AOL1722 [AOS]

N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管


型号：	AOL1722
厂家：	ALPHA & OMEGA SEMICONDUCTORS
描述：	N-Channel Enhancement Mode Field Effect Transistor N沟道增强型网络场效晶体管晶体晶体管
文件：	总5页 (文件大小：249K)
中文：	中文翻译
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AOL1722

N-Channel Enhancement Mode Field Effect Transistor

SRFET

General Description

Features

SRFET^TMAOL1722/L uses advanced trench

technology with a monolithically integrated Schottky

diode to provide excellent R_DS(ON),and low gate charge.

This device is suitable for use as a low side FET in

SMPS, load switching and general purpose

applications. AOL1722 and AOL1722L are electrically

identical.

V_DS(V) = 30V

I_D=65A

(V _GS= 10V)

R_DS(ON)< 4.5mΩ (V_GS= 10V)

R_DS(ON)< 5.8mΩ (V_GS= 4.5V)

-RoHS Compliant

-AOL1722L is Halogen Free

UltraSO-8^TMTop View

Fits SOIC8

footprint !

SRFET^TM

Soft Recovery MOSFET:

Integrated Schottky Diode

Bottom tab

connected to

drain

Absolute Maximum Ratings T_C=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

±12

T_C=25°C

Continuous Drain

Current ^{B, H}

Pulsed Drain Current ^C

T_C=100°C

I_D

I_DM

Continuous Drain

Current ^A

T_A=25°C

T_A=70°C

I_DSM

I_AR

Avalanche Current ^C

Repetitive avalanche energy L=0.3mH ^C

E_AR

217

100

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.1

P_DSM

Power Dissipation ^A

T_A=70°C

1.3

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

19.6

Max

Units

°C/W

t ≤ 10s

Maximum Junction-to-Ambient

Maximum Junction-to-Case ^D

R_θJA

Steady-State

R_θJC

1.5

Alpha & Omega Semiconductor, Ltd.

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AOL1722

Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

STATIC PARAMETERS

BV_DSS

Drain-Source Breakdown Voltage

I_D=250µA, V_GS=0V

_DS=30V, V_GS=0V

0.1

I_DSS

Zero Gate Voltage Drain Current

T_J=125°C

I_GSS

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

V_DS=0V, V_GS= ±12V

_DS=V_GSI_D=250µA

V_GS=10V, V_DS=5V

_GS=10V, I_D=20A

±100

2.5

V_GS(th)

I_D(ON)

1.4

1.8

3.8

5.5

4.4

4.5

6.6

5.8

R_DS(ON)

Static Drain-Source On-Resistance

mΩ

V_GS=4.5V, I_D=20A

V_DS=5V, I_D=20A

I_S=1A,V_GS=0V

g_FS

V_SD

I_S

Forward Transconductance

Diode Forward Voltage

0.36

0.5

Maximum Body-Diode + Schottky Diode Continuous Current ^H

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

3956 5620

630

Ω

_GS=0V, V_DS=15V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

270

V_GS=0V, V_DS=0V, f=1MHz

0.72

1.2

SWITCHING PARAMETERS

Q_g(10V)

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Q_g(4.5V)

Q_gs

Q_gd

t_D(on)

t_r

_GS=10V, V_DS=15V, I_D=20A

10.4

12.4

9.8

8.4

V_GS=10V, V_DS=15V, R_L=0.75Ω,

R_GEN=3Ω

t_D(off)

t_f

t_rr

I_F=20A, dI/dt=300A/µs

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_rr

A: The value of R

is measured with the device in a still air environment with T =25°C. The power dissipation P

and current rating I_DSMare

θJA

DSM

based on T_J(MAX)=150°C, using steady statejunction-to-ambient thermal resistance.

B. The power dissipation P is based on T_J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature T_J(MAX)=175°C.

D. The R_θJAis the sum of the thermal impedence from junction to case R_θJCand case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assumin

a maximum junction temperature of T_J(MAX)=175°C. The SOA curve provides a single pulse rating.

G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

H. The maximum current rating is limited by bond-wires.

Rev0: March. 2008

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AOL1722

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100

V_DS=5V

10V

4.5V

3.5V

V_GS=3.0V

125°C

25°C

0.5

1.5

2.5

1.5

2.5

V_GS(Volts)

Figure 2: Transfer Characteristics

3.5

V_DS(Volts)

Figure 1: On-Region Characteristics

1.9

1.7

1.5

1.3

1.1

0.9

0.7

I_D=20A

V_GS=10V

V_GS=4.5V

4.5

V_GS=4.5V

V_GS=10V

3.5

-40 -15 10 35 60

85 110 135 160 185

I_D(A)

Temperature (°C)

Figure 4: On-Resistance vs. Junction

Temperature

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

100

I_D=20A

125°C

25°C

0.1

25°C

0.01

0.001

0.0

0.2

0.4

_SD(Volts)

Figure 6: Body-Diode Characteristics

0.6

0.8

1.0

_GS(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AOL1722

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

6000

5000

4000

3000

2000

1000

V_DS=15V

I_D=20A

C_iss

C_oss

C_rss

Q_g(nC)

V_DS(Volts)

Figure 7: Gate-Charge Characteristics

Figure 8: Capacitance Characteristics

100.0

10.0

1.0

10000

1000

100

T_J(Max)=175°C

T_C=25°C

100µ

1ms

R_DS(ON)

10ms

limited

100ms

T_J(Max)=175°C

T_C=25°C

0.1

100

0.0001

0.001

0.01

0.1

Pulse Width (s)

V_DS(Volts)

Figure 10: Single Pulse Power Rating Junction-to-

Case (Note F)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

D=T_on/T

T_J,PK=T_C+P_DM.Z_θJc.R_θJc

R_θJC=1.5°C/W

P_D

0.1

Single Pulse

T_on

0.01

0.00001

0.0001

0.001

0.01

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

0.1

100

Alpha & Omega Semiconductor, Ltd.

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AOL1722

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100

120

100

T_C=25°C

100

125

150

175

1.0E-06

1.0E-05

Time in avalanche, t_A(s)

Figure 12: Single Pulse Avalanche capability

1.0E-04

1.0E-03

_CASE(°C)

Figure 13: Power De-rating (Note B)

100

T_J(Max₎=150°C

T_A=25°C

_CASE(°C)

Figure 14: Current De-rating (Note B)

100

125

150

175

0.001

0.01

0.1

100

1000

Pulse Width (s)

Figure15: Single Pulse Power Rating Junction-to-

Ambient (Note G)

D=T_on/T

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

T_J,PK=T_C+P_DM.Z_θJc.R_θJc

R_θJA=60°C/W

0.1

0.01

P_D

D=T_on/T

Single Pulse

T_on

T_J,PK=T_A+P_DM.Z_θJA.R_θJA

R_θJA=60°C/W

0.001

0.00001

0.0001

0.001

0.01

0.1

100

1000

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

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