AO8804_09 [AOS]

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor; 常见的漏双N沟道增强型场效应晶体管


型号：	AO8804_09
厂家：	ALPHA & OMEGA SEMICONDUCTORS
描述：	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor 常见的漏双N沟道增强型场效应晶体管晶体晶体管场效应晶体管
文件：	总4页 (文件大小：145K)
中文：	中文翻译
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AO8804

Common-Drain Dual N-Channel Enhancement Mode Field

Effect Transistor

General Description

Features

The AO8804 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 1.8V while

retaining a 12V V_GS(MAX)rating. It is ESD protected.

This device is suitable for use as a uni-directional or

bi-directional load switch, facilitated by its common-

drain configuration. Standard Product AO8804 is Pb-

free (meets ROHS & Sony 259 specifications).

V_DS(V) = 20V

I_D= 8A (V_GS= 10V)

R_DS(ON)< 13mΩ (V_GS= 10V)

R_DS(ON)< 14mΩ (V_GS= 4.5V)

R_DS(ON)< 15.5mΩ (V_GS= 3.8V)

R_DS(ON)< 19mΩ (V_GS= 2.5V)

R_DS(ON)< 27mΩ (V_GS= 1.8V)

ESD Rating: 2000V HBM

TSSOP-8

Top View

D1/D2

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±12

T_A=25°C

T_A=70°C

I_D

6.3

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

1.5

P_D

Power Dissipation ^A

1.08

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

120

R_θJL

Alpha & Omega Semiconductor, Ltd.

AO8804

Electrical Characteristics (T_J=25°C unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Units

STATIC PARAMETERS

BV_DSS

Drain-Source Breakdown Voltage

I_D=250µA, V_GS=0V

_DS=16V, V_GS=0V

I_DSS

Zero Gate Voltage Drain Current

µA

T_J=55°C

µA

I_GSS

Gate-Body leakage current

Gate-Source Breakdown Voltage

Gate Threshold Voltage

_DS=0V, V_GS=±10V

_DS=0V, I_G=±250uA

_DS=V_GSI_D=250µA

_GS=4.5V, V_DS=5V

_GS=10V, I_D=8A

BV_GSO

V_GS(th)

I_D(ON)

±12

0.5

0.75

On state drain current

_GS=4.5V, I_D=5A

11.5

13.3

T_J=125°C

R_DS(ON)

Static Drain-Source On-Resistance

mΩ

_GS=3.8V, I_D=5A

15.5

V_GS=2.5V, I_D=4A

15.4

22.2

_GS=1.8V, I_D=3A

_DS=5V, I_D=8A

g_FS

V_SD

I_S

Forward Transconductance

Diode Forward Voltage

I_S=1A,V_GS=0V

0.73

Maximum Body-Diode Continuous Current

2.4

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

1810

232

200

1.6

Ω

V_GS=0V, V_DS=10V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

_GS=0V, V_DS=0V, f=1MHz

SWITCHING PARAMETERS

Q_g

Q_gs

Q_gd

t_D(on)

t_r

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

17.9

1.5

4.7

2.5

7.2

_GS=4.5V, V_DS=10V, I_D=8A

V_GS=10V, V_DS=10V, R_L=1.2Ω,

_GEN=3Ω

t_D(off)

t_f

10.8

20.2

t_rr

I_F=8A, dI/dt=100A/µs

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_rr

A: The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The

value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance

rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R _θJAis the sum of the thermal impedence from junction to lead R_θJLand lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The SOA

curve provides a single pulse rating.

Rev 4: Feb 2009

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AO8804

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

2.5V

4.5V

V_DS=5V

125°C

V_GS=1.5V

25°C

0.5

1.5

_GS(Volts)

Figure 2: Transfer Characteristics

2.5

_DS(Volts)

Fig 1: On-Region Characteristics

1.6

1.4

1.2

V_GS=4.5V

V_GS=2.5V

I_D=5A

V_GS=1.8V

V_GS=10V

V_GS=1.8V

V_GS=2.5V

V_GS=3.8V

V_GS=4.5V

0.8

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

100

125

150

175

I_D(A)

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage

1.0E+01

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

1.0E-05

125°C

I_D=5A

125°C

25°C

0.0

0.2

0.4

0.6

_SD(Volts)

Figure 6: Body-Diode Characteristics

0.8

1.0

1.2

_GS(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

AO8804

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

3000

2500

2000

1500

1000

500

V_DS=10V

I_D=8A

C_iss

C_oss

C_rss

Q_g(nC)

Figure 7: Gate-Charge Characteristics

V_DS(Volts)

Figure 8: Capacitance Characteristics

100.0

10.0

1.0

T_J(Max)=150°C

T_A=25°C

R_DS(ON)

10µs

100µs

1ms

limited

10ms

0.1s

T_J(Max)=150°C

T_A=25°C

10s

0.1

0.001

0.01

0.1

100

1000

0.1

100

Pulse Width (s)

V_DS(Volts)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note E)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

D=T_on/T

_J,PK=T_A+P_DM.Z_θJA.R_θJA

R_θJA=89°C/W

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

P_D

0.1

T_on

Single Pulse

0.001

0.01

0.00001

0.0001

0.01

0.1

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

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