AON6242 [AOS]

60V N-Channel MOSFET; 60V N沟道MOSFET


型号：	AON6242
厂家：	ALPHA & OMEGA SEMICONDUCTORS
描述：	60V N-Channel MOSFET 60V N沟道MOSFET
文件：	总6页 (文件大小：292K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AON6242

60V N-Channel MOSFET

General Description

Product Summary

V_DS

60V

The AON6242 uses trench MOSFET technology that is

uniquely optimized to provide the most efficient high

frequency switching performance.Power losses are

minimized due to an extremely low combination of

R_DS(ON)and Crss.In addition,switching behavior is well

controlled with a soft recovery body diode.This device is

ideal for boost converters and synchronous rectifiers for

consumer, telecom, industrial power supplies and LED

backlighting.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

85A

< 3.6mΩ

< 4.5mΩ

100% UIS Tested

100% R_gTested

DFN5X6

Top View

Bottom View

Top View

PIN1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_C=25°C

Continuous Drain

Current ^G

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

240

18.5

14.5

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

I_DSM

I_AR

E_AR

281

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.3

P_DSM

°C

Power Dissipation ^A

1.4

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

1.5

Rev 0: July 2011

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Page 1 of 6

AON6242

Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max Units

STATIC PARAMETERS

I_D=250µA, V_GS=0V

BV_DSS

Drain-Source Breakdown Voltage

V_DS=60V, V_GS=0V

I_DSS

Zero Gate Voltage Drain Current

µA

T_J=55°C

V_DS=0V, V_GS=±20V

V_DS=V_GS,I_D=250µA

V_GS=10V, V_DS=5V

V_GS=10V, I_D=20A

I_GSS

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

100

2.5

V_GS(th)

I_D(ON)

1.5

240

3.6

5.8

4.5

mΩ

R_DS(ON)

Static Drain-Source On-Resistance

T_J=125°C

4.8

3.6

140

0.7

V_GS=4.5V, I_D=16A

mΩ

V_DS=5V, I_D=20A

g_FS

V_SD

I_S

Forward Transconductance

Diode Forward Voltage

I_S=1A,V_GS=0V

Maximum Body-Diode Continuous Current ^G

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

4240 5305 6370

Ω

_GS=0V, V_DS=30V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

375

6.5

540

705

V_GS=0V, V_DS=0V, f=1MHz

0.45

0.9

1.35

SWITCHING PARAMETERS

Q_g(10V) Total Gate Charge

Q_g(4.5V) Total Gate Charge

V_GS=10V, V_DS=30V, I_D=20A

Q_gs

Q_gd

t_D(on)

t_r

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

V_GS=10V, V_DS=30V, R_L=1.5Ω,

R_GEN=3Ω

t_D(off)

t_f

6.5

t_rr

I_F=20A, dI/dt=500A/µs

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

24.5

125

Q_rr

163

A. The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The

Power dissipation P_DSMis based on R _θJAand the maximum allowed junction temperature of 150°C. The value in any given application depends

on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.

B. The power dissipation P_Dis based on T_J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initial T_J=25°C.

D. The R_θJAis the sum of the thermal impedance from junction to case R_θJCand case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T_J(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 0: July 2011

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Page 2 of 6

AON6242

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100

V_DS=5V

3.5V

4.5V

10V

125°C

V_GS=3V

25°C

1.5

2.5

3.5

V_GS(Volts)

V_DS(Volts)

Figure 2: Transfer Characteristics (Note E)

Fig 1: On-Region Characteristics (Note E)

4.5

4.0

3.5

3.0

2.5

2.0

1.8

1.6

1.4

1.2

V_GS=10V

I_D=20A

V_GS=4.5V

V_GS=10V

V_GS=4.5V

I_D=16A

0.8

100

125

150

175

Temperature (°C)

I_D(A)

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage (Note E)

^{Figure 4: On-Resistance vs. Junctio}1ⁿ8

Temperature (Note E)

1.0E+02

1.0E+01

I_D=20A

1.0E+00

125°C

1.0E-01

1.0E-02

1.0E-03

1.0E-04

1.0E-05

125°C

25°C

0.0

0.2

0.4

V_SD(Volts)

Figure 6: Body-Diode Characteristics

0.6

0.8

1.0

V_GS(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

Rev 0: July 2011

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AON6242

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

6000

V_DS=30V

I_D=20A

C_iss

5000

4000

3000

2000

1000

C_oss

C_rss

20 30

Q_g(nC)

V_DS(Volts)

Figure 8: Capacitance Characteristics

Figure 7: Gate-Charge Characteristics

1000.0

100.0

10.0

1.0

400

350

300

250

200

150

100

T_J(Max)=150°C

T_C=25°C

10µs

10us

R_DS(ON)

100us

1ms

T_J(Max)=150°C

T_C=25°C

0.1

0.0

0.01

0.1

100

1000

0.0001

0.001

0.01

0.1

V_DS(Volts)

Pulse Width (s)

_{Figure 10: Single Pulse Power Ratin}1_g8_Junction-to-

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

Case (Note F)

D=T_on/T

T_J,PK=T_C+P_DM.Z_θJC.R_θJC

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

R_θJC=1.5°C/W

P_D

0.1

T_on

Single Pulse

0.0001

0.01

0.00001

0.001

0.01

Pulse Width (s)

0.1

100

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 0: July 2011

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Page 4 of 6

AON6242

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

160

120

100

T_A=25°C

T_A=100°C

T_A=150°C

T_A=125°C

T_CASE(°C)

Figure 13: Power De-rating (Note F)

100

125

150

100

1000

Time in avalanche, t_A(us)

Figure 12: Single Pulse Avalanche capability (Note

10000

1000

100

T_A=25°C

100

125

150

0.0001

0.01

100

10000

Pulse Width (s)

T_CASE(°C)

Figure 15: Single Pulse Power Rating Junction-to-

Ambient (Note G)

Figure 14: Current De-rating (Note F)

D=T_on/T

T_J,PK=T_A+P_DM.Z_θJA.R_θJA

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

R_θJA=55°C/W

0.1

P_D

0.01

T_on

Single Pulse

0.001

0.0001

0.001

0.01

0.1

100

1000

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)

Rev 0: July 2011

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Page 5 of 6

AON6242

Gate Charge Test Circuit & Waveform

Vgs

10V

VDC

Qgs

Qgd

Vds

VDC

DUT

Vgs

Charge

Resistive Switching Test Circuit & Waveforms

Vds

90%

10%

DUT

Vdd

Vgs

VDC

Vgs

t_d(on)

t_d(off)

t_on

t_off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

E_AR= 1/2 LI_A²_R

BV_DSS

Vds

Vgs

Vds

Vgs

Vdd

I _AR

VDC

DUT

Vgs

Diode Recovery Test Circuit & Waveforms

Q _rr= - Idt

Vds +

Vds -

DUT

Vgs

t_rr

Isd

I _F

Isd

Vgs

dI/dt

I _RM

Vdd

VDC

Vdd

Vds

Rev 0: July 2011

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Page 6 of 6

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