AS29LV800T-90TC [ANADIGICS]
3V 1M】8/512K】16 CMOS Flash EEPROM; 3V 1M × 8 / 512K × 16的CMOS闪存EEPROM型号: | AS29LV800T-90TC |
厂家: | ANADIGICS, INC |
描述: | 3V 1M】8/512K】16 CMOS Flash EEPROM |
文件: | 总25页 (文件大小:440K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AS29LV800
March 2001
®
3V 1M × 8/512K × 16 CMOS Flash EEPROM
• Low power consumption
- 200 nA typical automatic sleep mode current
Features
• Organization: 1M×8/512K×16
- 200 nA typical standby current
- 10 mA typical read current
• JEDEC standard software, packages and pinouts
- 48-pin TSOP
- 44-pin SO; availability TBD
• Detection of program/erase cycle completion
- DQ7 DATA polling
- DQ6 toggle bit
- DQ2 toggle bit
- RY/BY output
• Erase suspend/resume
• Sector architecture
- One 16K; two 8K; one 32K; and fifteen 64K byte sectors
- One 8K; two 4K; one 16K; and fifteen 32K word sectors
- Boot code sector architecture—T (top) or B (bottom)
- Erase any combination of sectors or full chip
• Single 2.7-3.6V power supply for read/write operations
• Sector protection
• High speed 70/80/90/120 ns address access time
• Automated on-chip programming algorithm
- Automatically programs/verifies data at specified address
• Automated on-chip erase algorithm
- Automatically preprograms/erases chip or specified
sectors
- Supports reading data from or programming data to a
sector not being erased
• Low V write lock-out below 1.5V
• Hardware RESET pin
- Resets internal state machine to read mode
CC
• 10 year data retention at 150C
• 100,000 write/erase cycle endurance
Pin arrangement
Logic block diagram
48-pin TSOP
44-pin SO
Sector protect/
erase voltage
switches
RY/BY
DQ0–DQ15
V
CC
RY/BY
A18
A17
A7
1
44
RESET
WE
V
2
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
SS
Erase voltage
generator
Input/output
buffers
3
A8
RESET
4
A9
A6
5
A10
A11
A12
A13
A14
A15
A16
BYTE
Program/erase
control
A5
6
WE
A4
7
BYTE
A3
8
Program voltage
generator
Command
register
A2
9
AS29LV800
A1
10
11
12
13
14
15
16
17
18
19
20
21
22
A0
STB
Chip enable
Output enable
Logic
Data latch
CE
CE
OE
V
V
SS
SS
OE
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
DQ15/A-1
DQ7
A-1
DQ14
DQ6
Y decoder
Y gating
STB
DQ13
DQ5
V
detector
Timer
CC
DQ12
DQ4
X decoder
Cell matrix
V
CC
A0–A18
Selection guide
29LV800-70R* 29LV800-80 29LV800-90 29LV800-120
Unit
ns
Maximum access time
tAA
70
70
30
80
80
30
90
90
35
120
120
50
Maximum chip enable access time
Maximum output enable access time
* Regulated voltage range of 3.0 to 3.6V
tCE
ns
tOE
ns
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P. 1 of 25
Copyright © Alliance Semiconductor. All rights reserved.
AS29LV800
March 2001
®
Functional description
The AS29LV800 is an 8 megabit, 3.0 volt Flash memory organized as 1 Megabyte of 8 bits/512Kbytes of 16 bits each. For
flexible erase and program capability, the 8 megabits of data is divided into nineteen sectors: one 16K, two 8K, one 32K, and
fifteen 64k byte sectors; or one 8K, two 4K, one 16K, and fifteen 32K word sectors. The ×8 data appears on DQ0–DQ7; the
×16 data appears on DQ0–DQ15. The AS29LV800 is offered in JEDEC standard 48-pin TSOP and 44-pin SOP packages. This
device is designed to be programmed and erased in-system with a single 3.0V VCC supply. The device can also be
reprogrammed in standard EPROM programmers.
The AS29LV800 offers access times of 70/80/90/120 ns, allowing 0-wait state operation of high speed microprocessors. To
eliminate bus contention the device has separate chip enable (CE), write enable (WE), and output enable (OE) controls. Word
mode (×16 output) is selected by BYTE = high. Byte mode (×8 output) is selected by BYTE = low.
The AS29LV800 is fully compatible with the JEDEC single power supply Flash standard. Write commands are sent to the
command register using standard microprocessor write timings. An internal state-machine uses register contents to control the
erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase
operations. Read data from the device occurs in the same manner as other Flash or EPROM devices. Use the program command
sequence to invoke the automated on-chip programming algorithm that automatically times the program pulse widths and
verifies proper cell margin. Use the erase command sequence to invoke the automated on-chip erase algorithm that
preprograms the sector (if it is not already programmed before executing the erase operation), times the erase pulse widths,
and verifies proper cell margin.
Boot sector architecture enables the system to boot from either the top (AS29LV800T) or the bottom (AS29LV800B) sector.
Sector erase architecture allows specified sectors of memory to be erased and reprogrammed without altering data in other
sectors. A sector typically erases and verifies within 1.0 seconds. Hardware sector protection disables both program and erase
operations in all, or any combination of, the nineteen sectors. The device provides true background erase with Erase Suspend,
which puts erase operations on hold to either read data from, or program data to, a sector that is not being erased. The chip
erase command will automatically erase all unprotected sectors.
A factory shipped AS29LV800 is fully erased (all bits = 1). The programming operation sets bits to 0. Data is programmed into
the array one byte at a time in any sequence and across sector boundaries. A sector must be erased to change bits from 0 to 1.
Erase returns all bytes in a sector to the erased state (all bits = 1). Each sector is erased individually with no effect on other
sectors.
The device features single 3.0V power supply operation for Read, Write, and Erase functions. Internally generated and
regulated voltages are provided for the Program and Erase operations. A low VCC detector automatically inhibits write
operations during power transtitions. The RY/BY pin, DATA polling of DQ7, or toggle bit (DQ6) may be used to detect end of
program or erase operations. The device automatically resets to the read mode after program/erase operations are completed.
