13PD150-ST [ANADIGICS]
High Performance InGaAs p-i-n Photodiode; 高性能的InGaAs的p-i - n光电二极管
| 型号： | 13PD150-ST |
| 厂家： | 
ANADIGICS, INC |
| 描述： | High Performance InGaAs p-i-n Photodiode |
| 文件： | 总1页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Performance InGaAs p-i-n Photodiode
‘ST’ Active Device Mount
13PD150-ST
The 13PD150-ST, an InGaAs photodiode with a 150mm-diameter photosensitive region
packaged in a TO-46 header and aligned in an AT&T ST active device mount, is intended for
high coupling efficiency to multi-mode fiber in moderate-to-high speed applications. Planar
semiconductor design and dielectric passivation provide low noise performance. Reliability is
assured by hermetic sealing and a 100% purge burn-in ( 200oC, 15 hours, Vr = 20V ). The ST
receptacle is suitable for bulkhead and PC board mounting.
Features
Planar Structure
Dielectric Passivation
100% Purge Burn-In
High Responsivity
Device Characteristics:
Parameters
Operating Voltage
Dark Current
Capacitance
Responsivity
Rise/Fall
Test Conditions
Min Typ Max
Units
-
-5V
-5V
1300nm
-
-
-
-20
Volts
-
-
0.5
1.5
2.5
2.25
nA
pF
0.7
-
0.8
-
-
0.5
A/W
ns
Absolute Maximum Ratings
Reverse Voltage
20 Volts
Forward Current
Reverse Current
5 mA
1 mA
Operating Temperature
Storage Temperature
Soldering Temperature
-40oC to + 85oC
-40oC to + 85oC
250oC
829 Flynn Road, Camarillo, CA 93012
tel(805)445-4500 fax(805)445-4502
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