APM2054NUC-TUL [ANPEC]

N-Channel Enhancement Mode MOSFET; N沟道增强型MOSFET


型号：	APM2054NUC-TUL
厂家：	ANPEC ELECTRONICS COROPRATION
描述：	N-Channel Enhancement Mode MOSFET N沟道增强型MOSFET
文件：	总10页 (文件大小：184K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

APM2054NU

N-Channel Enhancement Mode MOSFET

Features

Pin Description

20V/20A,

R_DS(ON)=35mW (typ.) @ V_GS=10V

R_DS(ON)=45mW (typ.) @ V_GS=4.5V

R_DS(ON)=110mW (typ.) @ V_GS=2.5V

Super High Dense Cell Design

Reliable and Rugged

TopViewof TO-252

Lead Free Available (RoHS Compliant)

Applications

Power Management in Desktop Computer or

DC/DC Converters

N-ChannelMOSFET

Ordering and Marking Information

Package Code

U : TO-252

Operating Junction Temp. Range

APM2054N

Lead Free Code

Handling Code

Temp. Range

Package Code

C : -55 to 150 C

Handling Code

TU : Tube

Lead Free Code

TR : Tape & Reel

L : Lead Free Device Blank : Original Device

APM2054N U :

APM2054N

XXXXX

XXXXX - Date Code

Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;

which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.

ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL

classification at lead-free peak reflow temperature.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise

customers to obtain the latest version of relevant information to verify before placing orders.

www.anpec.com.tw

Rev. B.3 - Oct., 2005

APM2054NU

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (T_A=25°C Unless Otherwise Noted)

±16

V_DSS

V_GSS

T_J

Drain-Source Voltage

Gate-Source Voltage

°C

150

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

T_STG

I_S

-55 to 150

T=25°C

Mounted on Large Heat Sink

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

I_DP

300µs Pulse Drain Current Tested

Continuous Drain Current

I_D

P_D

Maximum Power Dissipation

2.5

R_q

Thermal Resistance-Junction to Case

°C/W

Mounted on PCB of 1in²Pad Area

T_A=25°C

T_A=100°C

T_A=25°C

T_A=100°C

T_A=25°C

T_A=100°C

I_DP

300µs Pulse Drain Current Tested

Continuous Drain Current

I_D

2.5

P_D

Maximum Power Dissipation

R_q

Thermal Resistance-Junction to Ambient

°C/W

Mounted on PCB of Minimum Footprint

T_A=25°C

T_A=100°C

T_A=25°C

T_A=100°C

T_A=25°C

T_A=100°C

I_DP

300µs Pulse Drain Current Tested

Continuous Drain Current

I_D

1.6

0.6

P_D

Maximum Power Dissipation

R_q

Thermal Resistance-Junction to Ambient

°C/W

www.anpec.com.tw

Rev. B.3 - Oct., 2005

APM2054NU

Electrical Characteristics (T_A= 25°C unless otherwise noted)

APM2054NU

Symbol

Parameter

Test Condition

Unit

Min. Typ. Max.

Static Characteristics

BV_DSSDrain-Source Breakdown Voltage

V_GS=0V, I_DS=250 A

V_DS=16V, V_GS=0V

I_DSSZero Gate Voltage Drain Current

T_J=85°C

V_GS(th)Gate Threshold Voltage

I_GSSGate Leakage Current

0.6

0.7

1.5

±100

V_DS=V_GS, I_DS=250 A

V_GS=±16V, V_DS=0V

V_GS=10V, I_DS=12A

V_GS=4.5V, I_DS=6A

V_GS=2.5V, I_DS=2A

R_DS(ON)Drain-Source On-state Resistance

110

130

Diode Characteristics

V_SD

Diode Forward Voltage

I_SD=6A, V_GS=0V

0.7

1.3

Dynamic Characteristics ^b

R_G

C_iss

C_oss

C_rss

Gate Resistance

V_GS=0V,V_DS=0V,F=1MHz

2.3

450

100

Input Capacitance

V_GS=0V,

V_DS=15V,

Frequency=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

t_d(ON)Turn-on Delay Time

T_rTurn-on Rise Time

t_d(OFF)Turn-off Delay Time

T_fTurn-off Fall Time

Gate ChargeCharacteristics ^b

V_DD=10V, R_L=10 ,

I_DS=1A, V_GEN=4.5V,

R_G=6

Q_g

Q_gs

Q_gd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

3.8

1.2

1.4

V_DS=10V, V_GS=4.5V,

I_DS=12A

Notes:

a : Pulse test ; pulse width£300 s, duty cycle£2%.

b : Guaranteed by design, not subject to production testing.

www.anpec.com.tw

Rev. B.3 - Oct., 2005

APM2054NU

Typical Characteristics

Drain Current

Power Dissipation

T_C=25^oC,V_G=10V

T_C=25^oC

20 40 60 80 100 120 140 160 180

Tj - JunctionTemperature (°C)

Tj - Junction Temperature (°C)

Safe Operation Area

Thermal Transient Impedance

100

1ms

Duty = 0.5

0.2

10ms

100ms

0.1

0.05

0.02

0.1

0.01

Single Pulse

Mounted on 1in²pad

T_C=25^oC

_qJA:50^oC/W

0.1

0.01

0.1

1E-4 1E-3 0.01 0.1

100

Square Wave Pulse Duration (sec)

VDS - Drain - Source Voltage (V)

www.anpec.com.tw

Rev. B.3 - Oct., 2005

APM2054NU

Typical Characteristics (Cont.)

