AO3703L [AOS]
P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode; P沟道增强型场效应晶体管，肖特基二极管
| 型号： | AO3703L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| 文件： | 总4页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3703
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
Features
VDS (V) = -20V
The AO3703 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AO3703 is Pb-free (meets ROHS & Sony
259 specifications). AO3703L is a Green Product ordering
option. AO3703 and AO3703L are electrically identical.
ID = -2.7 A (VGS = -10V)
RDS(ON) < 97mΩ (VGS = -4.5V)
RDS(ON) < 130mΩ (VGS = -2.5V)
RDS(ON) < 190mΩ (VGS = -1.8V)
SCHOTTKY
VDS (V) = 20V, IF = 1A, VF<0.5V@0.5A
D
K
SOT-23-5
Top View
D
K
G
S
A
1
2
3
5
4
G
A
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
MOSFET
-20
Schottky
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±8
TA=25°C
TA=70°C
-2.7
ID
A
Continuous Drain Current
A
-2.1
B
IDM
Pulsed Drain Current
-10
VKA
Schottky reverse voltage
20
2
V
A
TA=25°C
TA=70°C
IF
IFM
A
Continuous Forward Current
1
B
Pulsed Forward Current
10
TA=25°C
TA=70°C
1.14
0.72
0.92
0.59
PD
W
Power Dissipation
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
-55 to 150
°C
Parameter: Thermal Characteristics MOSFET
Symbol
Typ
80.3
117
Max
110
150
80
Units
A
t ≤ 10s
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
RθJA
°C/W
A
Steady-State
Steady-State
C
RθJL
58.5
Maximum Junction-to-Lead
Alpha & Omega Semiconductor, Ltd.
AO3703
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-20
V
V
DS=-16V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µΑ
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
V
DS=0V, VGS=±8V
±100
-1
nA
V
VGS(th)
ID(ON)
DS=VGS ID=-250µA
-0.3
-10
-0.6
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-2.7A
A
76
111
101
134
7
97
mΩ
TJ=125°C
135
130
190
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
S
V
GS=-2.5V, ID=-2A
VGS=-1.8V, ID=-1A
VDS=-5V, ID=-2.7A
IS=-1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
4
-0.78
-1
-2
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
540
72
pF
pF
pF
Ω
V
GS=0V, VDS=-10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
49
VGS=0V, VDS=0V, f=1MHz
12
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
6.1
0.6
1.6
10
nC
nC
nC
ns
ns
ns
ns
VGS=-4.5V, VDS=-10V, ID=-2.7A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
V
GS=-4.5V, VDS=-10V, RL=2.8Ω,
GEN=3Ω
Turn-On Rise Time
12
R
tD(off)
tf
Turn-Off DelayTime
44
Turn-Off Fall Time
22
trr
IF=-2.7A, dI/dt=100A/µs
IF=-2.7A, dI/dt=100A/µs
21
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
7.5
nC
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=0.5A
0.39
0.5
0.1
20
V
VR=16V
Irm
Maximum reverse leakage current
mA
VR=16V, TJ=125°C
CT
trr
Junction Capacitance
VR=10V
34
5.2
0.8
pF
IF=1A, dI/dt=100A/µs
IF=1A, dI/dt=100A/µs
10
Schottky Reverse Recovery Time
Schottky Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating. Rev0: July 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICA
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO3703
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6
15
-4.5V
VDS=-5V
-3.0V
-2.5V
-8V
4
2
0
10
5
-2.0V
125°C
VGS=-1.5V
25°C
0
0
1
2
3
4
5
0
0.5
1
1.5
2
-VDS (Volts)
-VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
200
150
100
50
1.8
1.6
1.4
1.2
1
VGS=-2.5V
VGS=-1.8V
VGS=-1.8V
VGS=-4.5V
VGS=-2.5V
VGS=-4.5V
0.8
0
2
4
6
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
200
150
100
50
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
ID=-2.7A
125°C
25°C
125°C
25°C
0
2
4
6
8
0.0
0.2
0.4
0.6
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO3703
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
600
400
200
0
5
4
3
2
1
0
VDS=-10V
ID=-2.7A
Ciss
Crss
Coss
15
0
2
4
6
8
0
5
10
-VDS (Volts)
20
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
20
15
10
5
TJ(Max)=150°C
TJ(Max)=150°C
TA=25°C
TA=25°C
100µs
10µs
1ms
RDS(ON)
limited
0.1s
DC
10ms
1s
10s
1
0.1
0
0.1
10
100
0.001
0.01
0.1
1
10
100
1000
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
0.1
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=110°C/W
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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