AON6405L [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AON6405L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON6405L
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AON6405L combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON).This device is ideal for load
switch and battery protection applications.
VDS (V) = -30V
ID = -30A
(VGS = -10V)
R
R
DS(ON) < 7mΩ (VGS = -10V)
DS(ON) < 8mΩ (VGS = -4.5V)
ESD Protected!
100% UIS Tested!
-RoHS Compliant
-Halogen Free
D
Top View
D
S
S
S
G
Fits SOIC8
footprint !
Rg
D
G
D
D
S
DFN5X6
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
-30
Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current G
V
V
VGS
±20
TC=25°C
-30
A
TC=100°C
ID
-23
Pulsed Drain CurrentC
IDM
-160
-15
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
A
IDSM
IAR
-12
-54
A
EAR
146
mJ
TC=25°C
Power Dissipation B
TC=100°C
83
PD
W
33
TA=25°C
2.5
PDSM
W
Power Dissipation A
TA=70°C
1.6
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
14.2
42
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
17
50
1.5
t ≤ 10s
RθJA
Maximum Junction-to-Ambient AD
Maximum Junction-to-Case
Steady-State
Steady-State
RθJC
1.2
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6405L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
V
DS=-30V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
µA
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±16V
DS=VGS ID=-250µA
±10
VGS(th)
ID(ON)
V
-0.8
-1.2
-1.6
V
A
VGS=-10V, VDS=-5V
VGS=-10V, ID=-20A
-160
5.5
7
7
8.5
8
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-20A
6.1
70
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
DS=-5V, ID=-20A
S
V
A
IS=-1A,VGS=0V
-0.65
-1
Maximum Body-Diode Continuous Current
-50
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
4580 5500
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
755
564
VGS=0V, VDS=0V, f=1MHz
160
210
105
SWITCHING PARAMETERS
Qg(-10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
87
41
nC
nC
nC
nC
ns
Qg(-4.5V)
V
GS=-10V, VDS=-15V, ID=-20A
Qgs
Qgd
tD(on)
tr
12.8
17
180
260
1.2
9.7
32
VGS=-10V, VDS=-15V, RL=0.75Ω,
GEN=3Ω
ns
µs
R
tD(off)
tf
µs
trr
IF=-20A, dI/dt=300A/µs
IF=-20A, dI/dt=300A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
40
ns
Qrr
77
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev 0: July 2008
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6405L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
160
140
120
100
80
100
80
60
40
20
0
-10V
-4V
VDS=-5V
-3.5V
-3V
-5V
60
125°C
40
VGS=-2.5V
25°C
3
20
0
0
1
2
3
4
5
0
1
2
4
-VDS (Volts)
-VGS(Volts)
Figure 1: On-Region Characteristics(Note E)
Figure 2: Transfer Characteristics(Note E)
8
7
6
5
4
3
1.8
ID=-20A
VGS=-4.5V
1.6
1.4
1.2
1
VGS=-10V
VGS=-4.5V
VGS=-10V
0.8
0
25
50
75
100
125
150
175
0
5
10
-ID (A)
15
20
25
30
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage(Note E)
20
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=-20A
16
12
8
125°C
125°C
25°C
25°C
4
0
2
4
6
8
10
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics(Note E)
0.6
0.8
1.0
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source
Voltage(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6405L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
7000
6000
5000
4000
3000
2000
1000
0
10
VDS=-15V
ID=-20A
8
Ciss
6
4
Coss
2
Crss
0
0
20
40
60
80
100
0
5
10
15
20
25
30
Qg (nC)
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
200
160
120
80
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
100µs
10s
10ms
1ms
DC
0.1
40
TJ(Max)=150°C
TC=25°C
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TC+PDM.ZθJC.RθJC
T
RθJC=1.5°C/W
0.1
PD
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6405L
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
trr
Vds -
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Ig
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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