DQ2 indicates which sectors are being erased.
The AS29LV800 resists accidental erasure or spurious programming signals resulting from power transitions. Control register
architecture permits alteration of memory contents only after successful completion of specific command sequences. During
power up, the device is set to read mode with all program/erase commands disabled when VCC is less than VLKO (lockout
voltage). The command registers are not affected by noise pulses of less than 5 ns on OE, CE, or WE. To initiate write
commands, CE and WE must be logical zero and OE a logical 1.
When the device’s hardware RESET pin is driven low, any program/erase operation in progress is terminated and the internal
state machine is reset to read mode. If the RESET pin is tied to the system reset circuitry and a system reset occurs during an
automated on-chip program/erase algorithm, data in address locations being operated on may become corrupted and requires
rewriting. Resetting the device enables the system’s microprocessor to read boot-up firmware from the Flash memory.
The AS29LV800 uses Fowler-Nordheim tunnelling to electrically erase all bits within a sector simultaneously. Bytes are
programmed one at a time using EPROM programming mechanism of hot electron injection.
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AS29LV800
®
Operating modes
Mode
CE
L
OE
L
WE
A0
L
A1
A6
L
A9
VID
VID
A9
X
RESET
H
DQ
ID read MFR code
ID read device code
Read
H
L
Code
Code
DOUT
High Z
High Z
DIN
L
L
H
H
A0
X
L
L
H
L
L
H
A1
X
A6
X
H
Standby
H
L
X
X
H
Output disable
Write
H
H
X
X
X
X
H
L
H
L
A0
L
A1
H
H
A6
L
A9
VID
VID
H
Enable sector protect
Sector unprotect
L
VID
VID
Pulse/L
Pulse/L
H
X
L
L
H
H
X
Temporary sector
unprotect
X
X
X
X
X
X
X
VID
X
Verify sector protect†
Verify sector unprotect†
Hardware Reset
L
L
X
L
L
X
H
H
X
L
L
X
H
H
X
L
VID
VID
X
H
H
L
Code
H
X
Code
High Z
L = Low (<V ) = logic 0; H = High (>V ) = logic 1; V = 10.0 1.0V; X = don’t care.
IL
IH
ID
In ×16 mode, BYTE = V . In ×8 mode, BYTE = V with DQ8-DQ14 in high Z and DQ15 = A-1.
IH
IL
†
Verification of sector protect/unprotect during A9 = V
ID.
Mode definitions
Item
Description
Selected by A9 = VID(9.5V–10.5V), CE = OE = A1 = A6 = L, enabling outputs.
When A0 is low (VIL) the output data = 52h, a unique Mfr. code for Alliance Semiconductor Flash products.
When A0 is high (VIH), DOUT represents the device code for the AS29LV800.
ID MFR code,
device code
Selected with CE = OE = L, WE = H. Data is valid in tACC time after addresses are stable, tCE after CE is low
and tOE after OE is low.
Read mode
Standby
Selected with CE = H. Part is powered down, and ICC reduced to <1.0 µA when CE = VCC 0.3V = RESET. If
activated during an automated on-chip algorithm, the device completes the operation before entering
standby.
Output disable Part remains powered up; but outputs disabled with OE pulled high.
Selected with CE = WE = L, OE = H. Accomplish all Flash erasure and programming through the command
register. Contents of command register serve as inputs to the internal state machine. Address latching occurs
on the falling edge of WE or CE, whichever occurs later. Data latching occurs on the rising edge WE or CE,
Write
whichever occurs first. Filters on WE prevent spurious noise events from appearing as write commands.
Hardware protection circuitry implemented with external programming equipment causes the device to
disable program and erase operations for specified sectors. For in-system sector protection, refer to Sector
protect algorithm on page 14.
Enable
sector protect
Disables sector protection for all sectors using external programming equipment. All sectors must be
protected prior to sector unprotection. For in-system sector unprotection, refer to Sector unprotect algorithm
on page 14.
Sector
unprotect
Verifies write protection for sector. Sectors are protected from program/erase operations on commercial
programming equipment. Determine if sector protection exists in a system by writing the ID read command
Verify sector
protect/
sequence and reading location XXX02h, where address bits A12–18 select the defined sector addresses. A
unprotect
logical 1 on DQ0 indicates a protected sector; a logical 0 indicates an unprotected sector.
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AS29LV800
March 2001
®
Item
Description
Temporarily disables sector protection for in-system data changes to protected sectors. Apply +10V to RESET
to activate temporary sector unprotect mode. During temporary sector unprotect mode, program protected
sectors by selecting the appropriate sector address. All protected sectors revert to protected state on removal
of +10V from RESET.
Temporary
sector
unprotect
Resets the interal state machine to read mode. If device is programming or erasing when RESET = L, data
may be corrupted.
RESET
Deep
power down
Hold RESET low to enter deep power down mode (<1 µA). Recovery time to start of first read cycle is 50ns.
Enabled automatically when addresses remain stable for 300ns. Typical current draw is 1 µA. Existing data is
available to the system during this mode. If an address is changed, automatic sleep mode is disabled and new
data is returned within standard access times.
