AOD466 [AOS]

N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管


型号：	AOD466
厂家：	ALPHA & OMEGA SEMICONDUCTORS
描述：	N-Channel Enhancement Mode Field Effect Transistor N沟道增强型网络场效晶体管晶体晶体管
文件：	总5页 (文件大小：126K)
中文：	中文翻译
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AOD466

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD466 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate

charge. This device is suitable for use in PWM, load

switching and general purpose applications. Standard

Product AOD466 is Pb-free (meets ROHS & Sony

259 specifications). AOD466L is a Green Product

ordering option. AOD466 and AOD466L are

electrically identical.

V_DS(V) = 25V

I_D= 30A (V_GS= 10V)

R_DS(ON)< 14 mΩ (V_GS= 10V)

R_DS(ON)< 24 mΩ (V_GS= 4.5V)

TO-252

D-PAK

Top View

Drain Connected to

Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^G

±20

T_C=25°C

T_C=100°C

I_D

Pulsed Drain Current ^C

Avalanche Current ^C

Repetitive avalanche energy 0.1mH ^C

I_DM

I_AR

E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.5

P_DSM

Power Dissipation ^A

T_A=70°C

1.6

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^B

Steady-State

R_θJC

3.6

Alpha & Omega Semiconductor, Ltd.

AOD466

Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

STATIC PARAMETERS

BV_DSS

Drain-Source Breakdown Voltage

I_D=250uA, V_GS=0V

V_DS=20V, V_GS=0V

I_DSS

Zero Gate Voltage Drain Current

µA

T_J=55°C

I_GSS

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

V_DS=0V, V_GS=±20V

V_DS=V_GS, I_D=250µA

V_GS=10V, V_DS=5V

100

2.5

V_GS(th)

I_D(ON)

1.8

V_GS=10V, I_D=30A

11.1

15.5

mΩ

R_DS(ON)

T_J=125°C

Static Drain-Source On-Resistance

V_GS=4.5V, I_D=20A

g_FS

V_SD

I_S

Forward Transconductance

Diode Forward Voltage

_DS=5V, I_D=30A

I_S=1A, V_GS=0V

0.74

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

830

224

127

0.93

1000

1.5

Ω

_GS=0V, V_DS=12.5V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

V_GS=0V, V_DS=0V, f=1MHz

SWITCHING PARAMETERS

Q_g(10V)

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

15.3

7.4

2.7

4.3

Q_g(4.5V)

_GS=10V, V_DS=12.5V, I_D=30A

Q_gs

Q_gd

t_D(on)

t_r

V_GS=10V, V_DS=12.5V,

11.7

R_L=0.42Ω, R_GEN=3Ω

t_D(off)

t_f

t_rr

I_F=30A, dI/dt=100A/µs

23.5

12.8

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_rr

A: The value of R _θJAis measured with the device mounted on 1in ²FR-4 board with 2oz. Copper, in a still air environment with T _A=25°C. The

Power dissipation P_DSMis based on R _θJAand the maximum allowed junction temperature of 150°C. The value in any given application depends on

the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation P_Dis based on T_J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature T _J(MAX)=175°C.

D. The R _θJAis the sum of the thermal impedence from junction to case R _θJCand case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of T _J(MAX)=175°C.

G. The maximum current rating is limited by bond-wires.

H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T _A=25°C. The SOA

curve provides a single pulse rating.

Rev 0 : Septemeber 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AOD466

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

V_DS=5V

10V

4.5V

125°C

25°C

V_GS=3V

2.5

3.5

_GS(Volts)

4.5

V_DS(Volts)

Figure 2: Transfer Characteristics

Fig 1: On-Region Characteristics

1.6

V_GS=10V

I_D=30A

V_GS=4.5V

1.4

1.2

V_GS=4.5V

I_D=20A

V_GS=10V

0.8

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

100

125

150

_D(A)

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage

1.0E+02

1.0E+01

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

1.0E-05

I_D=30A

125°C

25°C

0.0

0.2

0.4

V_SD(Volts)

Figure 6: Body-Diode Characteristics

0.6

0.8

1.0

2.00

4.00

6.00

V_GS(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

8.00

10.00

Alpha & Omega Semiconductor, Ltd.

AOD466

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1400

1200

1000

800

600

400

200

V_DS=12.5V

I_D=30A

C_iss

C_oss

C_rss

V_DS(Volts)

Q_g(nC)

Figure 7: Gate-Charge Characteristics

Figure 8: Capacitance Characteristics

100

200

160

120

R_DS(ON)

limited

10µs

T_J(Max)=175°C

T_A=25°C

100µs

1ms

T_J(Max)=175°C, T_A=25°C

0.1

0.0001

0.001

0.01

0.1

100

V_DS(Volts)

Figure 9: Maximum Forward Biased

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Case (Note F)

Safe Operating Area (Note E)

In descending order

D=T_on/T

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

T_J,PK=T_C+P_DM.Z_θJC.R_θJC

R_θJC=5°C/W

0.1

P_D

T_on

0.01

Single Pulse

0.00001

0.0001

0.001

0.01

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

0.1

100

Alpha & Omega Semiconductor, Ltd.

AOD466

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

L ⋅ I_D

t_A

BV −V_DD

T_A=25°C

0.00001

0.0001

Time in avalanche, t_A(s)

Figure 12: Single Pulse Avalanche capability

0.001

100

125

150

175

_CASE(°C)

Figure 13: Power De-rating (Note B)

T_A=25°C

0.0001 0.001 0.01

0.1

100 1000

100

125

150

175

Pulse Width (s)

T_CASE(°C)

Figure 15: Single Pulse Power Rating Junction-to-

Ambient (Note H)

Figure 14: Current De-rating (Note B)

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

D=T_on/T

P_D

T_J,PK=T_A+P_DM.Z_θJA.R_θJA

R_θJA=50°C/W

0.01

Single Pulse

T_on

0.001

0.00001

0.0001

0.001

0.01

0.1

100

1000

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Alpha & Omega Semiconductor, Ltd.

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