AWT6223RM26P8 [ANADIGICS]
WCDMA/GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control; WCDMA / GSM / GPRS /极性EDGE功率放大器模块集成功率控制
| 型号： | AWT6223RM26P8 |
| 厂家： | 
ANADIGICS, INC |
| 描述： | WCDMA/GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control |
| 文件： | 总16页 (文件大小：563K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢁWt6223ꢃ
WCDMꢁ/GsM/GPꢃs/Polar ꢀDGꢀ
Power Amplifier Module
with Integrated Power Control
Daꢄa sheeꢄ - ꢃꢀv 2.0
Fꢀꢁtꢂꢃꢀs
•ꢀ InGaP HBT Technology
•ꢀ Optimized for a 50 System
•ꢀ Internal Reference Voltage
•ꢀ Integrated GSM/EDGE Power Control with Tem-
perature Compensation
•ꢀ Low Profile Surface Mount Package:
6 mm x 8 mm x 1 mm
•ꢀ RoHS Compliant Package, 250 oC MSL-3
WCDMꢁ MODꢀ
•ꢀ HSDPA Compliant
•ꢀ High Efficiency:
41% @ POUT = +28.5 dBm
21% @ POUT = +16 dBm
•ꢀ Low Quiescent Current: 12 mA
InGaP HBT MMIC technology to provide reliability,
temperature stability, and ruggedness. This penta-
band module consists of three amplifier chains; one
to support GSM/GPRS/EGPRS in cellular bands, one
to support GSM/GPRS/EGPRS in DCS/PCS bands,
and one to support WCDMA in the IMT band. In ad-
dition, the AWT6223R module includes an internal
reference voltage and integrated power control with
temperature compensation for use in GMSK and
8-PSK modes of operation. These features facilitate
fast and easy production calibration, minimize per-
formance variation over temperature, and reduce the
number of external components required.
•
•
Low Leakage Current in Shutdown Mode: <1 A
Internal Voltage Regulator Eliminates the Need for
External Reference Voltage
The WCDMA PA incorporates ANADIGICS’ HELP2TM
technology. Through selectable bias modes, the
AWT6223R achieves optimal efficiency across
different output power levels, specifically at low
and mid-range power levels where the PA typically
operates, thereby dramatically increasing handset
talk-time and standby-time. Its built-in voltage regulator
eliminates the need for an external reference voltage
and switch components, reducing PCB area and BOM
costs. All of the RF ports for this device are internally
matched to 50 . The RF inputs GSM_IN and DCS/
PCS_IN both have shunt resistors to ground to main-
tain a good input VSWR as the VRAMP power control
voltage is varied. Internal DC blocks are provided at
the RF outputs.
•ꢀ VEN = +2.4 V (+2.2 V min over Temp)
GMsK MODꢀ
•ꢀ +35 dBm GSM850/900 Output Power
•
+33 dBm DCS/PCS Output Power
•ꢀ 55 % GSM850/900 PAE
•ꢀ 50 % DCS/PCS PAE
•ꢀ Power Control Range > 50 dB
