) 范围和低 Qg，低负载下效率较高。
0
INFINEON
1
TE
0
SUNTSU
1
TE
FLMS-Z-BK
Space-saving Plug-in Signal Conditioners F-UNIT
0
MSYSTEM
0
SUNTSU
1
CHERRY
0
SUNTSU
FMS-D-K/Q
Space-saving Plug-in Signal Conditioners F-UNIT
0
MSYSTEM
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KYOCERA AVX
AMPHENOL
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GLENAIR
ITT
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ABRACON
MOLEX
VICOR
KEMET
MTRONPTI
TI
PANASONIC
CTS
SCHURTER
KNOWLES
MURATA
TE
TOREX
SILICON
BOURNS
GOLLEDGE
STMICROELECTRONICS
RCD
BEL
NXP
MICROCHIP
TDK
KOA
INFINEON
FOXCONN
EUROQUARTZ
MAXIM
LITTELFUSE
VCC
RENESAS
CDE
IDT
AVAGO
HONEYWELL
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FH
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APITECH
ROHM
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