AON6590 [AOS]

Power Field-Effect Transistor,;


型号：	AON6590
厂家：	ALPHA & OMEGA SEMICONDUCTORS
描述：	Power Field-Effect Transistor, 开关脉冲光电二极管晶体管
文件：	总6页 (文件大小：221K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AON6590

40V N-Channel MOSFET

General Description

Product Summary

V_DS

• Trench Power MV MOSFET technology

• Low R_DS(ON)

40V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=4.5V)

100A

• Low Gate Charge

• Optimized for fast-switching applications

• RoHS and Halogen-Free Compliant

< 0.99mΩ

< 1.5mΩ

Applications

100% UIS Tested

100% Rg Tested

• Synchronous Rectification in DC/DC and AC/DC Converters

• Isolated DC/DC Converters in Telecom and Industrial

DFN5x6

Top View

Bottom View

PIN1

Orderable Part Number

Package Type

Form

Tape & Reel

Minimum Order Quantity

AON6590

DFN 5x6

3000

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

100

400

T_C=25°C

Continuous Drain

Current ^G

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_DSM

Avalanche Current ^C

Avalanche energy

V_DSSpike

I_AS

L=0.3mH

10µs

E_AS

634

V_SPIKE

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

208

P_D

Power Dissipation ^B

Power Dissipation ^A

7.3

P_DSM

4.7

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

0.45

0.6

Rev.3.0: December 2014

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Page 1 of 6

Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol Parameter

Conditions

Min

Typ

Max

Units

STATIC PARAMETERS

I_D=250µA, V_GS=0V

BV_DSS

Drain-Source Breakdown Voltage

V_DS=40V, V_GS=0V

I_DSS

Zero Gate Voltage Drain Current

µA

T_J=55°C

V_DS=0V, V_GS=±20V

V_DS=V_GS,I_D=250µA

V_GS=10V, I_D=20A

I_GSS

Gate-Body leakage current

Gate Threshold Voltage

±100

2.3

V_GS(th)

1.3

1.8

0.78

1.17

1.15

100

0.66

0.99

1.55

1.5

mΩ

R_DS(ON)

Static Drain-Source On-Resistance

T_J=125°C

V_GS=4.5V, I_D=20A

V_DS=5V, I_D=20A

I_S=1A,V_GS=0V

mΩ

g_FS

V_SD

I_S

Forward Transconductance

Diode Forward Voltage

Maximum Body-Diode Continuous Current ^G

100

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

8320

1438

Ω

_GS=0V, V_DS=20V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

f=1MHz

0.5

1.15

1.8

SWITCHING PARAMETERS

Q_g(10V)

Q_g(4.5V)

Q_gs

Q_gd

t_D(on)

t_r

Total Gate Charge

100

Total Gate Charge

_GS=10V, V_DS=20V, I_D=20A

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

V_GS=10V, V_DS=20V, R_L=1.0Ω,

R_GEN=3Ω

t_D(off)

t_f

Turn-Off DelayTime

Turn-Off Fall Time

t_rr

I_F=20A, dI/dt=400A/µs

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_rr

A. The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The Power

dissipation P_DSMis based on R _θJAt≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on

the user's specific board design.

B. The power dissipation P_Dis based on T_J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Single pulse width limited by junction temperature T_J(MAX)=150°C.

D. The R_θJAis the sum of the thermal impedance from junction to case R_θJCand case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of T_J(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.3.0: December 2014

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Page 2 of 6

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

120

100

120

100

3.5V

4.5V

10V

V_DS=5V

125°C

25°C

V_GS=3V

1.5

2.5

3.5

4.5

V_GS(Volts)

V_DS(Volts)

Figure 2: Transfer Characteristics (Note E)

Figure 1: On-Region Characteristics (Note E)

1.8

1.6

1.4

1.2

V_GS=10V

I_D=20A

1.5

V_GS=4.5V

I_D=20A

0.5

V_GS=10V

0.8

100

125

150

175

I_D(A)

Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage (Note E)

Figure 4: On-Resistance vs. Junction Temperature

(Note E)

1.0E+02

1.0E+01

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

1.0E-05

I_D=20A

125°C

25°C

0.0

0.2

0.4

0.6

0.8

1.0

V_GS(Volts)

V_SD(Volts)

Figure 6: Body-Diode Characteristics (Note E)

Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

Rev.3.0: December 2014

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10000

V_DS=20V

I_D=20A

C_iss

8000

6000

4000

2000

C_oss

C_rss

100

120

Q_g(nC)

V_DS(Volts)

Figure 8: Capacitance Characteristics

Figure 7: Gate-Charge Characteristics

1000.0

100.0

10.0

1.0

1000

800

600

400

200

T_J(Max)=150°C

T_C=25°C

10µs

R_DS(ON)

limited

10µs

100µs

1ms

10ms

T_J(Max)=150°C

T_C=25°C

0.1

0.0

0.01

0.0001 0.001 0.01

0.1

100 1000

0.1

100

1000

V_DS(Volts)

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Case (Note F)

V_GS> or equal to 4.5V

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

D=T_on/T

T_J,PK=T_C+P_DM.Z_θJC.R_θJC

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

R_θJC=0.6°C/W

P_D

0.1

0.01

Single Pulse

0.001

T_on

1E-05

0.0001

0.01

Pulse Width (s)

0.1

100

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev.3.0: December 2014

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Page 4 of 6

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

250

200

150

100

150

100

125

150

100

125

150

T_CASE(°C)

Figure 12: Power De-rating (Note F)

Figure 13: Current De-rating (Note F)

10000

1000

100

T_A=25°C

1E-05

0.001

0.1

Pulse Width (s)

1000

Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

D=T_on/T

T_J,PK=T_A+P_DM.Z_θJA.R_θJA

_θJA=50°C/W

0.1

P_D

0.01

0.001

Single Pulse

0.1

T_on

0.0001

0.001

0.01

100

1000

Pulse Width (s)

Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)

Rev.3.0: December 2014

www.aosmd.com

Page 5 of 6

Gate Charge Test Circuit & Waveform

Vgs

10V

VDC

Qgs

Qgd

Vds

VDC

DUT

Vgs

Charge

Resistive Switching Test Circuit & Waveforms

Vds

90%

10%

DUT

Vdd

Vgs

VDC

Vgs

t_d(on)

t_d(off)

t_on

t_off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

E_AR= 1/2 LI_A²_R

BV_DSS

Vds

Vgs

Vds

Vgs

Vdd

I _AR

VDC

DUT

Vgs

Diode Recovery Test Circuit & Waveforms

Q_rr= - Idt

Vds +

Vds -

DUT

Vgs

t_rr

Isd

I_F

Isd

Vgs

dI/dt

I_RM

Vdd

VDC

Vdd

Vds

Rev.3.0: December 2014

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Page 6 of 6

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