•ꢀ EGPRS Capable (class 12)
ꢀDGꢀ MODꢀ
•
•
+29 dBm GSM850/900 Output Power
+28.5 dBm DCS/PCS Output Power
•ꢀ 27 % GSM850/900 PAE
•ꢀ 30 % DCS/PCS PAE
•ꢀ -63 dBc/30 kHz Typical ACPR (400 kHz)
CEXT2
•ꢀ -77 dBc/30 kHz Typical ACPR (600 kHz)
22
VCC_WCDMA
1
2
21
20
19
18
17
WCDMA_IN
ꢁPPLICꢁtIONs
VMODE
WCDMA_OUT
GND
•
3G Handsets, Smartphones, Data Devices Incor-
porating:
Voltage Regulator
and Bias Control
VEN
DCS/PCS_IN
BS
3
DCS/PCS_OUT
4
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
• WCDMA (IMT)
•ꢀGSM850/GSM900/DCS/PCS Bands
• GMSK and 8-PSK (Open Loop Polar)
Modulations
5
GND
6
GND
TX_EN
VBATT
16
15
CMOS Bias/Power
Controller
7
CEXT3
8
CEXT1
GND
14
13
12
PꢃODꢂCt DꢀsCꢃIPtION
9
VRAMP
GND
The AWT6223R WEDGE module supports dual, tri,
or quad band operation using GMSK/GPRS and
8-PSK (open loop polar) modulations, and WCDMA
operation in the IMT band. The AWT6223R mod-
ule is manufactured using ANADIGICS’ advanced
GSM850/900_IN
GSM850/900_OUT
10
11
VCC_GSM
Figure 1: Block Diagram
11/2008
ꢁWt6223ꢃ
CEXT2
VCC_WCDMA
1
2
22
21
20
19
18
17
WCDMA_IN
VMODE
WCDMA_OUT
GND
3
VEN
DCS/PCS_IN
BS
DCS/PCS_OUT
4
5
GND
GND
6
GND
TX_EN
VBATT
16
15
7
CEXT3
8
GND
CEXT1
14
13
12
9
VRAMP
GND
GSM850/900_IN
GSM850/900_OUT
10
11
VCC_GSM
Figure 2: Pinouꢄ (X - ray top view)
table 1: Pin Deꢅcripꢄion
PIN
NꢁMꢀ
WCDMA_IN
DꢀsCꢃIPtION
PIN
NꢁMꢀ
DꢀsCꢃIPtION
1
2
3
4
WCDMA RF Input
12 GSM850/900_OUT GSM850/900 RF Output
WCDMA Mode Control
Voltage
V
MODE
13
14
15
GND
GND
Ground
Ground
V
EN
WCDMA Shutdown
Bypass for Power Control
Regulator
DCS/PCS_IN
DCS/PCS RF Input
C
EXT3
5
6
7
BS
Band Select Logic Input
TX Enable Logic Input
Battery Supply
16
17
18
GND
GND
Ground
Ground
T
X
_EN
V
BATT
DCS/PCS_OUT DCS/PCS RF Output
Bypass for Internal
Voltage Regulator
8
9
C
EXT1
19
GND
Ground
Analog signal used to
control the GSM output
power
V
RAMP
20
21
22
WCDMA_OUT
WCDMA RF Output
10 GSM850/900_IN GSM850/900 RF Input
CC test point for GSM
V
CC_WCDMA
WCDMA Supply Voltage
Bypass for WCDMA VCC1
V
11
V
CC_GSM
secton. Do not connect.
Do not ground.
C
EXT2
Data Sheet - Rev 2.0
2
11/2008
ꢁWt6223ꢃ
ꢀLꢀCtꢃICꢁL CHꢁꢃꢁCtꢀꢃIstICs
table 2: ꢁbꢅoluꢄe Maximum ꢃaꢄingꢅ
PꢁꢃꢁMꢀtꢀꢃ
MIN
MꢁX
ꢂNIts
Supply Voltage (VBATT
)
-
-
+6
+5
V
V
Supply Voltage (VCC_WCDMA
)
RF Input Power (RFIN
GSM/EDGE Output Control Voltage (VRAMP
WCDMA Control Voltages (VMODE, VEN
Storage Temperature (TSTG
)
-
10
dBm
V
)
-0.3
0
1.8
3.5
150
)
V
)
-55
°C
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure
to absolute ratings for extended periods of time may adversely affect
reliabiliꢄy.
