AON6536 [AOS]
30V N-Channel MOSFET; 30V N沟道MOSFET型号: | AON6536 |
厂家: | ALPHA & OMEGA SEMICONDUCTORS |
描述: | 30V N-Channel MOSFET |
文件: | 总6页 (文件大小:484K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AON6536
30V N-Channel MOSFET
General Description
Product Summary
The AON6536 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
30V
ID (at VGS=10V)
55A
RDS(ON) (at VGS=10V)
< 7mΩ
< 10mΩ
RDS(ON) (at VGS=4.5V)
100% UIS Tested
100% Rg Tested
DFN5X6
D
Top View
Top View
Bottom View
1
8
2
3
7
6
4
5
G
PIN1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
30
V
V
Gate-Source Voltage
VGS
±20
55
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
ID
TC=100°C
A
35
IDM
135
22
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche Energy L=0.05mH C
IDSM
A
17.5
35
IAS
A
EAS
31
mJ
TC=25°C
Power Dissipation B
TC=100°C
35.5
14
PD
W
TA=25°C
5.5
PDSM
W
°C
Power Dissipation A
3.6
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Symbol
Typ
18
Max
22
Units
°C/W
°C/W
°C/W
t
≤ 10s
RθJA
Steady-State
Steady-State
40
55
RθJC
2.8
3.5
Rev0 : Aug 2012
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Page 1 of 6
AON6536
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
2.5
nA
V
VGS(th)
ID(ON)
1.5
2.0
135
A
V
GS=10V, ID=20A
5.6
8.6
7.8
58
7
11
10
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.72
1
V
Maximum Body-Diode Continuous Current
40
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1210
210
100
1.2
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
0.6
1.8
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
19.5
9
30
15
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
4.5
3.5
6
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
3
ns
tD(off)
tf
21.5
3
ns
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
9
ns
Qrr
nC
13
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Aug 2012
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Page 2 of 6
AON6536
CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
60
50
40
30
20
10
0
4.5V
VDS=5V
3.5V
6V
10V
125°C
3V
25°C
VGS=2.5V
4
0
1
2
3
5
0.5
1.5
2.5
VGS(Volts)
3.5
4.5
5.5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
12
10
8
1.8
1.6
1.4
1.2
1
VGS=10V
ID=20A
VGS=4.5V
6
VGS=4.5V
VGS=10V
4
ID=20A
2
0.8
0
5
10
15
20
25
30
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. JunctionTemperature
(Note E)
15
1.0E+02
ID=20A
1.0E+01
12
9
1.0E+00
125°C
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
6
25°C
3
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
2
4
6
8
10
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev0: Aug 2012
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Page 3 of 6
AON6536
CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1800
1500
1200
900
600
300
0
VDS=15V
ID=20A
8
Ciss
6
4
Coss
2
Crss
0
0
5
10
15
20
0
5
10
15
20
25
30
VDS (Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
100us
1ms
10ms
DC
0.1
40
TJ(Max)=150°C
TC=25°C
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=3.5°C/W
1
0.1
PD
Single Pulse
0.001
Ton
T
0.01
0.00001
0.0001
0.01
Pulse Width (s)
0.1
1
10
100
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0: Aug 2012
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Page 4 of 6
AON6536
CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
10
40
35
30
25
20
15
10
5
TA=25°C
TA=100°C
TA=150°C
TA=125°C
0
1
0
25
50
75
100
125
150
1
10
100
1000
Time in avalanche, tA (µs)
TCASE (°C)
Figure 12: Single Pulse Avalanche capability
(Note C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
60
50
40
30
20
10
0
TA=25°C
1
0
25
50
75
100
125
150
0.00001
0.001
0.1
10
1000
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=55°C/W
0.1
PD
0.01
0.001
Single Pulse
0.001
Ton
T
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev0: Aug 2012
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Page 5 of 6
AON6536
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev0: Aug 2012
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Page 6 of 6
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