APM2055NUC-TR [ANPEC]

N-Channel Enhancement Mode MOSFET; N沟道增强型MOSFET
APM2055NUC-TR
型号: APM2055NUC-TR
厂家: ANPEC ELECTRONICS COROPRATION    ANPEC ELECTRONICS COROPRATION
描述:

N-Channel Enhancement Mode MOSFET
N沟道增强型MOSFET

文件: 总10页 (文件大小:151K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
APM2055N  
N-Channel Enhancement Mode MOSFET  
Features  
Pin Description  
20V/12A, RDS(ON)=55m(typ.) @ VGS=10V  
RDS(ON)=75m(typ.) @ VGS=4.5V  
RDS(ON)=140m(typ.) @ VGS=2.5V  
1
2
3
Super High Dense Cell Design  
1
2
3
High Power and Current Handling Capability  
TO-252 and SOT-223 Packages  
G
D
S
G
D
S
Top View of TO-252  
Top View of SOT-223  
D
Applications  
Switching Regulators  
Switching Converters  
G
S
Ordering and Marking Information  
N-Channel MOSFET  
Package C ode  
U : TO -252  
APM2055N  
V : SO T-223  
Handling C ode  
Tem p. R ange  
Package C ode  
O peration Junction Tem p. Range  
°
C : -55 to 150  
Handling C ode  
C
TR : Tape & R eel  
- D ate Code  
- D ate Code  
XX XXX  
XX XXX  
AP M 2055N U :  
AP M 2055N V :  
AP M 2055N  
XX XXX  
AP M 2055N  
XX XXX  
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Rating  
20  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
±16  
12  
Maximum Drain Current – Continuous  
Maximum Drain Current – Pulsed  
A
IDM  
20  
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise  
customers to obtain the latest version of relevant information to verify before placing orders.  
Copyright ANPEC Electronics Corp.  
Rev. A.1 - Feb., 2003  
1
www.anpec.com.tw  
APM2055N  
Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted)  
Symbol  
Parameter  
T =25 C  
Rating  
Unit  
TO-252  
50  
3
°
A
SOT-223  
TO-252  
W
PD  
Maximum Power Dissipation  
10  
1.2  
150  
T =100 C  
°
A
SOT-223  
TJ  
Maximum Junction Temperature  
Storage Temperature Range  
C
C
°
°
TSTG  
-55 to 150  
50  
Thermal Resistance – Junction to Ambient  
Rθ  
C/W  
°
jA  
Electrical Characteristics (TA = 25°C unless otherwise noted)  
APM2055N  
Typ.  
Symbol  
Static  
Parameter  
Test Condition  
Unit  
Min.  
Max.  
BVDSS Drain-Source Breakdown  
Voltage  
V =0V, I =250 A  
µ
GS  
D
20  
V
IDSS  
Zero Gate Voltage Drain  
Current  
VGS(th) Gate Threshold Voltage  
VDS=16V, VGS=0V  
V =V , I =250 A  
1
A
µ
µ
0.7  
0.9  
1.5  
V
DS  
GS  
D
IGSS Gate Leakage Current  
V = 16V, V =0V  
±
nA  
GS  
DS  
100  
70  
±
RDS(ON) Drain-Source On-state  
Resistance  
VGS=10V, ID=12A  
55  
75  
VGS=4.5V, ID=6A  
VGS=2.5V, ID=2A  
IS=2A, VGS=0V  
90  
m
140  
0.7  
160  
1.3  
VSD  
Dynamic  
Qg  
Diode Forward Voltage  
V
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
VDS=15V, VGS=4.5V,  
ID=1.5A  
7
8.5  
Qgs  
2.5  
nC  
ns  
Qgd  
1.5  
9.2  
14  
31  
16  
td(ON)  
tr  
td(OFF)  
tf  
Turn-on Delay Time  
Turn-on Rise Time  
VDD=15V, ID=2A,  
18.6  
27  
V =10V, R =6  
GS  
G
Turn-off Delay Time  
Turn-off Fall Time  
58  
21  
Copyright ANPEC Electronics Corp.  
Rev. A.1 - Feb., 2003  
2
www.anpec.com.tw  
APM2055N  
Typical Characteristics  
Output Characteristics  
Transfer Characteristics  
20  
20  
16  
12  
8
VGS=4,5,6,7,8,9,10V  
16  
VGS=3V  
12  
8
4
0
TJ=125°C  
TJ=25°C  
VGS=2V  
4
TJ=-55°C  
0
0
1
2
3
4
5
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
VDS - Drain-to-Source Voltage (V)  
VGS - Gate-to-Source Voltage (V)  
Threshold Voltage vs. Junction Temperature  
On-Resistance vs. Drain Current  
0.125  
0.100  
0.075  
0.050  
0.025  
0.000  
1.50  
IDS=250uA  
1.25  
1.00  
0.75  
0.50  
0.25  
0.00  
VGS=4.5V  
VGS=10V  
0
2
4
6
8
10 12 14 16 18 20  
-50 -25  
0
25 50 75 100 125 150  
Tj - Junction Temperature (°C)  
ID - Drain Current (A)  
Copyright ANPEC Electronics Corp.  