CEXT2
>+2500 V <-2500 V
WCDMA_IN
>+1500 V <-1500 V
VCC_WCDMA
>+1300 V <-1300 V
1
2
22
21
20
19
18
17
VMODE
>+1500 V <-1500 V
WCDMA_OUT
>+1500 V <-1500 V
VEN
3
GND
>+1500 V <-1500 V
DCS/PCS_IN
>+2500 V <-2500 V
DCS/PCS_OUT
>+2500 V <-2500 V
4
BS
5
GND
GND
>+2500 V <-2500 V
GND
TX_EN
>+2500 V <-2500 V
VBATT
>+2500 V <-2500 V
6
16
15
CEXT3
>+2500 V <-2500 V
7
CEXT1
>+2500 V <-2500 V
8
GND
14
13
12
VRAMP
>+2500 V <-2500 V
9
GND
GSM850/900_IN
>+2500 V <-2500 V
GSM850/900_OUT
>+2500 V <-2500 V
10
11
VCC_GSM
>+2500 V <-2500 V
Figure 3: ꢀsD Pin ꢃaꢄing
Electrostatic Discharge Sensitivity
The AWT6223R part was tested to determine the •ꢀ Rating for WCDMA_IN, VMODE, VEN, and
ESD sensitivity of each package pin with respect
WCDMA_OUT is +1500V and -1500V;
to Ground. Non-ground pins are stressed with 1 •ꢀ Rating for VCC_WCDMA is +1300V and -1300V;
positive pulse or 1 negative pulse with respect to •ꢀ Rating for DCS/PCS_IN, BS, Tx_EN, VBATT,
the Ground using the Human Body Model appara-
tus and waveform outlined in JESD22-A114C.01.
Determination of pass or fail is made according to
whether the part passes key RF tests against the
datasheet limits after stress. Results of the test are
presented in Figure 3:
CEXT1, VRAMP, GSM_IN, VCC_GSM, GSM_OUT,
CEXT3 and DCS/PCS_OUT is +2500V and
-2500V
It is very important to take all necessary precautions,
listed in Application Notes “ESD precautions for
ANADIGICS GaAs MMIC,” to avoid ESD damage to
Data Sheet - Rev 2.0
11/2008
3
ꢁWt6223ꢃ
Table 3: GSM/EDGE Operating Conditions
PꢁꢃꢁMꢀtꢀꢃ
MIN tYP MꢁX ꢂNIts
COMMꢀNts
Case temperature (T
C
)
-20
3.0
-
85
°C
V
Supply voltage (VBATT
)
3.5
4.8
V
V
BATT = VCC_WCDMA = 4.8 V, VEN = 0 V,
MODE = 0 V, BS = 0 V, VRAMP = 0 V,
Total Power Supply Leakage
Current
A
-
1
10
TX_EN = LOW, No RF applied
Control Voltage Range
0.2
-
-
1.6
V
V
P
RAMP = 0.2 V, TX_EN = LOW YHIGH
IN = 5 dBm
s
Turn On Time (TON
)
-
1
V
P
RAMP = 0.2 V, TX_EN = LOW YHIGH
IN = 5 dBm
s
Turn Off Time (TOFF
)
-
-
1
s
s
Rise Time (TRISE
Fall Time (TFALL
)
-
-
-
-
-
-
-
1
1
P
OUT = -10 dBm YPMAX (within 0.2 dB)
)
POUT = PMAX Y-10 dBm (within 0.2 dB)
V
V
RAMP Input Capacitance
RAMP Input Current
3
-
-
pF
A
10
50
Duty Cycle
-
%
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
Notes:
1. Do not apply a DC voltage to the GSM_IN or DCS/PCS_IN RF inputs.
table 4: GsM/ꢀDGꢀ Digiꢄal Inpuꢄꢅ
PꢁꢃꢁMꢀtꢀꢃ
sYMBOL
MIN tYP MꢁX ꢂNIts
Logic High Voltage
Logic Low Voltage
Logic High Current
Logic Low Current
V
IH
1.2
-
-
-
-
3.0
0.5
30
V
V
IL
-
-
-
V
A
A
|IIH
|
|IIL
|
30
table 5: GsM/ꢀDGꢀ Logic Conꢄrol
OPꢀꢃꢁtIONꢁL MODꢀ
Bs
LOW
HIGH
-
tX_ꢀN
GSM850/900
DCS/PCS
PA DISABLED
Notes:
HIGH
HIGH
LOW
1. VBATT must be applied before taking BS and/or TX_EN High.
Data Sheet - Rev 2.0
4
11/2008
ꢁWt6223ꢃ
Table 6: Electrical Characteristics for GSM850 GMSK Mode
(Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH, VꢀN = LOW)
PꢁꢃꢁMꢀtꢀꢃ
MIN
824
0
tYP
-
MꢁX
849
5
ꢂNIt
MHz
dBm
dBm
COMMꢀNts
Operating Frequency
Input Power
(Fo)
3
Output Power, PMAX
34.5
35
-
Freq = 824 to 849 MHz
V
P
BATT = 3.0 V, T
IN = 0 dBm
C
= 85 °C
Degraded Output Power
32.0
32.5
-
dBm
PAE @ PMAX
48
-
52
-42
-25
-
%
Freq = 824 to 849 MHz
Forward Isolation 1
Forward Isolation 2
Cross Isolation
-30
-20
dBm
dBm
TX
_EN = LOW, PIN = 5 dBm
-
TX
_EN = HIGH,VRAMP = 0.2V, PIN = 5 dBm
2F
3F
o
@ DCS/PCS port
@ DCS/PCS port
-
-
-36
-25
-20
-20
dBm
V
RAMP =0.2V to VRAMP_MAX
o
Second Harmonic
Third Harmonic
-
-
-20
-10
-10
dBm
dBm
Over all output power levels
Over all output power levels
-30
n x F
o (n > 4),
-
-30
-10
dBm
Over all output power levels
F
o
12.75 GHz
VSWR = 8:1 All Phases , POUT < 34.5 dBm
Stability
-
-
-
-
-36
-30
dBm
dBm
F
F
OUT < 1 GHz
OUT > 1 GHz
No Permanent Degradation,
VSWR 10:1, All Phase Angles
Ruggedness
POUT < 34.5 dBm
F
F
TX = 849 MHz, RBW = 100 kHz
RX = 869 to 894 MHz, POUT < 34.5 dBm
RX Noise Power
Input Return Loss
-
-
-86
-83
dBm
1.5:1 2.5:1 VSWR Over all output power levels
Data Sheet - Rev 2.0
5
11/2008
ꢁWt6223ꢃ
Table 7: Electrical Characteristics for GSM900 GMSK Mode
(Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH, VꢀN = LOW)
PꢁꢃꢁMꢀtꢀꢃ
MIN
880
0
tYP
-
MꢁX
915
5
ꢂNIt
MHz
dBm
dBm
COMMꢀNts
Operating Frequency
Input Power
( Fo )
3
Output Power, PMAX
34.5
35
-
Freq = 880 to 915 MHz
VBATT = 3.0 V, TC = 85 °C
PIN = 0 dBm
Degraded Output Power
32.0
32.5
-
dBm
PAE @ PMAX
50
-
55
-40
-25
-
%
Freq = 880 to 915 MHz
Forward Isolation 1
Forward Isolation 2
Cross Isolation
-30
-20
dBm
dBm
TX_EN = LOW, PIN = 5 dBm
-
TX_EN = HIGH,VRAMP = 0.2V, PIN = 5 dBm
2F
3F
o
@ DCS/PCS port
@ DCS/PCS port
-
-
-34
-22
-20
-17
dBm
VRAMP =0.2V to VRAMP_MAX
o
Second Harmonic
Third Harmonic
-
-
-25
-27
-10
-10
dBm
dBm
Over all output power levels
Over all output power levels
n x F
o (n > 4),
-
-30
-10
dBm
Over all output power levels
F
o
12.75 GHz
VSWR = 8:1 All Phases , POUT < 34.5 dBm
Stability
-
-
-
-
-36
-30
dBm
