AOD456A [AOS]
Plastic Encapsulated Device; 塑料封装的器件
| 型号： | AOD456A |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Plastic Encapsulated Device |
| 文件： | 总5页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOS Semiconductor
Product Reliability Report
AOD456A/AOD456AL, rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
495 Mercury Drive
Sunnyvale, CA 94085
U.S.
Tel: (408) 830-9742
www.aosmd.com
Oct 12, 2006
1
This AOS product reliability report summarizes the qualification result for AOD456A. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AOD456A passes AOS quality and
reliability requirements. The released product will be categorized by the process family and be
monitored on a quarterly basis for continuously improving the product quality.
Table of Contents:
I.
Product Description
II.
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
III.
IV.
V.
Quality Assurance Information
I. Product Description:
The AOD456A uses advanced trench technology and design to provide excellent RDS(ON) with low
gate charge. This device is suitable for use in PWM, load switching and general purpose
applications. Standard product AOD456Ais Pb-free (meets ROHS & Sony 259 specifications).
AOD456AL is a Green Product ordering option. AOD456A and AOD456AL are electrically
identical.
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
25
±20
50
V
V
VGS
TA=25°C
Continuous Drain
Current
A
ID
TA=100°C
50
Pulsed Drain Current
Avalanche Current
IDM
IAR
150
30
A
TA=25°C
TA=100°C
TA=25°C
TA=70°C
50
PD
W
Power Dissipation
Power Dissipation
25
3
PDSM
W
2.1
Junction and Storage
Temperature Range
TJ, TSTG
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-
Ambient
Maximum Junction-to-
Ambient
Symbol
Typ
15
Max
20
50
3
Units
°C/W
°C/W
°C/W
T ≤ 10s
RθJA
Steady-
State
Steady-
State
41
Maximum Junction-to-Lead
RθJL
2.1
2
II. Die / Package Information:
AOD456A
AOD456AL (Green Compound)
Process
Standard sub-micron
Standard sub-micron
Low voltage N channel process Low voltage N channel process
Package Type
Lead Frame
Die Attach
3 leads TO252
Copper with Ni pad
Soft solder
3 leads TO252
Copper with Ni pad
Soft solder
Bond wire
Mold Material
Al 5&12mils
Soft solder
Al 5&12mils
Soft solder
Filler % (Spherical/Flake)
Flammability Rating
Backside Metallization
Moisture Level
90/10
UL-94 V-0
Ti / Ni / Ag
Up to Level 1 *
100/0
UL-94 V-0
Ti / Ni / Ag
Up to Level 1*
Note * based on info provided by assembler and mold compound supplier
III. Result of Reliability Stress for AOD456A (Standard) & AOD456AL (Green)
Test Item
Test Condition
Time
Point
Lot Attribution
Total
Sample
size
Number
of
Failures
Standard: 1hr PCT+3
cycle reflow@260°c
Green: 168hr 85°c
/85%RH +3 cycle
reflow@260°c
Standard: 26 lots
Green: 3 lots
4675pcs
Solder
Reflow
Precondition
0hr
0
168 / 500
hrs
4 lots
328pcs
0
0
HTGB
HTRB
Temp = 150°c ,
Vgs=100% of Vgsmax
77+5 pcs /
lot
1000 hrs
(Note A*)
4 lots
168 / 500
hrs
328pcs
Temp = 150°c ,
Vds=80% of Vdsmax
77+5 pcs /
lot
1000 hrs
100 hrs
(Note A*)
Standard : 26 lots
Green: 3 lots
1595pcs
0
0
0
HAST
130 +/- 2°c , 85%RH,
33.3 psi, Vgs = 80% of
Vgs max
50+5 pcs /
lot
1540pcs
(Note B**)
Standard : 25 lots
Green: 3 lots
96 hrs
Pressure Pot
121°c , 29.7psi,
100%RH
50+5 pcs /
lot
1540pcs
(Note B**)
Standard : 25 lots
Green: 3 lots
250 / 500
cycles
Temperature
Cycle
-65°c to 150°c ,
air to air
50+5 pcs /
lot
(Note B**)
3
III. Result of Reliability Stress for AOD456A (Standard) & AOD456AL (Green)
Continues
DPA
Internal Vision
Cross-section
X-ray
NA
5
5
5
5
5
5
0
NA
5
5
0
0
CSAM
Room Temp
150°c bake
150°c bake
0hr
250hr
500hr
40
40
40
40 wires
40 wires
40 wires
Bond Integrity
5 sec
0hr
15
10
15 leads
10
0
0
Solderability
Die shear
230°c
150°c
Note A: The HTGB and HTRB reliability data presents total of available AOD456A and
AOD456AL burn-in data up to the published date.
Note B: The pressure pot, temperature cycle and HAST reliability data for AOD456A and
AOD456AL comes from the AOS generic package qualification data.
IV. Reliability Evaluation
FIT rate (per billion): 32
MTTF = 3567 years
In general, 500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of
lifetime at 55 deg C operating conditions (by applying the Arrhenius equation with an activation
energy of 0.7eV and 60% of upper confidence level on the failure rate calculation). AOS reliability
group also routinely monitors the product reliability up to 1000 hr at and performs the necessary
failure analysis on the units failed for reliability test(s).
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size of the selected product (AOD456A). Failure Rate Determination is based on JEDEC
Standard JESD 85. FIT means one failure per billion hours.
Failure Rate = Chi2 x 109 / [2 (N) (H) (Af)] = 1.83 x 109 / [2 (4×164) (168) (258)] = 32
MTTF = 109 / FIT = 3.12 x 107hrs = 3567years
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
55 deg C
70 deg C
85 deg C
32
100 deg C
13
115 deg C
5.64
130 deg C
2.59
150 deg C
1
Af
258
87
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K
4
V. Quality Assurance Information
Acceptable Quality Level for outgoing inspection: 0.1% for electrical and visual.
Guaranteed Outgoing Defect Rate: < 25 ppm
Quality Sample Plan: conform to Mil-Std-105D
5
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