APM2055NUC-TR [ANPEC]
N-Channel Enhancement Mode MOSFET; N沟道增强型MOSFET型号: | APM2055NUC-TR |
厂家: | ANPEC ELECTRONICS COROPRATION |
描述: | N-Channel Enhancement Mode MOSFET |
文件: | 总10页 (文件大小:151K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
APM2055N
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
20V/12A, RDS(ON)=55mΩ(typ.) @ VGS=10V
RDS(ON)=75mΩ(typ.) @ VGS=4.5V
RDS(ON)=140mΩ(typ.) @ VGS=2.5V
1
2
3
•
•
•
Super High Dense Cell Design
1
2
3
High Power and Current Handling Capability
TO-252 and SOT-223 Packages
G
D
S
G
D
S
Top View of TO-252
Top View of SOT-223
D
Applications
•
•
Switching Regulators
Switching Converters
G
S
Ordering and Marking Information
N-Channel MOSFET
Package C ode
U : TO -252
APM2055N
V : SO T-223
Handling C ode
Tem p. R ange
Package C ode
O peration Junction Tem p. Range
°
C : -55 to 150
Handling C ode
C
TR : Tape & R eel
- D ate Code
- D ate Code
XX XXX
XX XXX
AP M 2055N U :
AP M 2055N V :
AP M 2055N
XX XXX
AP M 2055N
XX XXX
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
VGSS
ID
Parameter
Rating
20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
±16
12
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
A
IDM
20
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
1
www.anpec.com.tw
APM2055N
Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted)
Symbol
Parameter
T =25 C
Rating
Unit
TO-252
50
3
°
A
SOT-223
TO-252
W
PD
Maximum Power Dissipation
10
1.2
150
T =100 C
°
A
SOT-223
TJ
Maximum Junction Temperature
Storage Temperature Range
C
C
°
°
TSTG
-55 to 150
50
Thermal Resistance – Junction to Ambient
Rθ
C/W
°
jA
Electrical Characteristics (TA = 25°C unless otherwise noted)
APM2055N
Typ.
Symbol
Static
Parameter
Test Condition
Unit
Min.
Max.
BVDSS Drain-Source Breakdown
Voltage
V =0V, I =250 A
µ
GS
D
20
V
IDSS
Zero Gate Voltage Drain
Current
VGS(th) Gate Threshold Voltage
VDS=16V, VGS=0V
V =V , I =250 A
1
A
µ
µ
0.7
0.9
1.5
V
DS
GS
D
IGSS Gate Leakage Current
V = 16V, V =0V
±
nA
GS
DS
100
70
±
RDS(ON) Drain-Source On-state
Resistance
VGS=10V, ID=12A
55
75
VGS=4.5V, ID=6A
VGS=2.5V, ID=2A
IS=2A, VGS=0V
90
m
Ω
140
0.7
160
1.3
VSD
Dynamic
Qg
Diode Forward Voltage
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=15V, VGS=4.5V,
ID=1.5A
7
8.5
Qgs
2.5
nC
ns
Qgd
1.5
9.2
14
31
16
td(ON)
tr
td(OFF)
tf
Turn-on Delay Time
Turn-on Rise Time
VDD=15V, ID=2A,
18.6
27
V =10V, R =6
Ω
GS
G
Turn-off Delay Time
Turn-off Fall Time
58
21
Copyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
2
www.anpec.com.tw
APM2055N
Typical Characteristics
Output Characteristics
Transfer Characteristics
20
20
16
12
8
VGS=4,5,6,7,8,9,10V
16
VGS=3V
12
8
4
0
TJ=125°C
TJ=25°C
VGS=2V
4
TJ=-55°C
0
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
On-Resistance vs. Drain Current
0.125
0.100
0.075
0.050
0.025
0.000
1.50
IDS=250uA
1.25
1.00
0.75
0.50
0.25
0.00
VGS=4.5V
VGS=10V
0
2
4
6
8
10 12 14 16 18 20
-50 -25
0
25 50 75 100 125 150
Tj - Junction Temperature (°C)
ID - Drain Current (A)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
3
www.anpec.com.tw
APM2055N
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
2.25
0.200
ID=5A
VGS=4.5V
ID=5A
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
0.175
0.150
0.125
0.100
0.075
0.050
0.025
-50 -25
0
25 50 75 100 125 150
0
1
2
3
4
5
6
7
8
VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (°C)
Gate Charge
Capacitance
5
4
3
2
1
0
600
500
400
300
200
100
0
Frequency=1MHz
VDS=15V
ID=1.5A
Ciss
Coss
Crss
0
1
2
3
4
5
6
7
8
0
5
10
15
20
QG - Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
4
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APM2055N
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
Single Pulse Power
250
200
150
100
50
20
10
1
TJ=150°C
TJ=25°C
0.1
0
1E-3
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD -Source-to-Drain Voltage (V)
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
0.1
SINGLE PULSE
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
0.01
1E-4
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
5
www.anpec.com.tw
APM2055N
Package Information
SOT-223( Reference JEDEC Registration SOT-223)
D
A
a
B1
c
H
E
L
K
e
A1
e1
b
B
Dim
Millimeters
Inches
Min.