Automatic
sleep mode
Flexible sector architecture
Bottom boot sector architecture (AS29LV800B)
Top boot sector architecture (AS29LV800T)
Size
Size
Sector
0
×8
×16
(Kbytes)
×8
×16
(Kbytes)
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
32
8
00000h–03FFFh
04000h–05FFFh
06000h–07FFFh
08000h–0FFFFh
10000h–1FFFFh
20000h–2FFFFh
30000h–3FFFFh
40000h–4FFFFh
50000h–5FFFFh
60000h–6FFFFh
70000h–7FFFFh
80000h–8FFFFh
90000h–9FFFFh
A0000h–AFFFFh
B0000h–BFFFFh
C0000h–CFFFFh
D0000h–DFFFFh
E0000h–EFFFFh
F0000h–FFFFFh
00000h–01FFFh
02000h–02FFFh
03000h–03FFFh
04000h–07FFFh
08000h–0FFFFh
10000h–17FFFh
18000h–1FFFFh
20000h–27FFFh
28000h–2FFFFh
30000h–37FFFh
38000h–3FFFFh
40000h–47FFFh
48000h–4FFFFh
50000h–57FFFh
58000h–5FFFFh
60000h–67FFFh
68000h–6FFFFh
70000h–77FFFh
78000h–7FFFFh
16
8
00000h–0FFFFh
10000h–1FFFFh
20000h–2FFFFh
30000h–3FFFFh
40000h–4FFFFh
50000h–5FFFFh
60000h–6FFFFh
70000h–7FFFFh
80000h–8FFFFh
90000h–9FFFFh
A0000h–AFFFFh
B0000h–BFFFFh
C0000h–CFFFFh
D0000h–DFFFFh
E0000h–EFFFFh
F0000h–F7FFFh
F8000h–F9FFFh
FA000h–FBFFFh
FC000h–FFFFFh
00000h–07FFFh
08000h–0FFFFh
10000h–17FFFh
18000h–1FFFFh
20000h–27FFFh
28000h–2FFFFh
30000h–37FFFh
38000h–3FFFFh
40000h–47FFFh
48000h–4FFFFh
50000h–57FFFh
58000h–5FFFFh
60000h–67FFFh
68000h–6FFFFh
70000h–77FFFh
78000h–7BFFFh
7C000h–7CFFFh
7D000h–7DFFFh
7E000h–7FFFFh
1
2
8
3
32
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
8
16
In word mode, there are one 8K word, two 4K word, one 16K word, and fifteen 32K word sectors. Address range is A18–A-1 if BYTE = V ; address range is
IL
A18–A0 if BYTE = V
.
IH
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AS29LV800
®
ID Sector address table
Bottom boot sector address
(AS29LV800B)
Top boot sector address
(AS29LV800T)
Sector
0
A18 A17 A16 A15 A14 A13 A12
A18
0
A17
0
A16
0
A15 A13
A14
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
A12
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
0
0
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
1
X
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
1
1
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
1
0
0
0
2
1
1
0
0
1
3
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
0
1
4
0
1
0
5
0
1
0
6
0
1
1
7
0
1
1
8
1
0
0
9
1
0
0
10
11
12
13
14
15
16
17
18
1
0
1
1
0
1
1
1
0
1
1
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
1
1
1
1
1
1
X
READ codes
Mode
A18–A12
A6
L
A1
L
A0
Code
52h
MFR code (Alliance Semiconductor)
X
X
X
X
X
L
×8 T boot
×8 B boot
×16 T boot
×16 B boot
L
L
H
H
H
H
DAh
L
L
5Bh
Device code
L
L
22DAh
225Bh
L
L
01h protected
00h unprotected
Sector protection
Sector address
L
H
L
Key: L =Low (<V ); H = High (>V ); X =Don’t care
IL
IH
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AS29LV800
March 2001
®
Command format
1st bus cycle
2nd bus cycle
3rd bus cycle
4th bus cycle
Address
5th bus cycle
6th bus cycle
Required bus
write cycles
Command sequence
Reset/Read
Address
Data
Address
Data
Address
Data
Data
Address
Data
Address
Data
Read
Address
1
XXXh
F0h
Read Data
×16
Reset/Read
×8
555h
AAAh
2AAh
555h
555h
AAAh
Read
Data
3
AAh
AAh
AAh
AAh
55h
55h
55h
55h
F0h
90h
90h
90h
Read Address
01h
Device code
22DAh (T)
225Bh (B)
×16
×8
555h
AAAh
2AAh
555h
555h
AAAh
02h
Device code
DAh (T) 5Bh
(B)
×16
555h
AAAh
2AAh
555h
555h
AAAh
0052h
52h
Autoselect
00h
MFR code
3
ID Read
×8
XXX02h
Sector protection
0001h = protected
0000h = unprotected
×16
×8
555h
AAAh
2AAh
555h
555h
AAAh
XXX04h
Sector protection
0001h=protected
0000h=unprotected
×16
555h
AAAh
555
2AAh
555h
2AA
555h
AAAh
555
Program
×8
4
3
AAh
AAh
55h
55h
A0h
20h
Program Address Program Data
×16
Unlock bypass
×8
AAA
555
AAA
Program
address
Program
data
Unlock bypass program
Unlock bypass reset
2
2
XXX
XXX
A0h
90h
XXX
00h
55h
×16
Chip Erase
555h
AAAh
555h
AAAh
XXXh
XXXh
2AAh
555h
2AAh
555h
555h
AAAh
555h
AAAh
555h
AAh
2AAh
555h
2AAh
555h
555h
AAAh
6
6
AAh
AAh
80h
80h
55h
55h
10h
30h
×8
AAAh
×16
Sector Erase
×8
555h
AAh
AAAh
Sector
Address
55h
Sector Erase Suspend
Sector Erase Resume
1
1
B0h
30h
1
2
3
4
5
6
Bus operations defined in "Mode definitions," on page 3.
Reading from and programming to non-erasing sectors allowed in Erase Suspend mode.
Address bits A11-A18 = X = Don’t Care for all address commands except where Program Address and Sector Address are required.
Data bits DQ15-DQ8 are don’t care for unlock and command cycles.
The Unlock Bypass command must be initiated before the Unlock Bypass Program command.
The Unlock Bypass Reset command returns the device to reading array data when it is in the unlock bypass mode.
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AS29LV800
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Command definitions
Item
Description
Initiate read or reset operations by writing the Read/Reset command sequence into the command
register. This allows the microprocessor to retrieve data from the memory. Device remains in read
mode until command register contents are altered.
Reset/Read
Device automatically powers up in read/reset state. This feature allows only reads, therefore
ensuring no spurious memory content alterations during power up.
AS29LV800 provides manufacturer and device codes in two ways. External PROM programmers
typically access the device codes by driving +10V on A9. AS29LV800 also contains an ID Read
command to read the device code with only +3V, since multiplexing +10V on address lines is
generally undesirable.
Initiate device ID read by writing the ID Read command sequence into the command register.
Follow with a read sequence from address XXX00h to return MFR code. Follow ID Read command
sequence with a read sequence from address XXX01h to return device code.
