AOD425_11 [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AOD425_11 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD425
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD425 uses advanced trench technology to
provide excellent RDS(ON) and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use
as a load switch or in PWM applications. The device is
ESD protected.
VDS (V) = -30V
ID = -50A (VGS = -10V)
RDS(ON) < 17mΩ (VGS = -10V)
RDS(ON) < 35mΩ (VGS = -5V)
-RoHS Compliant
-Halogen Free*
ESD Protected!
100% Rg Tested!
TO252
DPAK
D
Top View
Bottom View
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
Continuous Drain
Current F
VGS
±25
-50
V
A
TC=25°C
TC=100°C
ID
-36
Pulsed Drain Current C
IDM
-70
T
T
A=25°C
A=70°C
-9
Continuous Drain
Current
IDSM
A
-7
TC=25°C
TC=100°C
TA=25°C
TA=70°C
71
PD
W
Power Dissipation B
36
2.5
PDSM
W
°C
Power Dissipation A
1.6
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
16
Max
20
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Steady-State
Steady-State
41
50
RθJC
1.7
2.1
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD425
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=-250uA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
V
DS=-30V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS= ±25V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±10
-3.5
uA
V
VGS(th)
ID(ON)
-1.5
-70
-2.45
A
V
GS=-10V, ID=-20A
13.5
18.5
27
17
24
35
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
mΩ
VGS=-5V, ID=-20A
VDS=-5V, ID=-20A
IS=-1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
27
S
V
A
-0.72
-1
Maximum Body-Diode Continuous Current
-50
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1760
360
255
6.4
2200
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
8
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
30
11
7
38
nC
nC
nC
nC
ns
VGS=-10V, VDS=-15V, ID=-20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
8
11.5
8
V
GS=-10V, VDS=-15V, RL=0.75Ω,
ns
RGEN=3Ω
tD(off)
tf
35
18.5
24
16
ns
ns
trr
IF=-20A, dI/dt=100A/µs
IF=-20A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
30
ns
Qrr
nC
A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev3: May. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD425
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
60
50
40
30
20
10
0
25
20
15
10
5
VDS=-5V
125°C
-10V
-5V
-4.5V
25°C
VGS=-4V
4
0
0
1
2
3
5
2
2.5
3
3.5
4
4.5
5
VDS (Volts)
VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
40.0
30.0
20.0
10.0
0.0
1.8
1.6
1.4
1.2
1
ID=-20A
VGS=-10V
VGS=-5V
VGS=-5V
VGS=-10V
0.8
0
5
10
15
20
25
0
50
100
150
200
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction Temperature
50
40
30
20
10
0
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
ID=-20A
125°C
125°C
25°C
1.0E-03
25°C
1.0E-04
1.0E-05
0
5
10
15
20
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD425
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500
10
8
VDS=-15V
ID=-20A
Ciss
2000
1500
1000
500
0
6
4
Coss
2
Crss
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
10
400
TJ(Max)=175°C
TC=25°C
320
240
160
80
10µs
RDS(ON)
limited
100µs
DC
1ms
1
10ms
TJ(Max)=175°C
TC=25°C
0.1
0.01
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
Pulse Width (s)
0.1
1
10
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=2.1°C/W
PD
0.1
0.01
Ton
T
Single Pulse
0.0001
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD425
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
100
80
60
40
20
0
50
40
30
20
10
0
0
25
50
75
100
125
150
175
0
25
50
75
TCASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
10000
1000
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=50°C/W
0.1
PD
0.01
0.001
Single Pulse
0.01
Ton
T
0.00001
0.0001
0.001
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD425
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
f
td
(
td(on)
t
r
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
trr
Vds -
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Ig
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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