dBm
FOUT < 1 GHz
FOUT > 1 GHz
No Permanent Degradation,
VSWR 10:1, All Phase Angles
Ruggedness
POUT < 34.5 dBm
FTX = 915 MHz, RBW = 100 kHz
FRX = 925 to 935 MHz, POUT < 34.5 dBm
-
-83
-86
-77
dBm
dBm
RX Noise Power
Input Return Loss
FTX = 915 MHz, RBW = 100 kHz
FRX = 935 to 960 MHz, POUT < 34.5 dBm
-
-
-83
1.5:1 2.5:1 VSWR Over all output power levels
Data Sheet - Rev 2.0
6
11/2008
ꢁWt6223ꢃ
Table 8: Electrical Characteristics for GSM850 8PSK Mode
(Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%
ZIN = ZOUT = 50 Ω, TC = 25 °C, BS = LOW, TX_EN = HIGH, VꢀN = LOW)
PꢁꢃꢁMꢀtꢀꢃ
Operating Frequency
Input Power
MIN
tYP
MꢁX
ꢂNIt
MHz
dBm
%
COMMꢀNts
824
880
-
-
849
915
(
FIN )
0
3
5
-
F
P
IN = 824 to 849 MHz
OUT set = +29 dBm
PAE
20
27
ACPR
200 kHz
400 kHz
600 kHz
1800 kHz
-
-
-
-
-39
-63
-74
-77
-34
-58
-64
-68
dBc/30 kHz
dBc/30 kHz All conditions under Polar operation
dBc/30 kHz
dBc/100 kHz
POUT = +29 dBm
All Conditions under Polar operation
OUT = +29 dBm
EVM
-
1
5
%
P
Data Sheet - Rev 2.0
7
11/2008
ꢁWt6223ꢃ
Table 9: Electrical Characteristics for DCS GMSK Mode
(Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH, VꢀN = LOW)
PꢁꢃꢁMꢀtꢀꢃ
MIN
tYP
MꢁX
ꢂNIt
COMMꢀNts
Operating Frequency
Input Power
1710
0
-
1785
MHz
dBm
dBm
3.0
33
5
-
Output Power, PMAX
32
V
P
BATT = 3.0 V, T
IN = 0 dBm
C
= 85 °C
Degraded Output Power
29.5
30.5
-
dBm
PAE @ PMAX
45
-
50
-
%
Freq = 1710 to 1910 MHz
Forward Isolation 1
-40
-33
dBm
T
X
_EN = LOW, PIN = 5dBm
T
P
X
_EN =HIGH, VRAMP = 0.2 V,
Forward Isolation 2
-
-24
-20
dBm
IN = 5 dBm
Second Harmonic
Third Harmonic
-
-
-18
-10
-10
dBm
dBm
Over all output power levels
Over all output power levels
-24
n x F
o (n > 4),
-
-30
-10
dBm
Over all output power levels
F
o
12.75 GHz
VSWR = 8:1 All Phases , POUT < 32 dBm
Stability
-
-
-
-
-36
-30
dBm
dBm
F
F
OUT < 1 GHz
OUT > 1 GHz
No Permanent Degradation,
VSWR 10:1, All Phase Angles
Ruggedness
POUT < 32 dBm
F
F
TX = 1785 MHz, RBW = 100 kHz,
RX =1805 to 1880 MHz, POUT < 32 dBm
RX Noise Power
Input Return Loss
-
-
-86
-80
dBm
1.5:1 2.5:1 VSWR Over all output power levels
Data Sheet - Rev 2.0
8
11/2008
ꢁWt6223ꢃ
Table 10: Electrical Characteristics for PCS GMSK Mode
(Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH, VꢀN = LOW)