ID Read
To verify write protect status on sectors, read address XXX02h. Sector addresses A18–A12 produce
a 1 on DQ0 for protected sector and a 0 for unprotected sector.
Exit from ID read mode with Read/Reset command sequence.
Holding RESET low for 500 ns resets the device, terminating any operation in progress; data
handled in the operation is corrupted. The internal state machine resets 20 µs after RESET is driven
low. RY/BY remains low until internal state machine resets. After RESET is set high, there is a delay
of 50 ns for the device to permit read operations.
Hardware Reset
Programming the AS29LV800 is a four bus cycle operation performed on a byte-by-byte or word-
by-word basis. Two unlock write cycles precede the Program Setup command and program data
write cycle. Upon execution of the program command, no additional CPU controls or timings are
necessary. Addresses are latched on the falling edge of CE or WE, whichever is last; data is latched
on the rising edge of CE or WE, whichever is first. The AS29LV800’s automated on-chip program
algorithm provides adequate internally-generated programming pulses and verifies the
programmed cell margin.
Check programming status by sampling data on the RY/BY pin, or either the DATA polling (DQ7)
or toggle bit (DQ6) at the program address location. The programming operation is complete if
DQ7 returns equivalent data, if DQ6 = no toggle, or if RY/BY pin = high.
Byte/word
Programming
The AS29LV800 ignores commands written during programming. A hardware reset occurring
during programming may corrupt the data at the programmed location.
AS29LV800 allows programming in any sequence, across any sector boundary. Changing data from
0 to 1 requires an erase operation. Attempting to program data 0 to 1 results in either DQ5 = 1
(exceeded programming time limits); reading this data after a read/reset operation returns a 0.
When programming time limit is exceeded, DQ5 reads high, and DQ6 continues to toggle. In this
state, a Reset command returns the device to read mode.
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Item
Description
The unlock bypass feature increases the speed at which the system programs bytes or words to the
device because it bypasses the first two unlock cycles of the standard program command sequence.
To initiate the unlock bypass command sequence, two unlock cycles must be written, then
followed by a third cycle which has the unlock bypass command, 20h.
The device then begins the unlock bypass mode. In order to program in this mode, a two cycle
unlock bypass program sequence is required. The first cycle has the unlock bypass program
command, A0h. It is followed by a second cycle which has the program address and data. To
program additional data, the same sequence must be followed.
Unlock Bypass
Command Sequence
The unlock bypass mode has two valid commands, the Unlock Bypass Program command and the
Unlock Bypass Reset command. The only way the system can exit the unlock bypass mode is by
issuing the unlock bypass reset command sequence. This sequence involves two cycles. The first
cycle contains the data, 90h. The second cycle contains the data 00h. Addresses are don’t care for
both cycles. The device then returns to reading array data.
Chip erase requires six bus cycles: two unlock write cycles; a setup command, two additional
unlock write cycles; and finally the Chip Erase command.
Chip erase does not require logical 0s to be written prior to erasure. When the automated on-chip
erase algorithm is invoked with the Chip Erase command sequence, AS29LV800 automatically
programs and verifies the entire memory array for an all-zero pattern prior to erase. The 29LV800
returns to read mode upon completion of chip erase unless DQ5 is set high as a result of exceeding
time limit.
Chip Erase
Sector erase requires six bus cycles: two unlock write cycles, a setup command, two additional
unlock write cycles, and finally the Sector Erase command. Identify the sector to be erased by
addressing any location in the sector. The address is latched on the falling edge of WE; the
command, 30h is latched on the rising edge of WE. The sector erase operation begins after a sector
erase time-out.
To erase multiple sectors, write the Sector Erase command to each of the addresses of sectors to
erase after following the six bus cycle operation above. Timing between writes of additional sectors
must be less than the erase time-out period, or the AS29LV800 ignores the command and erasure
begins. During the time-out period any falling edge of WE resets the time-out. Any command
(other than Sector Erase or Erase Suspend) during time-out period resets the AS29LV800 to read
mode, and the device ignores the sector erase command string. Erase such ignored sectors by
restarting the Sector Erase command on the ignored sectors.
Sector Erase
The entire array need not be written with 0s prior to erasure. AS29LV800 writes 0s to the entire
sector prior to electrical erase; writing of 0s affects only selected sectors, leaving non-selected
sectors unaffected. AS29LV800 requires no CPU control or timing signals during sector erase
operations.
Automatic sector erase begins after sector erase time-out from the last rising edge of WE from the
sector erase command stream and ends when the DATA polling (DQ7) is logical 1. DATA polling
address must be performed on addresses that fall within the sectors being erased. AS29LV800
returns to read mode after sector erase unless DQ5 is set high by exceeding the time limit.
3/22/01; V.1.0
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AS29LV800
®
Item
Description
Erase Suspend allows interruption of sector erase operations to read data from or program data to a
sector not being erased. Erase suspend applies only during sector erase operations, including the
time-out period. Writing an Erase Suspend command during sector erase time-out results in
immediate termination of the time-out period and suspension of erase operation.
AS29LV800 ignores any commands during erase suspend other than Read/Reset, Program or Erase
Resume commands. Writing the Erase Resume Command continues erase operations. Addresses are
Don’t Care when writing Erase Suspend or Erase Resume commands.
AS29LV800 takes 0.2–15 µs to suspend erase operations after receiving Erase Suspend command.
To determine completion of erase suspend, either check DQ6 after selecting an address of a sector
not being erased, or poll RY/BY. Check DQ2 in conjunction with DQ6 to determine if a sector is
being erased. AS29LV800 ignores redundant writes of Erase Suspend.
Erase Suspend
While in erase-suspend mode, AS29LV800 allows reading data (erase-suspend-read mode) from or
programming data (erase-suspend-program mode) to any sector not undergoing sector erase;
these operations are treated as standard read or standard programming mode. AS29LV800 defaults
to erase-suspend-read mode while an erase operation has been suspended.
Write the Resume command 30h to continue operation of sector erase. AS29LV800 ignores
redundant writes of the Resume command. AS29LV800 permits multiple suspend/resume
operations during sector erase.
