APM3005NUC-TRL [ANPEC]
N-Channel Enhancement Mode MOSFET; N沟道增强型MOSFET
| 型号： | APM3005NUC-TRL |
| 厂家： | 
ANPEC ELECTRONICS COROPRATION |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总11页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APM3005NU
N-Channel Enhancement Mode MOSFET
Features
Pin Description
·
30V/50A,
RDS(ON)=4.5mW (typ.) @ VGS=10V
RDS(ON)=7mW (typ.) @ VGS=4.5V
G
D
·
·
Super High Dense Cell Design
Avalanche Rated
S
TopViewof TO-252
·
·
Reliable and Rugged
D
Lead Free Available (RoHS Compliant)
Applications
G
·
Power Management in Desktop Computer or
DC/DC Converters
S
N-ChannelMOSFET
Ordering and Marking Information
Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150 C
Handling Code
APM3005N
Lead Free Code
°
Handling Code
Temp. Range
Package Code
TU : Tube
Lead Free Code
TR : Tape & Reel
L : Lead Free Device Blank : Original Device
APM3005N U :
APM3005N
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;
which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL
classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã ANPEC Electronics Corp.
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Rev. B.3 - Oct., 2005
APM3005NU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(TA = 25°C Unless Otherwise Noted)
30
±20
VDSS
Drain-Source Voltage
V
VGSS
TJ
Gate-Source Voltage
°C
°C
A
150
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
TSTG
IS
-55 to 150
16
Mounted on Large Heat Sink
TC=25°C
TC=100°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
100
75
50*
IDP
A
A
m
300 s Pulse Drain Current Tested
ID
Continuous Drain Current
30
50
PD
Maximum Power Dissipation
W
20
2.5
Rq
Thermal Resistance-Junction to Case
°C/W
JC
Mounted on PCB of 1in2 Pad Area
TA=25°C
TA=100°C
TA=25°C
TA=100°C
TA=25°C
TA=100°C
100
75
IDP
A
A
m
300 s Pulse Drain Current Tested
17
ID
Continuous Drain Current
10
2.5
PD
Maximum Power Dissipation
W
1
Rq
Thermal Resistance-Junction to Ambient
50
°C/W
JA
Mounted on PCB of Minimum Footprint
TA=25°C
TA=100°C
TA=25°C
TA=100°C
TA=25°C
TA=100°C
100
75
14
9
IDP
A
A
m
300 s Pulse Drain Current Tested
ID
Continuous Drain Current
1.6
0.6
PD
Maximum Power Dissipation
W
Rq
Thermal Resistance-Junction to Ambient
75
°C/W
JA
Note:
* Current limited by bond wire.
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Rev. B.3 - Oct., 2005
APM3005NU
Electrical Characteristics (TA = 25°C unless otherwise noted)
APM3005NU
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Drain-Source Avalanche Ratings
EAS
Drain-Source Avalanche Energy
ID=11A, VDD=20V
30
mJ
V
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
30
m
VGS=0V, IDS=250 A
VDS=24V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
m
A
30
°
TJ=85 C
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
1
1.5
2
V
m
VDS=VGS, IDS=250 A
VGS=±20V, VDS=0V
VGS=10V, IDS=40A
VGS=4.5V, IDS=20A
±100
5.5
nA
4.5
7
a
RDS(ON) Drain-Source On-state Resistance
W
m
8.5
Diode Characteristics
a
VSD
Diode Forward Voltage
ISD=20A, VGS=0V
0.7
1.3
V
Dynamic Characteristicsb
RG
Ciss
Coss
Crss
td(ON)
Tr
Gate Resistance
Frequency=1.0MHz
1.5
3300
1180
790
13
W
pF
Input Capacitance
VGS=0V,
VDS=15V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
20
15
66
28
W
VDD=15V, RL=15 ,
9
IDS=1A, VGEN=10V,
ns
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristicsb
43
W
RG=6
14
Qg
Qgs
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
34.2
7
45
VDS=15V, VGS=4.5V,
IDS=30A
nC
Qgd
14.8
Notes:
a : Pulse test ; pulse width £300ms, duty cycle £ 2%.
b : Guaranteed by design, not subject to production testing.