Rev. A.1 - Feb., 2003  
3
www.anpec.com.tw  
APM2055N  
Typical Characteristics (Cont.)  
On-Resistance vs. Gate-to-Source Voltage  
On-Resistance vs. Junction Temperature  
2.25  
0.200  
ID=5A  
VGS=4.5V  
ID=5A  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
0.25  
0.00  
0.175  
0.150  
0.125  
0.100  
0.075  
0.050  
0.025  
-50 -25  
0
25 50 75 100 125 150  
0
1
2
3
4
5
6
7
8
VGS - Gate-to-Source Voltage (V)  
TJ - Junction Temperature (°C)  
Gate Charge  
Capacitance  
5
4
3
2
1
0
600  
500  
400  
300  
200  
100  
0
Frequency=1MHz  
VDS=15V  
ID=1.5A  
Ciss  
Coss  
Crss  
0
1
2
3
4
5
6
7
8
0
5
10  
15  
20  
QG - Gate Charge (nC)  
VDS - Drain-to-Source Voltage (V)  
Copyright ANPEC Electronics Corp.  
Rev. A.1 - Feb., 2003  
4
www.anpec.com.tw  
APM2055N  
Typical Characteristics (Cont.)  
Source-Drain Diode Forward Voltage  
Single Pulse Power  
250  
200  
150  
100  
50  
20  
10  
1
TJ=150°C  
TJ=25°C  
0.1  
0
1E-3  
0.01  
0.1  
1
10  
100  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
VSD -Source-to-Drain Voltage (V)  
Time (sec)  
Normalized Thermal Transient Impedence, Junction to Ambient  
1
Duty Cycle=0.5  
D=0.2  
D=0.1  
D=0.05  
D=0.02  
D=0.01  
0.1  
SINGLE PULSE  
1.Duty Cycle, D=t1/t2  
2.Per Unit Base=RthJA=50°C/W  
3.TJM-TA=PDMZthJA  
0.01  
1E-4  
1E-3  
0.01  
0.1  
1
10  
100  
Square Wave Pulse Duration (sec)  
Copyright ANPEC Electronics Corp.  
Rev. A.1 - Feb., 2003  
5
www.anpec.com.tw  
APM2055N  
Package Information  
SOT-223( Reference JEDEC Registration SOT-223)  
D
A
a
B1  
c
H
E
L
K
e
A1  
e1  
b
B
Dim  
Millimeters  
Inches  
Min.  
1.50  
0.02  
0.60  
2.90  
0.28  
6.30  
3.30  
Max.  
1.80  
0.08  
0.80  
3.10  
0.32  
6.70  
3.70  
Min.  
0.06  
Max.  
0.07  
A
A1  
B
B1  
c
0.02  
0.11  
0.01  
0.25  
0.13  
0.03  
0.12  
0.01  
0.26  
0.15  
D
E
e
2.3 BSC  
4.6 BSC  
0.09 BSC  
0.18 BSC  
e1  
H
L
6.70  
0.91  
1.50  
7.30  
1.10  
2.00  
0.26  
0.04  
0.06  
0.29  
0.04  
0.08  
K
0
10  
0
10  
°
α
°
°
°
13  
13  
°
β
°
Copyright ANPEC Electronics Corp.  
Rev. A.1 - Feb., 2003  
6
www.anpec.com.tw  
APM2055N  
Package Information (Cont.)  
TO-252( Reference JEDEC Registration TO-252)  
E
A
b2  
C1  
L2  
D
H
L1  
L
b
C
e1  
A1  
Millimeters  
Dim  
Inches  
Min.  
2.18  
0.89  
0.508  
5.207  
0.46  
0.46  
5.334  
6.35  
3.96  
9.398  
0.51  
0.64  
0.89  
Max.  
2.39  
1.27  
0.89  
5.461  
0.58  
0.58  
6.22  
6.73  
5.18  
10.41  
Min.  
Max.  
0.094  
0.050  
0.035  
0.215  
0.023  
0.023  
0.245  
0.265  
0.204  
0.410  
A
A1  
b
0.086  
0.035  
0.020  
0.205  
0.018  
0.018  
0.210  
0.250  
0.156  
0.370  
0.020  
0.025  
0.035  
b2  
C
C1  
D
E
e1  
H
L
L1  
L2  
1.02  
0.040  
0.080  
2.032  
Copyright ANPEC Electronics Corp.  