When attempting to write to a protected sector, DATA polling and Toggle Bit 1 (DQ6) are activated
for about <1 µs. When attempting to erase a protected sector, DATA polling and
Toggle Bit 1 (DQ6) are activated for about <5 µs. In both cases, the device returns to read mode
without altering the specified sectors.
Sector Protect
Ready/Busy
RY/BY indicates whether an automated on-chip algorithm is in progress (RY/BY = low) or
completed (RY/BY = high). The device does not accept Program/Erase commands when
RY/BY = low. RY/BY= high when device is in erase suspend mode. RY/BY = high when device
exceeds time limit, indicating that a program or erase operation has failed. RY/BY is an open drain
output, enabling multiple RY/BY pins to be tied in parallel with a pull up resistor to VCC.
3/22/01; V.1.0
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AS29LV800
March 2001
®
Status operations
Only active during automated on-chip algorithms or sector erase time outs. DQ7 reflects
complement of data last written when read during the automated on-chip program algorithm (0
during erase algorithm); reflects true data when read after completion of an automated on-chip
program algorithm (1 after completion of erase agorithm).
DATA polling (DQ7)
Active during automated on-chip algorithms or sector erase time outs. DQ6 toggles when CE or OE
toggles, or an Erase Resume command is invoked. DQ6 is valid after the rising edge of the fourth
pulse of WE during programming; after the rising edge of the sixth WE pulse during chip erase;
after the last rising edge of the sector erase WE pulse for sector erase. For protected sectors,
DQ6 toggles for <1 µs during program mode writes, and <5 µs during erase (if all selected sectors
are protected).
Toggle bit 1 (DQ6)
Indicates unsuccessful completion of program/erase operation (DQ5 = 1). DATA polling remains
active. If DQ5 = 1 during chip erase, all or some sectors are defective; during byte programming or
sector erase, the sector is defective (in this case, reset the device and execute a program or erase
command sequence to continue working with functional sectors). Attempting to program 0 to 1
will set DQ5 = 1.
Exceeding time limit
(DQ5)
Checks whether sector erase timer window is open. If DQ3 = 1, erase is in progress; no commands
will be accepted. If DQ3 = 0, the device will accept sector erase commands. Check DQ3 before and
after each Sector Erase command to verify that the command was accepted.
Sector erase timer
(DQ3)
During sector erase, DQ2 toggles with OE or CE only during an attempt to read a sector being
erased. During chip erase, DQ2 toggles with OE or CE for all addresses. If DQ5 = 1, DQ2 toggles
only at sector addresses where failure occurred, and will not toggle at other sector addresses. Use
DQ2 in conjunction with DQ6 to determine whether device is in auto erase or erase suspend
mode.
Toggle bit 2 (DQ2)
Write operation status
Status
DQ7
DQ7
0
DQ6
DQ5
DQ3
N/A
1
DQ2
RY/BY
Auto programming
Toggle
Toggle
No toggle
Data
0
No toggle
Toggle†
Toggle
0
0
1
1
0
1
1
Standard mode
Program/erase in auto erase
Read erasing sector
0
1
0
N/A
Data
N/A
N/A
N/A
Erase suspend mode
Read non-erasing sector
Program in erase suspend
Auto programming (byte)
Program/erase in auto erase
Data
DQ7
DQ7
0
Data
0
Data
Toggle
Toggle
Toggle
Toggle†
No toggle
Toggle†
1
1
Exceeded time limits
Program in erase suspend
DQ7
Toggle
1
N/A
No toggle
1
(non-erase suspended sector)
DQ2 toggles when an erase-suspended sector is read repeatedly.
DQ6 toggles when any address is read repeatedly.
DQ2 = 1 if byte address being programmed is read during erase-suspend program mode.
†
DQ2 toggles when the read address applied points to a sector which is undergoing erase, suspended erase, or a failure to erase.
3/22/01; V.1.0
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AS29LV800
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Automated on-chip programming algorithm
Automated on-chip erase algorithm
START
START
Write erase command sequence
(see below)
Write program command sequence
(see below)
DATA polling or toggle bit
successfully completed
DATA polling or toggle bit
successfully completed
Erase complete
Individual sector/multiple sector
Increment
address
erase command sequence
Chip erase command sequence
×16 mode (address/data):
×16 mode (address/data):
Last
NO
address?
555h/AAh
2AAh/55h
555h/80h
555h/AAh
2AAh/55h
555h/10h
555h/AAh
2AAh/55h
YES
Programming completed
555h/80h
Program command sequence
×16 mode (address/data):
555h/AAh
555h/AAh
2AAh/55h
2AAh/55h
Sector address/30h
Sector address/30h
555h/A0h
Program address/program data
Sector address/30h
optional sector erase commands
†
The system software should check the status of DQ3 prior to and following each
subsequent sector erase command to ensure command completion. The device may
not have accepted the command if DQ3 is high on second status check.
3/22/01; V.1.0
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®
Programming using unlock bypass command
Unlock bypass command sequence
x16 mode (address/data)
START
555h/AAh
2AAh/55h
555h/20h
Write unlock
bypass command
(3 cycles)
Write unlock
bypass program command
(2 cycles)
Unlock bypass program
command sequence
x16 mode (address/data)
DATA polling or
toggle bit
xxxh/A0h
successfully completed
program address/
program data
Increment
address
Last
NO
address?
Unlock bypass reset
command sequence
x16 mode (address/data)
YES
xxxh/90h
xxxh/00h
Write unlock
bypass reset command
(2 cycles)
Programming completed
3/22/01; V.1.0
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®
DATA polling algorithm
Toggle bit algorithm
Read byte (DQ0–DQ7)
Read byte (DQ0–DQ7)
Address = don’t care
Address = VA†
DQ7
=
DQ6
=
YES
NO
DONE
DONE
data
toggle
?
?
NO
YES
DQ5
DQ5
=
NO
NO
=
1
?
1
?
YES
YES
Read byte (DQ0–DQ7)
Address = VA
Read byte (DQ0–DQ7)
Address = don’t care
DQ7
data‡
DQ6
toggle†
YES†
NO
=
=
DONE
DONE
?
?