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Rev. B.3 - Oct., 2005
APM3005NU
Typical Characteristics
Drain Current
Power Dissipation
60
60
50
40
30
20
10
0
50
40
30
20
10
TC=25oC,VG=10V
TC=25oC
0
0
20 40 60 80 100 120 140 160 180
0
20 40 60 80 100 120 140 160 180
Tj - JunctionTemperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
300
100
2
1
Duty = 0.5
0.2
0.1
10ms
0.1
0.01
1E-3
100ms
0.05
10
1
0.02
1s
0.01
DC
Single Pulse
Mounted on 1in2 pad
R
qJA :50oC/W
Tc=25oC
0.1
0.1
1E-4 1E-3 0.01 0.1
1
10
100
1
10
80
Square Wave Pulse Duration (sec)
VDS - Drain - Source Voltage (V)
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Rev. B.3 - Oct., 2005
APM3005NU
Typical Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
100
12
10
8
VGS=3.5,4,5,6,7,8,9,10V
80
VGS=4.5V
60
3V
6
VGS=10V
40
4
2.5V
20
2
2V
0
0
0
2
4
6
8
10
0
20
40
60
80
100
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Gate Threshold Voltage
Transfer Characteristics
100
80
60
40
20
0
1.5
1.2
0.9
0.6
0.3
0.0
IDS =250mA
Tj=125oC
Tj=-55oC
Tj=25oC
0
1
2
3
4
5
-50 -25
0
25 50 75 100 125 150
Tj - Junction Temperature (°C)
VGS - Gate - Source Voltage (V)
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Rev. B.3 - Oct., 2005
APM3005NU
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.00
100
10
1
VGS = 10V
IDS = 40A
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
Tj=150oC
Tj=25oC
RON@Tj=25oC: 4.5mW
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
-50 -25
0
25 50 75 100 125 150
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Capacitance
Gate Charge
10
5000
4000
3000
2000
1000
0
Frequency=1MHz
VDS=15V
ID = 30A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
5
10
15
20
25
0
10 20 30 40 50 60 70 80
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
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Rev. B.3 - Oct., 2005
APM3005NU
Avalanche Test Circuit and Waveforms
VDS
VDSX(SUS)
L
tp
VDS
DUT
IAS
RG
VDD
VDD
IL
tp
EAS
0.01W
tAV
Switching Time Test Circuit and Waveforms
VDS
RD
VDS
90%
DUT
V GS
RG
VDD
10%
tp
VGS
td(on) tr
td(off) tf
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Rev. B.3 - Oct., 2005
APM3005NU
Package Information
TO-252(ReferenceJEDECRegistration TO-252)
E
A
b 2
C 1
L 2
D
H
L 1
L
b
C
e 1
D 1
A 1
E 1
Millimeters
Dim
Inches
Min.
Max.
2.39
1.27
0.89
5.461
0.58
0.58
6.22
Min.
Max.
0.094
0.050
0.035
0.215
0.023
0.023
0.245
A
A1
b
2.18
0.89
0.086
0.035
0.020
0.205
0.018
0.018
0.210
0.508
5.207
0.46
b2
C
C1
D
0.46
5.334
D1
E
5.2 REF
5.3 REF
0.205 REF
0.209 REF
6.35
6.73
0.250
0.265
E1
e1
H
3.96
9.398
0.51
0.64
0.89
5.18
0.156
0.370
0.020
0.025
0.035
0.204
0.410
10.41
L
L1
L2
1.02
0.040
0.080
2.032
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Rev. B.3 - Oct., 2005
APM3005NU
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
tp
TP
Critical Zone
TL to TP
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
°
t 25 C to Peak
Time
Classificatin Reflow Profiles
Sn-Pb Eutectic Assembly
Large Body Small Body
Pb-Free Assembly
Profile Feature
Large Body
Small Body
Average ramp-up rate
(TL to TP)
°
°
3 C/second max.
3 C/second max.
Preheat
-
-
-
Temperature Min (Tsmin)
Temperature Mix (Tsmax)
Time (min to max)(ts)
°
°
150 C
100 C
°
°
150 C
200 C
60-120 seconds
60-180 seconds
Tsmax to TL
°
3 C/second max
- Ramp-up Rate
Tsmax to TL
-
-
Temperature(TL)
Time (tL)
°
°
183 C
217 C
60-150 seconds
60-150 seconds
Peak Temperature(Tp)
°
°
°
°
250 +0/-5 C
225 +0/-5 C
240 +0/-5 C
245 +0/-5 C
°
Time within 5 C of actual Peak
10-30 seconds
10-30 seconds
10-30 seconds 20-40 seconds
Temperature(tp)
Ramp-down Rate
°
°
6 C/second max.
6 C/second max.
6 minutes max.
8 minutes max.
°
Time 25 C to Peak Temperature
Note: All temperatures refer to topside of the package. Measured on the body surface.
Copyright ã ANPEC Electronics Corp.
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Rev. B.3 - Oct., 2005
APM3005NU
Reliability Test Program
Test item
SOLDERABILITY
Method
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
HOLT
PCT
TST
MIL-STD 883D-1011.9
Carrier Tape & Reel Dimensions
t
D
P
Po
E
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
B
T1
Application
TO-252
A
B
C
J
T1
16.4 + 0.3
-0.2
T2
W
16+ 0.3
- 0.1
P
E
330 3
100
2
13 0. 5
2
0.5
2.5 0.5
8
0.1 1.75 0.1
± ±
±
±
±
±
±
F
D
D1
Po
P1
Ao
Bo
Ko
t
7.5 0.1 1.5 +0.1 1.5 0.25 4.0 0.1 2.0 0.1 6.8 0.1 10.4 0.1 2.5 0.1 0.3 0.05
±
±
±
±
±
±
±
±
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Rev. B.3 - Oct., 2005
APM3005NU
Cover Tape Dimensions
Application
Carrier Width
Cover Tape Width
Devices Per Reel
TO- 252
16
13.3
2500
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright ã ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
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