AON6248 [AOS]

60V N-Channel MOSFET; 60V N沟道MOSFET


型号：	AON6248
厂家：	ALPHA & OMEGA SEMICONDUCTORS
描述：	60V N-Channel MOSFET 60V N沟道MOSFET
文件：	总6页 (文件大小：270K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AON6248

60V N-Channel MOSFET

General Description

Product Summary

V_DS

60V

The AON6248 uses trench MOSFET technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an

extremely low combination of R_DS(ON), Ciss and Coss.

This device is ideal for boost converters and synchronous

rectifiers for consumer, telecom, industrial power supplies

and LED backlighting.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=4.5V)

53A

< 11.5mΩ

< 14.7mΩ

100% UIS Tested

100% R_gTested

DFN5X6

Top View

Bottom View

PIN1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

110

17.5

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

I_AS

E_AS

T_C=25°C

Power Dissipation ^B

T_C=100°C

69.5

27.5

7.4

P_D

T_A=25°C

P_DSM

°C

Power Dissipation ^A

4.7

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

1.3

1.8

Rev 0 : Oct. 2012

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Page 1 of 6

AON6248

Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol Parameter

Conditions

Min

Typ

Max Units

STATIC PARAMETERS

I_D=250µA, V_GS=0V

BV_DSS

Drain-Source Breakdown Voltage

V_DS=60V, V_GS=0V

I_DSS

Zero Gate Voltage Drain Current

µA

T_J=55°C

V_DS=0V, V_GS=±20V

V_DS=V_GS,I_D=250µA

V_GS=10V, V_DS=5V

V_GS=10V, I_D=20A

I_GSS

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

±100

2.5

V_GS(th)

I_D(ON)

1.5

110

9.2

11.5

21.5

14.7

mΩ

R_DS(ON)

Static Drain-Source On-Resistance

T_J=125°C

V_GS=4.5V, I_D=20A

11.3

mΩ

V_DS=5V, I_D=20A

g_FS

V_SD

I_S

Forward Transconductance

Diode Forward Voltage

I_S=1A,V_GS=0V

0.71

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

1543

165

Ω

V_GS=0V, V_DS=30V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

V_GS=0V, V_DS=0V, f=1MHz

0.8

1.7

2.6

SWITCHING PARAMETERS

Q_g(10V) Total Gate Charge

8.5

Q_g(4.5V) Total Gate Charge

V_GS=10V, V_DS=30V, I_D=20A

Q_gs

Q_gd

t_D(on)

t_r

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

1.8

V_GS=10V, V_DS=30V, R_L=1.5Ω,

R_GEN=3Ω

2.5

t_D(off)

t_f

t_rr

I_F=20A, dI/dt=500A/µs

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_rr

A. The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The

Power dissipation P_DSMis based on R _θJAt ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application

depends on the user's specific board design.

B. The power dissipation P_Dis based on T_J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initial T_J=25°C.

D. The R_θJAis the sum of the thermal impedance from junction to case R_θJCand case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T_J(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 0 :Oct. 2012

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Page 2 of 6

AON6248

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100

V_DS=5V

10V

4.5V

3.5V

125°C

V_GS=3V

25°C

V_GS(Volts)

V_DS(Volts)

Fig 1: On-Region Characteristics (Note E)

Figure 2: Transfer Characteristics (Note E)

2.2

1.8

1.6

1.4

1.2

V_GS=4.5V

V_GS=10V

I_D=20A

V_GS=10V

^=4.51^V0

V_GS

I_D=20A

0.8

100

125

150

175

I_D(A)

Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage (Note E)

Figure 4: On-Resistance vs. Junction Temperature

(Note E)

1.0E+02

I_D=20A

1.0E+01

_1.0E4₊₀0₀

125°C

25°C

125°C

1.0E-01

1.0E-02

1.0E-03

1.0E-04

1.0E-05

25°C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V_GS(Volts)

V_SD(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

Figure 6: Body-Diode Characteristics (Note E)

Rev 0 :Oct. 2012

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AON6248

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1800

V_DS=30V

I_D=20A

1600

1400

1200

1000

800

600

400

200

C_iss

C_oss

C_rss

V_DS(Volts)

Figure 8: Capacitance Characteristics

Q_g(nC)

Figure 7: Gate-Charge Characteristics

200

160

120

1000.0

100.0

10.0

1.0

T_J(Max)=150°C

T_C=25°C

10µs

R_DS(ON)

100µs

1ms

10ms

T_J(Max)=150°C

T_C=25°C

0.1

0.0

0.01

0.1

100

1000

0.0001 0.001

0.01

0.1

100

V_DS(Volts)

Pulse Width (s)

Figure 9: Maximum Forward Biased

Safe Operating Area (Note F)

Figure 10: Single Pulse Power Rating Junction-to-Case

(Note F)

D=T_on/T

T_J,PK=T_C+P_DM.Z_θJC.R_θJC

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

R_θJC=1.8°C/W

P_D

0.1

T_on

Single Pulse

0.0001

0.01

1E-05

0.001

0.01

Pulse Width (s)

0.1

100

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 0 :Oct. 2012

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Page 4 of 6

AON6248

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1000

T_A=100°C

T_A=25°C

100

T_A=150°C

T_A=125°C

100

1000

100

125

150

Time in avalanche, t_A(µs)

Figure 12: Single Pulse Avalanche capability

(Note C)

T_CASE(°C)

Figure 13: Power De-rating (Note F)

10000

1000

100

T_A=25°C

100

125

150

1E-05

0.001

0.1

1000

¹⁰0

T_CASE(°C)

Pulse Width (s)

Figure 14: Current De-rating (Note F)

Figure 15: Single Pulse Power Rating Junction-to-

Ambient (Note H)

D=T_on/T

T_J,PK=T_A+P_DM.Z_θJA.R_θJA

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

R_θJA=55°C/W

0.1

P_D

0.01

T_on

Single Pulse

0.001

0.0001

0.001

0.01

0.1

Pulse Width (s)

100

1000

Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Rev 0 :Oct. 2012

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Page 5 of 6

AON6248

Gate Charge Test Circuit & Waveform

Vgs

10V

VDC

Qgs

Qgd

Vds

VDC

DUT

Vgs

Charge

Resistive Switching Test Circuit & Waveforms

Vds

90%

10%

DUT

Vdd

Vgs

VDC

Vgs

t_d(on)

t_d(off)

t_on

t_off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

E_AR= 1/2 LI_A²_R

BV_DSS

Vds

Vgs

Vds

Vgs

Vdd

I _AR

VDC

DUT

Vgs

Diode Recovery Test Circuit & Waveforms

Q_rr= - Idt

Vds +

Vds -

DUT

Vgs

t_rr

Isd

I _F

Isd

Vgs

dI/dt

I _RM

Vdd

VDC

Vdd

Vds

Rev 0 :Oct. 2012

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Page 6 of 6

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