NO†
FAIL
YES
FAIL
†
‡
VA = Byte address for programming. VA = any of the sector
addresses within the sector being erased during Sector Erase. VA
= valid address equals any non-protected sector group address
during Chip Erase.
†DQ6 rechecked even if DQ5 = 1 because DQ6 may stop toggling
when DQ5 changes to 1.
DQ7 rechecked even if DQ5 = 1 because DQ5 and DQ7 may not
change simultaneously.
3/22/01; V.1.0
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®
Sector protect algorithm
Sector unprotect algorithm
START
START
PLSCNT = 1
PLSCNT = 1
RESET# = V
ID
RESET# = V
ID
Wait 1 µs
Wait 1 µs
No
Protect all sectors:
The shaded portion of
the sector protct
No
First Write
Cycle=60h?
Temporary sector
unprotect mode
First Write
Cycle=60h?
Temporary sector
unprotect mode
algorithm must be
initiated for all
Yes
Yes
Set up sector
unprotected sectors
before calling the
sector unprotect
address
No
All sectors
protected?
Sector protect:
write 60h to sector
address with
Yes
A6=0, A1=1,
A0=0
Sector unprotect:
write 60h to sector
address with
A6=1, A1=1,
A0=0
Wait 150 µs
Verify sector
protect; write 40h
to sector address
with A6=0,
Wait 15 ms
Increment
PLSCNT
Set up first
sector address
A1=1, A0=0
Verify sector
unprotect; write 40h
to sector address
with A6=1,
Read from sector
address with A6=0,
A1=1, A0=0
Increment
PLSCNT
No
A1=1, A0=0
No
Read from sector
address with A6=1,
A1=1, A0=0
Data=01h?
Yes
PLSCNT=25?
No
Set up next
Yes
sector address
No
Protect
another
Yes
PLSCNT
=1000?
Data=00h?
Yes
sector?
Device failed
No
Yes
Remove V
from RESET#
ID
No
Last sector
verified?
Device failed
Write reset
command
Yes
Remove V
ID
Sector protect
complete
from RESET#
Write reset
command
Sector unprotect
complete
3/22/01; V.1.0
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AS29LV800
®
DC electrical characteristics
Parameter
VCC = 2.7–3.6V
Symbol Test conditions
Min
-
Max
Unit
Input load current
ILI
VIN = VSS to VCC, VCC = VCC MAX
VCC = VCC MAX, A9 = 10V
VOUT = VSS to VCC, VCC = VCC MAX
CE = VIL, OE = VIH
1
µA
A9 Input load current
ILIT
ILO
ICC1
ICC2
35
µA
Output leakage current
-
-
-
1
µA
Active current, read @ 5MHz
Active current, program/erase
20
mA
mA
CE = VIL, OE = VIH
100
5
CE = VIL, OE = VIH;
VIL= 0.3V, VIH = VCC - 0.3V
Automatic sleep mode*
ICC3
-
µA
Standby current
ISB
CE = VCC - 0.3V, RESET = VCC - .3V
RESET = 0.3V
-
5
µA
µA
V
Deep power down current3
Input low voltage
IPD
-
5
VIL
-0.5
0.8
Input high voltage
VIH
VOL
VOH
VLKO
VID
0.7×VCC
VCC + 0.3
V
Output low voltage
Output high voltage
Low VCC lock out voltage
Input HV select voltage
IOL = 4.0mA, VCC = VCC MIN
IOH = -2.0 mA, VCC = VCC MIN
-
0.45
V
0.85×VCC
-
V
1.5
9
-
V
11
V
* Automatic sleep mode enables the deep power down mode when addresses are stable for 150 ns. Typical sleep mode current is 200 nA.
3/22/01; V.1.0
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AS29LV800
March 2001
®
AC parameters — read cycle
-70R
-80
-90
-120
JEDEC
Std
Symbol Symbol Parameter
Min
Max
-
Min
Max
-
Min
Max Min Max Unit
tAVAV
tAVQV
tELQV
tGLQV
tRC
tACC
tCE
Read cycle time
70
-
80
-
90
-
-
120
-
ns
ns
ns
ns
ns
ns
ns
Address to output delay
Chip enable to output
70
70
30
-
80
80
30
-
90
90
35
-
-
-
120
120
50
-
-
-
-
tOE
tOES
tDF
Output enable to output
Output enable setup time
Chip enable to output High Z
Output enable to output High Z
-
-
-
-
0
-
0
-
0
-
0
-
tEHQZ
tGHQZ
20
20
20
20
30
30
30
30
tDF
-
-
-
-
Output hold time from addresses,
first occurrence of CE or OE
tAXQX
tOH
0
-
-
-
0
-
-
-
0
-
-
-
0
-
-
-
ns
ns
ns
Output enable hold time: Read
10
10
10
10
10
10
10
10
tOEH
tRH
Output enable hold time:
Toggle and data polling
tPHQV
RESET high to output delay
-
-
50
10
-
-
-
50
10
-
-
-
50
10
-
-
-
50
10
-
ns
µs
ns
tREADY RESET pin low to read mode
tRP RESET pulse
500
500
500
500
Read waveform
t
RC
Addresses stable
Addresses
CE
t
ACC
t
DF
t
t
OES
OE
OE
t
OEH
WE
t
t
OH
CE
High Z
High Z
Outputs
Output valid
t
RH
RESET
3/22/01; V.1.0
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AS29LV800
®
AC parameters — write cycle
WE controlled
-70R
-80
-90
-120
JEDEC
Std
Symbol
Symbol Parameter
Min
70
0
Max
Min
80
0
Max
Min
90
0
Max
Min
120
0
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tAVAV
tWC
tAS
Write cycle time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
tAVWL
tWLAX
tDVWH
tWHDX
tGHWL
tELWL
Address setup time
Address hold time
Data setup time
tAH
45
35
0
45
35
0
45
45
0
50
50
0
tDS
tDH
tGHWL
tCS
Data hold time
Read recover time before write
CE setup time
0
0
0
0
0
0
0
0
tWHEH
