AON4805L [AOS]
Dual P-Channel Enhancement Mode Field Effect Transistor; 双P沟道增强型场效应晶体管
| 型号： | AON4805L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Dual P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON4805L
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AON4805L uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltage as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
VDS (V) = -20V
ID = -4.5A
(VGS = -4.5V)
R
R
R
DS(ON) < 65mΩ (VGS = -4.5V)
DS(ON) < 85mΩ (VGS = -2.5V)
DS(ON) < 115mΩ (VGS = -1.8V)
-RoHS Compliant
-Halogen Free
DFN 3x2
Top View
Bottom View
D2
S2
D1
Pin 1
1
2
3
4
8
7
6
5
S1
G1
S2
G2
D1
D1
D2
D2
G2
G1
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
MOSFET
Units
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
-20
±8
V
V
VGS
TA=25°C
TA=70°C
-4.5
Continuous Drain
Current
Pulsed Drain Current C
ID
-3.5
A
IDM
-25
TA=25°C
TA=70°C
2
PD
W
Power Dissipation B
1.3
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
50
Max
60
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient AD
Maximum Junction-to-Lead
84
100
34
Steady-State
Steady-State
RθJL
28
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4805L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-20
V
VDS=-20V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±8V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-4.5A
±100
-1
nA
V
VGS(th)
ID(ON)
-0.5
-25
-0.67
A
53
72
65
90
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
S
VGS=-2.5V, ID=-3A
66
85
VGS=-1.8V, ID=-2A
88
115
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-4.5A
IS=-1A,VGS=0V
15
-0.7
-1
V
Maximum Body-Diode Continuous Current
-1.7
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
560
80
670
pF
pF
pF
Ω
VGS=0V, VDS=-10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
70
VGS=0V, VDS=0V, f=1MHz
15
23
10
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
8.5
1.2
2.1
7.2
36
nC
nC
nC
ns
ns
ns
ns
VGS=-4.5V, VDS=-10V, ID=-4.5A
VGS=-4.5V, VDS=-10V, RL=2.2Ω,
R
GEN=6Ω
tD(off)
tf
53
56
trr
IF=-4.5A, dI/dt=100A/µs
IF=-4.5A, dI/dt=100A/µs
37
45
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
27
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C: Ratings are based on low frequency and duty cycles to keep initialT J=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
2
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev0 : July 2008
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4805L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
20
15
10
5
VDS=-5V
-3.0V
-4.5V
-2.5V
-2.0V
VGS=-1.5V
125°C
25°C
0
0
0
1
2
3
4
5
0
0.5
1
1.5
-VGS(Volts)
2
2.5
3
-VDS (Volts)
Figure 1: On-Region Characteristics(Note E)
Figure 2: Transfer Characteristics(Note E)
1.6
1.4
1.2
1
VGS=-4.5V
ID=-4.5A
140
120
100
80
VGS=-1.8V
VGS=-2.5V
ID=-3A
VGS=-1.8V
ID=-2A
VGS=-2.5V
VGS=-4.5V
60
40
0.8
0
2
4
6
8
10
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage(Note E)
Figure 4: On-Resistance vs. Junction
Temperature(Note E)
180
160
140
120
100
80
1E+02
1E+01
ID=-4.5A
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
125°C
25°C
125°C
60
25°C
40
0
2
4
6
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source
Voltage(Note E)
-VSD (Volts)
Figure 6: Body-Diode Characteristics(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4805L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
1400
1200
1000
800
600
400
200
0
VDS=-10V
ID=-4.5A
Ciss
Coss
Crss
0
2
4
6
8
10
0
5
10
-VDS (Volts)
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.00
10.00
1.00
1000
100
10
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
100µ
1ms
10ms
0.1s
1s
1
0.10
DC
TJ(Max)=150°C
TA=25°C
0.1
0.01
0.00001
0.001
0.1
10
1000
0.1
1
10
100
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=110°C/W
1
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4805L
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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