AOE6930 [AOS]
Power Field-Effect Transistor;
| 型号： | AOE6930 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总10页 (文件大小：537K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOE6930
30V Dual Asymmetric N-Channel AlphaMOS
General Description
Product Summary
Q1
Q2
• Bottom Source Technology
• Very Low RDS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
VDS
30V
22A
30V
85A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 4.3mΩ < 0.83mΩ
< 7.0mΩ < 1.05mΩ
RDS(ON) (at VGS=4.5V)
Applications
100% UIS Tested
100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Non-Isolated DC/DC Converters in Telecom and Industrial
DFN 5X6E
Top View
Bottom View
Bottom View
Top View
G2
8
1
2
3
4
D2/S1
8
7
6
G2
D2/S1
D2/S1
1
2
3
4
G1
G1
S1/D2
D1
G2
Q2
Q1
S2
PIN1
7
S1/D2
D1
D2/S1
D2/S1
S2
D1
D1
G1
S1/D2
6
5
D1
D1
D2/S1 D2/S1 5
D1
D1
PIN
Orderable Part Number
Package Type
Form
Tape & Reel
Minimum Order Quantity
AOE6930
DFN 5x6E
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Max Q1
30
Max Q2
Units
Drain-Source Voltage
Gate-Source Voltage
30
±12
85
85
340
60
48
80
32
36
75
30
5
V
V
VGS
±20
22
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
ID
TC=100°C
A
22
IDM
88
22 G
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy
VDS Spike
IDSM
A
19
IAS
50
A
mJ
V
C
L=0.01mH
10µs
EAS
13
VSPIKE
36
TC=25°C
TC=100°C
TA=25°C
TA=70°C
24
PD
W
Power Dissipation B
Power Dissipation A
9.6
4.1
2.6
PDSM
W
3.2
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol Typ Q1 Typ Q2 Max Q1 Max Q2
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
23
45
4
20
40
30
60
25
50
t ≤ 10s
RθJA
RθJC
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case (Note) Steady-State
Note: Bottom S2, D1.
Steady-State
1.25
5.2
1.65
Rev.2.0 : June 2015
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Page 1 of 10
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
VDS=30V, VGS=0V
30
V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, ID=20A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
±100
2.1
4.3
6.2
7.0
nA
V
VGS(th)
1.3
1.7
3.5
5.0
5.2
85
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.7
1
V
Maximum Body-Diode Continuous Current G
22
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1075
480
55
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
f=1MHz
0.2
1.0
2.0
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
Qgs
Qgd
tD(on)
tr
Total Gate Charge
15
7
25
15
nC
nC
nC
nC
nC
nC
ns
Total Gate Charge
VGS=10V, VDS=15V, ID=20A
Gate Source Charge
Gate Drain Charge
2.5
2.5
2.5
2.5
4.5
4
Gate Source Charge
Gate Drain Charge
VGS=4.5V, VDS=15V, ID=20A
Turn-On DelayTime
Turn-On Rise Time
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
ns
tD(off)
tf
Turn-Off DelayTime
19
ns
Turn-Off Fall Time
3
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
12.5
21.5
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0 : June 2015
www.aosmd.com
Page 2 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60
40
20
0
80
60
40
20
0
VDS=5V
3.5V
4.5V
10V
3V
125°C
25°C
VGS=2.5V
0
1
2
3
4
5
0
1
2
3
4
5
VGS (Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Figure 1: On-Region Characteristics (Note E)
7
1.6
1.4
1.2
1
6
5
4
3
2
1
0
VGS=4.5V
VGS=10V
ID=20A
VGS=10V
VGS=4.5V
ID=20A
0.8
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction
Temperature (Note E)
12
10
8
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
125°C
125°C
6
25°C
4
25°C
2
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
VGS (Volts)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.2.0 : June 2015
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Page 3 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1500
1000
500
0
VDS=15V
ID=20A
Ciss
8
6
Coss
4
2
Crss
0
0
5
10
15
20
0
5
10
15
20
25
30
Qg (nC)
VDS (Volts)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
1000.0
100.0
10.0
1.0
400
300
200
100
0
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
0.0001 0.001 0.01
0.1
1
10
100
0.1
1
10
100
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
θJC=5.2°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
1
0.1
PDM
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