PꢁꢃꢁMꢀtꢀꢃ
MIN
tYP
MꢁX
ꢂNIt
COMMꢀNts
Operating Frequency
Input Power
1850
0
-
1910
MHz
dBm
dBm
3.0
33
5
-
Output Power, PMAX
32
V
P
BATT = 3.0 V, T
IN = 0 dBm
C
= 85 °C
Degraded Output Power
29.5
30.5
-
dBm
PAE @ PMAX
45
-
50
-
%
Freq = 1710 to 1910 MHz
Forward Isolation 1
-37
-33
dBm
T
X
_EN = LOW, PIN = 5dBm
T
P
X
_EN =HIGH, VRAMP = 0.2 V,
Forward Isolation 2
-
-22
-18
dBm
IN = 5 dBm
Second Harmonic
Third Harmonic
-
-
-28
-24
-10
-10
dBm
dBm
Over all output power levels
Over all output power levels
n x F
o (n > 4),
-
-30
-10
dBm
Over all output power levels
F
o
12.75 GHz
VSWR = 8:1 All Phases , POUT < 32 dBm
Stability
-
-
-
-
-36
-30
dBm
dBm
F
F
OUT < 1 GHz
OUT > 1 GHz
No Permanent Degradation,
VSWR 10:1, All Phase Angles
Ruggedness
POUT < 32 dBm
F
F
TX = 1910 MHz, RBW = 100 kHz,
RX =1930 to 1990 MHz, POUT < 32 dBm
RX Noise Power
Input Return Loss
-
-
-86
-80
dBm
1.5:1 2.5:1 VSWR Over all output power levels
Data Sheet - Rev 2.0
9
11/2008
ꢁWt6223ꢃ
Table 11: Electrical Characteristics for DCS 8PSK Mode
(Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C , BS =HIGH, TX_EN = HIGH, VꢀN = LOW)
PꢁꢃꢁMꢀtꢀꢃ
Operating Frequency
Input Power
MIN
tYP
-
MꢁX
ꢂNIt
MHz
dBm
%
COMMꢀNts
1710
1850
1785
1910
(
FIN )
0
3
5
-
F
P
IN = 1710 to 1785 MHz
OUT set = +28.5 dBm
PAE
25
30
ACPR
200 kHz
400 kHz
600 kHz
1800 kHz
-
-
-
-
-38
-64
-77
-77
-34
-58
-64
-68
dBc/30 kHz
dBc/30 kHz All conditions under Polar operation
dBc/30 kHz
dBc/100 kHz
POUT = +28.5 dBm
All Conditions under Polar operation
OUT = +28.5 dBm
EVM
-
1
5
%
P
Data Sheet - Rev 2.0
10
11/2008
ꢁWt6223ꢃ
Table 12: WCDMA Operating Conditions
PꢁꢃꢁMꢀtꢀꢃ
Case temperature (T
Supply Voltage (VCC
MIN tYP MꢁX ꢂNIts
COMMꢀNts
C
)
-20
-
85
°C
V
)
+3.2
+3.4
+4.2
P
OUT < +28.5 dBm
+2.2
0
+2.4
-
+3.1
+0.5
PA "on"
PA "shut down"
WCDMA Enable Voltage (VEN
)
V
V
+2.2
0
+2.4
-
+3.1
+0.5
Low Bias Mode
High Bias Mode
Mode Control Voltage (VMODE
RF Output Power (POUT
)
)
3GPP
+28.0 (1) +28.5
+27.0 (1) +27.5
+26.0 (1) +26.5
+25.5 (1) +26.0
-
-
-
-
HSDPA Case A
HSDPA Case B
HSDPA Case C
1/15 < c/d < 12/15
13/15 < c/d < 15/8
15/7 < c/d < 15/0
dBm
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
Notes:
(1) WCDMA operation at VCC = +3.2 V, Po u t is derated by 0.5 dB.
