AOD456_08 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOD456_08 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD456
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
TheꢀAOD456ꢀusesꢀadvancedꢀtrenchꢀtechnologyꢀand
designꢀtoꢀprovideꢀexcellentꢀRDS(ON)ꢀwithꢀlowꢀgate
charge.ꢀThisꢀdeviceꢀisꢀsuitableꢀforꢀuseꢀinꢀPWM,ꢀload
switchingꢀandꢀgeneralꢀpurposeꢀapplications.
VDSꢀ(V)ꢀ=ꢀ25V
IDꢀ=ꢀ50Aꢀ(VGSꢀ=ꢀ10V)
R
DS(ON)ꢀ<6ꢀmΩꢀ(VGSꢀ=ꢀ10V)
RDS(ON)ꢀ<10ꢀmΩꢀ(VGSꢀ=ꢀ4.5V)
ꢀꢀꢀꢀꢀꢁRoHSꢀCompliant
ꢀꢀꢀꢀꢀꢁHalogenꢀFree*
ꢀꢀꢀꢀꢀꢀꢀꢀ
100% UIS Tested!
100% Rg Tested!
TO-252
D-PAK
Bottom View
Top View
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
DrainꢁSourceꢀVoltage
VDS
25
V
GateꢁSourceꢀVoltage
VGS
±20
V
A
TC=25°C
50
ContinuousꢀDrain
CurrentꢀG
TC=100°C
ID
40
PulsedꢀDrainꢀCurrentꢀC
AvalancheꢀCurrentꢀC
RepetitiveꢀavalancheꢀenergyꢀL=0.1mHꢀC
IDM
IAR
EAR
150
30
A
45
mJ
TC=25°C
PowerꢀDissipationꢀB
TC=100°C
50
PD
W
25
3
TA=25°C
PDSM
W
PowerꢀDissipationꢀA
2.1
TA=70°C
JunctionꢀandꢀStorageꢀTemperatureꢀRange
TJ,ꢀTSTG
ꢁ55ꢀtoꢀ175
°C
Thermal Characteristics
Parameter
Symbol
Typ
15
Max
20
50
3
Units
°C/W
°C/W
°C/W
MaximumꢀJunctionꢁtoꢁAmbientꢀA
tꢀꢀ≤ꢀ10s
RθJA
MaximumꢀJunctionꢁtoꢁAmbientꢀA
MaximumꢀJunctionꢁtoꢁCaseꢀB
SteadyꢁState
SteadyꢁState
41
RθJC
2.1
Alpha & Omega Semiconductor, Ltd.
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AOD456
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250uA,ꢀVGS=0V
VDS=20V,ꢀVGS=0V
BVDSS
DrainꢁSourceꢀBreakdownꢀVoltage
25
V
1
5
IDSS
ZeroꢀGateꢀVoltageꢀDrainꢀCurrent
µA
TJ=55°C
VDS=0V,ꢀVGS=±20V
VDS=VGS,ꢀꢀID=250µA
VGS=10V,ꢀVDS=5V
VGS=10V,ꢀID=30A
IGSS
GateꢁBodyꢀleakageꢀcurrent
GateꢀThresholdꢀVoltage
Onꢀstateꢀdrainꢀcurrent
100
3
nA
V
VGS(th)
ID(ON)
1
1.74
100
A
5
7.3
8
6
RDS(ON)
StaticꢀDrainꢁSourceꢀOnꢁResistance
TJ=125°C
mΩ
VGS=4.5V,ꢀID=20A
VDS=5V,ꢀID=20A
IS=1A,ꢀVGS=0V
10
gFS
VSD
IS
ForwardꢀTransconductance
DiodeꢀForwardꢀVoltage
45
S
V
A
0.74
1
MaximumꢀBodyꢁDiodeꢀContinuousꢀCurrent
50
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
InputꢀCapacitance
1850