Drain-Source On Resistance

Output Characteristics

120

110

100

V_GS=4,5,6,7,8,9,10V

V_GS=2.5V

V_GS=4.5V

V_GS=10V

1.6

0.0

0.4

0.8

1.2

2.0

10 12 14 16 18 20

VDS - Drain - Source Voltage (V)

ID - Drain Current (A)

Gate Threshold Voltage

Transfer Characteristics

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

I_DS=250mA

T_j=125^oC

T_j=-55^oC

T_j=25^oC

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

-50 -25

25 50 75 100 125 150

Tj - Junction Temperature (°C)

VGS - Gate - Source Voltage (V)

Rev. B.3 - Oct., 2005

www.anpec.com.tw

APM2054NU

Typical Characteristics (Cont.)

Drain-Source On Resistance

Source-Drain Diode Forward

2.5

V_GS= 10V

I_DS= 12A

2.0

T_j=150^oC

1.5

1.0

0.5

T_j=25^oC

R_ON@T_j=25^oC: 35mW

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

-50 -25

25 50 75 100 125 150

Tj - Junction Temperature (°C)

VSD - Source - Drain Voltage (V)

Capacitance

Gate Charge

700

600

500

400

300

200

100

V_DS=10V

I_D= 12A

Frequency=1MHz

Ciss

Coss

Crss

QG - Gate Charge (nC)

VDS - Drain - Source Voltage (V)

www.anpec.com.tw

Rev. B.3 - Oct., 2005

APM2054NU

Package Information

TO-252(ReferenceJEDECRegistration TO-252)

b 2

C 1

L 2

L 1

e 1

D 1

A 1

E 1

Millimeters

Dim

Inches

Min.

Max.

2.39

1.27

0.89

5.461

0.58

6.22

Min.

0.086

0.035

0.020

0.205

0.018

0.210

Max.

0.094

0.050

0.035

0.215

0.023

0.245

2.18

0.89

0.508

5.207

0.46

5.334

5.2 REF

5.3 REF

0.205 REF

0.209 REF

6.35

6.73

0.250

0.265

3.96

9.398

0.51

0.64

0.89

5.18

0.156

0.370

0.020

0.025

0.035

0.204

0.410

10.41

1.02

0.040

0.080

2.032

www.anpec.com.tw

Rev. B.3 - Oct., 2005

APM2054NU

Physical Specifications

Terminal Material

Lead Solderability

Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn

Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

T_P

Critical Zone

T_Lto T_P

Ramp-up

T_L

t_L

Tsmax

Tsmin

Ramp-down

Preheat

t 25 C to Peak

Time

Classification Reflow Profiles

Profile Feature

Average ramp-up rate

(T_Lto T_P)

Sn-Pb Eutectic Assembly

Pb-Free Assembly

3 C/second max.

Preheat

150 C

100 C

Temperature Min (Tsmin)

Temperature Max (Tsmax)

Time (min to max) (ts)

150 C

200 C

60-120 seconds

60-180 seconds

Time maintained above:

183 C

217 C

Temperature (T_L)

Time (t_L)

60-150 seconds

Peak/Classificatioon Temperature (Tp)

See table 1

See table 2

Time within 5 C of actual

10-30 seconds

20-40 seconds

Peak Temperature (tp)

Ramp-down Rate

6 C/second max.

6 minutes max.

8 minutes max.

Time 25 C to Peak Temperature

Notes: All temperatures refer to topside of the package .Measured on the body surface.

www.anpec.com.tw

Rev. B.3 - Oct., 2005

APM2054NU

Classification Reflow Profiles(Cont.)

Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures

Package Thickness

Volume mm³

<350

Volume mm³

350

<2.5 mm

225 +0/-5 C

240 +0/-5 C

2.5 mm

225 +0/-5 C

Table 2. Pb-free Process – Package Classification Reflow Temperatures

Package Thickness

Volume mm³

<350

Volume mm³

350-2000

Volume mm³

>2000

<1.6 mm

260 +0 C*

1.6 mm – 2.5 mm

245 +0 C*

260 +0 C*

250 +0 C*

245 +0 C*

2.5 mm

*Tolerance: The device manufacturer/supplier

including the stated classification temperature (this means Peak reflow temperature +0 C.

250 +0 C*

245 +0 C*

shall

assure process compatibility up to and

For example 260 C+0 C) at the rated MSL level.

Reliability Test Program

Test item

SOLDERABILITY

HOLT

PCT

TST

Method

MIL-STD-883D-2003

MIL-STD 883D-1005.7

JESD-22-B, A102

Description

245°C,5 SEC

1000 Hrs Bias @ 125°C

168 Hrs, 100% RH, 121°C

-65°C ~ 150°C, 200 Cycles

MIL-STD 883D-1011.9

Carrier Tape & Reel Dimensions

www.anpec.com.tw

Rev. B.3 - Oct., 2005

APM2054NU

Carrier Tape & Reel Dimensions (Cont.)

Application

TO-252

16.4 + 0.3

-0.2

16+ 0.3

- 0.1

330 3

100

13 0. 5

0.5

2.5 0.5

0.1 1.75 0.1

± ±

7.5 0.1 1.5 +0.1 1.5 0.25 4.0 0.1 2.0 0.1 6.8 0.1 10.4 0.1 2.5 0.1 0.3 0.05

(mm)

Cover Tape Dimensions

Application

Carrier Width

Cover Tape Width

Devices Per Reel

TO- 252

13.3

2500

Customer Service

Anpec Electronics Corp.

Head Office :

No.6, Dusing 1st Road, SBIP,

Hsin-Chu, Taiwan, R.O.C.

Tel : 886-3-5642000

Fax : 886-3-5642050

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,

Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.

Tel : 886-2-89191368

Fax : 886-2-89191369

Rev. B.3 - Oct., 2005

www.anpec.com.tw

相关型号：