AOF800L [AOS]
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor; 非对称双N沟道增强型场效应晶体管
| 型号： | AOF800L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总7页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4F800
Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
Features
Q1
Q2
The AO4F800 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters. Standard Product AOF800 is Pb-free
(meets ROHS & Sony 259 specifications). AOF800L
is a Green Product ordering option. AOF800 and
AOF800L are electrically identical.
VDS (V) = 30V
VDS(V) = 30V
ID = 8.3A (VGS = 10V) ID=17.7A
RDS(ON) < 18mΩ
RDS(ON) < 27mΩ
< 6.5mΩ
< 8.5mΩ
(VGS = 10V)
(VGS = 4.5V)
D1
D2
14
13
12
11
10
9
1
2
3
4
5
6
7
D1
D1
G1
G2
S2
S2
S1
S1
D2/S1
D2/S1
D2/S1
D2/S1
SOIC-14
Q1
Q2
G1
G2
S1
8
S2
D2/S1
S2
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Symbol
Max Q1
Max Q2
Units
VDS
Drain-Source Voltage
30
±20
30
±20
V
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
Pulsed Drain CurrentB
TA=25°C
TA=70°C
8.3
17.7
13
ID
6.7
A
IDM
30
80
TA=25°C
TA=70°C
2
3
PD
W
Power Dissipation
1.28
-55 to 150
2.1
TJ, TSTG
Symbol
RθJA
Junction and Storage Temperature Range
-55 to 150
°C
Parameter: Thermal Characteristics MOSFET Q1
Typ
47
Max
62.5
110
40
Units
Maximum Junction-to-AmbientA
t ≤ 10s
Maximum Junction-to-AmbientA
83
Steady-State
°C/W
Maximum Junction-to-LeadC
Steady-State
RθJL
23
Parameter: Thermal Characteristics MOSFET Q2
Symbol
RθJA
Typ
Max
Units
Maximum Junction-to-AmbientA
31
40
t ≤ 10s
Maximum Junction-to-AmbientA
Steady-State
59
16
75
24
°C/W
Maximum Junction-to-LeadC
Steady-State
RθJL
Alpha & Omega Semiconductor, Ltd.
AO4F800
Q1 Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
V
DS=24V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
V
V
DS=0V, VGS= ±20V
DS=VGS ID=250µA
GS=4.5V, VDS=5V
100
3
nA
V
VGS(th)
ID(ON)
1
1.8
30
A
VGS=10V, ID=8.3A
15
21
18
25
27
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
V
V
GS=4.5V, ID=6.7A
DS=5V, ID=8.3A
22
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
18
23
S
V
A
IS=1A
0.76
1
3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1040 1250 pF
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
190
pF
pF
Ω
120
V
GS=0V, VDS=0V, f=1MHz
0.7 0.85
SWITCHING PARAMETERS
Qg(10V)
Qg
Total Gate Charge
19.8
9.8
2.5
3.5
24
12
nC
nC
nC
nC
ns
Total Gate Charge
VGS=10V, VDS=15V, ID=8.3A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
5.2 6.25
Turn-On Rise Time
V
GS=10V, VDS=15V, RL=1.8Ω,
5
20.5
3.6
15
6
ns
RGEN=3Ω
tD(off)
tf
Turn-Off DelayTime
25
4.3
18
10
ns
Turn-Off Fall Time
ns
trr
IF=8.3A, dI/dt=100A/µs
IF=8.3A, dI/dt=100A/µs
Body Diode Reverse Recovery time
Body Diode Reverse Recovery charge
ns
Qrr
nC
8
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIG
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4F800
Q1 Electrical Characteristics (T =25°C unless otherwise noted)
J
30
25
20
15
10
5
30
25
20
15
10
5
4V
10V
VDS=5V
3.5V
4.5V
125°C
VGS=3V
25°C
0
0
1
1.5
2
2.5
GS (Volts)
3
3.5
4
0
1
2
3
4
5
V
V
DS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
26
22
18
14
10
1.7
1.6
1.5
1.4
VGS=4.5V
ID=8.3A
VGS=10V
1.3
VGS=4.5V
VGS=10V
1.2
1.1
1
0.9
0
5
10
15
20
25
30
0
25
50
Temperature (°C)
Figure 4: On resistance vs. Junction Temperature
75
100
125
150
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
60
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=8.3A
50
40
30
20
10
125°C
25°C
125°C
25°C
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
V
V
GS (Volts)
Figure 5: On resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4F800
Q1 Electrical Characteristics (T =25°C unless otherwise noted)
J
1500
10
f=1MHz
VGS=0V
VDS=15V
ID=8.3A
1250
1000
750
500
250
0
Ciss
8
6
4
2
0
Coss
Crss
0
4
8
12
16
20
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
TJ(Max)=150°C, TA=25°C
TJ(Max)=150°C
TA=25°C
10µs
30
100µs
1ms
10ms
0.1s
20
RDS(ON)
limited
1s
10s
DC
10
0.1
0
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO4F800
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS= ±20V
100
2.5
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1
1.8
VGS=4.5V, VDS=5V
80
A
V
GS=10V, ID=17.7A
5.4
7.56
6.8
82
6.5
9.1
8.5
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=13A
VDS=5V, ID=17.7A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
0.7
1
Maximum Body-Diode Continuous Current
4.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
6060 7270
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
638
355
VGS=0V, VDS=0V, f=1MHz
0.45
0.54
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
103
48
124
57
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
V
GS=10V, VDS=15V, ID=17.7A
18
15
12
14
10
62
11
8
ns
VGS=10V, VDS=15V, RL=0.85Ω,
R
GEN=3Ω
tD(off)
tf
51.5
8.8
33.5
22
ns
ns
trr
IF=17.7A, dI/dt=100A/µs
IF=17.7A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
40
26
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4F800
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
60
50
40
30
20
10
0
60
50
40
30
20
10
0
10V
4.5V
VDS=5V
3.5V
125°C
3.0V
25°C
VGS=2.5V
2
0
1
3
4
5
1
1.5
2
2.5
GS(Volts)
3
3.5
V
DS (Volts)
V
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
7.5
7.0
6.5
6.0
5.5
5.0
4.5
1.6
1.4
1.2
1
ID=17.7A
VGS=4.5V
VGS=4.5V
VGS=10V
VGS=10V
0.8
0
10
20
30
40
50
0
25
50
75
100
125
150
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
16
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
12
8
ID=17.7A
125°C
125°C
25°C
25°C
4
0
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
V
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4F800
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
8000
6000
4000
2000
0
10
8
VDS=15V
ID=17.7A
Ciss
6
4
2
Crss
Coss
0
0
20
40
60
Qg (nC)
Figure 7: Gate-Charge Characteristics
80
100
120
0
5
10
15
DS (Volts)
20
25
30
V
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
100
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
10µs
100µs
80
60
40
20
0
1ms
10ms
0.1s
1s
10s
DC
TJ(Max)=150°C
TA=25°C
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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