AOD436 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOD436 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD436
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD436 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
Standard Product AOD436 is Pb-free (meets ROHS
& Sony 259 specifications). AOD436L is a Green
Product ordering option. AOD436 and AOD436L are
electrically identical.
VDS (V) = 30V
ID = 60A (VGS = 10V)
R
DS(ON) < 7.5mΩ (VGS = 10V)
DS(ON) < 13mΩ (VGS = 4.5V)
R
TO-252
D-PAK
D
S
Top View
Drain Connected
to Tab
G
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current B,G
±20
60
V
A
TC=25°C G
TC=100°C B
ID
43
IDM
IAR
EAR
Pulsed Drain Current
Avalanche Current C
130
30
A
Repetitive avalanche energy L=0.1mH C
113
50
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
25
TA=25°C
2.5
PDSM
W
Power Dissipation A
TA=70°C
1.6
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
Symbol
Typ
14.2
39
Max
20
50
3
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
RθJC
2
Alpha & Omega Semiconductor, Ltd.
AOD436
Electrical Characteristics (T=25°C unless otherwise noted)
J
Parameter
Conditions
Symbol
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
100
3
nA
V
VGS(th)
ID(ON)
1
1.8
85
A
VGS=10V, ID=20A
5.4
8.1
9.8
88
7.5
9.7
13
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
V
GS=4.5V, ID=20A
DS=5V, ID=20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
S
V
A
IS=1A,VGS=0V
0.71
1
Maximum Body-Diode Continuous Current
85
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1520 1825
306
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=100kHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
214
VGS=0V, VDS=0V, f=1MHz
0.47
0.7
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
31.9
16.2
5
39
20
nC
nC
nC
nC
ns
VGS=4.5V, VDS=15V, ID=20A
Qgd
9.6
tD(on)
tr
tD(off)
tf
7
VGS=10V, VDS=15V, RL=0.75Ω,
11.6
24.2
7.7
ns
RGEN=3Ω
ns
ns
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
trr
23.8
15.7
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
30
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
Rev 4 : July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
60
50
40
30
20
10
0
10V
4.0V
VDS=5V
20
10
0
3.5V
125°C
25°C
VGS=3V
0
1
2
3
4
5
1.5
2
2.5
3
3.5
4
4.5
VDS (Volts)
V
GS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
1.8
1.6
1.4
1.2
1
12
11
10
9
ID=20A
VGS=10V
VGS=4.5V
8
VGS=4.5V
7
VGS=10V
6
5
4
0.8
0
5
10
15
20
25
30
0
25
50
75
100
125
150
175
I
D (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
16
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
ID=20A
12
8
125°C
25°C
25°C
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2.00E+00 4.00E+00 6.00E+00 8.00E+00 1.00E+01
V
SD (Volts)
V
GS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOD436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2400
VDS=15V
ID=20A
2000
1600
1200
800
400
0
8
6
4
2
0
Ciss
Coss
Crss
0
5
10
15
20
25
30
35
0
5
10
15
VDS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
10
100
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
10µs
100µs
80
60
40
20
0
1ms
10ms
0.1s
1s
10s
TJ(Max)=150°C
TA=25°C
1
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
V
DS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
0.01
PD
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOD436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
60
40
20
TA=25°C
L⋅ ID
tA
=
BV −VDD
0
0.00001
0.0001
Time in avalanche, t A (s)
Figure 12: Single Pulse Avalanche capability
0.001
0.01
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
100
80
60
40
20
0
0
25
50
75
CASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
T
Alpha & Omega Semiconductor, Ltd.
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