AOD4454 [AOS]
150V N-Channel MOSFET; 150V N沟道MOSFET
| 型号： | AOD4454 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 150V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：297K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD4454
150V N-Channel MOSFET
General Description
Product Summary
VDS
150V
The AOD4454 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON).This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=7V)
20A
< 94mΩ
< 110mΩ
100% UIS Tested
100% Rg Tested
TO252
DPAK
D
Top View
Bottom View
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
150
±20
20
V
V
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
ID
TC=100°C
A
14
IDM
40
TA=25°C
TA=70°C
3
Continuous Drain
Current
IDSM
A
2.5
Avalanche Current C
IAS, IAR
5
A
Avalanche energy L=0.1mH C
EAS, EAR
1.3
mJ
TC=25°C
Power Dissipation B
TC=100°C
100
50
PD
W
TA=25°C
2.5
PDSM
W
°C
Power Dissipation A
1.6
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
16
Max
20
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
41
50
RθJC
1.2
1.5
Rev 0: February 2011
www.aosmd.com
Page 1 of 6
AOD4454
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
150
V
VDS=150V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
V
DS=0V, VGS= ±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
4.6
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=10A
3.4
40
4
A
75.5
151
84
94
188
110
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=7V, ID=10A
mΩ
S
VDS=5V, ID=10A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
20
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current G
0.72
1
V
46
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
655
50
820
70
985
90
pF
pF
pF
Ω
VGS=0V, VDS=75V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
13
22
31
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=75V, ID=10A
VGS=10V, VDS=75V, RL=7.5Ω,
0.7
1.4
2.1
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
10
15
4
20
nC
nC
nC
ns
ns
ns
ns
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
4.4
10.5
5.5
14.5
3
RGEN=3Ω
tD(off)
tf
trr
IF=10A, dI/dt=500A/µs
IF=10A, dI/dt=500A/µs
20
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
32.5
230
45
ns
Qrr
160
nC
300
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: February 2011
www.aosmd.com
Page 2 of 6
AOD4454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
15
10
5
30
10V
VDS=5V
7V
25
20
6.5V
15
6V
10
125°C
5
25°C
VGS=5.5V
0
0
0
1
2
3
4
5
2
3
4
5
6
7
8
V
DS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
110
100
90
2.8
2.6
2.4
2.2
2
VGS=10V
ID=10A
VGS=7V
1.8
1.6
1.4
1.2
1
80
=7V
VGS
70
ID=10A
VGS=10V
60
0.8
0
5
10
15
20
0
25
50
75
100 125 150 175 200
I
D (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
(Note E)
190
170
150
130
110
90
1.0E+02
ID=10A
125°C
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
125°C
25°C
25°C
70
50
4
5
6
7
8
9
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS (Volts)
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
Rev 0: February 2011
www.aosmd.com
Page 3 of 6
AOD4454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
VDS=75V
ID=10A
1000
800
600
400
200
0
8
Ciss
6
4
Coss
2
Crss
0
0
3
6
9
12
15
0
15 30 45 60 75 90 105 120 135 150
DS (Volts)
Qg (nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
500
400
300
200
100
0
10µs
100µs
TJ(Max)=175°C
RDS(ON)
limited
TC=25°C
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
1
0.1
PD
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: February 2011
www.aosmd.com
Page 4 of 6
AOD4454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
120
TA=25°C
TA=100°C
100
80
TA=150°C
60
40
TA=125°C
20
1
0
1
10
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
100
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note F)
100
25
20
15
10
5
TA=25°C
80
60
40
20
0
0
0
25
50
75
100
125
150
175
TCASE (°C)
0.00001
0.001
0.1
Pulse Width (s)
10
1000
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK=TA+PDM.ZθJA.RθJA
θJA=50°C/W
R
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: February 2011
www.aosmd.com
Page 5 of 6
AOD4454
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 0: February 2011
www.aosmd.com
Page 6 of 6
相关型号：
©2020 ICPDF网 联系我们和版权申明