tWLWH
tWHWL
tCH
CE hold time
0
0
0
0
tWP
tWPH
Write pulse width
Write pulse width high
35
30
35
30
35
30
50
30
Write waveform
WE controlled
3rd bus cycle
DATA polling
tWC
tAS
555h
Program address
Program address
Addresses
CE
tAH
t
CH
t
; t
GHWL OES
OE
t
WP
tWHWH1 or 2
WE
t
t
CS
WPH
t
DH
Program
data
A0h
DQ7
D
OUT
DATA
t
DS
3/22/01; V.1.0
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AC parameters — write cycle 2
CE controlled
-70R
-80
-90
-120
JEDEC
Std
Symbol Symbol Parameter
Min
70
0
Max
Min
Max
Min
90
0
Max
Min
120
0
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tAVAV
tAVEL
tWC
tAS
tAH
tDS
Write cycle time
Address setup time
Address hold time
Data setup time
-
-
-
-
-
-
-
-
-
-
80
0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
tELAX
tDVEH
tEHDX
tGHEL
tWLEL
tEHWH
tELEH
tEHEL
45
35
0
45
35
0
45
45
0
50
50
0
tDH
tGHEL
tWS
tWH
tCP
Data hold time
Read recover time before write
WE setup time
0
0
0
0
0
0
0
0
WE hold time
0
0
0
0
CE pulse width
35
30
35
30
35
30
50
30
tCPH
CE pulse width high
Write waveform 2
CE controlled
DATA polling
Addresses
WE
555h
Program address
Program address
t
AH
t
t
AS
WC
t
, t
GHEL OES
OE
t
CP
t
WHWH1 or 2
CE
t
CPH
t
DH
Program
data
DATA
A0h
DQ7
D
OUT
t
DS
3/22/01; V.1.0
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AS29LV800
®
AC parameters — temporary sector unprotect
-70R/80/90/120
JEDEC
Symbol
Std Symbol
tVIDR
Parameter
rise and fall time
Min
Max
-
Unit
ns
V
500
ID
RESET setup time for temporary sector
unprotect
tRSP
4
-
µs
Temporary sector unprotect waveform
10V
RESET
0 or 3V
tVIDR
0 or 3V
tVIDR
Program/erase command sequence
CE
WE
tRSP
RY/BY
AC parameters — RESET
-70R/80/90/120
JEDEC
Symbol
Std Symbol
tRP
Parameter
Min
Max
-
Unit
ns
RESET pulse
500
tRH
-
-
50
10
ns
RESET High time before Read
RESET Low to Read mode
tREADY
µs
RESET waveform
tRP
tRP
RESET
tREADY
RY/BY
tRH
status
status
valid data
valid data
DQ
Erase waveform
×16 mode
tWC
tAS
Addresses
CE
555h
2AAh
555h
tAH
555h
2AAh
Sector address
t
GHWL
OE
t
t
WC
WP
WE
t
WPH
t
CS
10h for Chip Erase
30h
t
DH
AAh
55h
80h
AAh
55h
Data
t
DS
3/22/01; V.1.0
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®
AC Parameters — READY/BUSY
-70R/80/90/120
JEDEC
Symbol Std Symbol
Parameter
setup time
Min
50
0
Max
Unit
µs
-
-
-
tVCS
tRB
-
-
-
V
CC
ns
Recovery time from RY/BY
ns
tBUSY
90
Program/erase valid to RY/BY delay
RY/BY waveform
CE
Rising edge of last WE signal
WE
Program/erase
operation
tRB
RY/BY
tri-stated open-drain
tBUSY
V
CC
tVCS
DATA polling waveform
tCH
CE
tDF
tOE
OE
tOEH
WE
tCE
tOH
High Z
DQ7
Input DQ7
Output DQ7
Output
tWHWH1 or 2
Toggle bit waveform
CE
tOEH
WE
OE
DQ6
tOE
toggle
toggle
no toggle
tDH
3/22/01; V.1.0
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AS29LV800
®
Word/byte configuration
-70R/80/90/120
JEDEC
Symbol Std Symbol
Parameter
Min
Max
10
30
-
Unit
ns
-
-
-
tELFL/tELFH
tFLQZ
-
-
CE to BYTE switching Low or High
BYTE switching Low to output High-Z
BYTE switching High to output Active
ns
ns
tFHQZ
80
BYTE read waveform
CE
OE
BYTE
Word
tELFL
DQ0-DQ14
Data output
DQ0-DQ7
Data output
DQ0-DQ14
DQ15/A-1
BYTE
to
Byte
DQ15 output
tFLQZ
Address input
tELFH
Byte
to
Word
DQ0-DQ14
Data output
DQ0-DQ7
Data output
DQ0-DQ14
DQ15/A-1
Address input
tFHQV
DQ15 output
BYTE write waveform
CE
falling edge of last WE signal
WE
BYTE
tSET
See Erase/Program operations table for tAS and tAH specifications.
(tAS
)
tHOLD (tAH)
Sector protect/unprotect
VID
VIH
RESET#
SA, A6,
A1, A0
Don’t care
Valid*
60h
Don’t care
Don’t care
Valid*
Don’t care
Don’t care
Valid*
Status
Sector protect/unprotect
Verify
40h
60h
DATA
Sector protect: 100 µs
Sector unprotect: 10 ms
1 µs
CE#
WE#
3/22/01; V.1.0
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AS29LV800
March 2001
®
AC test conditions
+3.0V
1N3064
or equivalent
2.7KΩ
Device under test
6.2KΩ
CL*
1N3064
or equivalent
VSS
VSS
VSS
Test specifications
Test Condition
-70R,-80
-90, -120
1 TTL gate
100
Unit
Output Load
Output Load Capacitance CL (including jig capacitance)
Input Rise and Fall Times
30
pF
ns
V
5
Input Pulse Levels
0.0-3.0
1.5
Input timing measurement reference levels
Output timing measurement reference levels
V
1.5
V
Erase and programming performance
Limits
Parameter
Min
Typical
Max
15
Unit
sec
Sector erase and verify-1 time (excludes 00h programming
prior to erase)
-
1.0
Byte
-
-
-
-
10
15
300
360
27
-
µs
µs
Programming time
Word
Chip programming time
Erase/program cycles*
7.2
sec
100,000
cycles
* Erase/program cycle test is not verified on each shipped unit.