(2) Do not apply a DC voltage to the WCDMA_IN RF input.
table 13: WCDMꢁ Biaꢅ Conꢄrol
P
Oꢂt
ꢁPPLICꢁtION
WCDMA - low power
WCDMA - high power
Shutdown
LꢀvꢀLs
<+16 dBm
>+16 dBm
-
LOGIC
Low
v
ꢀN
v
MODꢀ
+2.4 V +2.4 V
High
+2.4 V
0 V
0 V
Shutdown
0 V
Notes:
1. For WCDMA operation set TX_EN = LOW.
Data Sheet - Rev 2.0
11/2008
11
ꢁWt6223ꢃ
table 14: ꢀlecꢄrical Characꢄeriꢅꢄicꢅ for WCDMꢁ
(Unless Otherwise Specified: TC = 25 °C, VBATT = +3.4 V, TX_EN = LOW, 50 Ω system, VꢀN = 2.4 v)
PꢁꢃꢁMꢀtꢀꢃ
MIN tYP MꢁX
1920 1980
ꢂNIt
COMMꢀNts
Operating Frequency
-
MHz
24.5 26.5 28.5
13.0 15.0 17.0
P
P
OUT = +28.5 dBm, VMODE = 0 V
OUT = +16 dBm, VMODE = +2.4 V
Gain
dB
-
-
-40
-43
-38
-38
P
P
OUT = +28.5 dBm, VMODE = 0 V
OUT = +16 dBm, VMODE = +2.4 V
ACLR1 at 5 MHz offset (1)
ACLR2 at 10 MHz offset
Power-Added Efficiency (1)
dBc
dBc
-
-
-56
-52
-48
-48
P
P
OUT = +28.5 dBm, VMODE = 0 V
OUT = +16 dBm, VMODE = +2.4 V
37
18
41
21
-
-
P
P
OUT = +28.5 dBm, VMODE = 0 V
OUT = +16 dBm, VMODE = +2.4 V
%
Quiescent Current (Icq)
Enable Current
MODE = +2.4 V
-
-
-
-
-
12
0.2
3
20
1
mA
mA
mA
mA
V
through VEN pin
Battery Current
5
through VBATT pin, VMODE = +2.4 V
through VMODE pin, VMODE = +2.4 V
Mode Control Current
Noise in Receive Band
0.3
1
-138 -135 dBm/Hz 2110 MHz to 2170 MHz
Harmonics
2fo
3fo, 4fo
-
-
-43
-50
-35
-35
dBc
P
OUT < +28.5 dBm
Input Impedance
-
-
2:1
VSWR
P
OUT < +28.5 dBm
Spurious Output Level
(all spurious outputs)
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating conditions
-
-
-70
dBc
Load mismatch stress with no
permanent degradation or failure
10:1
-
-
VSWR Applies over full operating range
Notes:
(1) ACLR and Efficiency measured at 1950 MHz.
Data Sheet - Rev 2.0
12
11/2008
ꢁWt6223ꢃ
ꢁPPLICꢁtION INFOꢃMꢁtION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
appropriate logic level (see Operating Ranges table)
to the VMODE voltage. The Bias Control table lists
the recommended modes of operation for various
applications.
Shutdown Mode
The WCDMA power amplifier may be placed in a
shutdown mode by applying logic low levels (see
Operating Ranges table) to both the VEN and VMODE
voltages.
Two operating modes are recommended to optimize
current consumption. High Bias operating mode is for
POUT levels > 16 dBm. At or below +16 dBm, the PA
should be “Mode Switched” to Low Bias Mode.