Pulse Width (s)
0.1
1
10
100
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.0 : June 2015
www.aosmd.com
Page 4 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
30
25
20
15
10
5
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TCASE (°C)
TCASE (°C)
Figure 12: Power De-rating (Note F)
Figure 13: Current De-rating (Note F)
10000
1000
100
10
TA=25°C
1
1E-05
0.001
0.1
Pulse Width (s)
10
1000
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
θJA=60°C/W
R
0.1
PDM
0.01
0.001
Single Pulse
0.01
Ton
T
0.0001
0.001
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.2.0 : June 2015
www.aosmd.com
Page 5 of 10
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
VDS=30V, VGS=0V
30
V
1
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
5
VDS=0V, VGS=±12V
VDS=VGS, ID=250µA
VGS=10V, ID=30A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
±100
1.9
nA
V
VGS(th)
1.2
1.5
0.65
0.95
0.8
0.83
1.2
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=30A
VDS=5V, ID=20A
IS=1A,VGS=0V
1.05
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
278
0.65
1
V
Maximum Body-Diode Continuous Current G
85
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
5560
1670
200
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
f=1MHz
0.2
1.0
2.0
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
Qgs
Qgd
tD(on)
tr
Total Gate Charge
95
42
150
65
nC
nC
nC
nC
nC
nC
ns
Total Gate Charge
V
GS=10V, VDS=15V, ID=20A
Gate Source Charge
Gate Drain Charge
11.5
12
Gate Source Charge
Gate Drain Charge
11.5
12
VGS=4.5V, VDS=15V, ID=20A
Turn-On DelayTime
12.5
27
Turn-On Rise Time
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
ns
tD(off)
tf
Turn-Off DelayTime
66.5
13
ns
Turn-Off Fall Time
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
23
ns
Qrr
nC
72.5
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0 : June 2015
www.aosmd.com
Page 6 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60
40
20
0
80
60
40
20
0
2.5V
VDS=5V
2.2V
4.5V
10V
125°C
2.1V
25°C
VGS=2V
0
1
2
3
4
5
0
1
2
3
4
5
VGS (Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Figure 1: On-Region Characteristics (Note E)
2.0
1.5
1.0
0.5
0.0
1.8
1.6
1.4
1.2
1
VGS=10V
ID=20A
VGS=4.5V
VGS=10V
VGS=4.5V
ID=20A
0.8
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction
Temperature (Note E)
2
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
1.5
1
125°C
125°C
25°C
0.5
0
25°C
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
VGS (Volts)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.2.0 : June 2015
www.aosmd.com
Page 7 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8000
7000
6000
5000
4000
3000
2000
1000
0
VDS=15V
ID=20A
Ciss
8
6
4
Coss
2
Crss
0
0
20
40
60
80
100
0
5
10
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
500
400
300
200
100
0
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
0.0001 0.001 0.01
0.1
1
10
100
0.1
1
10
100
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
θJC=1.65°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
PDM
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
Pulse Width (s)
0.1
1
10
100
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.0 : June 2015
www.aosmd.com
Page 8 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TCASE (°C)
TCASE (°C)
Figure 12: Power De-rating (Note F)
Figure 13: Current De-rating (Note F)
10000
1000
100
10
TA=25°C
1
1E-05
0.001
0.1
Pulse Width (s)
10
1000
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θJA=50°C/W
0.1
PDM
0.01
0.001
Single Pulse
Ton
T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.2.0 : June 2015
www.aosmd.com
Page 9 of 10
Figure A: Gate Charge Test Circuit & Waveforms
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Figure B: Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Figure C: Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI2
AR
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Figure D: Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
IF
Isd
Vgs
dI/dt
IRM
+
Vdd
VDC
Vdd
-
Vds
Rev.2.0 : June 2015
www.aosmd.com
Page 10 of 10
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