472
2220
1.5
pF
pF
pF
Ω
VGS=0V,ꢀVDS=12.5V,ꢀf=1MHz
OutputꢀCapacitance
ReverseꢀTransferꢀCapacitance
Gateꢀresistance
275
VGS=0V,ꢀVDS=0V,ꢀf=1MHz
0.86
SWITCHING PARAMETERS
Qg(10V) TotalꢀGateꢀCharge
Qg(4.5V) TotalꢀGateꢀCharge
31.7
15.7
5.8
38
19
nC
nC
nC
nC
ns
VGS=10V,ꢀVDS=12.5V,ꢀID=20A
Qgs
Qgd
tD(on)
tr
GateꢀSourceꢀCharge
GateꢀDrainꢀCharge
8.2
TurnꢁOnꢀDelayTime
7.5
VGS=10V,ꢀVDS=12.5V,
TurnꢁOnꢀRiseꢀTime
14
ns
RL=0.625Ω,ꢀRGEN=3Ω
tD(off)
tf
TurnꢁOffꢀDelayTime
30
ns
TurnꢁOffꢀFallꢀTime
11.5
30.9
20.3
ns
trr
IF=20A,ꢀdI/dt=100A/µs
IF=20A,ꢀdI/dt=100A/µs
BodyꢀDiodeꢀReverseꢀRecoveryꢀTime
BodyꢀDiodeꢀReverseꢀRecoveryꢀCharge
37
ns
Qrr
nC
ꢀ2
A:ꢀTheꢀvalueꢀofꢀRꢀθJAꢀisꢀmeasuredꢀwithꢀtheꢀdeviceꢀmountedꢀonꢀ1in ꢀFRꢁ4ꢀboardꢀwithꢀ2oz.ꢀCopper,ꢀinꢀaꢀstillꢀairꢀenvironmentꢀwithꢀTꢀAꢀ=25°C.ꢀTheꢀPower
dissipationꢀPDSMꢀisꢀbasedꢀonꢀRꢀθJAꢀandꢀtheꢀmaximumꢀallowedꢀjunctionꢀtemperatureꢀofꢀ150°C.ꢀTheꢀvalueꢀinꢀanyꢀꢀgivenꢀapplicationꢀdependsꢀonꢀthe
user'sꢀspecificꢀboardꢀdesign,ꢀandꢀtheꢀmaximumꢀtemperatureꢀofꢀ175°CꢀmayꢀbeꢀusedꢀifꢀtheꢀPCBꢀallowsꢀit.
B.ꢀTheꢀpowerꢀdissipationꢀPDꢀisꢀbasedꢀonꢀTJ(MAX)=175°C,ꢀusingꢀjunctionꢁtoꢁcaseꢀthermalꢀresistance,ꢀandꢀisꢀmoreꢀusefulꢀinꢀsettingꢀtheꢀupperꢀdissipation
limitꢀforꢀcasesꢀwhereꢀadditionalꢀheatsinkingꢀisꢀused.
C:ꢀRepetitiveꢀrating,ꢀpulseꢀwidthꢀlimitedꢀbyꢀjunctionꢀtemperatureꢀTJ(MAX)=175°C.
D.ꢀTheꢀRꢀθJAꢀisꢀtheꢀsumꢀofꢀtheꢀthermalꢀimpedenceꢀfromꢀjunctionꢀtoꢀcaseꢀRꢀθJCꢀandꢀcaseꢀtoꢀambient.
E.ꢀTheꢀstaticꢀcharacteristicsꢀinꢀFiguresꢀ1ꢀtoꢀ6ꢀareꢀobtainedꢀusingꢀ<300ꢀµsꢀpulses,ꢀdutyꢀcycleꢀ0.5%ꢀmax.
F.ꢀTheseꢀcurvesꢀareꢀbasedꢀonꢀtheꢀjunctionꢁtoꢁcaseꢀthermalꢀimpedenceꢀwhichꢀisꢀmeasuredꢀwithꢀtheꢀdeviceꢀmountedꢀtoꢀaꢀlargeꢀheatsink,ꢀassumingꢀa
maximumꢀjunctionꢀtemperatureꢀofꢀTJ(MAX)=175°C.
G.ꢀTheꢀmaximumꢀcurrentꢀratingꢀisꢀlimitedꢀbyꢀbondꢁwires.
H.ꢀTheseꢀtestsꢀareꢀperformedꢀwithꢀtheꢀdeviceꢀmountedꢀonꢀ1ꢀinꢀꢀ2ꢀFRꢁ4ꢀboardꢀwithꢀ2oz.ꢀCopper,ꢀinꢀaꢀstillꢀairꢀenvironmentꢀwithꢀT =25°C.ꢀTheꢀSOA
A
curveꢀprovidesꢀaꢀsingleꢀpulseꢀrating.
*Thisꢀdeviceꢀisꢀguaranteedꢀgreenꢀafterꢀdataꢀcodeꢀ8X11ꢀ(Sepꢀ1STꢀ2008).