Rev. A.1 - Feb., 2003  
7
www.anpec.com.tw  
APM2055N  
Physical Specifications  
Terminal Material  
Lead Solderability  
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)  
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.  
Reflow Condition (IR/Convection or VPR Reflow)  
Reference JEDEC Standard J-STD-020A APRIL 1999  
Peak temperature  
°
183 C  
Pre-heat temperature  
Time  
Classification Reflow Profiles  
Convection or IR/  
Convection  
VPR  
Average ramp-up rate(183 C to Peak)  
3 C/second max.  
°
10 C /second max.  
°
°
120 seconds max  
60 – 150 seconds  
10 –20 seconds  
Preheat temperature 125 ± 25 C)  
Temperature maintained above 183 C  
°
°
60 seconds  
Time within 5 C of actual peak temperature  
°
Peak temperature range  
Ramp-down rate  
220 +5/-0 C or 235 +5/-0 C 215-219 C or 235 +5/-0 C  
°
°
°
°
6 C /second max.  
10 C /second max.  
°
°
6 minutes max.  
Time 25 C to peak temperature  
°
Package Reflow Conditions  
pkg. thickness < 2.5mm and  
pkg. volume 350 mm³  
pkg. thickness < 2.5mm and pkg.  
volume < 350mm³  
pkg. thickness 2.5mm  
and all bgas  
Convection 220 +5/-0 C  
Convection 235 +5/-0 C  
°
°
VPR 215-219 C  
VPR 235 +5/-0 C  
°
°
IR/Convection 220 +5/-0 C  
IR/Convection 235 +5/-0 C  
°
°
Copyright ANPEC Electronics Corp.  
Rev. A.1 - Feb., 2003  
8
www.anpec.com.tw  
APM2055N  
Reliability test program  
Test item  
SOLDERABILITY  
Method  
Description  
245°C,5 SEC  
1000 Hrs Bias @ 125°C  
168 Hrs, 100% RH, 121°C  
-65°C ~ 150°C, 200 Cycles  
MIL-STD-883D-2003  
MIL-STD 883D-1005.7  
JESD-22-B, A102  
HOLT  
PCT  
TST  
MIL-STD 883D-1011.9  
Carrier Tape  
t
D
P
Po  
E
F
P1  
Bo  
W
Ko  
Ao  
D1  
T2  
J
C
A
B
T1  
A
B
C
J
T1  
T2  
W
P
E
Application  
SOT-223  
12.75  
0.15  
±
330 1  
62 1.5  
±
2
0.6  
12.4 +0.2  
2 0.2  
±
12 0.3  
8
0.1  
1.75 0.1  
±
±
±
±
±
F
D
D1  
Po  
P1  
Ao  
Bo  
Ko  
t
5.5 0.05 1.5+ 0.1 1.5+ 0.1 4.0 0.1 2.0 0.05 6.9 0.1 7.5 0.1  
2.1 0.1 0.3 0.05  
±
±
±
±
±
±
±
A
B
C
J
T1  
T2  
W
P
E
Application  
TO-252  
16.4 + 0.3  
-0.2  
16+ 0.3  
- 0.1  
330 3  
100  
2
13 0. 5  
2
0.5  
2.5 0.5  
8
0.1  
1.75 0.1  
±
±
±
±
±
±
±
F
D
D1  
Po  
P1  
Ao  
Bo  
Ko  
t
7.5 0.1 1.5 +0.1 1.5 0.25 4.0 0.1 2.0 0.1 6.8 0.1 10.4 0.1 2.5 0.1 0.3 0.05  
±
±
±
±
±
±
±
±
Copyright ANPEC Electronics Corp.  
Rev. A.1 - Feb., 2003  
9
www.anpec.com.tw  
APM2055N  
Cover Tape Dimensions  
Application  
SOT- 223  
TO- 252  
Carrier Width  
Cover Tape Width  
Devices Per Reel  
12  
16  
9.3  
13.3  
2500  
2500  
Customer Service  
Anpec Electronics Corp.  
Head Office :  
5F, No. 2 Li-Hsin Road, SBIP,  
Hsin-Chu, Taiwan, R.O.C.  
Tel : 886-3-5642000  
Fax : 886-3-5642050  
Taipei Branch :  
7F, No. 137, Lane 235, Pac Chiao Rd.,  
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.  
Tel : 886-2-89191368  
Fax : 886-2-89191369  
Copyright ANPEC Electronics Corp.  
Rev. A.1 - Feb., 2003  
10  
www.anpec.com.tw  

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