AO8808A [AOS]
Dual N-Channel Enhancement Mode Field Effect Transistor; 双N沟道增强型场效应晶体管型号: | AO8808A |
厂家: | ALPHA & OMEGA SEMICONDUCTORS |
描述: | Dual N-Channel Enhancement Mode Field Effect Transistor |
文件: | 总4页 (文件大小:111K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AO8808A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO8808A uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected.
Standard Product AO8808A is Pb-free (meets ROHS
& Sony 259 specifications). AO8808AL is a Green
Product ordering option. AO8808A and AO8808AL
are electrically identical.
VDS (V) = 20V
ID = 7.9A (VGS = 10V)
RDS(ON) < 14mΩ (VGS = 10V)
RDS(ON) < 15mΩ (VGS = 4.5V)
RDS(ON) < 20mΩ (VGS = 2.5V)
RDS(ON) < 28mΩ (VGS = 1.8V)
ESD Rating: 2000V HBM
TSSOP-8
Top View
D2
S2
D1
1
2
3
4
8
7
6
5
D1
S1
S1
G1
D2
S2
S2
G2
G1
G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±12
7.9
V
A
TA=25°C
TA=70°C
ID
6.3
Pulsed Drain Current B
IDM
30
TA=25°C
TA=70°C
1.4
PD
W
Power Dissipation A
0.9
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
73
Max
90
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
96
125
75
RθJL
63
Alpha & Omega Semiconductor, Ltd.
AO8808A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
20
V
V
DS=16V, VGS=0V
10
25
10
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
µA
V
IGSS
Gate-Body leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
V
V
V
DS=0V, VGS=±10V
DS=0V, IG=±250uA
DS=VGS ID=250µA
BVGSO
VGS(th)
ID(ON)
±12
0.5
30
0.75
1
V
On state drain current
VGS=4.5V, VDS=5V
A
V
GS=10V, ID=8A
GS=4.5V, ID=5A
10.6
14.2
11.7
15.2
21.5
36
14
18
15
20
28
mΩ
TJ=125°C
mΩ
mΩ
mΩ
S
RDS(ON)
Static Drain-Source On-Resistance
V
VGS=2.5V, ID=4A
V
V
GS=1.8V, ID=3A
DS=5V, ID=8A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
IS=1A,VGS=0V
0.6
1
V
Maximum Body-Diode Continuous Current
2.4
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1810
232
200
1.6
pF
pF
pF
Ω
VGS=0V, VDS=10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
V
GS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
17.9
1.5
4.7
2.5
7.2
49
nC
nC
nC
ns
ns
ns
ns
GS=4.5V, VDS=10V, ID=8A
VGS=10V, VDS=10V, RL=1.2Ω,
GEN=3Ω
R
tD(off)
tf
10.8
20.2
8
trr
IF=8A, dI/dt=100A/µs
IF=8A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 1: Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO8808A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
35
30
25
20
15
10
5
30
25
20
15
10
5
10
2.5V
4.5V
VDS=5V
2V
125°C
VGS=1.5V
25°C
0
0
0
1
2
3
4
5
0
0.5
1
V
1.5
GS(Volts)
2
2.5
V
DS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
30
25
20
15
10
5
1.6
1.4
1.2
1
VGS=4.5V
ID=5A
VGS=1.8V
VGS=2.5V
VGS=10V
VGS=1.8V
VGS=2.5V
VGS=4.5V
VGS=10V
0.8
0
5
10
D (A)
15
20
0
25
50
75
100
125
150
175
I
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
40
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
35
30
25
20
15
10
5
125°C
ID=5A
125°C
25°C
25°C
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO8808A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
5
4
3
2
1
0
VDS=10V
ID=8A
2500
2000
1500
1000
500
Ciss
Coss
Crss
0
0
4
8
12
16
20
0
5
10
15
20
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
30
20
10
0
100µs
limited
1ms
10ms
0.1s
1s
TJ(Max)=150°C
TA=25°C
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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