Rev4:ꢀSpeꢀ2008
THISꢀPRODUCTꢀHASꢀBEENꢀDESIGNEDꢀANDꢀQUALIFIEDꢀFORꢀTHEꢀCONSUMERꢀMARKET.ꢀAPPLICATIONSꢀORꢀUSESꢀASꢀCRITICALꢀ
COMPONENTSꢀINꢀLIFEꢀSUPPORTꢀDEVICESꢀORꢀSYSTEMSꢀAREꢀNOTꢀAUTHORIZED.ꢀAOSꢀDOESꢀNOTꢀASSUMEꢀANYꢀLIABILITYꢀARISING
OUTꢀOFꢀSUCHꢀAPPLICATIONSꢀORꢀUSESꢀOFꢀITSꢀPRODUCTS.ꢀꢀAOSꢀRESERVESꢀTHEꢀRIGHTꢀTOꢀIMPROVEꢀPRODUCTꢀDESIGN,
FUNCTIONSꢀANDꢀRELIABILITYꢀWITHOUTꢀNOTICE.ꢀ
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD456
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
60
50
40
30
20
10
0
10V
6V
VDS=5V
5V
4.5V
4.0V
25°C
125°C
VGS=3.5
0
1
2
3
4
5
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
10
8
1.8
1.6
1.4
1.2
1
VGS=10V,ꢀ20A
VGS=4.5V
VGS=10V
6
VGS=4.5V,ꢀ20A
4
2
0.8
0
10
20
30
40
50
60
0
25
50
75
100
125
150
175
ID (A)
Temperature(°C)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
12
100
10
ID=20A
125°C
125°C
10
1
0.1
8
6
4
0.01
25°C
0.001
0.0001
0.00001
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
3
4
5
6
7
8
9
10
V
SD (Volts)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD456
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
10
8
VDS=12.5V
ID=20A
2500
2000
1500
1000
500
Ciss
6
4
Coss
2
Crss
0
0
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: CapacitanceCharacteristics
1000
200
160
120
80
TJ(Max)=175°C,ꢀTC=25°C
10µs
TJ(Max)=175°C
TC=25°C
100 RDS(ON)
limited
100µs
10
1
DC
1ms
40
0
0.1
0.1
0.0001
0.001
0.01
0.1
1
10
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)
10
Inꢀdescendingꢀorder
D=0.5,ꢀ0.3,ꢀ0.1,ꢀ0.05,ꢀ0.02,ꢀ0.01,ꢀsingleꢀpulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
1
0.1
PD
Ton
T
SingleꢀPulse
0.0001
0.01
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
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AOD456
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
60
50
40
30
20
L ID
tA
=
BV −VDD
TA=25°C
10
0.000001
0.00001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.0001
0.001
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
50
40
30
20
10
0
60
50
40
30
20
10
0
TA=25°C
0.01
0.1
1
10
100
1000
0
25
50
75
100
125
150
175
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note B)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
Inꢀdescendingꢀorder
D=0.5,ꢀ0.3,ꢀ0.1,ꢀ0.05,ꢀ0.02,ꢀ0.01,ꢀsingleꢀpulse
0.1
0.01
D=Ton/T
PD
TJ,PK=TA+PDM.ZθJA.RθJA
SingleꢀPulse
RθJA=50°C/W
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD456
GateꢀChargeꢀTestꢀCircuitꢀ&ꢀWaveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
ꢁ
ꢁ
DUT
Vgs
Ig
Charge
ResistiveꢀSwitchingꢀTestꢀCircuitꢀ&ꢀWaveforms
RL
Vds
Vds
90%
+
DUT
Vdd
Vgs
VDC
Rg
ꢁ
10%
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
UnclampedꢀInductiveꢀSwitchingꢀ(UIS)ꢀTestꢀCircuitꢀ&ꢀWaveforms
L
EAꢀꢀRꢀ=ꢀ1/2ꢀLIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
ꢁ
DUT
Vgs
Vgs
DiodeꢀRecoveryꢀTestꢀCircuitꢀ&ꢀWaveforms
Qꢀꢀꢀ=ꢀꢁꢀꢀꢀIdt
Vdsꢀ+
Vdsꢀꢁ
Ig
rr
DUT
Vgs
Isd
trr
L
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
ꢁ
Vds
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