Latchup tolerance
Parameter
Min
-1.0
-0.5
-100
Max
+12.0
Unit
V
Input voltage with respect to VSS on A9, OE, and RESET pin
Input voltage with respect to VSS on all DQ, address, and control pins
VCC+0.5
+100
V
Current
mA
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
3/22/01; V.1.0
Alliance Semiconductor
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March 2001
AS29LV800
®
Recommended operating conditions
Parameter
Comments
Symbol
Vcc
Min
+2.7
+3.0
0
Max
Unit
V
For full voltage range
For regulated voltage range
+3.6
+3.6
0
Supply voltage
Vcc
VSS
VIH
VIL
V
V
1.9
VCC + 0.3
0.8
V
Input voltage
–0.5
V
Absolute maximum ratings
Parameter
Symbol
Min
–0.5
–0.5
-0.5
–55
–65
-
Max
Unit
Input voltage (Input or DQ pin)
Input voltage (A9 pin, OE, RESET)
Power supply voltage
VIN
VCC+ 0.5
V
VIN
+12.5
+4.0
+125
+150
150
V
VCC
TOPR
TSTG
IOUT
V
Operating temperature
°C
°C
mA
Storage temperature (plastic)
Short circuit output current
Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute max-
imum rating conditions for extended periods may affect reliability.
TSOP pin capacitance
Symbol
Parameter
Test setup
VIN = 0
Typ
6
Max
7.5
12
Unit
pF
CIN
Input capacitance
Output capacitance
Control pin capacitance
COUT
CIN2
VOUT = 0
VIN = 0
8.5
8
pF
10
pF
SO pin capacitance
Symbol
Parameter
Test setup
VIN = 0
Typ
6
Max
7.5
12
Unit
pF
CIN
Input capacitance
Output capacitance
Control pin capacitance
COUT
CIN2
VOUT = 0
VIN = 0
8.5
8
pF
10
pF
Data retention
Parameter
Temp.(°C)
Min
10
Unit
150°
125°
years
years
Minimum pattern data retention time
20
3/22/01; V.1.0
Alliance Semiconductor
P. 23 of 25
March 2001
AS29LV800
®
Thin small outline package (TSOP-I)
e
b
Package dimensions
48-pin
12×20
Min
Max
1.27
0.15
1.05
0.27
c
A
A1
A2
b
–
A2
A
A1
0.05
0.95
0.17
L
pin 1
pin 48
D
Hd
c
0.15 nominal
D
18.20
18.60
e
0.50 nominal
E
11.90
19.80
0.50
0°
12.10
20.20
0.70
5°
Hd
L
pin 24
pin 25
48-pin
α
α
E
Small Outline Plastic (SO)
Package dimensions
c
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
JEDEC MO - 175 AA
44-pin SO
Min (mm) Max (mm)
H
e
SO
e
A
A1
A2
b
–
3.1
–
0.05
2.5
2.9
0.45
0–10°
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22
0.25
c
0.09
28.0
12.4
0.25
28.4
12.8
d
d
e
A2
l
A
E
1.27 (typical)
16.05 (typical)
0.73 1.3
He
l
A1
b
E
3/22/01; V.1.0
Alliance Semiconductor
P. 24 of 25
AS29LV800
March 2001
®
AS29LV800 ordering codes
70 ns (commercial/
industrial)
80 ns (commercial/
industrial)
90 ns (commercial/ 120 ns (commercial/
Package \ Access Time
industrial)
industrial)
TSOP, 12×20 mm, 48-pin
Top boot configuration
AS29LV800T-70RTC
AS29LV800T-70RTI
AS29LV800T-80TC
AS29LV800T-80TI
AS29LV800T-90TC
AS29LV800T-90TI
AS29LV800T-120TC
AS29LV800T-120TI
TSOP, 12×20 mm, 48-pin
Bottom boot configuration
AS29LV800B-70RTC
AS29LV800B-70RTI
AS29LV800B-80TC
AS29LV800B-80TI
AS29LV800B-90TC
AS29LV800B-90TI
AS29LV800B-120TC
AS29LV800B-120TI
SO, 13.3 mm, 44-pin*
Top boot configuration
AS29LV800T-70RSC
AS29LV800T-70RSI
AS29LV800T-80SC
AS29LV800T-80SI
AS29LV800T-90SC
AS29LV800T-90SI
AS29LV800T-120SC
AS29LV800T-120SI
SO, 13.3 mm, 44-pin
Bottom boot configuration
AS29LV800B-70RSC
AS29LV800B-70RSI
AS29LV800B-80SC
AS29LV800B-80SI
AS29LV800B-90SC
AS29LV800B-90SI
AS29LV800B-120SC
AS29LV800B-120SI
* Shaded area indicates advanced information. Availability of SO package is TBD.
AS29LV800 part numbering system
AS29LV
800
X
–XXX
X
X
X
Options:
B = Burn-in
H = High ISB (<1mA)
Blank= Standard
Package:
S = SO
3V Flash
EEPROM
prefix
Address
access
time*
Temperature range:
C = Commercial: 0°C to 70°C
I = Industrial: -40°C to 85°C
Device T= Top boot configuration
number B= Bottom boot configuration
T = TSOP
* Sufffix “R” denotes regulated voltage range.
3/22/01; V.1.0
Alliance Semiconductor
P. 25 of 25
© Copyright Alliance Semiconductor Corporation. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered trademarks of Alliance. All other brand and product names may
be the trademarks of their respective companies. Alliance reserves the right to make changes to this document and its products at any time without notice. Alliance assumes no responsibility for any errors that
may appear in this document. The data contained herein represents Alliance’s best data and/or estimates at the time of issuance. Alliance reserves the right to change or correct this data at any time, without
notice. If the product described herein is under development, significant changes to these specifications are possible. The information in this product data sheet is intended to be general descriptive information
for potential customers and users, and is not intended to operate as, or provide, any guarantee or warrantee to any user or customer. Alliance does not assume any responsibility or liability arising out of the appli-
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