AOL1718 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOL1718 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总7页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1718
N-Channel Enhancement Mode Field Effect Transistor
TM
SRFET
General Description
Features
SRFETTM AOL1718 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
ideally suited for use as a low side switch in CPU core
power conversion.
VDS (V) = 30V
ID = 90A
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
R
DS(ON) < 3mΩ
RDS(ON) < 4.3mΩ
- RoHS Compliant
- Halogen Free
100% UIS Tested!
100% R g Tested!
UltraSO-8TM Top View
D
SRFETTM
Soft Recovery MOSFET:
D
Bottom tab
connected to
Integrated Schottky Diode
drain
S
G
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
30
±20
90
V
V
VGS
Continuous Drain
Current G
Pulsed Drain Current C
TC=25°C
ID
TC=100°C
71
A
A
IDM
410
21
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Repetitive avalanche energy L=0.1mHC
IDSM
16
IAR
40
A
EAR
80
mJ
TC=25°C
Power Dissipation B
TC=100°C
100
50
PD
W
TA=25°C
2.1
PDSM
W
Power Dissipation A
TA=70°C
1.3
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
19.6
48
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
25
60
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Steady-State
Steady-State
RθJC
1
1.5
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1718
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250υA, VGS=0V
30
V
VDS=30V, VGS=0V
0.025
0.1
20
IDSS
Zero Gate Voltage Drain Current
mA
µA
TJ=125°C
TJ=125°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
0.1
2.2
VGS(th)
ID(ON)
V
DS=VGS ID=250µA
VGS=10V, VDS=5V
GS=10V, ID=20A
1.2
1.8
V
A
410
V
2.4
3.8
3.4
87
3
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
4.6
4.3
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
0.4
1
Maximum Body-Diode Continuous Current
90
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2975 3719 4463
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
485
204
0.28
693
340
0.56
900
476
0.84
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
48
20
12
6
60
25
72
30
18
14
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
V
GS=10V, VDS=15V, ID=20A
15
10
9.2
10.7
40
ns
VGS=10V, VDS=15V, RL=0.75Ω,
R
GEN=3Ω
tD(off)
tf
ns
12.5
13
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
10
21
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
16
32
ns
Qrr
26.5
nC
2
A. The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The Power
A
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial T
J
=25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
2
H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25°C.
A
Rev 0: Oct-08
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1718
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
160
140
120
100
80
120
100
80
60
40
20
0
VDS=5V
10V
5V
4.5V
4V
3.5V
60
125°C
40
25°C
VGS=3V
20
0
0
1
2
3
4
5
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
6
5
4
3
2
1
0
2
1.8
1.6
1.4
1.2
1
VGS=10V
ID=20A
VGS=4.5V
VGS=4.5V
VGS=10V
ID=20A
0.8
0
25
50
75
100 125 150 175 200
0
5
10
15
20
25
30
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
8
6
4
2
0
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
ID=20A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1718
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
6000
5000
4000
3000
2000
1000
0
VDS=15V
ID=20A
8
Ciss
6
4
Coss
2
Crss
0
0
10
20
30
Qg (nC)
40
50
60
0
5
10
15
VDS (Volts)
20
25
30
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
800
600
400
200
0
1000.0
100.0
10.0
1.0
TJ(Max)=175°C
TC=25°C
10µs
100µs
RDS(ON)
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
V
DS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
T
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1718
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
180
160
140
120
100
80
120
100
80
60
40
20
0
TA=25°C
TA=100°C
TA=125°C
60
TA=150°C
40
20
0
0
25
50
75
100
125
150
175
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
100
120
100
80
60
40
20
0
TA=25°C
80
60
40
20
0
0.01
0.1
1
10
100
1000
0
25
50
75
100
125
150
175
T
CASE (°C)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note F)
100
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
10
1
RθJA=60°C/W
0.1
PD
Single Pulse
0.01
0.001
Ton
T
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1
10
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1718
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
0.7
0.6
0.5
0.4
0.3
0.2
0.1
20A
10A
VDS=30V
VDS=15V
5A
IS=1A
0
50
100
Temperature (°C)
150
200
0
50
100
Temperature (°C)
150
200
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
Figure 18: Diode Forward voltage vs. Junction
Temperature
38
36
34
32
30
28
26
12
10
8
16
3
di/dt=800A/µs
di/dt=800A/µs
14
12
10
8
125ºC
2.5
2
trr
25ºC
125ºC
25ºC
1.5
1
6
Qrr
Irm
125ºC
6
125ºC
4
25ºC
4
S
25ºC
0.5
0
2
2
0
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
IS (A)
IS (A)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
35
30
25
20
15
10
5
10
24
21
18
15
12
9
2.5
125ºC
Is=20A
Is=20A
8
6
4
2
0
2
25ºC
125ºC
1.5
1
25ºC
125º
125ºC
25ºC
trr
Qrr
S
6
0.5
25ºC
Irm
200
3
0
0
0
0
400
600
800
1000
0
200
400
600
800
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 21: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Figure 22: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1718
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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