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AON6280 [AOS]

80V N-Channel MOSFET; 80V N沟道MOSFET
AON6280
型号： AON6280
厂家： ALPHA & OMEGA SEMICONDUCTORS    ALPHA & OMEGA SEMICONDUCTORS
描述：

80V N-Channel MOSFET
80V N沟道MOSFET
文件： 总6页 (文件大小：300K)
中文：  中文翻译
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AON6280  
80V N-Channel MOSFET  
General Description  
Product Summary  
VDS  
80V  
The AON6280 uses trench MOSFET technology that is  
uniquely optimized to provide the most efficient high  
frequency switching performance. Both conduction and  
switching power losses are minimized due to an  
extremely low combination of RDS(ON), Ciss and Coss.  
This device is ideal for boost converters and synchronous  
rectifiers for consumer, telecom, industrial power supplies  
and LED backlighting.  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS=6V)  
85A  
< 4.1mΩ  
< 5.0mΩ  
100% UIS Tested  
100% Rg Tested  
D
DFN5X6  
Top View  
Top View  
Bottom View  
1
8
7
6
5
2
3
4
G
S
PIN1  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
80  
±20  
85  
V
V
VGS  
TC=25°C  
Continuous Drain  
Current G  
ID  
TC=100°C  
65  
A
Pulsed Drain Current C  
IDM  
230  
17  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
Avalanche Current C  
Avalanche energy L=0.1mH C  
IDSM  
A
13  
IAS  
50  
A
EAS  
125  
83  
mJ  
TC=25°C  
PD  
W
Power Dissipation B  
TC=100°C  
33  
TA=25°C  
7.3  
PDSM  
W
°C  
Power Dissipation A  
4.7  
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
14  
40  
1
Max  
17  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
t
≤ 10s  
RθJA  
Steady-State  
Steady-State  
55  
RθJC  
1.5  
Rev 1 : Mar. 2012  
www.aosmd.com  
Page 1 of 6  
AON6280  
Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Units  
STATIC PARAMETERS  
ID=250µA, VGS=0V  
BVDSS  
Drain-Source Breakdown Voltage  
80  
V
VDS=80V, VGS=0V  
1
IDSS  
Zero Gate Voltage Drain Current  
µA  
5
TJ=55°C  
VDS=0V, VGS=±20V  
VDS=VGS ID=250µA  
VGS=10V, VDS=5V  
VGS=10V, ID=20A  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
±100  
3.2  
nA  
V
VGS(th)  
ID(ON)  
2
2.6  
230  
A
3.4  
5.8  
4
4.1  
7
mΩ  
RDS(ON)  
Static Drain-Source On-Resistance  
TJ=125°C  
VGS=6V, ID=20A  
5
mΩ  
S
VDS=5V, ID=20A  
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
76  
0.7  
IS=1A,VGS=0V  
Maximum Body-Diode Continuous CurrentG  
1
V
85  
A
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
3930  
592  
66  
pF  
pF  
pF  
Ω
VGS=0V, VDS=40V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
VGS=0V, VDS=0V, f=1MHz  
VGS=10V, VDS=40V, ID=20A  
0.3  
0.7  
1.1  
82  
SWITCHING PARAMETERS  
Qg  
Qgs  
Qgd  
tD(on)  
tr  
Total Gate Charge  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTime  
Turn-Off Fall Time  
58  
15  
14  
13  
6
nC  
nC  
nC  
ns  
ns  
ns  
ns  
VGS=10V, VDS=40V, RL=2Ω,  
RGEN=3Ω  
tD(off)  
tf  
32  
9
trr  
IF=20A, dI/dt=500A/µs  
IF=20A, dI/dt=500A/µs  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
36  
ns  
Qrr  
nC  
153  
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The  
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends  
on the user's specific board design.  
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper  
dissipation limit for cases where additional heatsinking is used.  
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep  
initial TJ =25°C.  
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.  
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.  
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming  
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.  
G. The maximum current rating is package limited.  
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.  
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.  
Rev 1 : Mar. 2012  
www.aosmd.com  