Bias Modes
The WCDMApower amplifier may be placed in either a
Low Bias mode or a High Bias mode by applying the
SUPPLY VOLTAGE FROM
DC-DC CONVERTER***
BATTERY
VOLTAGE
4.7uF++
10nF++
22pF**
22
V
BATT
1
2
21
20
19
18
17
16
15
14
13
12
IMT RF INPUT
WCDMA BIAS MODE
WCDMA ENABLE
DCS/PCS RF INPUT
BAND SELECT
WCDMA_IN
V CC_WCDMA
10nF++
22pF**
WCDMA_OUT
V
V
MODE
EN
27pF++
WCDMA RF OUTPUT
DCS/PCS RF OUTPUT
3
GND
27pF++
4
DCS/PCS_PIN
DCS/PCS_OUT
5
BS
GND
27pF++
27pF++
6
ꢁWt6223ꢃ
TX ENABLE
TX_EN
GND
VCC_OUT
GND
7
BATTERY
VOLTAGE
V
C
V
BATT
4.7uF++
10K*
2.7pF**
1nF**
8
EXT
22nF**
27pF*
9
DAC OUTPUT
RAMP
GND
GSM850/900 RF OUTPUT
10
GSM850/900 RF INPUT
GSM850/900_IN
GSM850/900_OUT
V
CC2_GSM
11
*
Filtering may be required to filter noise from baseband.
** This component should be placed as close to the device pin as possible.
*** If the final design uses a DC-DC Converter, otherwise connect Pin 21 directly to VBATT Pin 22.
++ These components are recommended as good design practice for improving noise rejection
characteristics. The values specified are not critical as they may not be required in the final
application.
Figure 4: ꢁpplicaꢄion Circuiꢄ
Data Sheet - Rev 2.0
13
11/2008
ꢁWt6223ꢃ
PꢁCKꢁGꢀ OꢂtLINꢀ
Figure 5: Package Ouꢄline - 22 Pin 6 mm x 8 mm x 1 mm surface Mounꢄ Package
Figure 6: Branding Specification
Data Sheet - Rev 2.0
14
11/2008
ꢁWt6223ꢃ
COMPONꢀNt PꢁCKꢁGING
8.00±.10
[.314±.004]
4.00±.10
[.157±.004]
Ø1.50±.10
[Ø.059±.004]
2.00±.10
[.079±.004]
1.75±.10
[.069±.004]
6°MAX
7.50±.10
[.295±.004]
16.00+.30/-.10
[.630+.012/-.004]
8.36±.10
[.329±.004]
Bo
PIN#1 ORIENTATION
1.78±.10
[.070±.004]
Ko
t
.305±.02
[.0120±.0007]
Ø1.50±.25
[Ø.059±.010]
6.35±.10
[.250±.004]
8°MAX
Ao
NOTES:
1. MATERIAL: 3000 (CARBON FILLED POLYCARBONATE)
100% RECYCLABLE.
Figure 7: tape & ꢃeel Packaging
table 14: tape & ꢃeel Dimenꢅionꢅ
PꢁCKꢁGꢀ tYPꢀ
tꢁPꢀ WIDtH
16 mm
POCKꢀt PItCH ꢃꢀꢀL CꢁPꢁCItY
MꢁX ꢃꢀꢀL DIꢁ
6 mm x 8 mm x 1 mm
8 mm
2500
13"
Data Sheet - Rev 2.0
15
11/2008
ꢁWt6223ꢃ
OꢃDꢀꢃING INFOꢃMꢁtION
tꢀMPꢀꢃꢁtꢂꢃꢀ
ꢃꢁNGꢀ
PꢁCKꢁGꢀ
DꢀsCꢃIPtION
OꢃDꢀꢃ NꢂMBꢀꢃ
COMPONꢀNt PꢁCKꢁGING
RoHS Compliant 24 Pin
6 mm x 8 mm x 1 mm Tape and Reel, 2500 pieces per Reel
Surface Mount Module
AWT6223RM26P8 -20 oC to +85 oC
AWT6223RM26P9 -20 oC to +85 oC
RoHS Compliant 24 Pin
6 mm x 8 mm x 1 mm Tape and Reel, Partial Reel
Surface Mount Module
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: Mktg@anadigics.com
IMPOꢃtꢁNt NOtICꢀ
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
WꢁꢃNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of anANADIGICS product
in any such application without written consent is prohibited.
Data Sheet - Rev 2.0
16
11/2008
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