1.50
0.02
0.60
2.90
0.28
6.30
3.30
Max.
1.80
0.08
0.80
3.10
0.32
6.70
3.70
Min.
0.06
Max.
0.07
A
A1
B
B1
c
0.02
0.11
0.01
0.25
0.13
0.03
0.12
0.01
0.26
0.15
D
E
e
2.3 BSC
4.6 BSC
0.09 BSC
0.18 BSC
e1
H
L
6.70
0.91
1.50
7.30
1.10
2.00
0.26
0.04
0.06
0.29
0.04
0.08
K
0
10
0
10
°
α
°
°
°
13
13
°
β
°
Copyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
6
www.anpec.com.tw
APM2055N
Package Information (Cont.)
TO-252( Reference JEDEC Registration TO-252)
E
A
b2
C1
L2
D
H
L1
L
b
C
e1
A1
Millimeters
Dim
Inches
Min.
2.18
0.89
0.508
5.207
0.46
0.46
5.334
6.35
3.96
9.398
0.51
0.64
0.89
Max.
2.39
1.27
0.89
5.461
0.58
0.58
6.22
6.73
5.18
10.41
Min.
Max.
0.094
0.050
0.035
0.215
0.023
0.023
0.245
0.265
0.204
0.410
A
A1
b
0.086
0.035
0.020
0.205
0.018
0.018
0.210
0.250
0.156
0.370
0.020
0.025
0.035
b2
C
C1
D
E
e1
H
L
L1
L2
1.02
0.040
0.080
2.032
Copyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
7
www.anpec.com.tw
APM2055N
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
°
183 C
Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/
Convection
VPR
Average ramp-up rate(183 C to Peak)
3 C/second max.
°
10 C /second max.
°
°
120 seconds max
60 – 150 seconds
10 –20 seconds
Preheat temperature 125 ± 25 C)
Temperature maintained above 183 C
°
°
60 seconds
Time within 5 C of actual peak temperature
°
Peak temperature range
Ramp-down rate
220 +5/-0 C or 235 +5/-0 C 215-219 C or 235 +5/-0 C
°
°
°
°
6 C /second max.
10 C /second max.
°
°
6 minutes max.
Time 25 C to peak temperature
°
Package Reflow Conditions
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
pkg. thickness 2.5mm
and all bgas
≥
Convection 220 +5/-0 C
Convection 235 +5/-0 C
°
°
VPR 215-219 C
VPR 235 +5/-0 C
°
°
IR/Convection 220 +5/-0 C
IR/Convection 235 +5/-0 C
°
°
Copyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
8
www.anpec.com.tw
APM2055N
Reliability test program
Test item
SOLDERABILITY
Method
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
HOLT
PCT
TST
MIL-STD 883D-1011.9
Carrier Tape
t
D
P
Po
E
F
P1
Bo
W
Ko
Ao
D1
T2
J
C
A
B
T1
A
B
C
J
T1
T2
W
P
E
Application
SOT-223
12.75
0.15
±
330 1
62 1.5
±
2
0.6
12.4 +0.2
2 0.2
±
12 0.3
8
0.1
1.75 0.1
±
±
±
±
±
F
D
D1
Po
P1
Ao
Bo
Ko
t
5.5 0.05 1.5+ 0.1 1.5+ 0.1 4.0 0.1 2.0 0.05 6.9 0.1 7.5 0.1
2.1 0.1 0.3 0.05
±
±
±
±
±
±
±
A
B
C
J
T1
T2
W
P
E
Application
TO-252
16.4 + 0.3
-0.2
16+ 0.3
- 0.1
330 3
100
2
13 0. 5
2
0.5
2.5 0.5
8
0.1
1.75 0.1
±
±
±
±
±
±
±
F
D
D1
Po
P1
Ao
Bo
Ko
t
7.5 0.1 1.5 +0.1 1.5 0.25 4.0 0.1 2.0 0.1 6.8 0.1 10.4 0.1 2.5 0.1 0.3 0.05
±
±
±
±
±
±
±
±
Copyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
9
www.anpec.com.tw
APM2055N
Cover Tape Dimensions
Application
SOT- 223
TO- 252
Carrier Width
Cover Tape Width
Devices Per Reel
12
16
9.3
13.3
2500
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
10
www.anpec.com.tw
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