Page 2 of 6  
AON6280  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
100  
80  
60  
40  
20  
0
100  
80  
60  
40  
20  
0
5V  
6V  
VDS=5V  
4.5V  
10V  
4V  
125°C  
25°C  
VGS=3.5V  
4
0
1
2
3
4
5
6
0
1
2
3
5
VGS(Volts)  
VDS (Volts)  
Fig 1: On-Region Characteristics (Note E)  
Figure 2: Transfer Characteristics (Note E)  
10  
8
2
1.8  
1.6  
1.4  
1.2  
1
VGS=10V  
ID=20A  
6
VGS=6V  
4
VGS  
ID=20A  
=6V
VGS=10V  
2
0
0.8  
0
5
10  
15  
ID (A)  
20  
25  
30  
0
25  
50  
75  
100  
125  
150  
175  
Temperature (°C)  
Figure 3: On-Resistance vs. Drain Current and Gate  
Voltage (Note E)  
Figure 4: On-Resistance vs. Junction Temperature  
(Note E)  
12  
10  
8
1.0E+02  
1.0E+01  
ID=20A  
1.0E+00  
125°C  
125°C  
1.0E-01  
1.0E-02  
1.0E-03  
1.0E-04  
1.0E-05  
6
25°C  
4
2
25°C  
0
0.0  
0.2  
0.4  
VSD (Volts)  
Figure 6: Body-Diode Characteristics (Note E)  
0.6  
0.8  
1.0  
1.2  
2
4
6
8
10  
VGS (Volts)  
Figure 5: On-Resistance vs. Gate-Source Voltage  
(Note E)  
Rev 1 : Mar. 2012  
www.aosmd.com  
Page 3 of 6  
AON6280  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
10  
5000  
VDS=40V  
ID=20A  
Ciss  
8
4000  
3000  
2000  
1000  
0
6
4
Coss  
2
Crss  
0
0
10  
20  
30  
Qg (nC)  
40  
50  
60  
0
10  
20  
30  
VDS (Volts)  
Figure 8: Capacitance Characteristics  
40  
50  
60  
70  
80  
Figure 7: Gate-Charge Characteristics  
500  
400  
300  
200  
100  
0
1000.0  
100.0  
10.0  
1.0  
TJ(Max)=150°C  
TC=25°C  
RDS(ON)  
10µs  
100µs  
1ms  
DC  
10ms  
TJ(Max)=150°C  
TC=25°C  
0.1  
0.0  
0.01  
0.1  
1
10  
100  
1000  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS (Volts)  
Pulse Width (s)  
Figure 9: Maximum Forward Biased Safe  
Operating Area (Note F)  
Figure 10: Single Pulse Power Rating Junction-to-Case  
(Note F)  
10  
1
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
D=Ton/T  
TJ,PK=TC+PDM.ZθJC.RθJC  
RθJC=1.5°C/W  
PD  
0.1  
Ton  
T
Single Pulse  
0.0001  
0.01  
0.00001  
0.001  
0.01  
0.1  
1
10  
100  
Pulse Width (s)  
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)  
Rev 1 : Mar. 2012  
www.aosmd.com  
Page 4 of 6  
AON6280  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
1000  
100  
80  
60  
TA=25°C  
TA=100°C  
100  
40  
20  
0
TA=150°C  
TA=125°C  
10  
1
10  
100  
1000  
0
25  
50  
75  
100  
125  
150  
Time in avalanche, tA (µs)  
Figure 12: Single Pulse Avalanche capability  
(Note C)  
TCASE (°C)  
Figure 13: Power De-rating (Note F)  
100  
10000  
1000  
100  
10  
TA=25°C  
80  
60  
40  
20  
0
1
0
25  
50  
75  
100  
125  
150  
0.00001  
0.001  
0.1  
10  
1000  
TCASE (°C)  
Pulse Width (s)  
Figure 14: Current De-rating (Note F)  
Figure 15: Single Pulse Power Rating Junction-to-  
Ambient (Note H)  
10  
1
D=Ton/T  
TJ,PK=TA+PDM.ZθJA.RθJA  
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
RθJA=55°C/W  
0.1  
PD  
0.01  
Ton  
T
Single Pulse  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
10000  
Pulse Width (s)  
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)  
Rev 1 : Mar. 2012  
www.aosmd.com  
Page 5 of 6  
AON6280  
Gate Charge Test Circuit & Waveform  
Vgs  
Qg  
10V  
+
VDC  
+
Qgs  
Qgd  
Vds  
VDC  
-
-
DUT  
Vgs  
Ig  
Charge  
Resistive Switching Test Circuit & Waveforms  
RL  
Vds  
Vds  
90%  
10%  
+
DUT  
Vdd  
Vgs  
VDC  
Rg  
-
Vgs  
Vgs  
td(on)  
t
r
td(off)  
t
f
ton  
toff  
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms  
L
EAR= 1/2 LIA2R  
BVDSS  
Vds  
Id  
Vgs  
Vds  
+
Vgs  
Vdd  
I AR  
VDC  
Id  
Rg  
-
DUT  
Vgs  
Vgs  
Diode Recovery Test Circuit & Waveforms  
Qrr = - Idt  
Vds +  
Vds -  
Ig  
DUT  
Vgs  
trr  
L
Isd  
I F  
Isd  
Vgs  
dI/dt  
I RM  
+
Vdd  
VDC  
Vdd  
-
Vds  
Rev 1 : Mar. 2012  
www.aosmd.com  
Page 6 of 6  

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